Datasheet irgmc50f Datasheet

PD -90718B

IRGMC50F

INSULATED GATE BIPOLAR TRANSISTOR

Features

C

Fast Speed IGBT

• Electrically Isolated and Hermetically Sealed

• Simple Drive Requirements

• Latch-proof

• Fast Speed operation 3 kHz - 8 kHz

• Switching-loss rating includes all "tail" losses

G

E

V

= 600V

CES

V

CE(on) max

= 1.7V

@VGE = 15V, IC = 30A

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.

The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (f

, or the "half-current frequency "),

Ic/2

as well as an indication of the current handling capability of the device.

TO-254AA

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 35*
IC @ TC = 100°C Continuous Collector Current 30 A
I

CM

I

LM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 150 W

PD @ TC = 100°C Maximum Power Dissipation 60
T

J

T

STG

*Current is limited by pin diameter

Collector-to-Emitter Breakdown Voltage 600 V

Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to + 150
Storage Temperature Range °C
Lead Temperature 300 (0.063in./1.6mm from case for 10s)
Weight

➀➀

➀ 210

➀➀

➁➁

➁ 210

➁➁

9.3 (typical) g

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R

thCS

R

thJA

For footnotes refer to the last page

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Junction-to-Case — — 0.83
Case-to-Sink — 0.21 —
Junction-to-Ambient — — 48

°C/W

02/20/02

IRGMC50F

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

LC+L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 1.0 mA
Emitter-to-Collector Breakdown Voltage 15 ––– ––– V VGE = 0V, IC = 1.0 A

/∆T

Temperature Coeff. of Breakdown Voltage ––– 0.62 ––– V/°CVGE = 0V, IC = 1.0 mA

J

➂➂

➂

➂➂

––– ––– 1.7 IC = 30A VGE = 15V

Collector-to-Emitter Saturation Voltage ––– 2.0 ––– IC = 35A See Fig.5

––– 1.7 ––– IC = 30A , TJ = 125°C

V

Gate Threshold Voltage 3.0 ––– 5.5 VCE = VGE, IC = 250 µA

/∆TJTemperature Coeff. of Threshold Voltage ––– -14 ––– mV/°CVCE = VGE, IC = 250 µA

Forward Transconductance T 21 ––– ––– SVCE ≥ 15V, IC = 30A

Zero Gate Voltage Collector Current

––– ––– 50 VGE = 0V, VCE = 480V
––– ––– 2000 VGE = 0V, VCE = 480V, TJ = 125°C

µA

Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) ––– 120 140 IC = 30A
Gate - Emitter Charge (turn-on) ––– 15 35 nC VCC = 300V See Fig. 8
Gate - Collector Charge (turn-on) ––– 35 70 VGE = 15V
Turn-On Delay Time ––– ––– 48 IC = 30A, VCC = 480V
Rise Time ––– ––– 100 VGE = 15V, RG = 2.35Ω
Turn-Off Delay Time ––– ––– 540 Energy losses include "tail"

ns

Fall Time ––– ––– 360 See Fig. 9, 10 & 13
Turn-On Switching Loss ––– 0.2 –––
Turn-off Switching Loss ––– 5.8 –––

mJ

Total Switching Loss ––– 6.0 10
Turn-On Delay Time ––– 25 ––– TJ = 125°C
Rise Time ––– 49 ––– IC = 30A, VCC = 480V
Turn-Off Delay Time ––– 440 ––– VGE = 15V, RG = 2.35Ω

ns

Fall Time ––– 410 ––– Energy losses include "tail"
Total Switching Loss ––– 10 ––– See Fig. 11, 13

mJ

Total Inductance ––– 6.8 ––– nH Measured from Collector lead (6mm/

0.25in. from package) to Emitter

lead (6mm / 0.25in. from package)
Input Capacitance ––– 3000 ––– VGE = 0V
Output Capacitance ––– 340 ––– pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ––– 40 ––– ƒ = 1.0MHz

Note: Corresponding Spice and Saber models are available on the Website.

For footnotes refer to the last page

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Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

of fundamental; for triangular wave, I=IPK)

RMS

IRGMC50F

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

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IRGMC50F

Fig. 4 - Maximum Collector Current vs. Case

Temperature

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Collector-to-Emitter Voltage vs.

Junction Temperature

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IRGMC50F

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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IRGMC50F

125°C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

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IRGMC50F

y

p

)

p

ply, p

50V

Q

* Driver same t
* Note: Due to the 50V power su
will in crease to ob tain rate d Id.

e as D.U.T.; Vc = 80% of Vce(max

Fig. 12a - Clamped Inductive

Load Test Circuit

50V

1000V

Q

1000V

L

V *

C

ulse width and inductor

D.U.T.

L

Driver*

R

480V

RL =

X IC@25°C

0 - 480V

480µF
960V

4

R

Fig. 12b - Pulsed Collector

Current Test Circuit

I

C

V

C

S

D.U.T.

Fig. 13a - Switching Loss

Test Circuit

* Driver same type
as D.U.T., VC = 480V

Q

R

90%

S

V

C

90%

10%

5%

I

C

t

d(on)

10%

t

r

E

on

t

d(off)

E = (E +E )

ts on off

Fig. 13b - Switching Loss

Waveforms

t

f

E

off

t=5µ s

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IRGMC50F

Notes:

Q Repetitive rating; V

= 20V, pulse width limited by

GE

max. junction temperature.

R V

= 80%(V

CC

CES

), V

= 20V, L = 10µH, RG = 10Ω

GE

Case Outline and Dimensions — TO-254AA

3.78 [. 149]

3.53 [. 139]

17.40 [ .685]

16.89 [ .665]

3.81 [. 150]

13.84 [ .545]

13.59 [ .535]

A

20.32 [ .800]

20.07 [ .790]

123

C

2X

17.40 [ .685]

16.89 [ .665]

1.14 [.045]

3X

0.89 [.035]

0.36 [. 014]

6.60 [. 260]

6.32 [. 249]

13.84 [ .545]

13.59 [ .535]

B A

NOTE S:

1. DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994.

2. AL L DI ME NS IONS ARE S HOWN IN MILL IMET ER S [ INCHES ].

3. CONTROLLING DIMENSION: INCH.

4. CONFORMS TO JEDEC OUTLINE TO-254AA.

0.12 [. 005]

1.27 [. 050]

1.02 [. 040]

B

0.84 [. 033]
MAX.

3.81 [. 150]

22.73 [.895]

21.21 [.835]

3.78 [.149]

3.53 [.139]

S Pulse width ≤ 80µs; duty factor ≤ 0.1%.

T Pulse width 5.0µs, single shot.

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

A

17.40 [.685]

16.89 [.665]

4.82 [.190]

3.81 [.150]

3.81 [.150]

2X

123

13.84 [.545]

13.59 [.535]

20.32 [.800]

20.07 [.790]

1.14 [.045]

3X

0.89 [.035]

0.36 [.014] B A

LEGEND

1 = COLLECTOR
2 = EMITTER

3 = GATE

0.12 [.005]

1.27 [.050]

1.02 [.040]

B

R 1.52 [.060]

4.06 [.160]

3.56 [.140]

BERYLLIA WARNING PER MIL-PRF-19500

CAUTION

Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 02/02

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