Page 1
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
SMPS IGBT
PD - 95558
IRGP20B60PDPbF
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
• Lead-Free
Features
• NPT Technology, Positive Temperature Coefficient
C
G
E
ID (FET equivalent) = 20A
n-channel
V
= 600V
CES
V
@ V
typ. = 2.05V
CE(on)
= 15V IC = 13.0A
GE
Equivalent MOSFET
Parameters
R
typ. = 158mΩ
CE(on)
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
V
CES
@ TC = 25°C
I
C
I
@ TC = 100°C Continuous Collector Current 22
C
I
CM
I
LM
@ TC = 25°C
I
F
I
@ TC = 100°C Diode Continous Forward Current 12
F
I
FRM
V
GE
@ TC = 25°C
P
D
P
@ TC = 100°C Maximum Power Dissipation 86
D
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Continuous Collector Current 40
Pulse Collector Current (Ref. Fig. C.T.4) 80
Clamped Inductive Load Current
Diode Continous Forward Current 31
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage ±20 V
Maximum Power Dissipation 220 W
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
d
e
80 A
42
Thermal Resistance
Parameter Min. Typ. Max. Units
R
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.58 °C/W
θJC
R
θ
R
θCS
R
θ
(Diode)
JC
JA
Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 2.5
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
Weight ––– 6 (0.21) ––– g (oz)
E
C
G
7/27/04
Page 2
IRGP20B60PDPbF
gy
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
R
G
V
CE(on)
V
GE(th)
∆V
GE(th)
gfe Forward Transconductance — 19 — S
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge (turn-on) — 68 102
Q
gc
Q
ge
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
eff.
C
oes
C
eff. (ER)
oes
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
t
rr
Q
rr
I
rr
Notes:
R
CE(on)
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
V
= 80% (V
CC
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
C
oes
C
oes
Collector-to-Emitter Breakdown Voltage 600——V
/∆T
Temperature Coeff. of Breakdown Voltage
J
Internal Gate Resistance — 4.3 — Ω 1MHz, Open Collector
Collector-to-Emitter Saturation Voltage — 2.50 2.80 V
Gate Threshold Voltage 3.0 4.0 5.0 V
/∆TJ
Threshold Voltage temp. coefficient — -11 — mV/°C
Collector-to-Emitter Leakage Current — 1.0 250 µA
Diode Forward Voltage Drop — 1.4 1.7 V
Gate-to-Emitter Leakage Current — — ±100 nA
Parameter Min. Typ. Max. Units
Gate-to-Collector Charge (turn-on) — 24 36 nC
Gate-to-Emitter Charge (turn-on) — 10 15
Turn-On Switching Loss — 95 140
Turn-Off Switching Loss — 100 145 µJ
Total Switching Loss — 195 285
Turn-On delay time — 20 26
Rise time — 5.0 7.0 ns
Turn-Off delay time — 115 135
Fall time — 6.0 8.0
Turn-On Switching Loss — 165 215
Turn-Off Switching Loss — 150 195 µJ
Total Switching Loss — 315 410
Turn-On delay time — 19 25
Rise time — 6.0 8.0 ns
Turn-Off delay time — 125 140
Fall time — 13 17
Input Capacitance — 1570 —
Output Capacitance — 130 —
Reverse Transfer Capacitance — 20 — pF f = 1Mhz
Related)
CE(on)
g
g
typ. = 2.05V and IC = 13A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
Effective Output Capacitance (Time Related)
Effective Output Capacitance (Ener
Diode Reverse Recovery Time — 42 60 ns
Diode Reverse Recovery Charge — 80 180 nC
Peak Reverse Recovery Current — 3.5 6.0 A
typ. = equivalent on-resistance = V
), VGE = 15V, L = 28µH, RG = 22Ω.
CES
typ. / IC, where V
CE(on)
eff. is a fixed capacitance that gives the same charging time as C
eff.(ER) is a fixed capacitance that stores the same energy as C
—0.32—V/°C
—2.052.35
—2.653.00
—3.303.70
—0.1—mA
—1.31.6
—94—
—76—
—80120
— 220 600
—5.610
while VCE is rising from 0 to 80% V
oes
while VCE is rising from 0 to 80% V
oes
= 0V, IC = 500µA
V
GE
= 0V, IC = 1mA (25°C-125°C)
V
GE
= 13A, VGE = 15V
I
C
= 20A, VGE = 15V
I
C
= 13A, VGE = 15V, TJ = 125°C
I
C
= 20A, VGE = 15V, TJ = 125°C
I
C
I
= 250µA
C
= VGE, IC = 1.0mA
V
CE
= 50V, IC = 40A, PW = 80µs
V
CE
= 0V, VCE = 600V
V
GE
= 0V, VCE = 600V, TJ = 125°C
V
GE
I
= 12A, VGE = 0V
F
I
= 12A, VGE = 0V, TJ = 125°C
F
= ±20V, VCE = 0V
V
GE
Conditions
= 13A
I
C
V
= 400V
CC
= 15V
V
GE
I
= 13A, VCC = 390V
C
= +15V, RG = 10Ω, L = 200µH
V
GE
T
= 25°C
J
= 13A, VCC = 390V
I
C
V
GE
T
J
= 13A, VCC = 390V
I
C
V
GE
T
J
I
= 13A, VCC = 390V
C
V
GE
T
J
V
GE
V
CC
V
GE
T
J
V
CC
Rg = 22Ω, VGE = +15V to 0V
T
J
T
J
T
J
T
J
T
J
T
J
f
= +15V, RG = 10Ω, L = 200µH
f
= 25°C
= +15V, RG = 10Ω, L = 200µH
= 125°C
f
= +15V, RG = 10Ω, L = 200µH
= 125°C
f
= 0V
= 30V
= 0V, VCE = 0V to 480V
= 150°C, IC = 80A
= 480V, Vp =600V
= 25°C IF = 12A, VR = 200V,
= 125°C
di/dt = 200A/µs
= 25°C IF = 12A, VR = 200V,
= 125°C
di/dt = 200A/µs
= 25°C IF = 12A, VR = 200V,
= 125°C
di/dt = 200A/µs
.
CES
.
CES
Ref.Fig
4, 5,6,8,9
7,8,9
10
Ref.Fig
17
CT1
CT3
CT3
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
16
15
3
CT2
19
21
19,20,21,22
CT5
2 www.irf.com
Page 3
45
40
35
IRGP20B60PDPbF
250
200
30
)
25
A
(
C
I
20
15
10
5
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
100
10
)
A
C
I
1
150
)
W
(
t
o
t
P
100
50
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
40
VGE = 15V
35
VGE = 12V
VGE = 10V
30
VGE = 8.0V
VGE = 6.0V
25
)
A
(
20
E
C
I
15
10
0
10 100 1000
V
(V)
CE
Fig. 3 - Reverse Bias SOA
TJ = 150°C; V
40
35
30
25
)
A
(
20
E
C
I
15
10
5
0
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
0123456
V
CE
GE
(V)
=15V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
5
0
0123456
V
(V)
CE
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
40
35
30
25
)
A
(
20
E
C
I
15
10
5
0
0123456
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V
CE
(V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
www.irf.com 3
Page 4
IRGP20B60PDPbF
450
400
350
300
)
250
A
(
E
C
200
I
150
100
50
0
0 5 10 15 20
TJ = 25°C
TJ = 125°C
V
(V)
GE
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
10
9
8
7
6
)
V
(
5
E
C
V
4
3
2
1
0
0 5 10 15 20
V
Fig. 9 - Typical V
GE
ICE = 20A
I
CE
I
CE
(V)
vs. V
CE
= 13A
= 8.0A
GE
TJ = 125°C
350
10
9
8
7
6
)
V
(
5
E
C
V
4
3
2
1
0
0 5 10 15 20
V
GE
Fig. 8 - Typical V
(V)
CE
ICE = 20A
I
= 13A
CE
I
= 8.0A
CE
vs. V
GE
TJ = 25°C
100
F
T = 150°C
J
T = 125°C
10
Ins tant aneous Forward Current - I ( A)
1
J
T = 25°C
J
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V (V)
FM
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
1000
300
E
250
)
J
µ
200
(
y
g
r
e
150
n
E
100
50
0
0 5 10 15 20 25
Fig. 11 - Typ. Energy Loss vs. I
TJ = 125°C; L = 200µH; V
Diode clamp used: 8ETH06 (See C.T.3)
ON
E
OFF
IC (A)
= 390V, RG = 10Ω; V
CE
)
s
100
n
(
e
m
i
T
g
n
i
h
c
i
10
w
S
t
R
1
0 5 10 15 20 25
C
GE
= 15V.
TJ = 125°C; L = 200µH; V
Fig. 12 - Typ. Switching Time vs. I
Diode clamp used: 8ETH06 (See C.T.3)
td
OFF
td
ON
t
F
IC (A)
= 390V, RG = 10Ω; V
CE
C
= 15V.
GE
4 www.irf.com
Page 5
IRGP20B60PDPbF
250
200
)
J
µ
(
y
150
g
r
e
n
E
100
50
0 5 10 15 20 25 30 35
Fig. 13 - Typ. Energy Loss vs. R
TJ = 125°C; L = 200µH; V
Diode clamp used: 8ETH06 (See C.T.3)
18
16
14
12
)
J
10
µ
(
s
e
8
o
E
6
4
= 390V, I
CE
E
ON
E
OFF
RG (Ω)
= 13A; V
CE
1000
td
OFF
)
s
100
n
(
e
m
i
T
g
n
i
h
c
i
10
w
S
G
= 15V
GE
TJ = 125°C; L = 200µH; V
t
F
t
R
1
0 10 20 30 40
RG (Ω)
Fig. 14 - Typ. Switching Time vs. R
= 390V, I
CE
td
ON
CE
G
= 13A; V
GE
= 15V
Diode clamp used: 8ETH06 (See C.T.3)
10000
Cies
Coes
Cres
)
F
p
(
e
c
n
a
t
i
c
a
p
a
C
1000
100
10
2
0
0 100 200 300 400 500 600 700
VCE (V)
Fig. 15- Typ. Output Capacitance
Stored Energy vs. V
16
14
12
10
)
V
(
8
E
G
V
6
4
2
0
0 1020304050607080
Q G, Total Gate Charge (nC)
CE
400V
Fig. 17 - Typical Gate Charge vs. V
I
= 13A
CE
GE
1
0 20 40 60 80 100
V
(V)
CE
Fig. 16- Typ. Capacitance vs. V
VGE= 0V; f = 1MHz
1.6
1.5
1.4
)
V
(
1.3
)
n
o
(
1.2
E
C
V
1.1
d
e
z
i
1
l
a
m
r
0.9
o
N
0.8
0.7
0.6
-50 0 50 100 150 200
TJ, Junction Temperature (°C)
Fig. 18 - Normalized Typical V
Junction Temperature
I
= 13A, VGE = 15V
CE
CE
CE(on)
vs.
www.irf.com 5
Page 6
IRGP20B60PDPbF
80
I = 16A
F
I = 8.0A
F
F
I = 4.0A
F
60
40
trr- (nC)
20
V = 200V
R
T = 125°C
J
T = 25°C
J
0
100 1000
di /dt - (A/µs)
f
Fig. 19 - Typical Reverse Recovery vs. dif/dt
20
V = 200V
R
T = 125°C
J
T = 25°C
J
16
I = 16A
F
I = 8.0A
F
I = 4.0A
12
F
Irr- ( A)
8
4
0
100 1000
di /dt - (A/µs)
f
Fig. 20 - Typical Recovery Current vs. dif/dt
Qrr- (nC)
500
400
300
200
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 16A
F
I = 8.0A
F
I = 4.0A
F
10000
1000
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 16A
F
I = 8.0A
F
I = 4.0A
F
di (rec) M/dt- (A /µs)
100
0
100 1000
di /dt - (A/µs)
f
100
100 1000
Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di
di /dt - (A/µs)
f
/dt vs. dif/dt,
(rec)M
6 www.irf.com
Page 7
IRGP20B60PDPbF
τ
τ
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
τ
1
Ci= τi/Ri
R
R
R
1
2
R
R
1
2
τ
2
τ
2
R
3
4
R
3
τ
3
τ
3
Ri (°C/W) τi (sec)
R
4
0.12003 0.000034
τ
C
τ
0.05001 0.000034
4
τ
4
0.23292 0.000970
0.17719 0.011265
Notes:
1. Duty Factor D = t1/t2
)
C
J
h
t
Z
(
e
s
n
o
p
s
e
R
l
a
0.01
m
r
e
h
T
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
)
C
J
h
t
Z
(
e
s
n
o
p
s
e
R
l
a
m
r
e
0.01
h
T
0.1
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
τ
1
Ci= τi/Ri
R
R
1
2
R
R
1
2
τ
2
τ
2
Ri (°C/W) τi (sec)
τ
C
0.8667 0.000121
1.6349 0.001726
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
www.irf.com 7
Page 8
IRGP20B60PDPbF
0
1K
DU T
L
L
VCC
80 V
DUT
480 V
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
PFC diode
L
DUT /
DRIVER
Rg
Fig.C.T.3 - Switching Loss Circuit
VCC
REVERSE RECOVERY CIRCUIT
Fig.C.T.2 - RBSOA Circuit
V
CC
R =
I
CM
DUT
Rg
Fig.C.T.4 - Resistive Load Circuit
VCC
V = 200V
R
Ω
0.01
L = 70µH
D.U.T.
dif/dt
ADJUST
G
D
IRFP250
S
Fig. C.T.5 - Reverse Recovery Parameter
Test Circuit
8 www.irf.com
Page 9
IRGP20B60PDPbF
450
400
350
tf
300
90% I
5% V
5% I
CE
CE
CE
250
(V)
200
CE
V
150
100
50
0
-50
Eoff Loss
-0.20 0.00 0.20 0.40 0.60 0.80
Time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 125°C using Fig. CT.3
18
16
14
12
10
8
6
4
2
0
-2
(A)
CE
I
450
400
350
TEST CURRENT
300
250
(V)
200
CE
V
150
tr
90% test cur rent
10% tes t current
100
50
0
5% V
Eon Loss
CE
-50
7.75 7.85 7.95 8.05 8.15
Time (µs)
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 125°C using Fig. CT.3
45
40
35
30
25
20
15
10
5
0
-5
(A)
CE
I
I
F
0
1
di /dt
1. dif/dt - Rate of change of current
through zero crossing
2. I
- Peak reverse recovery current
RRM
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 I
extrapolated to zero current
and 0.50 I
RRM
RRM
Fig. WF3 - Reverse Recovery Waveform and
3
t
rr
t
a
2
I
RRM
f
4. Qrr - Area under curve defined by t
and I
5. di
current during tb portion of t
t
b
0.5
di(rec)M/dt
0.75
I
RRM
RRM
t
Qrr =
2
/dt - Peak rate of change of
(rec)M
rr
4
Q
rr
I
RRM
5
rr
X I
RRM
rr
Definitions
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Page 10
IRGP20B60PDPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE:
THIS IS AN IRF PE30
WITH ASSEMBLY
LOT CODE 5657
ASS EMB LED ON WW 35, 20 00
IN THE AS SEMBL Y LINE "H"
Note: "P" in assembly line
positio n indicat es "Lead-Free"
TO-247AC package is not recommended for Surface Mount Application.
INTER NATIONAL
RECTIF IER
LOGO
ASSEMBLY
LOT CODE
56 57
This product has been designed and qualified for Industrial
PART NUMBE R
IRFPE30
035H
DAT E CODE
YEAR 0 = 2000
WE EK 35
LINE H
Data and specifications subject to change without notice.
market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
10 www.irf.com
Page 11
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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