Datasheet irg4pc60u-p Datasheet

PD - 94441

IRG4PC60U-P

INSULATED GATE BIPOLAR TRANSISTOR

Features

C

UltraFast Speed IGBT

• UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode.

• Application in UPS, Welding and High Current power supply.

G

V

CES

V

CE(on) typ.

= 600V

= 1.6V

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.

• Solder plated version of industry standard TO-247AC package.

E

n-channel

@VGE = 15V, IC = 40A

Benefits

• Generation 4 IGBT's offer highest efficiency available.

• Solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material.

• Designed for best performance when used with IR HEXFRED & IR FRED companion diodes.

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 75 IC @ TC = 100°C Continuous Collector Current 40 A I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 520 PD @ TC = 100°C Maximum Power Dissipation 210 T

J

T

STG

Collector-to-Emitter Breakdown Voltage 600 V

Pulsed Collector Current Q 300 Clamped Inductive Load Current R 300 Gate-to-Emitter Voltage ± 20 V Reverse Voltage Avalanche Energy S 200 mJ

Operating Junction and -55 to + 150 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) Maximum Reflow TemperatureW 230 (Time above 183°C ° C

should not exceed 100s)

W

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

R

θJA

Wt Weight 6 (0.21) ---- g (oz)

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Junction-to-Case ---- 0.24 Case-to-Sink, Flat, Greased Surface 0.24 ---- °C/W Junction-to-Ambient (Typical Socket Mount) ---- 40 Junction-to-Ambient (PCB Mount, Steady State)V ---- 20

04/26/02

IRG4PC60U-P

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage T 17 ---- ---- V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage ---- 0.28 ---- V/°C VGE = 0V, IC = 1.0mA

J

---- 1.7 2.0 IC = 40A VGE = 15V

Collector-to-Emitter Saturation Voltage ---- 1.9 ---- IC = 75A See Fig.2, 5

---- 1.6 ---- I

V

= 40A , TJ = 150°C

C

Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage ---- -12 ---- mV/°C VCE = VGE, IC = 250µA

Forward Transconductance U 44 59 ---- S VCE ≥ 100V, IC = 40A Zero Gate Voltage Collector Current

---- ---- 250 VGE = 0V, VCE = 600V

---- ---- 2.0 VGE = 0V, VCE = 10V, TJ = 25°C

µA

---- ---- 5000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) ---- 310 320 IC = 40A Gate - Emitter Charge (turn-on) ---- 41 46 nC VCC = 480V See Fig. 8 Gate - Collector Charge (turn-on) ---- 110 120 VGE = 15V Turn-On Delay Time ---- 39 ---Rise Time ---- 42 ---- TJ = 25°C Turn-Off Delay Time ---- 200 IC = 40A, VCC = 480V

ns

Fall Time ---- 100 VGE = 15V, RG = 5.0Ω Turn-On Switching Loss ---- 0.28 ---- Energy losses include "tail" Turn-Off Switching Loss ---- 1.1 ---- mJ See Fig. 10, 11, 13, 14 Total Switching Loss ---- 1.3 1.8 Turn-On Delay Time ---- 36 ---- TJ = 150°C, Rise Time ---- 42 ---- IC = 40A, VCC = 480V Turn-Off Delay Time ---- 300 ---- VGE = 15V, RG = 5.0Ω

ns

Fall Time ---- 160 ---- Energy losses include "tail" Total Switching Loss ---- 2.6 ---- mJ See Fig. 13, 14 Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package Input Capacitance ---- 5860 ---- VGE = 0V Output Capacitance ---- 370 ---- pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance ---- 75 ---- ƒ = 1.0MHz

Notes:

Q Repetitive rating; V

max. junction temperature. ( See fig. 13b ) V

R

= 80%(V

CC

(See fig. 13a)

CES

= 20V, pulse width limited by

GE

), V

= 20V, Rg = 5.0W.

GE

S Repetitive rating; pulse width limited by maximum

junction temperature.

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.

U Pulse width 5.0µs, single shot. V When mounted on 1" square PCB ( FR-4 or G-10

Material ). For recommended footprint and soldering techniques refer to application note #AN-994.

W Refer to application note # 1023, "Surface Mounting of

Larger Devices."

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IRG4PC60U-P

60

50

40

60% of rated

30

20

Load Current ( A )

10

0

0.1 1 10 100

voltage

Ideal diodes

f , Frequency ( kHz )

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

of fundamental; for triangular wave, I=IPK)

RMS

Duty cycle : 50% Tj = 125°C Tsink = 90°C Ta = 55°C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 73W for Heatsink Mount Power Dissipation = 3.5W for typical PCB socket Mount

(A)

1000

100

TJ = 150°C

100

10

TJ = 150°C

TJ = 25°C

10

1

, Collector t-to-Emitter Current (A)

C

I

0.1

Fig. 2 - Typical Output Characteristics

TJ = 25°C

V

= 15V

GE

20µs PULSE WIDTH

0.0 1.0 2.0 3.0 4.0 5.0 V

, Collector-to-Emitter Voltage (V)

CE

Collector-to-Emitter Current

C,

I

V

CC

5µs PULSE WIDTH

1

4567891011

V

Gate-to-Emitter Voltage (V)

GE,

Fig. 3 - Typical Transfer Characteristics

= 10V

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IRG4PC60U-P

80

70

60

50

40

30

20

Maximum DC Collector Current (A)

10

0

25 50 75 100 125 150

TC, Case Temperature (°C)

Fig. 4 - Maximum Collector Current vs.

Case Temperature

1

3.0 V

= 15V

V

= 15V

GE

, Collector-to Emitter Voltage (V)

CE

V

GE

80µs PULSE WIDTH

IC = 80A

2.0

IC = 40A

IC = 20A

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig. 5 - Collector-to-Emitter Voltage vs.

Junction Temperature

thJC

D = 0.50

0.1

0.20

0.10

0.05

0.02

0.01

Thermal Response (Z )

0.001

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)



t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

J DM thJC C

P

DM

t



1 2

1

t

2

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4PC60U-P

)

10000

8000

6000

4000

C, Capacitance (pF)

2000

0

1 10 100

V

=

0V,

GE

C

=

ies ge gc , ce

C

=

res gc



C

oes ce gc

CE

=

ies



C

oes



C

res

V , Collector-to-Emitter Voltage (V

f = 1MHz

C

+ C C C

C SHORTED

+ C

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

5.00 V

= 480V

CC

VGE = 15V TJ = 25°C I

C

= 40A

4.00

20

V

= 480V

cc

V = 400V

CC

Ic = 40V



I = 40A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 100 200 300 400

Q , Total Gate Charge (nC

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

Ω

RG = 5.0 V

= 15V

GE

V

= 480V

CC

10

IC = 80A

3.00

IC = 40A

2.00

Total Switching Losses (mJ)

1.00

0 10 20 30 40 50

RG, Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

1

Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

IC = 20A

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IRG4PC60U-P

8.0

7.0

6.0

5.0

4.0

3.0

2.0

Total Switching Losses (mJ)

1.0

0.0 20 30 40 50 60 70 80

Ω

RG = 5.0 TJ = 150°C

V

= 15V

GE

V

= 480V

CC

IC, Collector Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V

= 20V

GE

TJ = 125°

100

SAFE OPERATING AREA

10

, Collector-to-Emitter Current (A)

C

I

1

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig. 12 - Turn-Off SOA

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IRG4PC60U-P

y

p

)

p

ply, p

50V

Q

* Driver same t * Note: D ue to the 50V pow er s u will in crease t o ob tain rated Id.

e as D .U.T.; Vc = 80% o f V ce(max

Fig. 13a - Clamped Inductive

Load Test Circuit

50V

1000V

Q

1000V

L

V *

C

ulse width and inductor

D.U.T.

L

Driver*

R

480V

RL =

X IC@25°C

0 - 480V

480µF 960V

4

R

Fig. 13b - Pulsed Collector

Current Test Circuit

I

C

V

C

S

D.U.T.

Fig. 14a - Switching Loss

Test Circuit

* Driver same type as D.U.T., VC = 480V

Q

R

90%

S

V

C

90%

10%

5%

I

C

t

d(on)

10%

t

r

E

on

t

d(off)

E = ( E +E )

ts on off

Fig. 14b - Switching Loss

Waveforms

t

f

E

off

t=5µ s

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IRG4PC60U-P

A

(

)

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

- D -

5.30 (.209)

4.70 (.185)

2.50 (.089)

1.50 (.059)

3X

2.60 (.102)

2.20 (.087)

4

0.80 (.03 1)

0.40 (.01 6)

20.30 (.8 00)

19.70 (.7 75)

14.80 (.583)

14.20 (.559)

2.40 (.094)

2.00 (.079)

2X

5.45 (.215 ) 2X

15.90 (.626)

15.30 (.602)

- B -

1

23

3X

0.25 (.010)

3.40 (.133)

3.00 (.118)

3.65 (.143 )

3.55 (.140 )

0.25 (.010)

- A -

5.50 (.217)

2X

- C -

4.30 (.170)

3.70 (.145)

1.40 (.056)

1.00 (.039)

5.50 (.217)

4.50 (.177)

M

C

M

D

B

S

A

Solderable TO-247AC Part Marking Information

E XA MPLE : T HIS IS A N IR F P E 3 0 W ITH ASSEMBLY LOT C O D E 3A1 Q

INTERN ATIONAL R E C T IF IE R LO GO

ASSEMBLY LO T C OD E

IR FP E3 0

3A1Q 9302

NOTES: 1 DIM ENSIONS & TOLERANCING PER AN SI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 D IME NS IO NS A R E SH O W N MIL L IME T E R S 4 C ON F O R M S TO JE D EC O U T L INE TO-247AC.

LEAD ASSIGNMENTS 1 - G A T E 2 - C OL L E CTO R 3 - E MIT T ER 4 - C OL L E CTO R

LONGER LEADED (20mm)

*

VERSION AVAILABLE (TO-247AD TO ORDER ADD "-E" SUFFIX TO PART NUMBER

INCHES).

PART NUMBER

DATE CODE (YYWW) YY = YEAR WW WEEK

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.04/02

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