Page 1
PD - 9.794
TO-220AB
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IRGBC30FD2
INSULATED GATE BIPOLAR TRANSISTOR
Fast CoPack IGBT
WITH ULTRAFAST SOFT RECOVERY
DIODE
Features
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
G
C
V
= 600V
CES
V
CE(sat)
≤ 2.1V
@VGE = 15V, IC = 31A
E
n-chan ne l
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 31
IC @ TC = 100°C Continuous Collector Current 17
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 12
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 120 A
Clamped Inductive Load Current 120
Diode Maximum Forward Current 120
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight — 2 (0.07) — g (oz)
Parameter Min. Typ. Max. Units
Junction-to-Case - IGBT — — 1.2
Junction-to-Case - Diode — — 2.5 °C/W
Case-to-Sink, flat, greased surface — 0.50 —
Junction-to-Ambient, typical socket mount — — 80
Revision 1
C-101
Page 2
IRGBC30FD2
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
V
FM
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
/∆T
Temp. Coeff. of Breakdown Voltage — 0.69 — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 1.8 2.1 IC = 17A VGE = 15V
— 2.4 — V IC = 31A See Fig. 2, 5
— 2.2 — IC = 17A, TJ = 150°C
Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA
/∆TJTemp. Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 6.1 10 — S VCE = 100V, IC = 17A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
— — 2500 VGE = 0V, VCE = 600V, TJ = 150°C
Diode Forward Voltage Drop — 1.4 1.7 V IC = 12A See Fig. 13
— 1.3 1.6 IC = 12A, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Total Gate Charge (turn-on) — 27 30 IC = 17A
Gate - Emitter Charge (turn-on) — 4.1 5.9 nC VCC = 400V
Gate - Collector Charge (turn-on) — 12 15 See Fig. 8
Turn-On Delay Time — 72 — TJ = 25°C
Rise Time — 75 — ns IC = 17A, VCC = 480V
Turn-Off Delay Time — 300 450 VGE = 15V, RG = 23Ω
Fall Time — 220 350 Energy losses include "tail" and
Turn-On Switching Loss — 0.9 — diode reverse recovery.
Turn-Off Switching Loss — 2.1 — mJ See Fig. 9, 10, 11, 18
Total Switching Loss — 3.0 4.6
Turn-On Delay Time — 70 — TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time — 75 — ns IC = 17A, VCC = 480V
Turn-Off Delay Time — 420 — VGE = 15V, RG = 23Ω
Fall Time — 480 — Energy losses include "tail" and
Total Switching Loss — 4.7 — mJ diode reverse recovery.
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 660 — VGE = 0V
Output Capacitance — 100 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 10 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 42 60 ns TJ = 25°C See Fig.
— 80 120 TJ = 125°C 14 IF = 12A
Diode Peak Reverse Recovery Current — 3.5 6.0 A TJ = 25°C See Fig.
— 5.6 10 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C See Fig.
— 220 600 TJ = 125°C 16 di/dt = 200A/µs
/dt Diode Peak Rate of Fall of Recovery — 180 — A/µs TJ = 25°C See Fig.
During t
b
— 120 — TJ = 125°C 17
VCC=80%(V
), VGE=20V, L=10µH,
CES
RG= 23Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-102
Page 3
IRGBC30FD2
A
CE
C
I , Collector-to-Emitter Current (A)
, Collector-to-Em
er Voltage (V)
C
I , Collector-to-Emitter Current (A)
, Gate-to-Em
er Voltage (V)
GE
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20
Du ty c ycl e: 50 %
T = 125°C
J
T = 90°C
16
12
60 % of rated
vo lta ge
8
Load Current (A)
4
0
0.1 1 10 100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
sin k
Ga te drive as spe ci fied
Turn-on losses in clude
effe cts of re verse recove ry
Po we r Dissipatio n = 2 1W
1000
T = 25°C
100
10
1
1 10
V
J
T = 150°C
J
V = 15V
G E
20µ s PULSE W IDTH
itt
Fig. 2 - Typical Output Characteristics
C-103
100 0
100
T = 15 0°C
J
10
T = 25°C
J
1
V = 100V
CC
0.1
5 10 15 2 0
V
5µs PULS E WIDTH
itt
Fig. 3 - Typical Transfer Characteristics
Page 4
IRGBC30FD2
, Case Temperature (°C)
C
CE
V , Collector-to-Em itter Voltage (V)
Maxim um D C C ollector C urrent (A)
, Case Tem perature (°C)
C
t , R ectangular Pulse D ur a tion (sec)
1
thJ C
The rm al Response (Z )
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40
30
20
10
0
25 50 75 100 1 25 1 50
V = 15V
G E
T
Fig. 4 - Maximum Collector Current vs.
Case Temperature
10
3.5
V = 1 5V
G E
80µs PULSE WID TH
3.0
2.5
2.0
1.5
1.0
-6 0 -4 0 -2 0 0 20 40 60 80 100 120 14 0 160
I = 34A
C
I = 17A
C
I = 8.5A
C
T
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
1
D = 0 .5 0
0.2 0
0.1 0
0.1
0.0 5
0.0 2
0.0 1
0.01
0.00 001 0.0001 0.0 01 0.01 0.1 1 10
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
S IN G L E P UL SE
(T HE R M A L R ES PO NS E)
C-104
P
D M
t
1
t
Notes:
1. D u ty factor D = t / t
2. Pea k T = P x Z + T
J
DM
1 2
thJC
2
C
Page 5
IRGBC30FD2
A
CE
C, Capacitance (pF )
, Collector-to-Em
er Voltage (V)
GE
V , Gate-to-E mitter Voltage (V)
, Total Gate Charg e (nC)
g
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1400
1200
1000
800
600
400
200
0
1 10 10 0
V
V = 0V, f = 1MHz
GE
C = C + C , C SHO RTED
ies ge gc ce
C = C
res gc
C = C + C
oes ce gc
C
ies
C
oes
C
res
itt
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
3.10
V = 480V
CC
V = 15V
GE
T = 25°C
C
I = 17A
C
3.06
3.02
20
V = 40 0V
CE
I = 17A
C
16
12
8
4
0
0 5 10 15 20 25 3 0
Q
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
R = 23
V = 15V
V = 480V
10
G
GE
CC
Ω
I = 34A
C
I = 17A
C
I = 8.5A
C
2.98
Total Switching Losses (mJ)
2.94
0 10 20 30 40 50 60
Fig. 9 - Typical Switching Losses vs. Gate
R , Gate Resistance (Ω)
G
Resistance
A
C-105
1
Total Switching Losses (mJ)
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Case Temperature (°C)
C
Fig. 10 - Typical Switching Losses vs.
Case Temperature
Page 6
IRGBC30FD2
A
C
CE
,
I , Collecto r-to -E m itter Current (A )
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12
R = 23
T = 150°C
V = 480V
V = 15V
9
6
3
G
C
CC
GE
Ω
Total Switching Losses (mJ)
0
0 10 20 30 40
I , Collector-to-Emitter Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
1000
V = 20V
G E
GE
T = 125 °C
J
100
S AFE OPE RATIN G A RE A
10
1
1 10 100 1000
V
C ollector-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
F
T = 150°C
J
T = 125°C
10
J
T = 25°C
J
Instantaneous Forward Current - I (A)
1
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V (V)
C-106
FM
Page 7
IRGBC30FD2
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160
V = 20 0V
R
T = 125°C
J
T = 25°C
J
120
I = 24A
F
I = 12A
F
80
rr
t - (ns)
40
0
100 1000
di /dt - (A/µs)
f
I = 6.0A
F
Fig. 14 - Typical Reverse Recovery vs. dif/dt
100
V = 20 0V
R
T = 125°C
J
T = 25°C
J
I = 24A
F
I = 12A
10
IRRM
I - (A)
I = 6.0A
F
1
100 1000
F
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
600
V = 20 0V
R
T = 125°C
J
T = 25°C
J
400
I = 24A
RR
F
10000
1000
V = 200V
R
T = 12 5°C
J
T = 25 °C
J
I = 6.0A
F
Q - (nC)
I = 12A
200
I = 6.0A
F
0
100 1000
F
di /dt - (A/µs)
f
100
di(rec)M/dt - (A/µs)
I = 24A
F
10
100 1000
di /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di
C-107
f
(rec)M
I = 12A
F
/dt vs. dif/dt
Page 8
IRGBC30FD2
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90% Vge
+Vge
Same type
device as
D.U.T.
80%
of Vce
430µF
D.U.T.
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, E
off(diode)
, trr, Qrr, Irr, t
d(on)
, tr, t
d(off)
, t
f
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
GATE VOLTAGE D.U.T.
Vcc
10% +Vg
10% Ic
td(on)
Vce
tr
t1
90% Ic
5% Vce
+Vg
DUT VOLTAGE
AND CURRENT
Ipk
Ic
t2
Vce ie dt
Eon =
∫
t1
t2
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, t
d(on)
, t
r
Vce
10% Vce
Ic
td(off)
t1
E
Ic
tx
10% Vcc
Vpk
DIODE REVERSE
RECOVERY ENERGY
Irr
, t
off
d(off)
t3
90% Ic
Ic
5% Ic
tf
t1+5µS
Vce ic dt
Eoff =
∫
t1
t2
, t
f
trr
10% Irr
DIODE RECOVERY
WAVEFORMS
Erec =
t4
Qrr =
∫
∫
tx
t4
Vd id dt
t3
trr
id dt
Vcc
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E
, trr, Qrr, I
rec
rr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12
Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
C-108
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