Datasheet IRGBF30F Datasheet (International Rectifier)

PD - 9.773

TO-220AB

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IRGBF30F

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve

G

C

E

Fast Speed IGBT

V

= 900V

CES

V

@VGE = 15V, IC = 11A

CE(sat)

≤ 3.7V

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 20
IC @ TC = 100°C Continuous Collector Current 11 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
T

J

T

STG

Collector-to-Emitter Voltage 900 V

Pulsed Collector Current 40
Clamped Inductive Load Current 40
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 10 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight — 2.0 (0.07) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case — — 1.2
Case-to-Sink, flat, greased surface — 0.50 — °C/W
Junction-to-Ambient, typical socket mount — — 80

Revision 0

C-243

IRGBF30F

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 900 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.83 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.6 3.7 IC = 11A VGE = 15V

— 3.3 — V IC = 20A See Fig. 2, 5
— 2.9 — IC = 11A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 3.6 6.9 — S VCE = 100V, IC = 11A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 900V

— — 1000 VGE = 0V, VCE = 900V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 22 33 IC = 11A
Gate - Emitter Charge (turn-on) — 5.1 7.7 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 8.0 12 VGE = 15V
Turn-On Delay Time — 27 — TJ = 25°C
Rise Time — 9.7 — ns IC = 11A, VCC = 720V
Turn-Off Delay Time — 160 280 VGE = 15V, RG = 23Ω
Fall Time — 140 240 Energy losses include "tail"
Turn-On Switching Loss — 0.33 —
Turn-Off Switching Loss — 0.67 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 1.0 1.9
Turn-On Delay Time — 27 — TJ = 150°C,
Rise Time — 12 — ns IC = 11A, VCC = 720V
Turn-Off Delay Time — 260 — VGE = 15V, RG = 23Ω
Fall Time — 250 — Energy losses include "tail"
Total Switching Loss — 2.0 — mJ See Fig. 10, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 560 — VGE = 0V
Output Capacitance — 50 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 7.3 — ƒ = 1.0MHz

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 23Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-244

Pulse width 5.0µs,

single shot.

IRGBF30F

LO AD CURRENT (A )

f, F requ ency (kHz )

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltag e (V)

C

I , Collector-to-Emitter C urrent (A)

,

GE

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25

20

15

Squ are w ave :

60% o f ra ted

10

5

0

0.1 1 1 0 100

vo lta ge

Id ea l diod e s

For both :

Duty cycle: 50%
T = 125°C

J

T = 90 ° C

sink
Gate drive as sp e cifie d
Po we r Dis sipa tion = 2 1W

Tr ia ngu lar w ave:

Cla mp v o lta g e:
80% of ra ted

Fig. 1 - Typical Load Current vs. Frequency

100

(For square wave, I=I

T = 25 °C

J

of fundamental; for triangular wave, I=IPK)

RMS

100

T = 2 5°C

J

T = 1 50°C

J

10

1

1 10

V

Fig. 2 - Typical Output Characteristics

T = 15 0°C

J

V = 15V

G E

20µs PULS E W IDTH

itt

C-245

10

V = 1 00V

CC

1

5 10 15 20

V

Gate-to-Em itte r Voltage (V)

5µs PUL SE WIDTH

Fig. 3 - Typical Transfer Characteristics

IRGBF30F

Maximum DC Collector Current (A)

, Case Temperature (°C)

C

, Case Tem perature (°C)

C

CE

V , C ollector-to-E m itter Voltage (V)

t , Rectang ular Pulse Duratio n (s ec)

1

thJC

Thermal Response (Z )

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20

16

12

8

4

0

25 50 75 100 1 2 5 150

V = 15V

G E

T

Fig. 4 - Maximum Collector Current vs.

Case Temperature

10

5.0

V = 15V

GE

8 0µ s PULSE WIDTH

I = 22A

C

4.0

I = 1 1A

3.0

2.0

-60 -4 0 -20 0 2 0 40 60 80 1 0 0 120 140 160

C

I = 5.5 A

C

T

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

1

D = 0.50

0.1

0.01

0.0 0 0 0 1 0.0 0 0 1 0.0 0 1 0.01 0.1 1 10

0.20

P

1 2

th JC

DM

t

C

0.10

0.05

0.02

0.01

S INGLE PULSE
(THERMAL RESPO NSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

D M

J

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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1

t

2

IRGBF30F

CE

C, Capacitance (pF)

, Collector-to-Em

er Voltage (V)

GE

V , G ate-to-Emitter Voltage (V )

, Total Gate Charge (nC)

g

To tal Switching L osse s (mJ)

W

, Case Tem perature (°C)

Total Switching Losses (mJ)

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10 0 0

800

600

400

200

0

1 10 100

V

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

itt

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

1.10

V = 72 0V

CC

V = 1 5V

G E

T = 25°C

C

1.08

I = 11A

C

20

V = 40 0V

CE

I = 11A

C

16

12

8

4

0

0 5 10 15 20 25

Q

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 22
V = 15V
V = 7 20V

G
GE
CC

Ω

I = 22A

C

1.06

1.04

1.02

1.00

0.98
20 25 30 35 40 45 50 55

Fig. 9 - Typical Switching Losses vs. Gate

R , G ate Resistance ( )

G

Ω

Resistance

C-247

I = 11A

C

1

0.1

-6 0 -40 -2 0 0 20 40 60 80 100 120 140 160

T

C

I = 5.5 A

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

IRGBF30F

Total Sw itching Losses (mJ)

, Collecto r- to-Emitter Current (A)

C

CE

,

I , C ollector-to-E mitter Cu rrent (A )

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6.0

R = 22
T = 150°C
V = 7 20V

5.0

V = 15V

4.0

3.0

2.0

1.0

0.0
0 5 10 15 20 25

G
C
CC
G E

Ω

I

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

V = 20V

G E

GE

T = 125°C

J

S AFE OP ERA TIN G ARE A

10

1

0.1
1 10 100 1000

V

C olle cto r-to-Em itter V o ltage (V )

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix F: Section D - page D-8

Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

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