Datasheet IRGBC40K Datasheet (International Rectifier)

PD - 9.1073

TO-220AB

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IRGBC40K

INSULATED GATE BIPOLAR TRANSISTOR

Short Circuit Rated

UltraFast IGBT

Features

• Short circuit rated - 10µs @ 125°C, VGE = 15V

• Switching-loss rating includes all "tail" losses

• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve

G

C

V

= 600V

CES

V

E

@VGE = 15V, IC = 25A

CE(sat)

≤ 3.2V

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 42
IC @ TC = 100°C Continuous Collector Current 25 A
I

CM

I

LM

t

sc

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 160 W
PD @ TC = 100°C Maximum Power Dissipation 65
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 84
Clamped Inductive Load Current 84
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 15 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight — 2 (0.07) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case — — 0.77
Case-to-Sink, flat, greased surface — 0.50 — °C/W
Junction-to-Ambient, typical socket mount — — 80

C-849

Revision 1

IRGBC40K

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

sc

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.46 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.1 3.2 IC = 25A VGE = 15V

— 2.8 — V IC = 42A See Fig. 2, 5
— 2.5 — IC = 25A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 7.0 14 — S VCE = 100V, IC = 25A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 61 92 IC = 25A
Gate - Emitter Charge (turn-on) — 13 19 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 22 33 VGE = 15V
Turn-On Delay Time — 35 — TJ = 25°C
Rise Time — 27 — ns IC = 25A, VCC = 480V
Turn-Off Delay Time — 160 240 VGE = 15V, RG = 10Ω
Fall Time — 130 200 Energy losses include "tail"
Turn-On Switching Loss — 0.52 —
Turn-Off Switching Loss — 1.2 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 1.7 2.6
Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C

VGE = 15V, RG = 10Ω, V
Turn-On Delay Time — 34 — TJ = 150°C,
Rise Time — 28 — ns IC = 25A, VCC = 480V
Turn-Off Delay Time — 300 — VGE = 15V, RG = 10Ω
Fall Time — 310 — Energy losses include "tail"
Total Switching Loss — 3.6 — mJ See Fig. 10, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 1500 — VGE = 0V
Output Capacitance — 190 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 17 — ƒ = 1.0MHz

CPK

< 500V

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 10Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-850

Pulse width 5.0µs,

single shot.

IRGBC40K

A

A

A

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50

40

30

20

Sq uare w a v e:

60% of ra ted
v olta g e

For b o th:

Du ty c y cle : 5 0%
T = 1 25 ° C

J

T = 9 0°C

sin k
Ga te driv e a s spe cified
Pow er D issip atio n = 2 8W

Tri a ngu lar w av e:

Cl a mp vol tag e :
80% of rate d

Load Current (A)

10

0

0.1 1 10 100

Ideal diodes

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

100

of fundamental; for triangular wave, I=IPK)

RMS

1000

10

1

C

I , Collector-to-Emitter Current (A)

0.1

0.1 1 10

V , Collector-to-Emitter Voltage (V)

CE

Fig. 2 - Typical Output Characteristics

T = 150°C

J

T = 25°C

J

V = 15V

GE

20µs PULSE WIDTH

C-851

100

T = 150°C

J

10

C

I , Collector-to-Emitter Current (A)

1

5 10 15 20

T = 25°C

J

V = 100V

CC

5µs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

Fig. 3 - Typical Transfer Characteristics

IRGBC40K

A

A

t , Rectangular Pulse Duration (sec)

1

thJC

Thermal Response (Z )

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50

40

30

20

10

V = 15V

GE

Maximum DC Collector Current (A)

0

25 50 75 100 125 150

T , Case Temperature (°C)

C

Fig. 4 - Maximum Collector Current vs.

Case Temperature

1

5.0

V = 15V

GE

80µs PULSE WIDTH

I = 50A

4.0

3.0

2.0

CE

V , Collector-to-Emitter Voltage (V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Case Temperature (°C)

C

C

I = 25A

C

I = 13A

C

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

D = 0.50

0.2 0

0.1

0.1 0

0.05

0.0 2

0.0 1

0.01

0.0 0 001 0.0001 0.0 0 1 0.01 0.1 1 10

P

DM

SIN GLE PUL SE
(THERMAL RESPONS E )

Note s:

1. Duty facto r D = t / t

2. Peak T = P x Z + T

J

DM

2

1

thJC

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

C-852

t

1

t

2

C

IRGBC40K

A

A

A

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2500

2000

1500

1000

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C, Capacitance (pF)

500

C

res

0

1 10 100

V , Collector-to-Emitter Voltage (V)

CE

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

2.2

V = 480V

CC

V = 15V

GE

T = 25°C

C

2.1

I = 25A

C

20

V = 400V

CE

I = 25A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 20 40 60 80

Q , Total Gate Charge (nC)

g

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

I = 50A

C

2.0

1.9

1.8

Total Switching Losses (mJ)

1.7

1.6
0 10 20 30 40 50 60

Fig. 9 - Typical Switching Losses vs. Gate

R , Gate Resistance (Ω)

G

Resistance

A

C-853

I = 25A

C

1

Total Switching Losses (mJ)

R = 10
V = 15V
V = 480V

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

Ω

G
GE
CC

T , Case Temperature (°C)

C

I = 13A

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

IRGBC40K

A

1000

A

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10

R = 10
T = 150°C
V = 480V

8

V = 15V

6

4

2

Total Switching Losses (mJ)

0

0 10 20 30 40 50 60

Ω

G
C
CC
GE

I , Collector-to-Emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V = 20V

GE

T = 125°C

J

100

SAFE OPERATING AREA

10

C

I , Collector-to-Emitter Current (A)

1

1 10 100

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix C: Section D - page D-5

Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

C-854