Datasheet irgb20b60pd1 Datasheet

PD - 94613

WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

Applications

• Telecom and Server SMPS

• PFC and ZVS SMPS Circuits

• Uninterruptable Power Supplies

• Consumer Electronics Power Supplies

Features

• NPT Technology, Positive Temperature Coefficient

• Lower VCE(SAT)

• Lower Parasitic Capacitances

• Minimal Tail Current

• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode

• Tighter Distribution of Parameters

• Higher Reliability

Benefits

• Parallel Operation for Higher Current Applications

• Lower Conduction Losses and Switching Losses

• Higher Switching Frequency up to 150kHz

SMPS IGBT

G

n-channel

IRGB20B60PD1

C

E

I

D

V

= 600V

CES

V

@ V

typ. = 2.05V

CE(on)

= 15V IC = 13.0A

GE

Equivalent MOSFET

Parameters 

R

typ. = 158mΩ

CE(on)

(FET equivalent) = 20A

E

C

G

TO-220AB

Absolute Maximum Ratings

Parameter Max. Units

V

CES

I

@ TC = 25°C Continuous Collector Current 40

C

I

@ TC = 100°C

C

I

CM

I

LM

I

@ TC = 25°C Diode Continous Forward Current 10

F

I

@ TC = 100°C

F

I

FRM

V

GE

P

@ TC = 25°C Maximum Power Dissipation 215 W

D

P

@ TC = 100°C

D

T

J

T

STG

Collector-to-Emitter Voltage 600 V

Continuous Collector Current 22

Pulse Collector Current (Ref. Fig. C.T.4) 80 Clamped Inductive Load Current

Diode Continous Forward Current 4 Maximum Repetitive Forward Current

Gate-to-Emitter Voltage ±20 V

Maximum Power Dissipation 86

Operating Junction and -55 to +150

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

d

e

80 A

16

Thermal Resistance

Parameter Min. Typ. Max. Units

R

(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.58 °C/W

θJC

R

θ

R

θCS

R

θ

(Diode)

JC

JA

Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 5.0

Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.032 –––

Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 80

Weight ––– 2 (0.07) ––– g (oz)

1 www.irf.com

02/06/03

IRGB20B60PD1

gy

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig

V

(BR)CES

∆V

(BR)CES

R

G

V

CE(on)

V

GE(th)

∆V

/∆TJ

GE(th)

gfe Forward Transconductance — 19 — S

I

CES

V

FM

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg Total Gate Charge (turn-on) — 68 102

Q

gc

Q

ge

E

on

E

off

E

total

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

total

t

d(on)

t

r

t

d(off)

t

f

C

ies

C

oes

C

res

eff.

C

oes

C

eff. (ER)

oes

RBSOA Reverse Bias Safe Operating Area FULL SQUARE

t

rr

Q

rr

I

rr

Notes:

 R

CE(on)

applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.

 V

= 80% (V

CC

 Pulse width limited by max. junction temperature.  Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.  C

eff. is a fixed capacitance that gives the same charging time as C

oes

C

eff.(ER) is a fixed capacitance that stores the same energy as C

oes

Collector-to-Emitter Breakdown Voltage 600——V

/∆T

Temperature Coeff. of Breakdown Voltage

J

—0.32—V/°C

Internal Gate Resistance — 4.3 — Ω 1MHz, Open Collector

—2.052.35

Collector-to-Emitter Saturation Voltage — 2.50 2.80 V

—2.653.00

—3.303.70

Gate Threshold Voltage 3.0 4.0 5.0 V

Threshold Voltage temp. coefficient — -11 — mV/°C

Collector-to-Emitter Leakage Current — 1.0 250 µA

—0.1—mA

Diode Forward Voltage Drop — 1.5 1.8 V

—1.41.7

Gate-to-Emitter Leakage Current — — ±100 nA

Parameter Min. Typ. Max. Units Ref.Fig

Gate-to-Collector Charge (turn-on) — 24 36 nC

Gate-to-Emitter Charge (turn-on) — 10 15

Turn-On Switching Loss — 95 140

Turn-Off Switching Loss — 100 145 µJ

Total Switching Loss — 195 285

Turn-On delay time — 20 26

Rise time — 5.0 7.0 ns

Turn-Off delay time — 115 135

Fall time — 6.0 8.0

Turn-On Switching Loss — 165 215

Turn-Off Switching Loss — 150 195 µJ

Total Switching Loss — 315 410

Turn-On delay time — 19 25

Rise time — 6.0 8.0 ns

Turn-Off delay time — 125 140

Fall time — 13 17

Input Capacitance — 1560 —

Output Capacitance — 95 —

Reverse Transfer Capacitance — 20 — pF f = 1Mhz

Related)

CE(on)

g

—83—

g

—61—

—3857

—70105

—3.76.7

typ. = 2.05V and IC = 13A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for

while VCE is rising from 0 to 80% V

oes

while VCE is rising from 0 to 80% V

oes

Effective Output Capacitance (Time Related)

Effective Output Capacitance (Ener

Diode Reverse Recovery Time — 28 42 ns

Diode Reverse Recovery Charge — 40 60 nC

Peak Reverse Recovery Current — 2.9 5.2 A

typ. = equivalent on-resistance = V

), VGE = 15V, L = 28µH, RG = 22Ω.

CES

typ. / IC, where V

CE(on)

= 0V, IC = 500µA

V

GE

= 0V, IC = 1mA (25°C-125°C)

V

GE

= 13A, VGE = 15V

I

C

= 20A, VGE = 15V

I

C

= 13A, VGE = 15V, TJ = 125°C

I

C

= 20A, VGE = 15V, TJ = 125°C

I

C

I

= 250µA

C

= VGE, IC = 1.0mA

V

CE

V

= 50V, IC = 40A, PW = 80µs

CE

= 0V, VCE = 600V

V

GE

= 0V, VCE = 600V, TJ = 125°C

V

GE

= 4.0A, VGE = 0V

I

F

I

= 4.0A, VGE = 0V, TJ = 125°C

F

= ±20V, VCE = 0V

V

GE

Conditions

= 13A

I

C

V

= 400V

CC

= 15V

V

GE

I

= 13A, VCC = 390V

C

= +15V, RG = 10Ω, L = 200µH

V

GE

T

J

= 13A, VCC = 390V

I

C

V

GE

T

J

= 13A, VCC = 390V

I

C

V

GE

T

J

I

= 13A, VCC = 390V

C

V

GE

T

J

V

GE

V

CC

V

GE

T

J

V

CC

Rg = 22Ω, VGE = +15V to 0V

T

J

T

J

T

J

T

J

T

J

T

J

CES

.

CES

f

= 25°C

= +15V, RG = 10Ω, L = 200µH

f

= 25°C

= +15V, RG = 10Ω, L = 200µH

= 125°C

f

= +15V, RG = 10Ω, L = 200µH

= 125°C

f

= 0V

= 30V

= 0V, VCE = 0V to 480V

= 150°C, IC = 80A

= 480V, Vp =600V

= 25°C IF = 4.0A, VR = 200V,

= 125°C

di/dt = 200A/µs

= 25°C IF = 4.0A, VR = 200V,

= 125°C

di/dt = 200A/µs

= 25°C IF = 4.0A, VR = 200V,

= 125°C

.

di/dt = 200A/µs

4, 5,6,8,9

7,8,9

10

17

CT1

CT3

11,13

WF1,WF2

CT3

12,14

WF1,WF2

16

15

3

CT2

19

21

19,20,21,22

CT5

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IRGB20B60PD1

45

40

35

30

)

25

A

(

C

I

20

15

10

5

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

100

10

) A

C

I

1

250

200

150

) W

(

t o

t

P

100

50

0

0 20 40 60 80 100 120 140 160

TC (°C)

Fig. 2 - Power Dissipation vs. Case

Temperature

40

VGE = 15V

35

VGE = 12V VGE = 10V

30

VGE = 8.0V VGE = 6.0V

25

) A

(

20

E C

I

15

10

0

10 100 1000

V

(V)

CE

Fig. 3 - Reverse Bias SOA

TJ = 150°C; V

40

35

30

25

) A

(

20

E C

I

15

10

5

0

VGE = 15V

VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V

0123456

V

CE

GE

(V)

=15V

Fig. 5 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80µs

5

0

0123456

V

(V)

CE

Fig. 4 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80µs

40

35

30

25

) A

(

20

E C

I

15

10

5

0

0123456

VGE = 18V

VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V

V

CE

(V)

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 125°C; tp = 80µs

www.irf.com 3

IRGB20B60PD1

450

400

350

TJ = 25°C

300

)

250

A

(

E C

200

I

TJ = 125°C

150

100

50

0

0 5 10 15 20

V

(V)

GE

Fig. 7 - Typ. Transfer Characteristics

VCE = 50V; tp = 10µs

10

9

8

7

6

) V

(

5

E C

V

4

3

2

1

0

0 5 10 15 20

V

Fig. 9 - Typical V

GE

ICE = 20A

I

CE

I

CE

(V)

vs. V

CE

= 13A

= 8.0A

GE

TJ = 125°C

350

10

9

8

7

6

) V

(

5

E C

V

4

ICE = 20A

I

= 13A

CE

I

= 8.0A

CE

3

2

1

0

0 5 10 15 20

V

(V)

GE

Fig. 8 - Typical V

CE

vs. V

GE

TJ = 25°C

100

(A)

F

T = 150°C

10

1

J

T = 125°C

J

T = 25°C

J

Instantaneous Forward Current - I

0.1

0.0 1.0 2.0 3.0 4.0 5.0 6.0

Forward Voltage Drop - V (V)

FM

Fig. 10 - Typ. Diode Forward Characteristics

tp = 80µs

1000

300

E

250

) J µ

200

(

y g

r e

150

n E

E

OFF

100

) s

100

n

( e m

i T

g n

i h c

i

10

w S

t

R

ON

td

OFF

td

ON

t

F

50

0

0 5 10 15 20 25

Fig. 11 - Typ. Energy Loss vs. I

TJ = 125°C; L = 200µH; V

Diode clamp used: 8ETH06 (See C.T.3)

IC (A)

= 390V, RG = 10Ω; V

CE

C

= 15V.

GE

1

0 5 10 15 20 25

Fig. 12 - Typ. Switching Time vs. I

TJ = 125°C; L = 200µH; V

Diode clamp used: 8ETH06 (See C.T.3)

IC (A)

= 390V, RG = 10Ω; V

CE

C

= 15V.

GE

4 www.irf.com

IRGB20B60PD1

250

200

) J µ

( y

150

g

r e n E

100

50

0 5 10 15 20 25 30 35

Fig. 13 - Typ. Energy Loss vs. R

TJ = 125°C; L = 200µH; V

Diode clamp used: 8ETH06 (See C.T.3)

12

10

8

) J µ

(

6

s e o

E

4

= 390V, I

CE

E

ON

E

OFF

RG (Ω)

= 13A; V

CE

1000

td

OFF

) s

100

n

( e m

i T

g n

i h c

i

10

w S

G

= 15V

GE

TJ = 125°C; L = 200µH; V

t

F

t

R

1

0 10 20 30 40

RG (Ω)

Fig. 14 - Typ. Switching Time vs. R

= 390V, I

CE

td

ON

= 13A; V

CE

G

= 15V

GE

Diode clamp used: 8ETH06 (See C.T.3)

10000

) F p

( e

c n a

t

i c a p a

C

1000

100

Cies

Coes

2

0

0 100 200 300 400 500 600 700

VCE (V)

Fig. 15- Typ. Output Capacitance

Stored Energy vs. V

16

14

12

10

) V

(

8

E G

V

6

4

2

0

0 1020304050607080

Q G, Total Gate Charge (nC)

CE

400V

Fig. 17 - Typical Gate Charge vs. V

I

= 13A

CE

GE

10

0 20 40 60 80 100

Fig. 16- Typ. Capacitance vs. V

1.6

1.5

1.4

) V

(

1.3

) n o

(

1.2

E C

V

1.1

d e z

i

1

l a

m

r

0.9

o N

0.8

0.7

0.6

-50 0 50 100 150 200

Fig. 18 - Normalized Typical V

Cres

V

(V)

CE

VGE= 0V; f = 1MHz

TJ, Junction Temperature (°C)

CE(on)

Junction Temperature I

= 13A; VGE = 15V

CE

vs.

www.irf.com 5

IRGB20B60PD1

A

50

I = 8.0A

45

40

35

trr- (nC)

30

25

V = 200V

R

T = 125°C

J

T = 25°C

J

20

100 1000

di /dt - (A/µs)

f

F

I = 4.0A

F

Fig. 19 - Typical Reverse Recovery vs. dif/dt

14

V = 200V

R

T = 125°C

J

T = 25°C

J

12

I = 8.0A

10

8

F

I = 4.0A

F

Irr- ( A)

6

4

2

0

100 1000

di /dt - (A/µs)

f

Fig. 20 - Typical Recovery Current vs. dif/dt

200

160

120

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 8.0A

F

I = 4.0A

F

1000

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 8.0A

F

I = 4.0A

F

Qrr- (nC)

80

40

0

100 1000

di /dt - (A/µs)

f

di (rec) M/dt- (A /µs)

100

100 1000

Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di

di /dt - (A/µs)

f

/dt vs. dif/dt,

(rec)M

6 www.irf.com

IRGB20B60PD1

τ

1

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

R

1

2

R

1

2

τ

2

τ

2

R

3

4

R

3

τ

3

τ

3

Ri (°C/W) τi (sec)

R

4

0.0076 0.000001

τ

C

τ

0.2696 0.000270

4

τ

4

0.1568 0.001386

0.1462 0.015586

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

)

C J h

t

Z (

e s n o p s e

R l a

0.01

m

r e h T

0.001

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

)

1

C J h

t

Z (

e s n

0.1

o p s e

R l a

m

r e

0.01

h T

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

τ

J

τ

J

τ

1

Ci= τi/Ri

R

1

2

R

1

2

τ

1

2

τ

2

Ri (°C/W) τi (sec)

τ

C

1.779 0.000226

3.223 0.001883

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

D = 0.50

0.001

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

www.irf.com 7

IRGB20B60PD1

0

1K

DU T

L

VCC

80 V

DUT

480 V

Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off)

PFC diode

L

DUT /

DRIVER

Rg

Fig.C.T.3 - Switching Loss Circuit

VCC

REVERSE RECOVERY CIRCUIT

Fig.C.T.2 - RBSOA Circuit

V

CC

R =

I

CM

DUT

Rg

Fig.C.T.4 - Resistive Load Circuit

VCC

V = 200V

R

Ω

0.01

L = 70µH

D.U.T.

dif/dt ADJUST

G

D

IRFP250

S

Fig. C.T.5 - Reverse Recovery Parameter

Test Circuit

8 www.irf.com

IRGB20B60PD1

450

400

350

tf

300

90% I

5% V

5% I

CE

250

(V)

200

CE

V

150

100

50

0

-50

Eoff Loss

-0.20 0.00 0.20 0.40 0.60 0.80

Time(µs)

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 125°C using Fig. CT.3

18

16

14

12

10

8

6

4

2

0

-2

(A)

CE

I

450

400

350

TEST CURRENT

300

250

(V)

200

CE

V

150

tr

90% test current

10% tes t current

100

50

0

5% V

Eon Loss

CE

-50

7.75 7.85 7.95 8. 05 8.15

Time (µs)

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 125°C using Fig. CT.3

45

40

35

30

25

20

15

10

5

0

-5

(A)

CE

I

F

0

1

di /dt

1. dif/dt - Rate of change of current through zero crossing

2. I

- Peak reverse recovery current

RRM

3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 I extrapolated to zero current

and 0.50 I

RRM

Fig. WF3 - Reverse Recovery Waveform and

3

t

rr

t

a

2

I

RRM

f

4. Qrr - Area under curve defined by t and I

5. di current during tb portion of t

t

b

0.5

di(rec)M/dt

0.75

I

RRM

t Qrr = 2

/dt - Peak rate of change of

(rec)M

rr

4

Q

rr

I

RRM

5

rr

X I

RRM

rr

Definitions

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IRGB20B60PD1

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

2X NOTES:

1 DIMEN SIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OU TLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

10.29 (.405)

4

1 2 3

3X

0.36 (.014) M B A M

6.47 (.255)

6.10 (.240)

1.15 (.045) MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

LEAD ASSIGNMENTS

1 - GATE

1 - GATE 2 - DRAIN

2 -COLLECTOR

3 - SOURCE

3 EMITTER

4 - DRAIN

4 - COLLECTOR

0.55 (.022)

3X

0.46 (.018)

TO-220AB Part Marking Information

(;$03/(

TO-220AB package is not recommended for Surface Mount Application.

7+,6, 6$1,5)  /27&2'(

$66(0%/('2 1::  ,17+($66(0%/</,1(&

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

,17(51$7 ,21$/

5(&7,),(5

/2*2

$66(0%/< /27&2'(

This product has been designed and qualified for Industrial

Visit us at www.irf.com for sales contact information. 02/03

3$57180%(5

'$7(&2'( <($5  :((. /,1(&

Data and specifications subject to change without notice.

market.

Qualification Standards can be found on IR’s Web site.

TAC Fax: (310) 252-7903

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