Datasheet IRG4PC50WPBF Specification

INSULATED GATE BIPOLAR TRANSISTOR

TO-247AC

PD - 91657B

IRG4PC50W

FeaturesFeatures

Features

FeaturesFeatures

• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)

C

V

= 600V

CES

applications

• Industry-benchmark switching losses improve
efficiency of all power supply topologies

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers

G

E

n-channel

V

CE(on) max.

= 2.30V

@VGE = 15V, IC = 27A

tighter parameters distribution, exceptional reliability

Benefits

• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)

• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >300 kHz)

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 55
IC @ TC = 100°C Continuous Collector Current 27 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
T

J

T

STG

Collector-to-Emitter Breakdown Voltage 600 V

Pulsed Collector Current Q 220
Clamped Inductive Load Current R 220
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 170 mJ

Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

W

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Wt Weight 6 (0.21) ––– g (oz)

Junction-to-Case ––– 0.64
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40

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2/7/2000

IRG4PC50W

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)CES

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Notes:

Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.41 — V/°CVGE = 0V, IC = 5.0mA

J

— 1.93 2.3 IC = 27A VGE = 15V

Collector-to-Emitter Saturation Voltage — 2.25 — IC = 55A See Fig.2, 5

— 1.71 — IC = 27A , TJ = 150°C

V

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°CVCE = VGE, IC = 1.0mA

Forward Transconductance U 27 41 — SVCE = 100 V, IC = 27A

Zero Gate Voltage Collector Current

——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C

µA

——5000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) — 180 270 IC = 27A
Gate - Emitter Charge (turn-on) — 24 36 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 63 95 VGE = 15V
Turn-On Delay Time — 46 —
Rise Time — 33 — TJ = 25°C
Turn-Off Delay Time — 120 180 IC = 27A, VCC = 480V

ns

Fall Time — 57 86 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 0.08 — Energy losses include "tail"
Turn-Off Switching Loss — 0.32 — mJ See Fig. 9, 10, 14
Total Switching Loss — 0.40 0.5
Turn-On Delay Time — 31 — TJ = 150°C,
Rise Time — 43 — IC = 27A, VCC = 480V
Turn-Off Delay Time — 210 — VGE = 15V, RG = 5.0Ω

ns

Fall Time — 62 — Energy losses include "tail"
Total Switching Loss — 1.14 — mJ See Fig. 10,11, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 3700 — VGE = 0V
Output Capacitance — 260 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 68 —ƒ = 1.0MHz

Q Repetitive rating; V

= 20V, pulse width limited by

GE

max. junction temperature. ( See fig. 13b )

R V

CC

(See fig. 13a)

= 80%(V

CES

), V

= 20V, L = 10µH, RG = 5.0Ω,

GE

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.

U Pulse width 5.0µs, single shot.

S Repetitive rating; pulse width limited by maximum

junction temperature.

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IRG4PC50W

)

100

80

60

40

Square wave:

60% of rated
voltage

For both:

Duty cycle: 50%
T = 125°C

J

T = 90 °C

sink

Gate drive as specified

Power D issipation = 40W

Triangular wave:

Clamp voltage:
80% of rated

Load Current ( A )

20

0

0.1 1 10 100 1000

Ideal diodes

f, Frequency (kHz

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

A

1000

100

°

T = 150 C



J

°

T = 25 C



CE

J

V = 15V



20µs PULSE WIDTH

GE

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

1000

100



10

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11

°

T = 150 C

J

°

T = 25 C



J

V = 50V

CC



5µs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PC50W

60

50

40

30

20

10

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1

3.0

V = 15V

GE



80 us PULSE WIDTH



I = A54

C

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J



I = A27

C



I = A13.5

C

°

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

0.50

thJC

0.20

0.1

0.10

0.05

0.02

0.01

0.01

SINGLE PULSE



(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

0.001

0.00001 0.0001 0.001 0.01 0.1 1

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

P

DM

t



1 2

1

t

2

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4PC50W

8000

6000

4000

C, Capacitance (pF)

2000

0

1 10 100

V

=

0V,

GE

C

=

iesgegc , ce

C

=

resgc



C

=

oes cegc

C



ies

C



oes

C



res

V , Collector-to-Emitter Voltage (V)

CE

f = 1MHz

C

+ C
C
C

C SHORTED

+ C

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

3.0

V = 480V

CC

V = 15V

GE

T = 25 C

J



I = 27A

C

2.0

°

20

V = 400V

CC



I = 27A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 40 80 120 160 200

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

5.0Ω

R = Ohm

G

V = 15V

GE



V = 480V

CC



I = A

C

54



I = A

27

C



I = A

13.5

C

°

1.0

Total Switching Losses (mJ)

0.0
0 10 20 30 40 50

R

, Gate Resistance ( Ω )

R , Gate Resistance (Ohm)

G

G

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

1

Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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IRG4PC50W

3.0

R = Ohm

5.0Ω

G

T = 150 C

J

V = 480V

CC



V = 15V

GE

2.0

1.0

Total Switching Losses (mJ)

0.0
0 10 20 30 40 50 60

°

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V = 20V

GE



T = 125 C

J

100

10

C

I , Collector-to-Emitter Current (A)

SAFE OPERATING AREA



1

1 10 100 1000

o

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

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IRG4PC50W

y

p

)

p

ply, p

50V

Q

* Driver same t
* Note: Due to the 50V power su
will in crease to ob ta in ra ted Id.

e as D.U.T.; Vc = 80% o f Vce(max

Fig. 13a - Clamped Inductive

Load Test Circuit

50V

1000V

Q

1000V

L

V *

C

ulse width and inductor

D.U.T.

L

Driver*

R

480V

RL =

4

0 - 480V

480µF
960V

X IC@25°C

R

Fig. 13b - Pulsed Collector

Current Test Circuit

I

C

V

C

S

D.U.T.

Fig. 14a - Switching Loss

Test Circuit

* Driver same type
as D.U.T., VC = 480V

Q

R

90%

S

V

C

90%

10%

5%

I

C

t

d(on)

10%

t

r

E

on

t

d(off)

E = (E +E )

ts on off

Fig. 14b - Switching Loss

Waveforms

t

f

E

off

t=5µ s

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IRG4PC50W

(

)

Case Outline and Dimensions — TO-247AC

20.30 (.800)

19.70 (.775)

14.80 (.583)

14.20 (.559)

2.40 (.094)

2.00 (.079)

2X

5.45 (.215 )

2X

15.90 (.626)

15.30 (.602)

- B -

1

23

- D -

5.30 (.209)

4.70 (.185)

2.50 (.089)

1.50 (.059)

3X

2.60 (.102)

2.20 (.087)

4

0.80 (.031)

0.40 (.016)

3X

3.40 (.133)

3.00 (.118)

3.65 (.143 )

3.55 (.140 )

0.25 (.010)

- A -

5.50 (.217)

2X

- C -

4.30 (.170)

3.70 (.145)

1.40 (.056)

1.00 (.039)

0.25 (.010)

5.50 (.217)

4.50 (.177)

M

C

M

M

D

B

S

A

CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)

Dimensions in Millimeters and (Inches)

NOTES:
1 DIMENSIONS & TOLERANCING
PER AN SI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 D IM E NS IO N S A RE S H O W N
MILLIM E T ER S
4 C O N FO R M S T O JE D EC O U T LIN E
TO-247AC.

LEAD ASSIGNMENTS
1 - G A T E
2 - C O LL E C TO R
3 - E M IT TE R
4 - C O LL E C TO R

LONGER LEADED (20mm)

*

VERSION AVAILABLE (TO-247AD
TO ORDER ADD "-E" SUFFIX
TO PART NUMBER

INCHES).

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Data and specifications subject to change without notice. 6/00

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Note: For the most current drawings please refer to the IR website at:

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