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irgib7b60kd
Datasheet
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Datasheet irgib7b60kd Datasheet

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Page 1
PD - 94620
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGIB7B60KD
V
CES
= 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
G
E
n-channel
= 8.0A, TC=100°C
I
C
t
> 10µs, TJ=150°C
sc
V
CE(on)
typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB
FullPak
Absolute Maximum Ratings
Parameter Max. Units
V
CES
@ TC = 25°C Conti n uous Col lecto r Cu rr ent 12
I
C
@ TC = 100°C
I
C
I
CM
I
LM
@ TC = 25°C Diode Continuous Forward Curr ent 9.0
I
F
@ TC = 100°C
I
F
I
FM
V
ISOL
V
GE
@ TC = 25°C
P
D
@ TC = 100°C Maximum Power Dissipation 20
P
D
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Conti n uous Col lecto r Cu r rent 8.0 A Pulse Collecto r Current (Ref.F ig .C. T. 5) 24 Clamped Inductive Load current
Diode Continuous Forward Current 6.0 Diode M ax imum Fo r war d Cu r rent 18 RMS Isolation Voltage, Terminal to Case, t=1 min. 2500 V Gate-to-Emitt er Volt age ±20 Maximum Power Dissipation 39 W
Operating Junction and -55 to +175 Stor ag e Temperature Ra ng e °C Soldering Tempera tu re, for 10 sec. 300 (0.06 3 in. (1.6mm) fro m case) Mount ing Torq ue, 6-32 or M 3 Sc r ew 10 lbf·in (1. 1 N· m )
c
24
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
R
JC
θ
R
θJC
R
CS
θ
R
θJA
Wt Weight ––– 2.0 ––– g
Junction-to-Case- IGBT ––– ––– 3.8 Junction- to-Cas e- D io de ––– ––– 6.0 °C/W Case- t o- Sink , f l at, gre as e d surfac e ––– 0.50 ––– Junction-to-Ambient, typical socket mount ––– ––– 62
www.irf.com 1
02/19/03
Page 2
IRGIB7B60KD
/
/
C
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600——V
∆
T
Temperature Coeff. of Breakdown Voltage
J
—0.57—V/°C —1.82.2
V
CE(on)
Collecto r-to-Emitt er Voltage — 2.2 2.5 V
—2.32.5
V
∆
GE(th)
V
GE(th)
Gate Threshold Voltage 3.5 4.5 5.5 V
∆
T
Threshol d Voltage temp. coefficient — -9.5 — mV/°
J
gfe Forwa rd Tr a nscond uctan c e — 3. 7 — S
—1.0150
I
CES
Zero Gate Voltage Collector Current — 200 500 µA
— 720 1100
V
FM
Diode Forward Volt age Drop — 1.25 1.45 V
—1.201.40 —1.201.30
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
L
E
C
ies
C
oes
C
res
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
SCSOA Short Circuit Safe Oper at i n g A rea 10 — — µs
ISC (Peak) E
rec
t
rr
I
rr
Q
rr
Total Gate C harge (tur n-on) — 29 44 Gate -t o - Em itter C ha r ge (t ur n-on) — 3.7 5.6 nC Gate-to-Collector Charge (turn-on) — 14 21 Turn- O n Sw itch in g Loss — 160 268 Turn-Off Switching Loss — 160 268 µJ Total Switching Los s — 320 433 Turn-On delay tim e — 23 27 Rise time — 2 2 26 ns Turn-Off delay time — 140 150 Fall time — 32 42 Turn- O n Sw itch in g Loss — 220 330 Turn-Off Switching Loss — 270 381 µJ Total Switching Los s — 490 608 Turn-On delay tim e — 22 27 Rise time — 2 1 25 ns Turn-Off delay time — 180 198 Fall time — 40 56 WF2 Internal Emitter Induc tance — 7.5 — nH Measure d 5 mm fro m packa g e Input Capacitance — 440 660 Output Capacitance — 38 57 pF Reverse Transfer Capacitance — 16 24 f = 1.0MHz
Peak Short Circuit Collector Current — 70 — A Reverse Recovery Energ y of the Diode — 100 133 µJ Diode R ev e r s e R ec o v er y Time — 95 120 n s Peak Reverse Recovery Current — 13 17 A Diode R ev erse Rec overy Charge — 620 800 nC di/dt = 500A/µS
Note to are on page 12
2 www.irf.com
= 0V, IC = 500µA
V
GE
V
= 0V, IC = 1mA (25°C-150°C)
GE
= 8.0A, VGE = 15V, TJ = 25°C
I
C
= 8.0A, VGE = 15V, TJ = 150°C
I
C
= 8.0A, VGE = 15V, TJ = 175°C
I
C
V
= VGE, IC = 250µA
CE
VCE = VGE, IC = 1mA (25°C -150°C) V
= 50V, IC = 8.0A, PW = 80µs
CE
= 0V, VCE = 600V
V
GE
V
= 0V, VCE = 600V, TJ = 150°C
GE
= 0V, VCE = 600V, TJ = 175°C
V
GE
I
= 5.0A, VGE = 0V
F
I
= 5.0A, TJ = 150°C, VGE = 0V
F
= 5.0A, TJ = 175°C, VGE = 0V
I
F
= ±20V, VCE = 0V
V
GE
I
= 8.0A
C
V
= 400V
CC
V
= 15V
GE
I
= 8.0A, VCC = 400V
C
V
= 15V, RG = 50Ω, L = 1.1mH
GE
= 25°C
T
J
I
= 8.0A, VCC = 400V
C
V
GE
T
= 25°C
J
I
= 8.0A, VCC = 400V
C
V
GE
T
= 150°C
J
= 8.0A, VCC = 400V
I
C
V
GE
= 150°C
T
J
V
GE
V
CC
= 150°C, IC = 54A, Vp = 600V
T
J
d
= 15V, RG = 50Ω, L = 1.1mH
= 15V, RG = 50Ω, L = 1.1mH
d
= 15V, RG = 50Ω, L = 1.1mH
= 0V = 30V
VCC=500V,VGE = +15V to 0V,RG = 50Ω
= 150°C, Vp = 600V, RG = 100
T
J
Ω
VCC=360V,VGE = +15V to 0V
T
= 150°C
J
V
= 400V, IF = 8.0A, L = 1.07mH
CC
= 15V, RG = 50
V
GE
Ω
Ref.Fig.
5,6,7
9,10,11
9,10,11
12
8
23
CT1
CT4
CT4
CT4
13,15
WF1,WF2
14,16
CT4
WF1
22
4 CT2 CT3
WF4 WF4
17,18,19
20,21
CT4,WF3
Page 3
IRGIB7B60KD
14
12
10
8
) A
(
C
I
6
4
2
0
0 20 40 60 80 100 120 140 160 180
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
100
50
40
30
) W
(
t
o
t
P
20
10
0
0 20 40 60 80 100 120 140 160 180
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
100
(V)
J
100 µs
1ms
10ms
DC
≤ 150°C
10
) A
C
I
1
0
10 100 1000
V
(V)
CE
Fig. 4 - Reverse Bias SOA
TJ = 150°C; V
GE
=15V
10
) A
(
1
C
I
0.1
0.01 1 10 100 1000 10000
V
CE
Fig. 3 - Forward SOA
TC = 25°C; T
www.irf.com 3
Page 4
IRGIB7B60KD
40
VGE = 18V
35
VGE = 15V VGE = 12V
30
VGE = 10V VGE = 8.0V
25
) A
(
20
E C
I
15 10
5
0
0123456
V
(V)
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
40
35 30
25
) A
(
20
E C
I
15 10
5
0
VGE = 18V VGE = 15V
VGE = 12V VGE = 10V VGE = 8.0V
0123456
V
(V)
CE
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
40 35
30 25
) A
(
20
E C
I
15
10
5
0
VGE = 18V VGE = 15V
VGE = 12V VGE = 10V VGE = 8.0V
0123456
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80µs
30
25
20
) A
(
15
F
I
10
5
0
0.0 0.5 1.0 1.5 2.0
-40°C 25°C 150°C
VF (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
4 www.irf.com
Page 5
IRGIB7B60KD
20 18 16 14 12
) V
(
10
E C
V
8 6 4 2 0
5 101520
Fig. 9 - Typical V
V
GE
ICE = 4.0A I
= 8.0A
CE
I
= 16A
CE
(V)
vs. V
CE
GE
TJ = -40°C
20 18 16 14 12
) V
(
10
E C
V
8 6 4 2 0
5 101520
Fig. 10 - Typical V
V
GE
ICE = 4.0A I
= 8.0A
CE
I
= 16A
CE
(V)
vs. V
CE
GE
TJ = 25°C
20 18 16 14 12
) V
(
10
E C
V
8 6 4 2 0
5101520
Fig. 11 - Typical V
V
GE
ICE = 4.0A I
= 8.0A
CE
I
= 16A
CE
(V)
vs. V
CE
GE
TJ = 150°C
100
80
TJ = 25°C
60
) A
(
E C
I
40
TJ = 150°C
20
0
0 5 10 15 20
TJ = 150°C
V
(V)
GE
TJ = 25°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 360V; tp = 10µs
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Page 6
IRGIB7B60KD
600
500
400
)
J
µ
(
y
300
g
r
e
n E
200
100
0
0 5 10 15 20
Fig. 13 - Typ. Energy Loss vs. I
E
OFF
E
ON
IC (A)
C
TJ = 150°C; L=1.1mH; VCE= 400V,
RG= 50Ω; VGE= 15V
700
E
600
ON
1000
td
)
s
n
( e m
i T
100
g
n
i
h
c
i w S
10
OFF
t
F
td
ON
t
R
0 5 10 15 20
IC (A)
Fig. 14 - Typ. Switching Time vs. I
TJ = 150°C; L=1.1mH; VCE= 400V
RG= 50Ω; VGE= 15V
10000
C
500
)
J
µ
400
( y
g
r
e
300
n E
200
100
0
0 100 200 300 400 500
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. R TJ = 150°C; L=1.1mH; VCE= 400V
ICE= 8.0A; VGE= 15V
E
OFF
G
)
s
1000
n
( e m
i T
g
n
i
h
c
i
100
w S
10
td
OFF
t
F
t
R
0 100 200 300 400 500
RG (Ω)
Fig. 16 - Typ. Switching Time vs. R
TJ = 150°C; L=1.1mH; VCE= 400V
ICE= 8.0A; VGE= 15V
td
ON
G
6 www.irf.com
Page 7
IRGIB7B60KD
16
14
12
10
) A
(
8
R R
I
6
4
2
0
0 5 10 15 20
IF (A)
R
R
R
G =
G =
G =
R
G =
Fig. 17 - Typical Diode I
TJ = 150°C
16
50 Ω
150
270
470
RR
Ω
Ω
Ω
vs. I
20 18 16 14 12
) A
(
10
R R
I
8 6 4 2 0
0 100 200 300 400 500
RG (
Ω)
F
Fig. 18 - Typical Diode I
RR
vs. R
G
TJ = 150°C; IF = 8.0A
1500
14
12
10
) A
(
8
R R
I
6
4
2
0
0 100 200 300 400 500 600
diF /dt (A/µs)
Fig. 19- Typical Diode I
RR
VCC= 400V; VGE= 15V;
vs. diF/dt
150Ω
270Ω
diF /dt (A/µs)
) C
n
(
R R
Q
1000
500
0
0 100 200 300 400 500 600 700
470
Ω
Fig. 20 - Typical Diode Q
VCC= 400V; VGE= 15V;TJ = 150°C
50Ω
16A
8.0A
4.0A
RR
IF= 8.0A; TJ = 150°C
www.irf.com 7
Page 8
IRGIB7B60KD
250
) F
p
( e
c
n
a
t
i
c
a
p
a C
1000
100
200
)
J
150
µ
( y
g
r
e
n
100
E
50
0
0 5 10 15 20
IF (A)
Fig. 21 - Typical Diode E
470Ω
50
RR
150 Ω
Ω
vs. I
270Ω
F
TJ = 150°C
Cies
Coes
Cres
10
16
14 12
10
) V
(
8
E G
V
6 4
300V
400V
2
1
0 20 40 60 80 100
V
(V)
CE
Fig. 22- Typ. Capacitance vs. V
CE
VGE= 0V; f = 1MHz
0
0 5 10 15 20 25 30
Q G, Total Gate Charge (nC)
Fig. 23 - Typical Gate Charge vs. V
I
= 8.0A; L = 600µH
CE
GE
8 www.irf.com
Page 9
IRGIB7B60KD
τ
τ
10
)
C
J
h
t
Z (
e
s
n
0.1
o
p
s
e R
l
a m
r
e
0.01
h T
D = 0.50
1
0.20
0.10
R
R
R
R
0.05
0.01
0.02
SINGLE PULSE ( THERMAL RESPONSE )
τ
J
τ
J
τ
1
τ
1
Ci= τi/Ri
1
2
R
1
τ
2
τ
3
R
R
2
3
τ
3
τ
2
3
Ri (°C/W) τi (sec)
4
R
4
0.367 0.000164
τ
C
τ
0.425 0.000652
4
τ
4
1.070 0.081521
1.928 2.124500
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1
t1 , Rectangular Pulse Duration (sec)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
)
C
J
h
t
Z (
e
s
n
o
p
s
e R
l
a m
r
e
h T
D = 0.50
0.20
1
0.10
0.05
0.1
0.01
0.02
0.01
τ
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100
J
τ
J
τ
1
τ
1
Ci= τi/Ri
R
R
1
R
1
R
2
3
R
2
τ
2
τ
2
Ri (°C/W) τi (sec)
R
3
τ
2.530 0.001
C
τ
3
1.354 0.068689
τ
3
2.114 2.758
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
www.irf.com 9
Page 10
IRGIB7B60KD
0
1K
DUT
L
L
VCC
80 V
+
-
DUT
480V
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Driver
DC
360V
DUT
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
- 5V
Rg
L
DUT /
DRIVER
VCC
Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
I
CM
DUT
Rg
VCC
Fig.C.T.5 - Resistive Load Circuit
10 www.irf.com
Page 11
IRGIB7B60KD
(uS)
600
500
400
300
200
Vce (V)
100
0
-100
-200 0 0.2 0.4 0.6 0.8 1
tf
Vce
90% Ice
5% Vce
5% Ice
Ice
Eoff Loss
Time (u S)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
100
Q
0
t
-100
RR
12
10
8
6
4
2
0
-2
-4
15
10
5
600
500
400
300
Ice (A)
Vce (V)
200
100
0
-100
0.3 0.5 0.7 0.9
Eon Loss
Time (uS )
tr
Vce Ice
90% Ice 10% Ice
5% Vce
24
20
16
12
8
4
0
-4
Ice (A)
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
400
350
300
80
60
-200
(V)
F
V
-300
-400
Peak
I
RR
10%
Peak
IRR
-500
-600
-0.15 -0.05 0. 05 0.15 0.25
time (µS)
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
0
-5
-10
-15
-20
(A)
F
I
250
200
Vce (V)
150
100
50
0
0.00 10.00 20.00 30.00 40.00 50.00
Time
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
40
Ice (A)
20
0
www.irf.com 11
Page 12
IRGIB7B60KD
I
R
F
I
8
4
0
G
3
4
3
2
9
2
4
K
E
X
A
M
P
L
E
:
T
H
I
S
I
S
A
N
I
R
F
I
8
4
0
G
W
I
T
H
A
S
S
E
M
B
L
Y
P
A
R
T
N
U
M
B
E
R
L
O
G
O
R
E
C
T
I
F
I
E
R
I
N
T
E
R
N
A
T
I
O
N
A
L
A
S
S
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M
B
L
Y
L
O
T
C
O
D
E
W
E
E
K
2
4
L
I
N
E
K
Y
E
A
R
9
=
1
9
9
9
D
A
T
E
C
O
D
E
I
N
T
H
E
A
S
S
E
M
B
L
Y
L
I
N
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"
K
"
A
S
S
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L
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D
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W
W
2
4
1
9
9
9
L
O
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C
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D
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3
4
3
2
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
16.00 (.630)
15.80 (.622)
1 2 3
13.70 (.540)
13.50 (.530)
1.40 (.055)
3X
1.05 (.042)
2.54 (.100) 2X
3X
TO-220 Full-Pak Part Marking Information
3.70 (.145)
3.20 (.126)
1.15 (.045) MIN.
3.30 (. 13 0)
3.10 (. 12 2)
0.90 (.0 35 )
0.70 (.0 28 )
0.25 (.010)
3.40 (.133)
ø
3.10 (.123)
- A -
- B -
M
A M B
4.80 (.1 89 )
4.60 (.1 81 )
7.10 (.280)
6.70 (.263)
2.80 (.11 0)
2.60 (.10 2)
NOTES: 1 DIMENSI ONING & TOLE RANCING
PER ANSI Y14.5M, 1982 2 CONTROL LI NG DI M E NSION: INCH.
0.48 (. 01 9)
3X
0.44 (. 01 7)
2.85 (.1 12)
2.65 (.1 04)
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE
MINI MUM CRE EPAGE DISTANCE BET WEEN A-B-C-D = 4.80 (.189)
C
D
A
B
Notes:
VCC = 80% (V
), VGE = 15V, L = 100µH, RG = 50Ω.
CES
Energy losses include "tail" and diode reverse recovery.
TO-220AB FullPak package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
12 www.irf.com
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