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PD - 91581B
IRG4PC50S-P
INSULATED GATE BIPOLAR TRANSISTOR
FeaturesFeatures
Features
FeaturesFeatures
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Standard Speed IGBT
C
V
CES
= 600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Surface Mountable
G
E
V
CE(on) typ.
= 1.28V
@VGE = 15V, IC = 41A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Surface Mountable
TO-247
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 70
IC @ TC = 100°C Continuous Collector Current 41 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector Current Q 140
Clamped Inductive Load Current R 140
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 20 mJ
Operating Junction and -55 to + 150
Storage Temperature Range ° C
Max Reflow Temperature 225
W
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.64
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40
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IRG4PC50S-P
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA
J
— 1.28 1.36 IC = 41A VGE = 15V
Collector-to-Emitter Saturation Voltage — 1.62 — IC = 80 A See Fig.2, 5
— 1.28 — IC = 41A , TJ = 150°C
V
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -9.3 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance U 17 34 — S VCE = 100V, IC = 41A
Zero Gate Voltage Collector Current
— — 250 V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
= 0V, VCE = 600V
GE
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 180 280 IC = 41A
Gate - Emitter Charge (turn-on) — 24 37 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 61 92 VGE = 15V
Turn-On Delay Time — 33 —
Rise Time — 30 — TJ = 25°C
Turn-Off Delay Time — 650 980 IC = 41A, VCC = 480V
ns
Fall Time — 400 600 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 0.72 — Energy losses include "tail"
Turn-Off Switching Loss — 8.27 — mJ See Fig. 9, 10, 14
Total Switching Loss — 8.99 13
Turn-On Delay Time — 31 — TJ = 150°C,
Rise Time — 31 — IC = 41A, VCC = 480V
Turn-Off Delay Time — 1080 — VGE = 15V, RG = 5.0Ω
ns
Fall Time — 620 — Energy losses include "tail"
Total Switching Loss — 15 — mJ See Fig. 11, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 4100 — VGE = 0V
Output Capacitance — 250 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 48 — ƒ = 1.0MHz
Q Repetitive rating; V
= 20V, pulse width limited by
GE
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
U Pulse width 5.0µs, single shot.
R V
= 80%(V
CC
(See fig. 13a)
CES
), V
= 20V, L = 10µH, RG = 5.0Ω,
GE
S Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4PC50S-P
)
100
80
60
Square wave:
60% of rated
40
Load Current ( A )
20
0
0.1 1 10 100
voltage
I
Ideal diodes
For both:
D uty cy cle: 50%
T = 125° C
J
T = 90 °C
sink
Gate drive as specified
Power Dissipation = 40W
Triangular wave:
I
Clamp vo ltage:
80% of rated
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
A
1000
100
10
o
T = 150 C
J
C
I , Collector-to-Emitter Current (A)
1
0.1 1 10
V , Collector-to-Emitter Voltage (V)
CE
o
T = 25 C
J
V = 15V
GE
20µs PULSE WIDTH
1000
100
o
T = 150 C
J
10
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10
V , Gate-to-Emitter Voltage (V)
GE
o
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
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IRG4PC50S-P
80
60
40
20
LIMIT ED BY P A CKAGE
V = 15V
GE
Maximum DC Collector Current (A)
0
25 50 75 100 125 150
T , Case Temperature (°C)
C
Fig. 4 - Maximum Collector Current vs. Case
Temperature
1
2.2
V = 15V
GE
80 us PULSE WIDTH
2.0
1.8
1.6
1.4
1.2
1.0
CE
V , Collector-to-Emitter Voltage(V)
0.8
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
I = A82
C
I = A41
C
I = A20.5
C
°
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
0.50
thJC
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1 2
1
t
2
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PC50S-P
8000
6000
4000
C, Capacitance (pF)
2000
0
1 10 100
V
=
0V,
GE
C
=
iesgegc , ce
C
=
resgc
C
=
oes cegc
C
ies
C
oes
C
res
V , Collector-to-Emitter Voltage (V)
CE
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10.0
V = 480V
CC
V = 15V
GE
T = 25 C
J
I = 41A
C
°
20
V = 400V
CC
I = 41A
C
16
12
8
4
GE
V , Gate-to-Emitter Voltage (V)
0
0 40 80 120 160 200
Q , Total Gate Charge (nC)
G
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
5.0Ω
R = Ohm
G
V = 15V
GE
V = 480V
CC
I = A
C
82
9.5
9.0
Total Switching Losses (mJ)
8.5
0 10 20 30 40 50
R
, Gate Resistance ( Ω )
R , Gate Resistance (Ohm)
G
G
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
10
Total Switching Losses (mJ)
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C )
J
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
I = A
41
C
I = A
20.5
C
°
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IRG4PC50S-P
40
30
20
10
Total Switching Losses (mJ)
0
0 20 40 60 80 100
5.0Ω
R = Ohm
G
T = 150 C
J
V = 480V
CC
V = 15V
GE
°
I , Collector-to-emitter Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
V = 20V
GE
T = 125 C
J
100
10
C
I , Collector-to-Emitter Current (A)
SAFE OPERATING AREA
1
1 10 100 1000
o
V , Collector-to-Emitter Voltage (V)
CE
Fig. 12 - Turn-Off SOA
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IRG4PC50S-P
y
p
)
p
ply, p
50V
Q
* Driver same t
* Note: D ue to the 50V pow er s u
will in crease t o ob tain rated Id.
e as D .U.T.; Vc = 80% o f V ce(max
Fig. 13a - Clamped Inductive
Load Test Circuit
50V
1000V
Q
1000V
L
V *
C
ulse width and inductor
D.U.T.
L
Driver*
R
480V
RL =
X IC@25°C
0 - 480V
480µF
960V
4
R
Fig. 13b - Pulsed Collector
Current Test Circuit
I
C
V
C
S
D.U.T.
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
Q
R
90%
S
V
C
90%
10%
5%
I
C
t
d(on)
10%
t
r
E
on
t
d(off)
E = (E +E )
ts o n off
Fig. 14b - Switching Loss
Waveforms
t
f
E
off
t=5µ s
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IRG4PC50S-P
A
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- A -
5.50 (.217 )
2X
- C -
4.30 (.170)
3.70 (.145)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3.65 (.143)
3.55 (.140)
0.25 (.010)
5.50 (.217)
4.50 (.177)
M
D
MM
CA
S
20.30 (.800)
19.70 (.775)
14.80 (.583)
14.20 (.559)
2.40 (.094 )
2.00 (.079 )
2X
5.45 (.215)
2X
15.90 (.626)
15.30 (.602)
- B -
123
3X
3.40 (.133)
3.00 (.118)
TO-247AC Part Marking Information
EXAMPLE : THIS IS AN IRFPE30
W ITH ASSEMBLY
L O T C O D E 3 A 1 Q
IN T E R NA T ION A L
R E CT IF IE R
LO G O
A S S EM BL Y
LOT CODE
B
- D -
2.50 (.089)
1.50 (.059)
3X
2.60 (.102)
2.20 (.087)
IR FPE 3 0
3A1Q 9302
5.30 (.209)
4.70 (.185)
4
NOTES:
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONF ORMS TO JEDEC OUTLINE
TO-247-AC.
0.80 (.031)
0.40 (.016)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
PART NUMBER
DATE CODE
(YY W W )
Y Y = Y E AR
WW WEEK
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/02
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