Datasheet IRG4PH50UPBF Specification

TO-247AC

PD - 91574B

IRG4PH50U

INSULATED GATE BIPOLAR TRANSISTOR

FeaturesFeatures

Features

FeaturesFeatures

C

Ultra Fast Speed IGBT

• UltraFast: Optimized for high operating

V

frequencies up to 40 kHz in hard switching,

= 1200V

CES

>200 kHz in resonant mode

• New IGBT design provides tighter parameter distribution and higher efficiency than previous generations

• Optimized for power conversion; SMPS, UPS and welding

G

E

n-channel

V

CE(on) typ.

= 2.78V

@VGE = 15V, IC = 24A

• Industry standard TO-247AC package

Benefits

• Higher switching frequency capability than competitive IGBTs

• Highest efficiency available

• Much lower conduction losses than MOSFETs

• More efficient than short circuit rated IGBTs

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 45 IC @ TC = 100°C Continuous Collector Current 24 A I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 200 PD @ TC = 100°C Maximum Power Dissipation 78 T

J

T

STG

Collector-to-Emitter Breakdown Voltage 1200 V

Pulsed Collector Current Q 180 Clamped Inductive Load Current R 180 Gate-to-Emitter Voltage ± 20 V Reverse Voltage Avalanche Energy S 170 mJ

Operating Junction and -55 to + 150 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

W

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Wt Weight 6 (0.21) ––– g (oz)

Junction-to-Case ––– 0.64 Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W Junction-to-Ambient, typical socket mount ––– 40

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IRG4PH50U

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

E

on

E

off

E

ts

L

E

C

ies

C

oes

C

res

Notes:

Q Repetitive rating; V

max. junction temperature. ( See fig. 13b )

R V

(See fig. 13a)

Collector-to-Emitter Breakdown Voltage 1200 —— VVGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 1.20 — V/°CVGE = 0V, IC = 1.0mA

J

— 2.56 3.5 IC = 20A

Collector-to-Emitter Saturation Voltage

— 2.78 3.7 IC = 24A VGE = 15V — 3.20 — I

V

= 45 A See Fig.2, 5

C

— 2.54 — IC = 24A , TJ = 150°C

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -13 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance U 23 35 — SVCE = 100V, IC = 24A

——250 VGE = 0V, VCE = 1200V

Zero Gate Voltage Collector Current ——2.0 µA VGE = 0V, VCE = 24V, TJ = 25°C

——5000 VGE = 0V, VCE = 1200V, TJ = 150°C

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) — 160 250 IC = 24A Gate - Emitter Charge (turn-on) — 27 40 nC VCC = 400V See Fig. 8 Gate - Collector Charge (turn-on) — 53 83 VGE = 15V Turn-On Delay Time — 35 — Rise Time — 15 — TJ = 25°C Turn-Off Delay Time — 200 350 IC = 24A, VCC = 960V

ns

Fall Time — 290 500 VGE = 15V, RG = 5.0Ω Turn-On Switching Loss — 0.53 — Energy losses include "tail" Turn-Off Switching Loss — 1.41 — mJ See Fig. 9, 10, 14 Total Switching Loss — 1.94 2.6 Turn-On Delay Time — 31 — TJ = 150°C Rise Time — 18 — IC = 24A, VCC = 960V Turn-Off Delay Time — 320 — VGE = 15V, RG = 5.0Ω

ns

Fall Time — 280 — Energy losses include "tail" Total Switching Loss — 5.40 — See Fig. 11, 14

mJ

Turn-On Switching Loss — 0.35 — TJ = 25°C, VGE = 15V, RG = 5.0Ω Turn-Off Switching Loss — 1.43 — IC = 20A, VCC = 960V

Total Switching Loss

— 1.78 2.9 Energy losses include "tail" — 4.56 — See Fig. 9, 10, 11, 14, TJ = 150°C

mJ

Internal Emitter Inductance — 13 — nH Measured 5mm from package Input Capacitance — 3600 — VGE = 0V Output Capacitance — 160 — pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance — 31 —ƒ = 1.0MHz

S Repetitive rating; pulse width limited by maximum

junction temperature.

T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot.

= 80%(V

CC

CES

= 20V, pulse width limited by

GE

), V

= 20V, L = 10µH, RG = 5.0Ω,

GE

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IRG4PH50U

)

A

60

40

Square wave:

60 % o f r a ted v o l tage

20

Load Current (A)

0

0.1 1 10 100

I

Ideal diodes

For both:

Duty cycle: 50% T = 125°C

J

T = 90°C

sink

Gat e drive as spec ified

Pow er Dissipation = 40W

Triangular wave :

I

Clam p v oltage : 80 % o f rated

f, Frequency (kHz

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

1000

100

o

T = 150 C



J

10

o

T = 25 C



J

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE



20µs PULSE WIDTH

1000

100



10

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12

o

T = 150 C

J

o

T = 25 C



J

V = 50V

CC



5µs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PH50U

50

40

30

20

10

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1

4.0

V = 15V

GE



80 us PULSE WIDTH

3.5

3.0

2.5

CE

V , Collector-to-Emitter Voltage(V)

2.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J



I = A48

C



I = A24

C



I = A12

C

°

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

0.50

thJC

0.20

0.1

0.10

0.05

0.02

0.01

SINGLE PULSE



(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

0.001

0.00001 0.0001 0.001 0.01 0.1 1

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

P

DM

t



1 2

1

t

2

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4PH50U

7000

6000

5000

4000

3000

C, Capacitance (pF)

2000

1000

0

1 10 100

V

=

0V,

GE

C

=

iesgegc , ce

C

=

resgc



C

=

oes cegc

C



ies

C



oes

C



res

V , Collector-to-Emitter Voltage (V)

CE

f = 1MHz

C

+ C C C

C SHORTED

+ C

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

5.0 V

= 960V

CC

VGE = 15V TJ = 25°C

4.0 I

= 24A

C

3.0

20

V = 400V

CC



I = 24A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 40 80 120 160 200

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

Ω

RG = 5.0 V

= 15V

GE

V

= 960V

CC

10

IC = 48A

IC = 24A

2.0

Total Switching Losses (mJ)

1.0

0.0

0 10 20 30 40 50

RG, Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

1

Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

IC = 12A

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IRG4PH50U

20

15

10

5

Total Switching Losses (mJ)

0

0 10 20 30 40 50

Ω

RG = 5.0 TJ = 150°C

V

= 15V

GE

V

= 960V

CC

IC, Collector Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V = 20V

GE



T = 125 C

J

100

10

C

I , Collector-to-Emitter Current (A)

SAFE OPERATING AREA



1

1 10 100 1000 10000

o

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

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IRG4PH50U

y

p

)

p

ply, p

50V

Q

* Driver same t * Note: D ue to the 50V pow er s u will in cre ase t o obta in ra te d Id.

e as D .U.T.; Vc = 80% o f V ce(max

Fig. 13a - Clamped Inductive

Load Test Circuit

50V

1000V

Q

1000V

L

V *

C

ulse width and inductor

D.U.T.

L

Driver*

R

960V

RL =

X IC@25°C

0 - 960V

480µF 960V

4

R

Fig. 13b - Pulsed Collector

Current Test Circuit

I

C

V

C

S

D.U.T.

Fig. 14a - Switching Loss

Test Circuit

* Driver same type as D.U.T., VC = 960V

Q

R

90%

S

V

C

90%

10%

5%

I

C

t

d(on)

10%

t

r

E

on

t

d(off)

E = (E +E )

ts o n o ff

Fig. 14b - Switching Loss

Waveforms

t

f

E

off

t=5µ s

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IRG4PH50U

)

Case Outline and Dimensions — TO-247AC

20.30 (.800)

19.70 (.775)

14.80 (.583)

14.20 (.559)

2.40 (.094)

2.00 (.079)

2X

5.45 (.215 ) 2X

15.90 (.626)

15.30 (.602)

- B -

1

23

- D -

5.30 (.209)

4.70 (.185)

2.50 (.089)

1.50 (.059)

0.80 (.031)

3X

0.40 (.016)

2.60 (.102)

2.20 (.087)

4

3X

0.25 (.010)

3.40 (.133)

3.00 (.118)

3.65 (.143 )

3.55 (.140 )

0.25 (.010)

- A -

5.50 (.217)

2X

- C -

4.30 (.170)

3.70 (.145)

1.40 (.056)

1.00 (.039)

5.50 (.217)

4.50 (.177)

M

C

M

D

B

S

A

CONFORMS TO JED EC OU TLINE TO-247AC (TO-3P)

Dimensions in Millimeters and (Inches)

NOTES: 1 DIMENSIONS & TOLERANCING PER AN SI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 D IMEN SION S AR E SHO W N MIL L IME T E R S (INCHES). 4 C ONF ORM S T O J E DEC O U TL IN E TO-247AC.

LEAD ASSIGNMENTS 1 - G A TE 2 - C OL L ECT OR 3 - E MITT ER 4 - C OL L ECT OR

LONGER LEADED (20mm)

*

VERSION AVAILABLE (TO-247AD TO ORDER ADD "-E" SUFFIX TO PART NUMBER

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http://www.irf.com/ Data and specifications subject to change without notice. 01/02

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