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PD -95186
TO-247AC
IRG4PC50UPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
UltraFast Speed IGBT
C
V
CES
= 600V
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Lead-Free
G
E
n-channel
V
CE(on) typ.
= 1.65V
@VGE = 15V, IC = 27A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 55
IC @ TC = 100°C Continuous Collector Current 27 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector Current Q 220
Clamped Inductive Load Current R 220
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 20 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
W
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 6 (0.21) ---- g (oz)
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Junction-to-Case ---- 0.64
Case-to-Sink, Flat, Greased Surface 0.24 ---- °C/W
Junction-to-Ambient, typical socket mount ---- 40
04/26/04
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IRG4PC50UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 ---- ---- V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°C VGE = 0V, IC = 1.0mA
J
---- 1.65 2.0 IC = 27A VGE = 15V
Collector-to-Emitter Saturation Voltage ---- 2.0 ---- IC = 55A See Fig.2, 5
---- 1.6 ---- I
V
= 27A , TJ = 150°C
C
Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
Forward Transconductance U 16 24 ---- S VCE ≥ 15V, IC = 27A
Zero Gate Voltage Collector Current
---- ---- 250 VGE = 0V, VCE = 600V
---- ---- 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
---- ---- 5000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ---- ---- ±100 n A VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) ---- 180 270 IC = 27A
Gate - Emitter Charge (turn-on) ---- 25 38 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) ---- 61 90 VGE = 15V
Turn-On Delay Time ---- 32 ---Rise Time ---- 20 ---- TJ = 25°C
Turn-Off Delay Time ---- 170 260 IC = 27A, VCC = 480V
ns
Fall Time ---- 88 130 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss ---- 0.12 ---- Energy losses include "tail"
Turn-Off Switching Loss ---- 0.54 ---- mJ See Fig. 10, 11, 13, 14
Total Switching Loss ---- 0.66 0.9
Turn-On Delay Time ---- 31 ---- TJ = 150°C,
Rise Time ---- 23 ---- IC = 27A, VCC = 480V
Turn-Off Delay Time ---- 230 ---- VGE = 15V, RG = 5.0Ω
ns
Fall Time ---- 120 ---- Energy losses include "tail"
Total Switching Loss ---- 1.6 ---- mJ See Fig. 13, 14
Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
Input Capacitance ---- 4000 ---- VGE = 0V
Output Capacitance ---- 250 ---- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ---- 52 ---- ƒ = 1.0MHz
Q Repetitive rating; V
= 20V, pulse width limited by
GE
max. junction temperature. ( See fig. 13b )
R V
CC
(See fig. 13a)
= 80%(V
CES
), V
= 20V, L = 10µH, RG = 5.0Ω,
GE
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4PC50UPbF
)
µ
)
)
A
80
60
40
Square wave:
60% of rated
volta ge
For both:
Duty cycle: 50%
T = 125°C
J
T = 9 0°C
sink
Gate drive as specified
Pow er Dissip atio n = 40W
Triangular wave:
Clamp voltage:
80% of rated
Load Current (A)
20
Ideal diodes
0
0.1 1 10 100
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
1000
of fundamental; for triangular wave, I=IPK)
RMS
1000
100
100
T = 150°C
T = 150°C
10
1
C
I , Collector-to-Emitter Current (A)
0.1
0110
V , Co llector-to-Emitter Vo ltage (V
CE
J
T = 25°C
J
V = 1 5V
GE
20
s PULSE WIDTH
A
Fig. 2 - Typical Output Characteristics
C
I , Collector-to-Em itter Current (A)
Fig. 3 - Typical Transfer Characteristics
J
T = 25°C
10
1
4 6 8 10 12
V , Gate-to-Emitter Voltage (V
GE
J
V = 10V
CC
5µs PULSE WIDTH
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A
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IRG4PC50UPbF
A
)
60
50
40
30
20
10
Maximu m DC C ollector Cu rrent (A )
0
25 50 75 100 125 150
T , Case Temperature (°C)
C
V = 15V
GE
Fig. 4 - Maximum Collector Current vs. Case
Temperature
1
2.5
V = 15V
GE
80µs PULSE WIDTH
I = 54A
C
2.0
I = 27A
C
1.5
I = 14 A
C
CE
V , C ollector-to-E m itter V oltage (V)
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C
J
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
D = 0.50
thJC
0.20
0.1
0.10
0.05
SIN G LE P U LS E
Th erma l Re spon se (Z )
0.02
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Note s:
1. D uty fact or D = t / t
2. Pe ak T = P x Z + T
DM
J
P
DM
t
1
t
2
2
1
thJC
C
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PC50UPbF
)
A
g
)
A
A
)
(
)
8000
6000
4000
C, Capacitance (pF)
2000
0
1 10 100
V = 0 V, f = 1M Hz
GE
C = C + C , C SH O R TE D
ie s g e g c ce
C = C
res gc
C = C + C
o es c e g c
C
ie s
C
oes
C
res
V , Co llector-to-Emitter Vo ltage (V
CE
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
2.2
V = 480V
CC
V = 15V
GE
2.0
T = 25°C
J
I = 27A
C
1.8
20
V = 400V
CE
I = 27A
C
16
12
8
4
GE
V , Gate-to-Emitter Voltage (V)
0
0 40 80 120 160 200
Q , Total Gate Charge (nC
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
R = 5.0
V = 15 V
V = 48 0 V
G
GE
CC
Ω
I = 5 4A
C
I = 2 7A
1.6
1.4
1.2
1.0
Total Switching Losses (mJ)
0.8
0.6
0 102030405060
R , Gate Resistance
G
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
1
Total S w it ching Los s e s (m J)
A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C
J
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
C
I = 1 4 A
C
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IRG4PC50UPbF
)
A
3.0
R = 5.0
T = 150°C
V = 480V
V = 15 V
2.0
1.0
G
J
CC
GE
Ω
Total S witc hing Losses (m J)
0.0
0 1020304050
I , Collecto r-to-Em itter Current (A
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
V = 2 0V
GE
GE
T = 125°C
J
100
10
C
I , C ollector-to -E m itter Cu rre nt (A )
1
1 10 100 1000
V , Collector-to-Emitter Voltage (V)
SAFE OPERATING AREA
CE
Fig. 12 - Turn-Off SOA
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IRG4PC50UPbF
y
p
)
p
ply, p
50V
Q
* Driver same t
* Note: Due to the 50V power su
w ill increase to obtain rated Id.
e as D.U.T.; Vc = 80% of Vce(max
Fig. 13a - Clamped Inductive
Load Test Circuit
50V
1000V
Q
1000V
L
V *
C
ulse width and inductor
D.U.T.
L
Driver*
R
480V
RL =
X IC@25°C
0 - 480V
480µF
960V
4
R
Fig. 13b - Pulsed Collector
Current Test Circuit
I
C
V
C
S
D.U.T.
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
Q
R
90%
S
V
C
90%
10%
5%
I
C
t
d(on)
10%
t
r
E
on
t
d(off)
E = (E +E )
ts on off
Fig. 14b - Switching Loss
Waveforms
t
f
E
off
t=5µ s
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IRG4PC50UPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
8 www.irf.com
T HIS IS AN IR F PE 30
WIT H ASS E MBL Y
LOT CODE 5657
AS S EMBL E D ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
Data and specifications subject to change without notice. 04/04
INT ERNATIONAL
RE CTIFIE R
LOGO
ASSEMBLY
LOT CODE
IRF PE30
035H
56 57
PART NUMBER
DAT E CODE
YE AR 0 = 2000
WEE K 3 5
LINE H
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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