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PD - 94442
IRG4PC60F
INSULATED GATE BIPOLAR TRANSISTOR
FeaturesFeatures
Features
FeaturesFeatures
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
C
Fast Speed IGBT
= 600V
V
CES
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
• Industry standard TO-247AC package.
G
E
V
CE(on)
typ. = 1.50V
@VGE = 15V, IC = 60A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed for best performance when used with
IR Hexfred & IR Fred companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 90
IC @ TC = 100°C Continuous Collector Current 60 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 520
PD @ TC = 100°C Maximum Power Dissipation 210
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector Current Q 120
Clamped Inductive Load Current R 120
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 200 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
W
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 6 (0.21) ––– g (oz)
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Junction-to-Case ––– 0.24
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40
04/26/02
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IRG4PC60F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Q Repetitive rating; V
max. junction temperature. ( See fig. 13b )
R V
RG = 5.0Ω. (See fig. 13a)
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 16 — — V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.13 — V/°C VGE = 0V, IC = 1.0mA
J
— 1.5 1.8 I
Collector-to-Emitter Saturation Voltage — 1.7 — IC = 90A See Fig.2, 5
— 1.5 — I
V
= 60A VGE = 15V
C
= 60A , TJ = 150°C
C
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — - 11 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance U 36 69 — S VCE = 100V, IC = 60A
Zero Gate Voltage Collector Current
— — 250 VGE = 0V, VCE = 600V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 29 0 340 IC = 40A
Gate - Emitter Charge (turn-on) — 40 47 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 100 130 VGE = 15V
Turn-On Delay Time — 42 —
Rise Time — 66 — TJ = 25°C
Turn-Off Delay Time — 3 10 360 IC = 60A, VCC = 480V
ns
Fall Time — 170 220 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 0.30 — Energy losses include "tail"
Turn-Off Switching Loss — 4.6 — mJ See Fig. 10, 11, 13, 14
Total Switching Loss — 4.9 6.3
Turn-On Delay Time — 39 — TJ = 150°C,
Rise Time — 66 — IC = 60A, VCC = 480V
Turn-Off Delay Time — 4 70 — VGE = 15V, RG = 5.0Ω
ns
Fall Time — 300 — Energy losses include "tail"
Total Switching Loss — 8.8 — mJ See Fig. 13, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 6050 — VGE = 0V
Output Capacitance — 3 60 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 66 — ƒ = 1.0MHz
= 20V, pulse width limited by
GE
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
= 80%(V
CC
CES
), V
= 20V, L = TBD µH,
GE
S Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4PC60F
160
120
80
Load Current ( A )
40
For both:
Duty cycle : 50%
Tj = 125°C
Square wave:
60% of rated
voltage
Ideal diodes
Triangular w ave:
Clamp voltage:
80% of rated
Tsink = 90°C
Gate drive as specified
Power Dissipation = 73W
0
0.1 1 10 100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
of fundamental; for triangular wave, I=IPK)
RMS
1000
100
TJ = 150°C
10
1
TJ = 25°C
0.1
, Collector t-to-Emitter Current (A)
C
I
V
GE
= 15V
20µs PULSE WIDTH
0.01
0.0 1.0 2.0 3.0 4.0 5.0
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 2 - Typical Output Characteristics
1000
(A)
100
TJ = 150°C
10
1
TJ = 25°C
0.1
Collector-to-Emitter Current
C,
I
0.01
V
= 10V
CC
5µs PULSE WIDTH
4567891011
V
Gate-to-Emitter Voltage (V)
GE,
Fig. 3 - Typical Transfer Characteristics
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IRG4PC60F
100
90
80
70
60
50
40
30
20
Maximum DC Collector Current (A)
10
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
= 15V
GE
Fig. 4 - Maximum Collector Current vs. Case
Temperature
1
3.0
V
= 15V
GE
80µs PULSE WIDTH
IC = 120A
2.0
IC = 60A
, Collector-to Emitter Voltage (V)
CE
V
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
IC = 30A
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
thJC
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
Thermal Response (Z )
0.001
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
P
DM
t
1 2
1
t
2
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PC60F
100000
10000
V
= 0V, f = 1 MHZ
GE
C
= C
ies
ge
C
= C
res
ce
C
= C
oes
ce
+ Cgc, C
+ C
gc
Cies
1000
Capacitance (pF)
100
Coes
Cres
10
0 100 200 300 400 500
V
(V)
CE
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
8.00
V
= 480V
CC
VGE = 15V
TJ = 25°C
I
C
= 60A
7.00
SHORTED
ce
20
V = 400V
CC
I = 40A
C
15
10
5
GE
V , Gate-to-Emitter Voltage (V)
0
0 50 100 150 200 250 300
Q , Total Gate Charge (nC)
G
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
Ω
RG = 5.0
V
= 15V
GE
V
= 480V
CC
IC = 120A
6.00
5.00
Total Switching Losses (mJ)
4.00
0 10 20 30 40 50
RG, Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
10
Total Switching Losses (mJ)
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
IC = 60A
IC = 30A
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
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IRG4PC60F
30.0
20.0
10.0
Total Switching Losses (mJ)
0.0
30 50 70 90 110 130
Ω
RG = 5.0
TJ = 150°C
V
= 15V
GE
V
= 480V
CC
IC, Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
V
= 20V
GE
TJ = 125°
100
SAFE OPERATING AREA
10
, Collector-to-Emitter Current (A)
C
I
1
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4PC60F
y
p
)
p
ply, p
50V
Q
* Driver same t
* Note: D ue to the 50V pow er s u
will in crease t o ob tain rated Id.
e as D .U.T.; Vc = 80% o f V ce(max
Fig. 13a - Clamped Inductive
Load Test Circuit
50V
1000V
Q
1000V
L
V *
C
ulse width and inductor
D.U.T.
L
Driver*
R
480V
RL =
X IC@25°C
0 - 480V
480µF
960V
4
R
Fig. 13b - Pulsed Collector
Current Test Circuit
I
C
V
C
S
D.U.T.
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
Q
R
90%
S
V
C
90%
10%
5%
I
C
t
d(on)
10%
t
r
E
on
t
d(off)
E = ( E +E )
ts on off
Fig. 14b - Switching Loss
Waveforms
t
f
E
off
t=5µ s
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IRG4PC60F
)
Case Outline and Dimensions — TO-247AC
20.30 (.8 00)
19.70 (.7 75)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215 )
2X
15.90 (.626)
15.30 (.602)
- B -
1
23
- D -
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
3X
2.60 (.102)
2.20 (.087)
4
0.80 (.03 1)
0.40 (.01 6)
3X
0.25 (.010)
3.40 (.133)
3.00 (.118)
3.65 (.143 )
3.55 (.140 )
0.25 (.010)
- A -
5.50 (.217)
2X
- C -
4.30 (.170)
3.70 (.145)
1.40 (.056)
1.00 (.039)
5.50 (.217)
4.50 (.177)
M
C
M
M
D
B
S
A
CONFORMS TO JED EC OU TLINE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches)
NOTES:
1 DIMENSIONS & TOLERANCING
PER AN SI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 D IME NS IO NS A R E SH O W N
MIL L IME T E R S (INCHES).
4 C ON F O R M S TO JE D EC O U T L INE
TO-247AC.
LEAD ASSIGNMENTS
1 - G A T E
2 - C OL L E CTO R
3 - E MIT T ER
4 - C OL L E CTO R
LONGER LEADED (20mm)
*
VERSION AVAILABLE (TO-247AD
TO ORDER ADD "-E" SUFFIX
TO PART NUMBER
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/02
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