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PD - 91731A
IRG4RC20F
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
Fast Speed IGBT
• Fast: Optimized for medium operating
frequencies (1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
G
V
CES
V
CE(on) typ.
= 600V
= 1.82V
previous generation IGBTs.
• Industry standard TO-252AA package
• Combines very low V
with low switching
CE(on)
losses
E
N-channel
@VGE = 15V, IC = 12A
Benefits
• Generation 4 IGBTs offer highest efficiency
• Optimized for specific application conditions
• High power density and current rating
D-Pak
TO-252AA
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 22
IC @ TC = 100°C Continuous Collector Current 12 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 66
PD @ TC = 100°C Maximum Power Dissipation 26
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector Current 44
Clamped Inductive Load Current 44
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy 5.0 mJ
W
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Wt Weight 0.3 (0.01) ––– g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
Junction-to-Case ––– 1.9
Junction-to-Ambient (PCB mount)* ––– 50
°C/W
2/22/01
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IRG4RC20F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.72 — V/°C VGE = 0V, IC = 1.0mA
J
— 1.82 2.1 IC = 12A VGE = 15V
Collector-to-Emitter Saturation Voltage — 2.42 — IC = 22A See Fig.2, 5
— 2.04 — IC = 12A , TJ = 150°C
V
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 5.2 7.75 — S VCE = 100V, IC = 12A
Zero Gate Voltage Collector Current
— — 250 VGE = 0V, VCE = 600V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 27 40 IC = 12A
Gate - Emitter Charge (turn-on) — 4. 8 6.8 n C VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 11.4 17 VGE = 15V
Turn-On Delay Time — 26 —
Rise Time — 24 — TJ = 25°C
Turn-Off Delay Time — 194 290 IC = 12A, VCC = 480V
ns
Fall Time — 226 340 VGE = 15V, RG = 50Ω
Turn-On Switching Loss — 0.19 — Energy losses include "tail"
Turn-Off Switching Loss — 0.92 — mJ See Fig. 9, 10, 14
Total Switching Loss — 1.11 1.4
Turn-On Delay Time — 25 — TJ = 150°C,
Rise Time — 26 — IC = 12A, VCC = 480V
Turn-Off Delay Time — 263 — VGE = 15V, RG = 50Ω
ns
Fall Time — 443 — Energy losses include "tail"
Total Switching Loss — 1.89 — m J See Fig. 11, 14
Internal Emitter Inductance — 7.5 — n H Measured 5mm from package
Input Capacitance — 540 — VGE = 0V
Output Capacitance — 37 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 7.0 — ƒ = 1.0MHz
Repetitive rating; V
= 20V, pulse width limited by
GE
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
V
= 80%(V
CC
CES
), V
= 20V, L = 10µH, RG = 50Ω,
GE
Pulse width 5.0µs, single shot.
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4RC20F
A
30
20
Squar e wa ve:
60% of rated
voltage
10
Load Current (A)
Ideal diodes
0
0.1 1 10 100
For both:
Duty cycle: 50%
T = 125°C
J
T = 90°C
sink
Gate drive as specified
Powe r Dissipation = 15W
Triangular wave :
Clamp voltage:
80% of rated
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
100
T = 25°C
J
T = 150°C
J
10
C
I , Collector-to-Emitter Current (A)
1
12345
V , Collect o r-to-Emitte r Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
A
100
°
T = 150 C
J
10
°
T = 25 C
J
C
I , Collector-to-Emitter Current (A)
1
6 8 10 12 14
V , Gate-to-Emitter Voltage (V)
GE
V = 50V
CC
5µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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IRG4RC20F
25
20
15
10
5
Maximum DC Collector Current(A)
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig. 4 - Maximum Collector Current vs. Case
Temperature
10
3.0
V = 15V
GE
80 us PULSE WIDTH
2.0
CE
V , Collector-to-Emitter Voltage(V)
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
I = A18
C
I = A9
C
I = A4.5
C
°
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
thJC
D = 0.50
1
0.20
0.10
P
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
DM
t
1 2
1
t
2
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4RC20F
1000
800
600
400
C, Capacitance (pF)
200
0
1 10 100
V
=
0V,
GE
C
=
iesgegc , ce
C
=
resgc
C
=
oes cegc
V , Collector-to-Emitter Voltage (V)
CE
f = 1MHz
C
+ C
C
C
C
ies
C
oes
C
res
C SHORTED
+ C
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.72
V = 480V
CC
V = 15V
GE
°
0.71
T = 25 C
J
I = 9.0A
C
20
V = 400V
CC
I = 12A
C
15
10
5
GE
V , Gate-to-Emitter Voltage (V)
0
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
50Ω
R = 50Ohm
G
V = 15V
GE
V = 480V
CC
I = A
C
24
I = A
12
0.70
0.68
0.67
Total Switching Losses (mJ)
0.66
0 10 20 30 40 50
R , Gate Resistance (Ohm)
G
( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
1
Total Switching Losses (mJ)
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C )
J
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
C
I = A
6
C
°
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IRG4RC20F
y
p
)
p
ply, p
5.0
R = 50Ohm
50 Ω
G
T = 150 C
J
V = 480V
CC
V = 15V
4.0
GE
3.0
2.0
1.0
Total Switching Losses (mJ)
0.0
5 10 15 20 25
°
I , Collector Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
L
V *
50V
1000V
C
D.U.T.
100
V = 20V
GE
T = 125 C
J
10
C
I , Collector Current (A)
1
1 10 100 1000
o
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
CE
Fig. 12 - Turn-Off SOA
480V
RL =
X IC@25°C
0 - 480V
480µF
960V
4
* Driver same t
* Note: D ue to the 50V pow er s u
will in crease t o o btain rate d Id.
50V
e as D.U.T.; Vc = 80% of Vce(max
ulse width and inductor
Fig. 13a - Clamped Inductive
Load Test Circuit
Driver*
1000V
Fig. 13b - Pulsed Collector
Current Test Circuit
I
C
L
V
C
D.U.T.
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
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IRG4RC20F
90%
V
C
90%
10%
5%
I
C
t
d(on)
10%
t
r
E
on
t
d(off)
E = (E +E )
ts on off
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
5.46 (.215)
5.21 (.205)
1.02 (.040)
1.64 (.025)
1.52 (.060)
1.15 (.045)
1.14 (.045)
2X
0.76 (.030)
2.28 (.090)
- A -
4
1 2 3
3X
1.27 (.050)
0.88 (.035)
6.22 (.245)
5.97 (.235)
- B -
0.89 (.035)
0.64 (.025)
0.2 5 ( .0 10) M A M B
4.57 (.180)
Fig. 14b - Switching Loss
Waveforms
t
f
E
off
2.38 (.094)
2.19 (.086)
10.42 (.410)
9.40 (.370)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y 14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CON FORMS TO JE DE C OUTL IN E TO-252A A.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SO LDER DIP MAX. + 0.16 ( .0 06).
t=5µ s
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
6.45 (.245)
5.68 (.224)
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
1 - G ATE
0.51 (.020)
MIN.
0.58 (.023)
0.46 (.018)
2 - D RAIN
3 - SOURCE
4 - D RAIN
1 - GATE
2 - COLLECTOR
3 - EMITTER
4 - COLLECTOR
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IRG4RC20F
D-Pak (TO-252AA) Tape & Reel Information
TR
1 6 .3 ( .6 4 1 )
1 5 .7 ( .6 1 9 )
12.1 ( .476 )
11.9 ( .469 )
NOT ES :
1. CO NTRO LLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS AR E SH O WN IN M ILLIMETER S ( INCHES ).
3. OU TL INE C O N F O R MS TO EIA-481 & EIA-541.
13 INCH
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
FEED DIRECTION
16 m m
NOTES :
1. OUT L IN E C O NFO RMS TO EIA- 4 8 1.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 2/01
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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