Datasheet IRGBC30F Datasheet (International Rectifier)

PD - 9.689A

TO-220AB

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IRGBC30F

Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve

G

C

V

= 600V

CES

V

E

@VGE = 15V, IC = 17A

CE(sat)

≤ 2.1V

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 31
IC @ TC = 100°C Continuous Collector Current 17 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 120
Clamped Inductive Load Current 120
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 10 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight — 2.0 (0.07) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case — — 1.2
Case-to-Sink, flat, greased surface — 0.50 — °C/W
Junction-to-Ambient, typical socket mount — — 80

C-57

IRGBC30F

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.69 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.8 2.1 IC = 17A VGE = 15V

— 2.4 — V IC = 31A See Fig. 2, 5
— 2.2 — IC = 17A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 6.1 10 — S VCE = 100V, IC = 17A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 27 30 IC = 17A
Gate - Emitter Charge (turn-on) — 4.1 5.9 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 12 15 VGE = 15V
Turn-On Delay Time — 25 — TJ = 25°C
Rise Time — 21 — ns IC = 17A, VCC = 480V
Turn-Off Delay Time — 210 320 VGE = 15V, RG = 23Ω
Fall Time — 300 500 Energy losses include "tail"
Turn-On Switching Loss — 0.30 —
Turn-Off Switching Loss — 2.1 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 2.4 3.5
Turn-On Delay Time — 25 — TJ = 150°C,
Rise Time — 21 — ns IC = 17A, VCC = 480V
Turn-Off Delay Time — 290 — VGE = 15V, RG = 23Ω
Fall Time — 590 — Energy losses include "tail"
Total Switching Loss — 3.6 — mJ See Fig. 10, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 670 — VGE = 0V
Output Capacitance — 100 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 10 — ƒ = 1.0MHz

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 23Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-58

Pulse width 5.0µs,

single shot.

IRGBC30F

LOAD CURRENT (A)

f, Frequency (kHz)

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltag e (V)

C

I , Collector-to-Emitter Current (A)

, Gate-to-Em

er Voltage (V)

GE

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40

30

Squ a re w a ve:

20

10

0

0.1 1 10 100

60% of rate d
voltage

Idea l diodes

For both:

Duty cycle: 50%
T = 1 2 5 °C

J

T = 90°C

sink

Gate drive as specifie d

Power Dissipation = 21W

Triangula r w a ve:

Clamp volta g e:
80 % of ra ted

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

1000

of fundamental; for triangular wave, I=IPK)

RMS

1000

100

10

1

1 10

V

Fig. 2 - Typical Output Characteristics

T = 25°C

J

T = 150°C

J

V = 15V

G E

20µs PU LS E WIDTH

itt

C-59

100

T = 150°C

J

10

T = 25°C

J

1

V = 100 V

CC

0.1
5 10 15 2 0

V

5µs P UL SE WIDTH

itt

Fig. 3 - Typical Transfer Characteristics

Revision 0

IRGBC30F

Maximum DC Collector Current (A)

, Case Temperature (°C)

C

, Case Temperature (°C)

C

CE

V , Collector-to-Emitter Voltage (V)

t , Re ctangular Pulse D ura tion ( sec)

1

thJC

The rm al Re sponse (Z )

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40

30

20

10

0

25 50 75 100 125 150

V = 15V

G E

T

Fig. 4 - Maximum Collector Current vs.

Case Temperature

10

3.5

V = 15V

G E

80 µs P ULSE WIDTH

3.0

2.5

2.0

1.5

1.0

-6 0 -4 0 -2 0 0 2 0 40 60 80 100 120 140 160

I = 34A

C

I = 17A

C

I = 8.5A

C

T

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

1

D = 0 .50

0.20

0.10

0.1

0.05

0.02

0.01

0.0 1

0.00001 0.0 0 01 0.0 0 1 0.01 0 .1 1 10

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S ING L E PULSE
(T H ER MA L RES P O NS E)

C-60

P

D M

t

1

t

Note s :

1. Duty facto r D = t / t

2. Peak T = P x Z + T

J

DM

1 2

thJC

2

C

IRGBC30F

CE

C, C apacitance (pF)

, Collector-to-Em

er Voltage (V)

GE

V , Gate-to-Em itter Voltage (V)

, Total Gate Charge (nC)

g

Total Switching Losses (m J)

W

, Case Temperature (°C)

Total S witching Losses (m J)

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1400

1200

1000

800

600

400

200

0

1 10 10 0

V

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

itt

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

2.7

V = 480V

CC

V = 15V

G E

T = 25 °C

C

2.6

I = 17A

C

20

V = 400V

CE

I = 17A

C

16

12

8

4

0

0 5 10 15 20 25 30

Q

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

I = 34A

C

2.5

2.4

2.3

2.2
0 10 20 30 40 50 60

Fig. 9 - Typical Switching Losses vs. Gate

R , Gate Resista nce ( )

G

Ω

Resistance

C-61

I = 1 7A

C

I = 8.5A

C

R = 23

G

V = 15V

GE

V = 480V

1

-60 -4 0 -20 0 20 40 60 80 10 0 120 140 160

T

C

CC

Fig. 10 - Typical Switching Losses vs.

Case Temperature

Ω

IRGBC30F

Total Switching Losses (mJ)

, Collector-to-Emitter Current (A)

C

CE

,

I , Collector-to-Emitter Current (A)

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10

R = 2 3
T = 150°C
V = 480V
V = 15V

8

6

4

2

0 10 20 30 40

G
C
CC
G E

Ω

I

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V = 20V

GE

GE

T = 125°C

J

100

S AFE O PERATING A REA

10

1

1 10 100 1 0 0 0

V

Col lector-to-Em itter Vol tage (V)

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix C: Section D - page D-5

Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

C-62