Datasheet IRGBC20F Datasheet (International Rectifier)

PD - 9.686A

TO-220AB

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IRGBC20F

Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency ( 1 to

C

V

= 600V

CES

10kHz) See Fig. 1 for Current vs. Frequency curve

G

V

E

@VGE = 15V, IC = 9.0A

CE(sat)

≤ 2.8V

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high­current applications.

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 64
Clamped Inductive Load Current 64
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 5.0 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight — 2.0 (0.07) — g (oz)

Parameter Min. Typ. Max. Units
Junction-to-Case — — 2.1
Case-to-Sink, flat, greased surface — 0.50 — °C/W
Junction-to-Ambient, typical socket mount — — 80

Revision 0

C-51

IRGBC20F

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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A

/∆T

Temp. Coeff. of Breakdown Voltage — 0.72 — V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.0 2.8 IC = 9.0A VGE = 15V

— 2.6 — V IC = 16A See Fig. 2, 5
— 2.3 — IC = 9.0A, TJ = 150°C

Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA

/∆TJTemp. Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance 2.9 5.1 — S VCE = 100V, IC = 9.0A
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V

— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Total Gate Charge (turn-on) — 16 21 IC = 9.0A
Gate - Emitter Charge (turn-on) — 2.4 3.4 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 7.8 10 VGE = 15V
Turn-On Delay Time — 24 — TJ = 25°C
Rise Time — 13 — ns IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 160 270 VGE = 15V, RG = 50Ω
Fall Time — 310 600 Energy losses include "tail"
Turn-On Switching Loss — 0.18 —
Turn-Off Switching Loss — 0.90 — mJ See Fig. 9, 10, 11, 14
Total Switching Loss — 1.08 2.0
Turn-On Delay Time — 25 — TJ = 150°C,
Rise Time — 18 — ns IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 210 — VGE = 15V, RG = 50Ω
Fall Time — 600 — Energy losses include "tail"
Total Switching Loss — 1.65 — mJ See Fig. 10, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 340 — VGE = 0V
Output Capacitance — 63 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 5.9 — ƒ = 1.0MHz

Notes:

Repetitive rating; VGE=20V, pulse width

limited by max. junction temperature.
( See fig. 13b )

VCC=80%(V

RG= 50Ω, ( See fig. 13a )

), VGE=20V, L=10µH,

CES

Repetitive rating; pulse width limited

by maximum junction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

C-52

Pulse width 5.0µs,

single shot.

20

LOAD CURRENT (A)

f, Frequency (kHz)

C

I , Collector-to-Emitter Current (A)

,

GE

CE

C

I , Collector-to-Emitter Current (A)

, Collector-to-Em

er Voltage (V)

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16

12

8

Square wave:

60% of rated
voltage

Fo r both:

Duty cycle: 5 0%
T = 12 5 °C

J

T = 90°C

sink
Gate d rive a s spe cified
Power Dissipation = 13W

IRGBC20F

Triangular wave:

Clamp voltage:
80% o f rated

4

0

0.1 1 10 100

Ideal diodes

Fig. 1 - Typical Load Current vs. Frequency

100

(For square wave, I=I

T = 25°C

J

10

1

of fundamental; for triangular wave, I=IPK)

RMS

100

T = 150 °C

J

10

T = 25°C

J

T = 150°C

J

0.1

0.1 1 10

V

Fig. 2 - Typical Output Characteristics

V = 15 V

G E

20µs PULSE WIDTH

itt

C-53

V = 100 V

CC

1

5 10 15 20

V

Gate-to-Em itter Vo ltage (V)

5µs PULSE WID TH

Fig. 3 - Typical Transfer Characteristics

IRGBC20F

Maximum DC Collector Current (A)

, Case Temperature (°C)

C

, Case Temperature (°C)

C

CE

V , Collector-to-Emitter Voltage (V)

t , Rectan gula r P ulse Dura tion ( sec)

1

thJC

Thermal R esponse (Z )

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16

12

8

4

0

25 50 75 100 125 150

V = 15 V

G E

T

Fig. 4 - Maximum Collector Current vs.

Case Temperature

10

4.0

V = 15V

G E

80µs P ULSE W IDTH

3.5

3.0

2.5

2.0

1.5

1.0

-6 0 -4 0 -2 0 0 2 0 40 60 80 100 120 140 160

I = 18A

C

I = 9.0 A

C

I = 4.5A

C

T

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

D = 0.50

1

0.1

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

0.20

0.10

0.05

0.02

0.01

SIN G LE PU L S E
(T HERMAL RES P O N S E)

Notes:

1. D uty fac tor D = t / t

2. P eak T = P x Z + T

DM

J

1 2

thJC

P

D M

C

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

C-54

t

1

t

2

IRGBC20F

GE

V , Gate-to-Emitter Voltage (V)

, Total Gate Charge (nC)

g

Total Switching Losses (mJ)

W

, Case Temperature (°C)

Total Switching Losses (m J)

CE

C, C apacitance (pF)

, Collector-to-Em

er Voltage (V)

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700

600

500

400

300

200

100

0

1 10 10 0

V

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

itt

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

1.36

V = 480V

CC

V = 15V

G E

T = 25°C

C

1.34

I = 9.0A

C

20

V = 400V

CE

I = 9.0A

C

16

12

8

4

0

0 4 8 12 16 2 0

Q

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 50
V = 15V
V = 480V

G
GE
CC

Ω

I = 1 8A

C

1.32

1.30

1.28

1.26

1.24
20 30 4 0 50 60

Fig. 9 - Typical Switching Losses vs. Gate

R , Gate Resistance ( )

G

Resistance

I = 9.0A

C

1

0.1

-6 0 -40 -20 0 20 40 60 80 100 120 140 160

Ω

T

C

I = 4.5 A

C

Fig. 10 - Typical Switching Losses vs.

Case Temperature

C-55

IRGBC20F

Total Switching Losses (mJ)

, Collector-to-Em

er Current (A)

C

CE

,

I , Collector-to-Emitter Current (A)

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4.0

R = 50
T = 150°C
V = 480V
V = 15V

3.0

2.0

1.0

0.0
4 8 12 16 20

G
C
CC
G E

Ω

I

C

itt

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

V = 20V

G E

GE

T = 125°C

J

S A FE O P ERATING AR E A

10

1

1 10 100 1000

V

Collec tor-to-Emitter Voltage (V)

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix C: Section D - page D-5

Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12

Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform

C-56