Datasheet irg4ph40s Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

TO-247AC

PD -91808

IRG4PH40S

Standard Speed IGBT

Features

C

• Extremely low on state voltage drop 1.0V typical at

V

= 1200V

5.0A

• Extremely low V

variation from lot to lot

CE(on)

• Industry standard TO-247AC package

G

E

CES

V

CE(on) typ.

= 1.46V

@VGE = 15V, IC = 20A

N-channel

Benefits

• High current density systems

• Optimized for specific application conditions

• Lower voltage drop than many high voltage MOSFETs

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 33
IC @ TC = 100°C Continuous Collector Current 20 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 160 W
PD @ TC = 100°C Maximum Power Dissipation 65
T

J

T

STG

Collector-to-Emitter Voltage 1200 V

Pulsed Collector Current 66
Clamped Inductive Load Current  66
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 250 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Wt Weight 6.0(0.21) ––– g (oz)

Junction-to-Case ––– 0.77
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40

www.irf.com 1

9/23/98

IRG4PH40S

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage  18 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 1.23 — V/°C VGE = 0V, IC = 1.0mA

J

— 1.46 1.75 IC = 20A VGE = 15V

Collector-to-Emitter Saturation Voltage — 1.71 — IC = 33 A See Fig.2, 5

— 1.51 — IC = 20A , TJ = 150°C

V

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -9.6 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  17 26 — S VCE = 50 V, IC = 20A
Zero Gate Voltage Collector Current

— — 250 VGE = 0V, VCE = 1200V
— — 5000 VGE = 0V, VCE = 1200V, TJ = 150°C

µA

Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) — 85 130 IC = 20A
Gate - Emitter Charge (turn-on) — 13 19 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 31 46 VGE = 15V
Turn-On Delay Time — 20 —
Rise Time — 17 — TJ = 25°C
Turn-Off Delay Time — 650 970 IC = 20A, VCC = 960V

ns

Fall Time — 520 790 VGE = 15V, RG = 10Ω
Turn-On Switching Loss — 0.70 — Energy losses include "tail"
Turn-Off Switching Loss — 10.42 — mJ See Fig. 9,10,14
Total Switching Loss — 11.12 22
Turn-On Delay Time — 20 — TJ = 150°C,
Rise Time — 19 — IC = 20A, VCC = 960V
Turn-Off Delay Time — 850 — VGE = 15V, RG = 10Ω

ns

Fall Time — 1150 — Energy losses include "tail"
Total Switching Loss — 19.5 — mJ See Fig. 10,11,14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 1840 — VGE = 0V
Output Capacitance — 110 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 18 — ƒ = 1.0MHz

Notes:

 Repetitive rating; V

max. junction temperature. ( See fig. 13b )

 V

= 80%(V

CC

(See fig. 13a)

CES

= 20V, pulse width limited by

GE

), V

= 20V, L = 10µH, RG = 10Ω,

GE

 Repetitive rating; pulse width limited by maximum

junction temperature.

 Pulse width ≤ 80µs; duty factor ≤ 0.1%.
 Pulse width 5.0µs, single shot.

2 www.irf.com

IRG4PH40S

)

A

60

50

40

Square wave:

30

20

Load C u rrent (A)

10

0

0.1 1 10 100

60% of rated
voltage

Idea l diodes

For both:

Duty cycle: 50%
T = 125°C

J

T = 90°C

sink

Gate drive as specified

Power Dissipation = 35W

Triangular wave:

Clamp voltage:
80% of rated

f, Frequency (kH z

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

1000

of fundamental)

RMS

1000

100

10

C

I , Collector Current (A)

1

1.0 2.0 3.0 4.0 5.0

°

T = 25 C

J

T = 150 C

V , Collector-to-Emitter Voltage (V)

CE

°

J

V = 15V

GE

20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

www.irf.com 3

100

T = 150 C

10

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12

°

J

°

T = 25 C

J

V = 50V

CC

5µs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

Fig. 3 - Typical Transfer Characteristics

5µs PULSE WIDTH

IRG4PH40S

35

30

25

20

15

10

5

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1

3.0

V = 15V

GE

80 us PULSE WIDTH

I = A40

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

C

I = A20

C

I = A10

C

°

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

D = 0.50

thJC

0.20

0.1

0.10
P

1 2

DM

t

1

t

2

0.05

Thermal Response (Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4 www.irf.com

IRG4PH40S

4000

3000

2000

C, Capacitance (pF)

1000

0

1 10 100

V

=

0V,

GE

C

=

iesgegc , ce

C

=

resgc

C

=

oes cegc

C

ies

C

oes

C

res

V , Collector-to-Emitter Voltage (V)

CE

f = 1MHz

C

+ C
C
C

C SHORTED

+ C

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

13

V = 960V

CC

V = 15V

GE

T = 25 C

J

I = 20A

C

°

20

V = 400V

CC

I = 20A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 20 40 60 80 100

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

R =

10Ω

G

V = 15V

GE

V = 960V

CC

I = A

C

40

I = A

20

C

12

Total Switching Losses (mJ)

11

0 10 20 30 40 50

R , Gate Resistance

G

( Ω )

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

10

I = A

C

Total Switching Losses (mJ)

1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

°

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

10

www.irf.com 5

IRG4PH40S

50

R =

10 Ω

G

T = 150 C

J

V = 960V

CC

V = 15V

40

GE

30

20

10

Total Switching Losses (mJ)

0

10 20 30 40

°

I , Collector Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector Current

1000

V = 20V

GE

T = 125 C

J

100

10

C

I , Collector Current (A)

1

1 10 100 1000 10000

o

SAFE OPERATING AREA

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

6 www.irf.com

IRG4PH40S

y

p

)

p

ply, p

50V



* Driver same t
* Note: D ue to the 50V pow er s u
will in cre ase t o obtain ra t e d Id.

e as D.U.T.; Vc = 80% of Vce(max

Fig. 13a - Clamped Inductive

Load Test Circuit

50V

1000V



1000V

L

V *

C

ulse width and inductor

D.U.T.

L

Driv e r*



960V

2

X IC@25°C

0 - 960V

480µF
960V

RL =



Fig. 13b - Pulsed Collector

Current Test Circuit

I

C

V

C



D.U.T.

Fig. 14a - Switching Loss

Test Circuit

* Driver same type
as D.U.T., VC = 960V





90%



V

C

90%

10%

5%

I

C

t

d(on)

10%

t

r

E

on

t

d(off)

E = (E +E )

ts o n o ff

Fig. 14b - Switching Loss

Waveforms

t

f

E

off

t=5µs

www.irf.com 7

IRG4PH40S

)

Case Outline and Dimensions — TO-247AC

20.30 (.800)

19.70 (.775)

14.80 (.583)

14.20 (.559)

2.40 (.094)

2.00 (.079)

2X

5.45 (.215 )
2X

15.90 (.626)

15.30 (.602)

- B -

1

23

- D -

2.50 (.089)

1.50 (.059)

3X

2.60 (.102)

2.20 (.087)

5.30 (.209)

4.70 (.185)

4

0.80 (.031)

0.40 (.016)

3X

0.25 (.010)

3.40 (.133)

3.00 (.118)

3.65 (.143 )

3.55 (.140 )

0.25 (.010)

- A -

5.50 (.217)

2X

- C -

4.30 (.170)

3.70 (.145)

1.40 (.056)

1.00 (.039)

5.50 (.217)

4.50 (.177)

M

C

M

M

D

B

S

A

CONFORMS TO JED EC OU TLINE TO-247AC (TO-3P)

Dimensions in Millimeters and (Inches)

NOTES:
1 DIMENSIONS & TOLERANCING
PER AN SI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 D IME NS ION S A R E S HOW N
MIL L IME T ERS (INCHES).
4 C ON F O RM S T O JED EC O UT L IN E
TO-247AC.

LEAD ASSIGNMENTS
1 - G A TE
2 - C OL L E C T O R
3 - E MITT E R
4 - C OL L E C T O R

LONGER LEADED (20mm)

*

VERSION AVAILABLE (TO-247AD
TO ORDER ADD "-E" SUFFIX
TO PART NUMBER

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: [phone]

http://www.irf.com/ Data and specifications subject to change without notice. 9/98

8 www.irf.com