Datasheet IRGBC30M-S Datasheet (International Rectifier)

PD - 9.1133

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IRGBC30M-S

INSULATED GATE BIPOLAR TRANSISTOR

Short Circuit Rated

Fast IGBT

Features

• Short circuit rated - 10µs @ 125°C, VGE = 15V

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve

G

C

V

= 600V

CES

V

E

@VGE = 15V, IC = 16A

CE(sat)

≤ 2.9V

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 26
IC @ TC = 100°C Continuous Collector Current 16 A
I

CM

I

LM

t

sc

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 52
Clamped Inductive Load Current 52
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 10 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

SMD-220

Thermal Resistance

R

θJC

R

θJA

R

θJA

Wt Weight — 2 (0.07) — g (oz)

** When mounted on 1" square PCB (FR-4 or G-10 Material)

For recommended footprint and soldering techniques refer to application note #AN-994.

Parameter Min. Typ. Max. Units
Junction-to-Case — — 1.2
Junction-to-Ambient, (PCB mount)** — — 40 °C/W
Junction-to-Ambient, typical socket mount — — 80

Revision 1

C-341

IRGBC30M-S

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

sc

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.65 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.9 2.9 IC = 14A VGE = 15V

— 2.7 — V IC = 24A See Fig. 2, 5
— 2.2 — IC = 14A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 3.3 6.5 — S VCE = 100V, IC = 14A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 35 53 IC = 16A
Gate - Emitter Charge (turn-on) — 7.4 11 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 14 21 VGE = 15V
Turn-On Delay Time — 31 — TJ = 25°C
Rise Time — 31 — ns IC = 16A, VCC = 480V
Turn-Off Delay Time — 280 420 VGE = 15V, RG = 23Ω
Fall Time — 310 470 Energy losses include "tail"
Turn-On Switching Loss — 0.4 —
Turn-Off Switching Loss — 1.9 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 2.3 3.5
Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C

VGE = 15V, RG = 23Ω, V
Turn-On Delay Time — 31 — TJ = 150°C,
Rise Time — 30 — ns IC = 16A, VCC = 480V
Turn-Off Delay Time — 530 — VGE = 15V, RG = 23Ω
Fall Time — 660 — Energy losses include "tail"
Total Switching Loss — 4.4 — mJ See Fig. 10, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 750 — VGE = 0V
Output Capacitance — 110 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 9.3 — ƒ = 1.0MHz

CPK

< 500V

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 23Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-342

Pulse width 5.0µs,

single shot.

IRGBC30M-S

A

A

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30

20

Square wave:

60% of rated
voltage

10

Ideal diodes

0

0.1 1 10 100

For both:

Duty cycle: 50%
T = 125°C

J

T = 90°C

sink

Gate drive as specified

Power Dissipation = 21W

Triangular wave:

Clamp voltage:
80% of rated

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

100

of fundamental; for triangular wave, I=IPK)

RMS

100

A

10

1

C

I , Collector-to-Emitter Current (A)

0.1

0.1 1 10

V , Collector-to-Emitter Voltage (V)

CE

Fig. 2 - Typical Output Characteristics

T = 25°C

J

T = 150°C

J

V = 15V

GE

20µs PULSE WIDTH

C-343

T = 150°C

J

10

C

I , Collector-to-Emitter Current (A)

1

5 10 15 20

V , Gate-to-Emitter Voltage (V)

GE

T = 25°C

J

V = 100V

CC

5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

IRGBC30M-S

A

A

t , Re ctangular Pulse D ura tion ( sec)

1

thJC

The rm al Re sponse (Z )

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30

25

20

15

10

5

V = 15V

GE

Maximum DC Collector Current (A)

0

25 50 75 100 125 150

T , Case Temperature (°C)

C

Fig. 4 - Maximum Collector Current vs.

Case Temperature

10

5.0

V = 15V

GE

80µs PULSE WIDTH

4.0

3.0

2.0

1.0

CE

V , Collector-to-Emitter Voltage (V)

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Case Temperature (°C)

C

I = 32A

C

I = 16A

C

I = 8.0A

C

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

1

D = 0 .50

0.1

0.0 1

0.00001 0.0 0 01 0.00 1 0.01 0.1 1 1 0

0.20

P

0.10

0.05

0.02

0.01

S ING L E PULSE
(T H ER MA L RES P O NS E)

Note s :

1. Duty facto r D = t / t

2. Peak T = P x Z + T

DM

J

D M

1 2

thJC

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

C-344

t

1

t

2

C

IRGBC30M-S

A

A

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1400

1200

1000

800

600

C, Capacitance (pF)

400

200

0

1 10 100

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

V , Collector-to-Emitter Voltage (V)

CE

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

2.60

V = 480V

CC

V = 15V

GE

T = 25°C

C

2.55

I = 16A

C

2.50

2.45

20

V = 400V

CE

I = 16A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 10 20 30 40

Q , Total Gate Charge (nC)

g

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

R = 23
V = 15V
V = 480V

10

G
GE
CC

Ω

I = 32A

C

I = 16A

C

I = 8.0A

C

2.40

2.35

2.30
0 10 20 30 40 50 60

Fig. 9 - Typical Switching Losses vs. Gate

R , Gate Resistance (Ω)

G

Resistance

A

C-345

1

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Case Temperature (°C)

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

A

IRGBC30M-S

1000

A

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12

R = 23
T = 150°C
V = 480V

10

V = 15V

8

6

4

2

0

0 10 20 30 40

Ω

G
C
CC
GE

I , Collector-to-Emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

V = 20V

GE

T = 125°C

J

SAFE OPERATING AREA

10

C

I , Collector-to-Emitter Current (A)

A

1

1 10 100

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix C: Section D - page D-5

Package Outline 2 - SMD-220 Section D - page D-12

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

C-346