Datasheet IRGBC40S Datasheet (International Rectifier)

PD - 9.690A

TO-220AB

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IRGBC40S

Standard Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR

Features

• Switching-loss rating includes all "tail" losses

• Optimized for line frequency operation ( to 400 Hz)

C

V

= 600V

CES

See Fig. 1 for Current vs. Frequency curve

G

V

E

@VGE = 15V, IC = 31A

CE(sat)

≤ 1.8V

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 50
IC @ TC = 100°C Continuous Collector Current 31 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 160 W
PD @ TC = 100°C Maximum Power Dissipation 65
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 240
Clamped Inductive Load Current 100
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 15 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight — 2.0 (0.07) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case — — 0.77
Case-to-Sink, flat, greased surface — 0.50 — °C/W
Junction-to-Ambient, typical socket mount — — 80

Revision 0

C-15

IRGBC40S

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temp. Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.6 1.8 IC = 31A VGE = 15V

— 2.2 — V IC = 60A See Fig. 2, 5
— 1.7 — IC = 31A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemp. Coeff. of Threshold Voltage — -9.3 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 12 21 — S VCE = 100V, IC = 31A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 62 90 IC = 31A
Gate - Emitter Charge (turn-on) — 10 15 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 27 40 VGE = 15V
Turn-On Delay Time — 28 — TJ = 25°C
Rise Time — 50 — ns IC = 31A, VCC = 480V
Turn-Off Delay Time — 1100 1500 VGE = 15V, RG = 10Ω
Fall Time — 620 1100 Energy losses include "tail"
Turn-On Switching Loss — 1.0 —
Turn-Off Switching Loss — 12 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 13 20
Turn-On Delay Time — 29 — TJ = 150°C,
Rise Time — 53 — ns IC = 31A, VCC = 480V
Turn-Off Delay Time — 1600 — VGE = 15V, RG = 10Ω
Fall Time — 1200 — Energy losses include "tail"
Total Switching Loss — 22 — mJ See Fig. 10, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 1600 — VGE = 0V
Output Capacitance — 140 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 20 — ƒ = 1.0MHz

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 10Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-16

Pulse width 5.0µs,

single shot.

IRGBC40S

LOAD CURRENT (A)

f, Frequency (kHz)

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltage (V)

C

I , Collector-to-Emitter Current (A)

, Gate-to-Em

er Voltage (V)

GE

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60

Fo r bo th:

Duty cycle: 5 0 %
T = 125 ° C

J

T = 90°C

sin k

Gate d riv e as specifie d

40

Squ are wave :

60% of rated
voltage

20

Ideal diodes

0

0.1 1 10 100

Power Dissipation = 2 8 W

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

of fundamental; for triangular wave, I=IPK)

RMS

Tria ngular wave:

Clamp volta g e :
80% of ra ted

1000

100

10

1

0.1 1 1 0

V

Fig. 2 - Typical Output Characteristics

T = 25°C

J

T = 150°C

J

V = 15V

G E

20µs P UL SE WIDTH

itt

C-17

1000

T = 25°C

J

T = 150°C

100

10

1

5 10 15 20

V

J

V = 100 V

CC

5µs PUL SE WIDTH

itt

Fig. 3 - Typical Transfer Characteristics

IRGBC40S

Maxim um DC Collecto r Current (A )

, Case Tem perature (°C)

C

, Case Temperature (°C)

C

CE

V , Collector-to-Emitter Voltage (V)

t , Rectangular Pulse Duration (sec)

1

thJC

Thermal Response (Z )

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70

60

50

40

30

20

10

0

25 50 75 100 125 150

LIMITED BY PACKAGE

V = 15V

G E

T

Fig. 4 - Maximum Collector Current vs.

Case Temperature

1

3.0

V = 15V

G E

80 µs PULSE WIDTH

I = 62A

2.5

2.0

1.5

1.0

-6 0 -40 -20 0 20 40 60 80 100 120 1 40 1 6 0

C

I = 31A

C

I = 16A

C

T

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

D = 0.50

0.1

0.01

0.0 0 001 0.0001 0.0 0 1 0.01 0.1 1 10

0.2 0

0.1 0

0.05

0.0 2

0.0 1

SIN GLE PUL SE
(THERMAL RESPONS E )

Note s:

1. Duty facto r D = t / t

2. Peak T = P x Z + T

DM

J

P

DM

2

1

thJC

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

C-18

t

1

t

2

C

IRGBC40S

CE

C, C apacita nce (pF)

, Collector-to-Em

er Voltage (V)

GE

V , Gate-to-Emitter Voltage (V)

, Total Gate Charge (nC)

g

Total Switching Losses (mJ)

W

, Case Temperature (°C)

Total S witching Losses (m J)

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3000

2000

1000

0

1 10 10 0

V

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

itt

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

14.6

V = 480V

CC

V = 15V

G E

14.4

T = 25 °C

C

I = 31A

C

14.2

20

V = 40 0V

CE

I = 31A

C

16

12

8

4

0

0 1 0 20 30 40 50 6 0

Q

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

R = 10
V = 15V
V = 480V

G
GE
CC

Ω

I = 62A

C

I = 3 1A

C

14.0

13.8

13.6

13.4

13.2
0 10 2 0 30 40 50 60

Fig. 9 - Typical Switching Losses vs. Gate

R , Gate Resistance ( )

G

Resistance

I = 1 6A

10

1

-60 -40 -20 0 20 40 60 80 100 1 2 0 140 160

Ω

T

C

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

C-19

IRGBC40S

Total S witching Losses (mJ)

, Collecto r-to-Emitter Current (A)

C

CE

,

I , Collector-to-Emitter Current (A )

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50

R = 10
T = 1 50°C
V = 480V

40

V = 15V

30

20

10

0

0 10 20 30 40 5 0 60 70

G
C
CC
G E

Ω

I

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V = 20V

G E

GE

T = 125°C

J

100

S AFE OPERA TING AR E A

10

1

1 10 100 10 0 0

V

C ollector-to-E m itter V o ltage (V )

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix C: Section D - page D-5

Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

C-20