Page 1
PD - 9.1107
IRGBC30KD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Short circuit rated -10µs @125°C, V
• Switching-loss rating includes all "tail" losses
• HEXFRED
TM
soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
GE
= 15V
G
C
E
Short Circuit Rated
UltraFast CoPack IGBT
V
= 600V
CES
V
@VGE = 15V, IC = 14A
CE(sat)
≤ 3.8V
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
V
CES
@ TC = 25°C Continuous Collector Current 23
I
C
IC @ TC = 100°C Continuous Collector Current 14
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 12
I
FM
t
sc
V
GE
@ TC = 25°C Maximum Power Dissipation 100 W
P
D
PD @ TC = 100°C Maximum Power Dissipation 42
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 46 A
Clamped Inductive Load Current 46
Diode Maximum Forward Current 46
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ------ 2 (0.07) ------ g (oz)
Junction-to-Case - IGBT ------ ------ 1.2
Junction-to-Case - Diode ------ ------ 2.5 °C/W
Case-to-Sink, flat, greased surface ------ 0.50 -----Junction-to-Ambient, typical socket mount ----- ----- 80
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IRGBC30KD2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage---- 0.30 ---- V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ---- 2.5 3.8 IC = 14A VGE = 15V
---- 3.3 ---- V I
---- 2.5 ---- I
= 23A See Fig. 2, 5
C
= 14A, TJ = 150°C
C
Gate Threshold Voltage 3.0 ---- 5.5 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 3.3 6.5 ---- S VCE = 100V, IC = 14A
Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 2500 V
= 0V, VCE = 600V, TJ = 150°C
GE
Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 12A See Fig. 13
---- 1.3 1.6 I
= 12A, TJ = 150°C
C
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
Q
Q
ge
Q
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
g
gc
Total Gate Charge (turn-on) ---- 39 58 IC = 14A
Gate - Emitter Charge (turn-on) ---- 8.7 13 nC VCC = 400V
Gate - Collector Charge (turn-on) ---- 15 23 See Fig. 8
Turn-On Delay Time ---- 67 ---- TJ = 25°C
Rise Time ---- 120 ---- ns IC = 14A, VCC = 480V
Turn-Off Delay Time ---- 110 170 VGE = 15V, RG = 23Ω
Fall Time ---- 94 140 Energy losses include "tail" and
Turn-On Switching Loss ---- 1.1 ---- diode reverse recovery.
Turn-Off Switching Loss ---- 0.5 ---- mJ See Fig. 9, 10, 11, 18
Total Switching Loss ---- 1.6 2.4
Short Circuit Withstand Time 10 ---- ---- µs VCC = 360V, TJ = 125°C
= 15V, RG = 23Ω, V
V
GE
Turn-On Delay Time ---- 64 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time ---- 100 ---- ns IC = 14A, VCC = 480V
Turn-Off Delay Time ---- 190 ---- VGE = 15V, RG = 23Ω
Fall Time ---- 180 ---- Energy losses include "tail" and
Total Switching Loss ---- 2.2 ---- mJ diode reverse recovery.
Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package
Input Capacitance ---- 740 ---- VGE = 0V
Output Capacitance ---- 92 ---- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ---- 9. 4 ---- ƒ = 1.0MHz
Diode Reverse Recovery Time ---- 42 60 n s TJ = 25°C See Fig.
---- 80 120 T
= 125°C 14 IF = 12A
J
Diode Peak Reverse Recovery Current ---- 3.5 6.0 A TJ = 25°C See Fig.
---- 5.6 10 TJ = 125°C 15 VR = 200V
Q
rr
µs di
---- A/µs T
Notes:
---- TJ = 125°C 17
Repetitive rating; V
by max. junction temperature. ( See fig. 20 )
Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig.
=20V, pulse width limited
GE
---- 220 600 T
/dtDiode Peak Rate of Fall of Recovery ---- 180
(rec)M
= 25°C See Fig. During tb---- 120
J
V
=80%(V
CC
), VGE=20V, L=10µH,
CES
RG= 23Ω, ( See fig. 19 )
= 125°C 16 di/dt = 200A/
J
Pulse width 5.0µs,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
single shot.
CPK
< 500V
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IRGBC30KD2
A
A
A
15
Duty cycle: 50%
T = 125°C
J
T = 90°C
12
9
60% of rated
voltage
6
Load Current (A)
3
0
0.1 1 10 100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
sink
Gate drive as specified
Turn-on losses include
effects of reverse recov ery
Power Dissipation = 21W
100
T = 25°C
J
10
1
C
I , Collector-to-Emitter Current (A)
0.1
0.1 1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
20µs PULSE W I DTH
T = 150°C
GE
J
100
T = 150°C
J
10
T = 25°C
J
C
I , Collector-to-Emitter Current (A)
1
5 101520
V , Gate-to-Emitter Voltage (V)
GE
V = 100V
CC
5µs PU LSE WIDTH
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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IRGBC30KD2
A
A
25
20
15
10
5
V = 15V
GE
Maximum DC Collector Current (A)
0
25 50 75 100 125 150
T , Case Temperature (°C)
C
Fig. 4 - Maximum Collector Current vs.
Case Temperature
10
6.0
V = 15V
GE
80µs PULSE WIDTH
5.0
I = 28A
4.0
3.0
2.0
1.0
CE
V , Collector-to-Emitter Voltage (V)
0.0
-60 -40 -20 0 20 40 6 0 80 100 120 140 160
T , Case Temperature (°C)
C
C
I = 14A
C
I = 7.0A
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
thJC
1
D = 0.50
0.20
P
12
DM
t
1
t
2
C
0.10
0.1
0.05
Thermal Response (Z )
0.01
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
JDMthJC
1
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
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IRGBC30KD2
A
A
A
1400
1200
1000
800
600
C, Capacita nce (pF)
400
200
0
1 10 100
V = 0V, f = 1MHz
GE
C = C + C , C SHO RT ED
ies ge gc ce
C = C
res gc
C = C + C
oes ce gc
C
ies
C
oes
C
res
V , Collector-to-Emitter Voltage (V)
CE
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.80
V = 480V
CC
V = 15V
GE
T = 25°C
C
1.76
I = 14A
C
20
V = 400V
CE
I = 14A
C
16
12
8
4
GE
V , Gate-to-Emitter Voltage (V)
0
0 10203040
Q , Total Gate Charge (nC)
g
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
R = 23
V = 15V
V = 480V
G
GE
CC
Ω
1.72
1.68
1.64
Total Switching Losses (mJ)
1.60
1.56
0 102030405060
R , Gate Resista nce (Ω)
G
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
10
1
I = 24A
C
I = 14A
C
I = 7.0A
C
Total Switching Losses (mJ)
A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Case Temperature (°C)
C
Fig. 10 - Typical Switching Losses vs.
Case Temperature
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IRGBC30KD2
A
0
A
8.0
R = 23
T = 150°C
V = 480V
V = 15V
6.0
4.0
2.0
Ω
G
C
CC
GE
Total Switching Losses (mJ)
0.0
0 102030
I , Collector-to-Emitter Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
100
V = 20V
GE
T = 125°C
J
SAFE OPERATIN G AR EA
10
C
I , Collector-to-Emitter Current (A)
1
1 10 100 100
V , Collector-to-Emitter Voltage (V)
CE
Fig. 12 - Turn-Off SOA
F
T = 150°C
J
T = 125°C
10
J
T = 25°C
J
Instantaneous Forward Current - I (A)
1
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V (V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRGBC30KD2
160
V = 200V
R
T = 125°C
J
T = 25°C
J
120
I = 24A
F
I = 12A
F
80
rr
t - (ns)
40
0
100 1000
di /dt - (A/µs)
f
I = 6.0A
F
Fig. 14 - Typical Reverse Recovery vs. dif/dt
600
V = 200V
R
T = 125°C
J
T = 25°C
J
100
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 24A
F
I = 12A
10
IRRM
I - (A)
I = 6.0A
F
1
100 1000
F
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
V = 200V
R
T = 125°C
J
T = 25° C
J
1000
RR
400
I = 24A
F
Q - (nC)
I = 12A
200
I = 6.0A
F
0
100 1000
F
di /dt - (A/µs)
f
100
di(rec)M/dt - (A/µs)
I = 24A
F
10
100 1000
di /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di
I = 6.0A
F
f
(rec)M
I = 12A
F
/dt vs. dif/dt
Page 8
IRGBC30KD2
90% Vge
+Vge
Same type
device as
D.U.T.
80%
of Vce
430µF
D.U.T.
Fig. 18a - Test Circuit for Measurement of
I
LM
Vcc
, Eon, E
10% +Vg
10% Ic
, trr, Qrr, Irr, t
off(diode)
Vce
5% Vce
trtd(on)
t1 t2
d(on)
GATE VOLTAGE D.U.T.
+Vg
90% Ic
, tr, t
d(off)
DUT VOLTAGE
AND CURRENT
Ipk
t2
Vce ie dt
Eon =
∫
t1
Vce
10% Vce
Ic
td(off)
, t
f
t1
90% Ic
Ic
5% Ic
tf
Eoff =
∫
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
, t
d(off)
t3
, t
f
trr
Qrr =
∫
10% Irr
DIODE RECOVERY
WAVEFORMS
t4
Erec =
Vd id dt
∫
t3
t4
E
off
Ic
tx
10% Vcc
Vpk
Ic
DIODE REVERSE
RECOVERY ENERGY
Irr
t1+5µS
Vc e ic dt
trr
id dt
tx
Vcc
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
, t
Defining E
on
d(on)
, t
r
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E
, trr, Qrr, I
rec
rr
Page 9
Vg
T
)
GATE SIGNAL
DEVICE UNDER TES
CURRENT D.U.T.
VOLTAGE IN D. U.T.
CURRENT IN D1
IRGBC30KD2
t0 t1
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
L
V *
1000V
50V
6000µF
100V
Fig. 19 - Clamped Inductive Load Test
Circuit
10.54 (.415)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)2.87 (.113)
1 2 3
4
6.47 (.255)
6.10 (.240)
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3 X
c
3.78 (.149)
3.54 (.139)
- A -
3.96 (.160)
3.55 (.140)
D.U.T.
4.69 (.185)
4.20 (.165)
t2
4 X I
480V
@25°C
C
RL=
0 - 480V
Fig. 20 - Pulsed Collector Current
Test Circuit
- B -
1.32 (.052)
1.22 (.048)
NOTES:
1 DIMENSIONS & TOLER ANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS ARE SHOWN
MILLIMETERS (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO-220AB.
LEAD ASSIGNMENTS
1 - GAT E
2 - COL LECTOR
3 - EMITTER
4 - COL LECTOR
1.40 (.055)
3 X
1.15 (.045)
2.54 (.100)
2X
0.93 (.037)
3 X
0.69 (.027)
0.36 (.014) M B A M
3 X
2.92 (.115)
2.64 (.104)
CO NF ORMS TO JE DEC OUTLINE TO-220AB
Dimensions in Millimeters and (Inches
0.55 (.022)
0.46 (.018)
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