Datasheet IRGB6B60KDPBF Specification

INSULATED GATE BIPOLAR TRANSISTOR WITH

G

ULTRAFAST SOFT RECOVERY DIODE

C

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

• TO-220 is available in PbF as a Lead-Free

n-channel

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

TO-220AB

IRGB6B60KDPbF

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 13 IC @ TC = 100°C Continuous Collector Current 7.0 I

CM

I

LM

IF @ TC = 25°C Diode Continuous Forward Current 13 IF @ TC = 100°C Diode Continuous Forward Current 7.0 I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 90 PD @ TC = 100°C Maximum Power Dissipation 36 T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current 26 Clamped Inductive Load Current 26 A

Diode Maximum Forward Current 26 Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Thermal Resistance

E

IRGS6B60KD

PD - 95229

IRGB6B60KDPbF

IRGS6B60KD

IRGSL6B60KD

V

= 600V

CES

IC = 7.0A, TC=100°C tsc > 10µs, TJ=150°C V

D2Pak

CE(on)

typ. = 1.8V

TO-262

IRGSL6B60KD

W

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

R

θJA

Wt Weight ––– 1.44 ––– g

Junction-to-Case - IGBT ––– ––– 1.4 Junction-to-Case - Diode ––– ––– 4.4 Case-to-Sink, flat, greased surface ––– 0.50 ––– °C/W Junction-to-Ambient, typical socket mount ––– ––– 62 Junction-to-Ambient (PCB Mount, steady state) ––– ––– 40

www.irf.com 1

09/16/04

IRGB6B60KDPbF/IRGS/SL6B60KD

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

V

FM

Collector-to-Emitter Breakdown Voltage 6 0 0 ––– ––– V VGE = 0V, IC = 500µA

/∆T

Temperature Coeff. of Breakdown Voltage ––– 0.3 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C)

J

Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 V IC = 5.0A, VGE = 15V

––– 2.20 2.50 I

= 5.0A,VGE = 15V, TJ = 150°C

C

Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage – – – -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)

Forward Transconductance ––– 3.0 ––– S VCE = 50V, IC = 5.0A, PW=80µs Zero Gate Voltage Collector Current ––– 1.0 150 µA VGE = 0V, VCE = 600V

––– 200 500 V

= 0V, VCE = 600V, TJ = 150°C

GE

Diode Forward Voltage Drop ––– 1.25 1.45 IC = 5.0A

––– 1.20 1.40 V IC = 5.0A TJ = 150°C

I

GES

Gate-to-Emitter Leakage Current ––– –– – ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Qg Total Gate Charge (turn-on) – – – 18.2 ––– IC = 5.0A Qge Gate - Emitter Charge (turn-on) ––– 1. 9 ––– nC VCC = 400V Qgc Gate - Collector Charge (turn-on) ––– 9.2 ––– VGE = 15V E

on

E

off

E

tot

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

tot

t

d(on)

t

r

t

d(off)

t

f

C

ies

C

oes

C

res

RBSOA Reverse Bias Safe Operting Area FULL SQUARE

SCSOA Short Circuit Safe Operting Area 10 ––– –––

Turn-On Switching Loss ––– 110 210 µJ IC = 5.0A, VCC = 400V Turn-Off Switching Loss ––– 135 24 5 VGE = 15V,RG = 100Ω, L =1.4mH Total Switching Loss ––– 245 455 Ls = 150nH TJ = 25°C  Turn-On Delay Time ––– 25 34 IC = 5.0A, VCC = 400V Rise Time ––– 17 26 VGE = 15V, RG = 100Ω L =1.4mH Turn-Off Delay Time ––– 21 5 230 ns Ls = 150nH, TJ = 25°C Fall Time ––– 13.2 22 Turn-On Switching Loss ––– 150 260 IC = 5.0A, VCC = 400V Turn-Off Switching Loss ––– 190 30 0 µJ VGE = 15V,RG = 100Ω, L =1.4mH Total Switching Loss ––– 340 560 Ls = 150nH TJ = 150°C  Turn-On Delay Time ––– 28 37 IC = 5.0A, VCC = 400V Rise Time ––– 17 26 VGE = 15V, RG = 100Ω L =1.4mH Turn-Off Delay Time ––– 24 0 255 ns Ls = 150nH, TJ = 150°C Fall Time ––– 18 27 Input Capacitance ––– 290 ––– VGE = 0V Output Capacitance ––– 34 ––– pF VCC = 30V Reverse Transfer Capacitance ––– 10 – –– f = 1.0MHz

TJ = 150°C, IC = 26A, Vp =600V VCC = 500V, VGE = +15V to 0V,

RG = 100Ω

µs TJ = 150°C, Vp =600V, RG = 100Ω

VCC = 360V, VGE = +15V to 0V Erec Reverse Recovery energy of the diode ––– 90 175 µJ TJ = 150°C t

rr

I

rr

Diode Reverse Recovery time ––– 70 80 ns VCC = 400V, IF = 5.0A, L = 1.4mH Diode Peak Reverse Recovery Current ––– 10 14 A VGE = 15V,RG = 100Ω, Ls = 150nH

Note:  to  are on page 15

2 www.irf.com

Ref.Fig.

5, 6,7 9,10,11 9,10,11 12

8

Ref.Fig.

CT1

CT4

13,15

WF1WF2

14, 16

CT4 WF1 WF2

4 CT2 CT3

WF4

17,18,19

20, 21

CT4,WF3

IRGB6B60KDPbF/IRGS/SL6B60KD

15

10

) A

(

C

I

5

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

100

90 80 70 60

) W

(

50

t

o

t

P

40 30 20 10

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

100

10

) A

(

C

I

1

DC

0.1 1 10 100 1000 10000

V

(V)

CE

10 µs

100 µs

1ms

Fig. 3 - Forward SOA

TC = 25°C; T

≤ 150°C

J

10

) A

C

I

1

0

10 100 1000

V

(V)

CE

Fig. 4 - Reverse Bias SOA

TJ = 150°C; V

GE

=15V

www.irf.com 3

IRGB6B60KDPbF/IRGS/SL6B60KD

20 18

VGE = 18V VGE = 15V

16

VGE = 12V

14

VGE = 10V VGE = 8.0V

12

) A

(

10

E C

I

8 6 4 2 0

0123456

V

(V)

CE

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

20 18

VGE = 18V VGE = 15V

16

VGE = 12V

14

VGE = 10V VGE = 8.0V

12

) A

(

10

E C

I

8 6 4 2 0

0123456

V

(V)

CE

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

20 18

VGE = 18V VGE = 15V

16

VGE = 12V

14

VGE = 10V VGE = 8.0V

12

) A

(

10

E C

I

8 6 4 2 0

0123456

V

(V)

CE

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 150°C; tp = 80µs

30

25

20

) A

(

15

F

I

10

5

0

0.0 0.5 1.0 1.5 2.0

-40°C 25°C 150°C

VF (V)

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80µs

4 www.irf.com

IRGB6B60KDPbF/IRGS/SL6B60KD

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5 101520

V

Fig. 9 - Typical V

GE

ICE = 3.0A I

CE

I

CE

(V)

vs. V

CE

= 5.0A = 10A

GE

TJ = -40°C

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5101520

V

Fig. 10 - Typical V

GE

(V)

CE

ICE = 3.0A I

CE

I

CE

vs. V

GE

= 5.0A = 10A

TJ = 25°C

20 18 16 14 12

) V

(

10

E C

V

8 6 4 2 0

5101520

V

Fig. 11 - Typical V

GE

ICE = 3.0A I

CE

I

CE

(V)

CE

= 5.0A = 10A

vs. V

GE

TJ = 150°C

40 35

TJ = 25°C TJ = 150°C

30 25

) A

(

20

E C

I

15 10

TJ = 150°C

5

TJ = 25°C

0

0 5 10 15 20

V

(V)

GE

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10µs

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IRGB6B60KDPbF/IRGS/SL6B60KD

700

600

500

)

J

µ

400

(

y

g

r

e

300

n E

200

100

0

0 5 10 15 20

E

ON

IC (A)

Fig. 13 - Typ. Energy Loss vs. I

TJ = 150°C; L=1.4mH; VCE= 400V

RG= 100Ω; VGE= 15V

250

E

OFF

1000

td

OFF

)

s

100

n

( e m

i T

g

n

i

h

c

i w S

C

t

F

td

ON

t

10

R

1

0 5 10 15 20

IC (A)

Fig. 14 - Typ. Switching Time vs. I

C

TJ = 150°C; L=1.4mH; VCE= 400V

RG= 100Ω; VGE= 15V

1000

td

t

R

t

F

OFF

ON

G

E

200

)

150

J

µ

( y

g

r

e

n

100

E

50

0

0 50 100 150 200

OFF

RG (Ω)

E

ON

Fig. 15 - Typ. Energy Loss vs. R TJ = 150°C; L=1.4mH; VCE= 400V

ICE= 5.0A; VGE= 15V

)

s

100

n

( e m

i T

g

n

i

h

c

i w

10

S

1

0 50 100 150 200

RG (Ω)

G

Fig. 16 - Typ. Switching Time vs. R

TJ = 150°C; L=1.4mH; VCE= 400V

ICE= 5.0A; VGE= 15V

6 www.irf.com

IRGB6B60KDPbF/IRGS/SL6B60KD

25

R

22

IF (A)

R

G =

47

100

150

RR

20

15

) A

(

R R

I

10

5

0

0 5 10 15 20

Fig. 17 - Typical Diode I

TJ = 150°C

20

Ω

vs. I

20

16

12

) A

(

R R

I

8

4

0

0 50 100 150 200

RG (

Ω)

F

Fig. 18 - Typical Diode I

RR

vs. R

G

TJ = 150°C; IF = 5.0A

1200

22

16

12

) A

(

R R

I

8

4

0

0 200 400 600 800 1000

diF /dt (A/µs)

Fig. 19- Typical Diode I

vs. diF/dt

RR

VCC= 400V; VGE= 15V;

1000

47

800

) C

µ

(

600

R R

Q

400

200

0

0 200 400 600 800 1000

150

100

Ω

diF /dt (A/µs)

Ω

Fig. 20 - Typical Diode Q

VCC= 400V; VGE= 15V;TJ = 150°C

Ω

10A

5.0A

3.0A

RR

ICE= 5.0A; TJ = 150°C

www.irf.com 7

IRGB6B60KDPbF/IRGS/SL6B60KD

300

22

Ω

250

)

200

J

µ

( y

g

r

e

n

150

E

100

50

0 5 10 15

IF (A)

47

100

150

Ω

Fig. 21 - Typical Diode E

1000

Cies

)

100

F

p

( e

c

n

a

t

i

c

a

p

a

10

C

1

1 10 100

V

CE

Coes

Cres

(V)

TJ = 150°C

vs. I

) V

( V

RR

E G

F

16 14 12 10

8 6 4 2 0

0 5 10 15 20

Q G, Total Gate Charge (nC)

300V

400V

Fig. 22- Typ. Capacitance vs. V

VGE= 0V; f = 1MHz

CE

Fig. 23 - Typical Gate Charge vs. V

I

= 5.0A; L = 600µH

CE

GE

8 www.irf.com

IRGB6B60KDPbF/IRGS/SL6B60KD

τ

C

τ

C

10

)

C

1

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

0.001

D = 0.50

0.1

0.01

0.20

0.10

0.05

0.01

0.02

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

Ci= τi/Ri

R

1

R

1

τ

1

R

2

3

R

2

τ

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

0.708 0.00022

τ

3

0.447 0.00089

τ

3

0.219 0.01037

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthj c + Tc

1E-6 1E-5 1E-4 1E-3 1E-2 1E-1

t1 , Rectangular Pulse Duration (sec)

Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

0.1

0.01

1

D = 0.50

0.20

0.10

0.05

0.01

0.02

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

R

1

R

2

3

R

2

τ

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

1.194 0.000172

τ

3

2.424 0.001517

τ

3

0.753 0.080325

Notes:

)

C

J

h

t

Z (

e

s

n

o

p

s

e R

l

a m

r

e

h T

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthj c + Tc

0.001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

t1 , Rectangular Pulse Durat ion (sec)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

www.irf.com 9

IRGB6B60KDPbF/IRGS/SL6B60KD

L

0

DUT

1K

VCC

80 V

+

-

Rg

DUT

480V

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Driver

DC

360V

DUT

Fig.C.T.2 - RBSOA Circuit

diode clamp /

DUT

- 5V

Rg

L

DUT /

DRIVER

VCC

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

V

CC

R =

I

CM

DUT

Rg

VCC

Fig.C.T.5 - Resistive Load Circuit

10 www.irf.com

IRGB6B60KDPbF/IRGS/SL6B60KD

450

9

90% test current

tr

RRQRR

V

CE

400 350

90% I

300

CE

250

(V)

200

CE

V

150 100

tf

5% V

CE

5% I

CE

50

0

-50

Eoff Loss

-0.20 0.30 0.80

time(µs)

Fig. WF1- Typ. Turn-off Loss Waveform

@ TJ = 150°C using Fig. CT.4

50

500

25

8

(V)

CE

V

400

300

200

100

TEST CURRENT

10% test curr ent

5% V

7 6 5 4

(A)

CE

I

3 2 1

0

-1

-100

Eon Los s

20

15

10

(A)

CE

I

5

CE

0

-5

16.00 16.10 16.20 16.30 16.40

time (µs)

Fig. WF2- Typ. Turn-on Loss Waveform

@ TJ = 150°C using Fig. CT.4

8

500

50

0

-50 t

-100

-150

-200

(V)

F

V

-250

-300

Peak

I

RR

10%

Peak

IRR

-350

-400

-450

-0.06 0.04 0.14 0.24

time (µS)

Fig. WF3- Typ. Diode Recovery Waveform

@ TJ = 150°C using Fig. CT.4

6 4 2 0

-2

-4

-6

-8

-10

-12

(A)

F

I

400

300

(V)

CE

V

200

100

0

-5.00 0.00 5.00 10.00 15.00

I

time (µS)

Fig. WF4- Typ. S.C Waveform @ TJ = 150°C using Fig. CT.3

40

30

20

10

0

www.irf.com 11

(A)

CE

I

IRGB6B60KDPbF/IRGS/SL6B60KD

K

R

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

10.29 (.405)

4

1 2 3

3X

3.78 (.149)

3.54 (.139)

- A -

6.47 (.255)

6.10 (.240)

1.15 (.045) MIN

4.06 (.160)

3.55 (.140)

0.93 (.03 7)

0.69 (.02 7)

0.36 (.014) M B A M

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

HEXFET 1- GATE

2- DRAIN 3- SOURCE 4- DRAIN

3X

LEAD ASSIGNMENTS

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

0.55 (.022)

0.46 (.018)

IGBTs, CoPAC 1- GATE

2- COLLECTOR 3- EMITT ER 4- COLLECTOR

TO-220AB Part Marking Information

EXAMPLE:

12 www.irf.com

THIS IS AN IRF 1010 L OT CODE 1789

ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C"

Note: "P" in assembly line position indicates "Lead-Free"

INTER NATIONAL

RECT IFIER

LOGO

ASSEMBLY LOT CODE

PART NUMBE

DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C

IRGB6B60KDPbF/IRGS/SL6B60KD

R

D2Pak Package Outline

Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

THIS IS AN IRF530S WITH LOT CODE 8024

ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L"

Note: "P" in assembly line

position indicates "L ead-F ree"

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLY LOT CODE

F530S

PART NUMBE

DATE CODE YEAR 0 = 2000 WE E K 02 LIN E L

OR

INTE RNAT IONAL

RE CTIFIER

LOGO

ASSEMBLY LOT CODE

F530S

www.irf.com 13

PART NUMBER

DATE CODE P = DE S IGNAT ES L E AD-F RE E

PR ODUCT (OPT IONAL)

YEAR 0 = 2000 WEE K 02

A = AS S E MB L Y SI T E CODE

IRGB6B60KDPbF/IRGS/SL6B60KD

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

EXAMPLE:

THIS IS AN IRL3103L LOT CODE 1789 ASSEMB L E D ON WW 19, 1997 IN THE ASS EMBLY LINE "C"

Note: "P" in assembly line position indicates "Lead -Free"

INTE RNAT IONAL

RE CTIF IE R

LOGO

ASSEMBLY LOT C ODE

PART NUMBER

DA TE CODE YEAR 7 = 1997 WEEK 19 LINE C

OR

INTERNATIONAL

RECTIFIER

LOGO

ASS E MB LY LOT CODE

14 www.irf.com

PART NUMBER

DATE CODE P = D E S IGN AT E S LE AD -F R E E

PRODUCT (OPTIONAL)

YEAR 7 = 1997 WEE K 19

A = AS S EMB L Y S IT E CODE

IRGB6B60KDPbF/IRGS/SL6B60KD

TRR

F

) )

)

D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

EED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

11.60 ( . 4 57)

11.40 ( . 4 49)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957

23.90 (.941

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTRO LLING DIMENSION: MILLIMETER.

3. DIMEN SION MEA S URED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961)

3

60.00 (2.362 MIN.

30.40 (1.197) MAX.

4

Notes:

This is only applied to TO-220AB package

  This is applied to D

2

Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

 Energy losses include "tail" and diode reverse recovery.  V

= 80% (V

CC

TO-220 package is not recommended for Surface Mount Application

), VGE = 20V, L = 100 µH, RG = 100Ω.

CES

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 09/04

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