Datasheet IRGBC40F Datasheet (International Rectifier)

PD - 9.691A

TO-220AB

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IRGBC40F

Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency ( 1 to

C

V

= 600V

CES

10kHz) See Fig. 1 for Current vs. Frequency curve

G

V

E

@VGE = 15V, IC = 27A

CE(sat)

≤ 2.0V

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 49
IC @ TC = 100°C Continuous Collector Current 27 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 160 W
PD @ TC = 100°C Maximum Power Dissipation 65
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 200
Clamped Inductive Load Current 200
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 15 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight — 2.0 (0.07) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case — — 0.77
Case-to-Sink, flat, greased surface — 0.50 — °C/W
Junction-to-Ambient, typical socket mount — — 80

Revision 0

C-63

IRGBC40F

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temp. Coeff. of Breakdown Voltage — 0.70 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.7 2.0 IC = 27A VGE = 15V

— 2.2 — V IC = 49A See Fig. 2, 5
— 1.9 — IC = 27A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemp. Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 9.2 12 — S VCE = 100V, IC = 27A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 59 80 IC = 27A
Gate - Emitter Charge (turn-on) — 8.6 10 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 25 42 VGE = 15V
Turn-On Delay Time — 26 — TJ = 25°C
Rise Time — 37 — ns IC = 27A, VCC = 480V
Turn-Off Delay Time — 240 410 VGE = 15V, RG = 10Ω
Fall Time — 230 420 Energy losses include "tail"
Turn-On Switching Loss — 0.65 —
Turn-Off Switching Loss — 3.0 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 3.65 6.0
Turn-On Delay Time — 28 — TJ = 150°C,
Rise Time — 37 — ns IC = 27A, VCC = 480V
Turn-Off Delay Time — 380 — VGE = 15V, RG = 10Ω
Fall Time — 460 — Energy losses include "tail"
Total Switching Loss — 6.0 — mJ See Fig. 10, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 1500 — VGE = 0V
Output Capacitance — 190 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 20 — ƒ = 1.0MHz

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 10Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-64

Pulse width 5.0µs,

single shot.

IRGBC40F

LOAD CURRENT (A)

f, Freque ncy (kHz)

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltage (V)

C

I , C ollector-to-Emitter C urrent (A)

,

GE

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60

40

Square wave:

60 % of rated
vo ltage

20

Ideal diodes

0

0.1 1 10 100

For both:

Duty cy cle: 5 0%
T = 1 25°C

J

T = 90°C

sink
Gate driv e as specified
Power Dissipa tion = 2 8W

Tria ngular wave:

Clamp vo ltage:
80 % of ra te d

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

100 0

of fundamental; for triangular wave, I=IPK)

RMS

100 0

100

10

1

0.1 1 1 0

V

Fig. 2 - Typical Output Characteristics

T = 25°C

J

T = 15 0 °C

J

V = 1 5V

G E

20µs PULSE WIDTH

itt

C-65

100

T = 150°C

J

10

T = 25°C

J

1

0.1

V = 100V

CC

0.01
5 10 15 2 0

V

Gate-to-Em itter Voltage (V)

5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

IRGBC40F

Maximum DC Collector C urrent (A)

, Case Temperature (°C)

C

, Case Temperature (°C)

C

CE

V , Collector-to-Emitter Voltage (V)

t , R ectangular Pulse Duration (sec)

1

thJC

Thermal Response (Z )

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50

40

30

20

10

0

25 50 75 100 12 5 1 50

V = 15V

GE

T

Fig. 4 - Maximum Collector Current vs.

Case Temperature

1

3.0

V = 15V

G E

80µs P ULSE W IDTH

I = 54A

2.5

2.0

1.5

1.0

-6 0 -4 0 -2 0 0 20 4 0 6 0 80 100 1 20 140 160

C

I = 27A

C

I = 1 4A

C

T

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

D = 0.50

0.1

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

0.2 0

0.1 0

0.05

0.0 2

0.0 1

S ING LE PULSE
(THERMAL R ESPONSE)

Notes:

1. D uty fac tor D = t / t

2. P eak T = P x Z + T

DM

J

P

DM

2

1

thJC

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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t

1

t

2

C

IRGBC40F

CE

C, Capacitance (pF)

, Collector-to-Em

er Voltage (V)

GE

V , Gate-to-Emitter Voltage (V)

, Total Gate Charg e (nC)

g

Total Switching Losses (mJ)

W

, Case Temperature (°C)

Total Switching Losses (m J)

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300 0

250 0

200 0

150 0

100 0

500

0

1 10 100

V

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

itt

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

4.8

V = 480V

CC

V = 15V

G E

T = 25°C

C

4.7

I = 27A

C

20

V = 400V

CE

I = 27A

C

16

12

8

4

0

0 10 20 30 40 50 6 0

Q

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

R = 10
V = 15V
V = 480V

G
GE
CC

Ω

4.6

4.5

4.4

4.3
0 10 2 0 3 0 40 5 0 6 0

Fig. 9 - Typical Switching Losses vs. Gate

R , Gate Resistance ( )

G

Resistance

I = 54A

C

10

1

-6 0 -40 -20 0 20 4 0 60 8 0 1 00 120 140 160

Ω

T

C

I = 27A

C

I = 14A

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

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IRGBC40F

Total Switching Losses (m J)

, Collector-to-Em

er Current (A)

C

CE

,

)

I , C ollector-to-Em itter Cu rrent (A)

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20

R = 10
T = 150°C
V = 480V

16

V = 15V

12

8

4

0

0 20 40 60

G
C
CC
G E

Ω

I

C

itt

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100 0

V = 20V

G E

GE

T = 125°C

J

100

S A FE OPE RA TIN G AREA

10

1

1 1 0 100 100 0

V

C ollector-to-E m itter Voltage (V

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix C: Section D - page D-5

Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

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