Datasheet irgb4b60k Datasheet

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

PD - 94633

IRGB4B60K
IRGS4B60K

IRGSL4B60K

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Positive VCE (on) Temperature Coefficient.

• Maximum Junction Temperature rated at 175°C.

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

G

n-channel

TO-220

IRGB4B60K

C

E

V

CES

I

= 6.8A, TC=100°C

C

> 10µs, TJ=150°C

t

sc

V

CE(on)

D2Pak

IRGS4B60K

= 600V

typ. = 2.1V

TO-262

IRGSL4B60K

Absolute Maximum Ratings

Parameter Max. Units

V

CES

I

@ TC = 25°C Continuous Collector Current 12

C

I

@ TC = 100°C Continuous Collector Current 6.8 A

C

I

CM

I

LM

V

GE

P

@ TC = 25°C Maximum Power Dissipation 63 W

D

P

@ TC = 100°C Maximum Power Dissipation 31

D

T

J

T

STG

Collector-to-Emitt er Voltage 600 V

Pulse Collector Current (Ref.Fig.C.T.5) 24
Clamped Inductive Load current

Gate-to-Emitter Voltage ±20 V

Operating Junction and -55 to +175
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from cas e)

c

24

Thermal / Mechanical Characteristics

Parameter Min. Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

Wt Weight ––– 1.44 ––– g

Junction-to-Case- IGBT ––– ––– 2.4 °C/W
Case-to-Sink, flat, greased surface ––– 0.50 –––
Junction-to-Ambient ––– ––– 62
Junction-to-Ambient (PCB Mount, steady stat e)

d

––– ––– 40

www.irf.com 1

3/4/03

IRGB/S/SL4B60K

C

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig.

V

(BR)CES

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

gfe Forward Transconductance — 1.7 — S

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

E

on

E

off

E

tot

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

tot

t

d(on)

t

r

t

d(off)

t

f

C

ies

C

oes

C

res

RBSOA Reverse Bias Safe Operating Area FULL SQUARE

SCSOA Short Circuit Safe Operating Area 10 — — µs

Collector-to-Emitter Breakdown Voltage 600 — — V

/∆T

Temperature Coeff. of Breakdown Voltage —0.28—V/°C

J

—2.12.5

Collector-to-Emitt er Voltage — 2.5 2.8 V

—2.62.8

Gate Threshold Voltage 3.5 4.5 5.5 V

/∆T

Threshold Voltage temp. coef f i cient — -8.1 — mV/°

J

— 1.0 150

Zero Gate Voltage Collector Current — 54 300 µA

— 300 800

Gate-to-Emitter Leakage Current — — ±100 nA

Parameter Min. Typ. Max. Units Conditions Ref.Fig.

Total Gate Charge (turn-on) — 12 —
Gate-to-Emitter Charge (turn-on) — 1.7 — nC
Gate-to-Collector Charge (turn-on) — 6.5 —
Turn-On Switching Loss — 73 80
Turn-Off Switching Loss — 47 53 µJ
Total Switching Loss — 120 130
Turn-On delay time — 22 28
Rise time — 18 23 ns
Turn-Off delay time — 100 110
Fall time — 66 80
Turn-On Switching Loss — 130 150
Turn-Off Switching Loss — 83 140 µJ
Total Switching Loss — 220 280
Turn-On delay time — 22 27
Rise time — 18 22 ns
Turn-Off delay time — 120 130
Fall time — 79 89 WF2
Input Capacitance — 190 —
Output Capacitance — 25 — pF
Reverse Transfer Capacitance — 6.2 — f = 1.0MHz

= 0V, IC = 500µA

V

GE

V

= 0V, IC = 1mA (25°C-150°C)

GE

= 4.0A, VGE = 15V, TJ = 25°C

I

C

= 4.0A, VGE = 15V, TJ = 150°C

I

C

I

= 4.0A, VGE = 15V, TJ = 175°C

C

V

= VGE, IC = 250µA

CE

VCE = VGE, IC = 1mA (25°C-150°C)
V

= 50V, IC = 4.0A, PW = 80µs

CE

= 0V, VCE = 600V

V

GE

V

= 0V, VCE = 600V, TJ = 150°C

GE

= 0V, VCE = 600V, TJ = 175°C

V

GE

V

= ±20V

GE

I

= 4.0A

C

V

= 400V

CC

V

= 15V

GE

I

= 4.0A, VCC = 400V

C

V

= 15V, RG = 100Ω, L = 2.5mH

GE

T

= 25°C

J

I

= 4.0A, VCC = 400V

C

V

GE

T

J

I

= 4.0A, VCC = 400V

C

V

GE

T

J

I

= 4.0A, VCC = 400V

C

V

GE

T

J

V

GE

V

CC

T

J

e

= 15V, RG = 100Ω, L = 2.5mH

= 25°C

= 15V, RG = 100Ω, L = 2.5mH

= 150°C

e

= 15V, RG = 100Ω, L = 2.5mH

= 150°C

= 0V
= 30V

= 150°C, IC = 24A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 100Ω
T

= 150°C, Vp = 600V, RG = 100Ω

J

VCC=360V,VGE = +15V to 0V

5,6,7

9,10,11

9,10,11

12

23

CT1

CT4

CT4

CT4

13,15

WF1,WF2

14,16

CT4

WF1

22

4
CT2
CT3

WF3

Note  to  are on page 16

2 www.irf.com

IRGB/S/SL4B60K

12

10

8

)
A

(

6

C

I

4

2

0

0 20 40 60 80 100 120 140 160 180

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

100

70

60

50

)

40

W

(

t

o

t

30

P

20

10

0

0 20 40 60 80 100 120 140 160 180

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

100

10

)
A

(

1

C

I

0.1

0.01
0 1 10 100 1000 10000

V

(V)

CE

Fig. 3 - Forward SOA

TC = 25°C; T

≤ 150°C

J

100µs

1ms
10ms

DC

10

)
A

C

I

1

0

10 100 1000

V

(V)

CE

Fig. 4 - Reverse Bias SOA

TJ = 150°C; V

GE

=15V

www.irf.com 3

IRGB/S/SL4B60K

30

VGE = 18V
VGE = 15V

25

VGE = 12V
VGE = 10V
VGE = 8.0V

20

)
A

(

15

E
C

I

10

5

0

0 2 4 6 8 10 12

V

(V)

CE

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

25

VGE = 18V
VGE = 15V

VGE = 12V

20

VGE = 10V
VGE = 8.0V

15

)
A

(

E
C

I

10

30

VGE = 18V
VGE = 15V

25

VGE = 12V
VGE = 10V
VGE = 8.0V

20

)
A

(

15

E
C

I

10

5

0

0 2 4 6 8 10 12

V

(V)

CE

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

5

0

0 2 4 6 8 10 12

V

(V)

CE

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 150°C; tp = 80µs

4 www.irf.com

IRGB/S/SL4B60K

20
18
16
14
12

)
V

(

10

E
C

V

8
6
4
2
0

5 101520

V

Fig. 8 - Typical V

GE

ICE = 2.0A
I

CE

I

CE

(V)

vs. V

CE

= 4.0A
= 8.0A

GE

TJ = -40°C

20
18
16
14
12

)
V

(

10

E
C

V

8
6
4
2
0

5 101520

V

GE

ICE = 2.0A
I

CE

I

CE

(V)

= 4.0A
= 8.0A

20
18
16
14
12

)
V

(

10

E
C

V

8
6
4
2
0

5 101520

V

Fig. 9 - Typical V

GE

(V)

CE

ICE = 2.0A
I

CE

I

CE

vs. V

= 4.0A
= 8.0A

GE

TJ = 25°C

30

)

25

Α

(

t

n

e

r

r

20

u
C
e

c

r

15

u

o
S

-

o

t

-

10

n

i

a

r
D

,

D

5

I

0

0 5 10 15 20

VGS, Gate-to-Source Voltage (V)

TJ = 25°C

TJ = 150°C

Fig. 10 - Typical V

TJ = 150°C

CE

vs. V

GE

Fig. 11 - Typ. Transfer Characteristics

VCE = 360V; tp = 10µs

www.irf.com 5

IRGB/S/SL4B60K

350

300

E

250

)

J

µ

200

(

y

g

r

e

150

n
E

100

50

0

12345678910

Fig. 12 - Typ. Energy Loss vs. I

ON

IC (A)

E

OFF

C

TJ = 150°C; L=2.5mH; VCE= 400V,

RG= 100Ω; VGE= 15V

350

1000

td

)

s

100

n

(
e
m

i
T

g

n

i

h

c

i

10

w
S

1

0 2 4 6 8 10

OFF

t

F

td

ON

t

R

IC (A)

Fig. 13 - Typ. Switching Time vs. I

TJ = 150°C; L=2.5mH; VCE= 400V

RG= 100Ω; VGE= 15V

1000

C

300

250

)

J

200

µ

(
y

g

r

e

150

n
E

100

50

0

0 100 200 300 400 500

Fig. 14 - Typ. Energy Loss vs. R
TJ = 150°C; L=2.5mH; VCE= 400V

ICE= 4.0A; VGE= 15V

RG (Ω)

E

ON

)

s

n

(

E

OFF

e
m

i
T

g

n

i

h

c

i
w
S

G

td

100

OFF

t

F

td

ON

t

R

10

0 100 200 300 400 500

RG (Ω)

Fig. 15 - Typ. Switching Time vs. R

G

TJ = 150°C; L=2.5mH; VCE= 400V

ICE= 4.0A; VGE= 15V

6 www.irf.com

IRGB/S/SL4B60K

τ

1000

Cies

)

100

F

p

(
e

c

n

a

t

i

c

a

p

a

10

C

1

0 20 40 60 80 100

Coes

Cres

V

CE

(V)

Fig. 16- Typ. Capacitance vs. V

VGE= 0V; f = 1MHz

10

CE

16

14

300V

12

400V

10

)
V

(

8

E
G

V

6

4

2

0

02468101214

Q G, Total Gate Charge (nC)

Fig. 17 - Typical Gate Charge vs. V

I

= 4.0A; L = 3150µH

CE

GE

)

C

J

h

t

Z
(

e

s

n

o

p

s

e
R

l

a
m

r

e

0.01

h
T

0.1

D = 0.50

1

0.20

0.10

0.05

0.02

0.01

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

R

1

R

1

R

2

3

R

2

τ

2

τ

2

Ri (°C/W) τi (sec)

R

3

τ

0.0429 0.000001

C

τ

3

1.3417 0.000178

τ

3

1.0154 0.000627

SINGLE PULSE
( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

www.irf.com 7

IRGB/S/SL4B60K

0

1K

DUT

L

L

VCC

80 V

+

-

DUT

480V

Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Driver

DC

360V

DUT

Fig.C.T.2 - RBSOA Circuit

diode clamp /

DUT

- 5V

Rg

L

DUT /

DRIVER

VCC

Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit

V

CC

R =

I

CM

DUT

Rg

VCC

Fig.C.T.5 - Resistive Load Circuit

8 www.irf.com

IRGB/S/SL4B60K

I (A)

700

tf

600

Vce

500

90% Ice

400

300

Vce (V)

200

100

0

Eoff Loss

-100

0.4 0.6 0.8 1 1.2

Time (uS)

5% Vce

5% Ice

Ice

Fig. WF1- Typ. Turn-off Loss Waveform

@ TJ = 150°C using Fig. CT.4

400

350

14

12

10

8

6

4

2

0

-2

700

600

500

400

Ice (A)

300

Vce (V)

200

100

0

-100

0.35 0.45 0.55 0.65

tr

Vce
Ice

90% Ice

10% Ice
5% Vce

Eon
Loss

Time (uS)

14

12

10

8

6

Ice (A)

4

2

0

-2

Fig. WF2- Typ. Turn-on Loss Waveform

@ TJ = 150°C using Fig. CT.4

Vce

40

35

300

250

30

25

Ice

(V)

200

CE

V

150

100

50

0

-50
30 40 50 60 70

Time (uS)

(A)

20

CE

I

15

10

5

0

-5

Fig. WF3- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3

www.irf.com 9

IRGB/S/SL4B60K

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (. 0 5 5)

3X

1.15 (. 0 4 5)

2.54 (.100)

NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

10.29 (.405)

4

1 2 3

3X

0.36 (.014) M B A M

6.47 (.255)

6.10 (.240)

1.15 (.045)
MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

3X

LEAD ASSIGNMENTS
1 - GATE

LEAD ASSI G NM ENTS
1 - GATE

2 -COLLECTOR

2 - DRAIN

3 EMITTER

3 - SOURCE
4 - DRAIN

4 - COLLECTOR

0.55 (.022)

0.46 (.018)

TO-220AB Part Marking Information

EXAMPLE:

10 www.irf.com

T HI S IS AN IRF 1010

LOT CODE 1789
AS S E MBL ED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"

INTE RNATIONAL

RECT IFIER

LOGO

AS S E MB L Y
LOT CODE

PAR T NUMBER

DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C

D2Pak Package Outline

IRGB/S/SL4B60K

D2Pak Part Marking Information

THIS IS AN IRF530S WITH

LOT CODE 8024
AS S E MBLE D ON WW 02, 2000
IN T HE AS SEMBLY LINE "L"

INTE RNATIONAL

RECTIF IER

LOGO

ASSEMBLY
LOT CODE

F530S

www.irf.com 11

PART NUMBER

DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L

IRGB/S/SL4B60K

TO-262 Package Outline

IGBT

1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR

TO-262 Part Marking Information

E

X

A

M

P

H

E

T

L

S

:

I

I

S

A

R

I

N

3

L

0

1

L

C

T

O

L

D

O

A

S

S

E

M

B

N

I

T

E

H

A

12 www.irf.com

3

7

1

E

9

8

E

L

D

O

N

W

W

1

,

9

9

1

S

S

E

M

B

N

Y

L

I

L

E

"

C

"

I

T

N

E

R

A

N

T

I

N

O

L

7

9

R

E

A

I

E

I

T

C

F

R

O

G

O

L

A

S

S

E

Y

M

B

L

O

L

E

D

O

C

T

P

A

R

T

B

N

E

M

U

R

A

D

T

E

E

D

O

C

E

Y

A

R

7

=

1

9

9

E

W

E

I

L

E

N

7

9

1

K

C

IRGB/S/SL4B60K

D2Pak Tape & Reel Information

TRR

4.10 (.161)

3.90 (.153)

FEED DIRECTION

TRL

FEED DIRECTION

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

330.00

(14.173)
MAX.

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

13.50 (.532)

12.80 (.504)

1.60 (.063)

1.50 (.059)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961)

3

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362)
MIN.

30.40 (1.197)
MAX.

4

Notes:



VCC = 80% (V

), VGE = 15V, L = 100µH, RG = 50Ω.

CES

 When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques

refer to application note #AN-994.

 Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5.

TO-220AB package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial

market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information. 3/03

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