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PD -91582B
IRG4PC50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
● Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz, and Short Circuit Rated
to 10µs @125°C, VGE = 15V
● Generation 4 IGBT design provides tighter parameter
G
distribution and higher efficiency than Generation 3
● IGBT co-packaged with HEXFRED
ultra-soft recovery anti-parallel diodes for use in
TM
ultrafast,
n-channel
bridge configurations
● Industry standard TO-247AC package
Benefits
● Generation 4 IGBTs offer highest efficiencies available
● HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less/no snubbing
● Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 52
IC @ TC = 100°C Continuous Collector Current 30
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 25
I
FM
t
sc
V
GE
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current
Clamped Inductive Load Current
Diode Maximum Forward Current 280
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
➀➀
➀ 104 A
➀➀
➁➁
➁ 104
➁➁
C
E
Short Circuit Rated
UltraFast IGBT
V
= 600V
CES
V
CE(on) typ.
@VGE = 15V, IC = 30A
= 1.84V
TO-247AC
W
Thermal Resistance
Parameter Min. Typ. Max. Units
R
qJC
R
qJC
R
qCS
R
qJA
Wt Weight — 6 (0.21) — g (oz)
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Junction-to-Case - IGBT — — 0.64
Junction-to-Case - Diode — — 0.83 °C/W
Case-to-Sink, flat, greased surface — 0.24 —
Junction-to-Ambient, typical socket mount — — 40
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IRG4PC50KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
DV
(BR)CES
V
CE(on)
V
GE(th)
DV
GE(th)
g
fe
I
CES
V
FM
I
GES
Collector-to-Emitter Breakdown Voltage
/DT
Temperature Coeff. of Breakdown Voltage — 0.47 — V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage — 1.84 2.2 IC = 30A VGE = 15V
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/DTJTemperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance
➃➃
➃ 17 24 — S VCE = 100V, IC = 30A
➃➃
Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V
Diode Forward Voltage Drop — 1.3 1.7 V IC = 25A see figure 13
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
2
Total Gate Charge (turn-on) — 200 300 IC = 30A
Gate - Emitter Charge (turn-on) — 25 38 nC VCC = 400V see figure 8
Gate - Collector Charge (turn-on) — 85 127 VGE = 15V
Turn-On Delay Time — 63 —
Rise Time — 49 — TJ = 25°C
Turn-Off Delay Time — 150 220 IC = 30A, VCC = 480V
Fall Time — 95 140 VGE = 15V, RG = 5.0W
Turn-On Switching Loss — 1.61 — Energy losses include "tail"
Turn-Off Switching Loss — 0.84 — mJ and diode reverse recovery
Total Switching Loss — 2.45 3.0see figures 9,10,18
Short Circuit Withstand Time 10 — — µs VCC = 360V, TJ = 125°C
Turn-On Delay Time — 61 — TJ = 150°C, see figures 11,18
Rise Time — 46 — IC = 30A, VCC = 480V
Turn-Off Delay Time — 310 — VGE = 15V, RG = 5.0W
Fall Time — 170 — Energy losses include "tail"
Total Switching Loss — 3.53 — mJ and diode reverse recovery
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 3200 — VGE = 0V
Output Capacitance — 370 — pF VCC = 30V see figure 7
Reverse Transfer Capacitance — 95 — ƒ = 1.0MHz
Diode Reverse Recovery Time — 50 75 ns TJ = 25°C see figure
Diode Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C see figure
Diode Reverse Recovery Charge — 112 375 nC TJ = 25°C see figure
/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C see figure
During t
b
➂➂
➂ 600 — — V VGE = 0V, IC = 250µA
➂➂
— 2.19 — V IC = 52A see figures 2, 5
— 1.79 — IC = 25A, TJ = 150°C
— — 6500 VGE = 0V, VCE = 600V, TJ = 150°C
— 1.2 1.5 IC = 25A, TJ = 150°C
ns
VGE = 15V, RG = 10W , V
ns
— 105 160 TJ = 125°C 14 IF = 25A
— 8.0 15 TJ = 125°C 15 VR = 200V
— 420 1200 TJ = 125°C 16 di/dt 200A/µs
— 160 — TJ = 125°C 17
< 500V
CPK
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IRG4PC50KD
35
30
25
20
15
10
LOAD CURRENT (A)
Square wave:
60% of rated
v o l ta g e
I
5
0
0.1 1 10 100
Ideal diodes
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
For both:
Duty cycle: 50%
T = 125°C
J
T = 9 0 °C
sink
Gate drive as specified
Po w e r Dis s ipa tion = W
40
1000
°
T = 25 C
100
10
C
I , Collector-to-Emitter Current (A)
1
1 10
J
T = 150 C
J
V = 15V
20µs PULSE WIDTH
V , Collector-to-Emitter Voltage (V)
CE
Fig. 2 - Typical Output Characteristics
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GE
°
150°C
1000
100
T = 150 C
10
C
I , Collector-to-Emitter Current (A)
1
5 6 7 8 9 10 11 12
V , Gate-to-Emitter Voltage (V)
GE
°
J
°
T = 25 C
J
V = 50V
CC
5µs PULSE WIDTH
Fig. 3 - Typical Transfer Characteristics
3
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IRG4PC50KD
)
60
50
40
30
20
10
Maximum DC Collector Current(A)
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig. 4 - Maximum Collector Current vs.
Case Temperature
1
3.0
V = 15V
GE
80 us PULSE WIDTH
I = A60
C
2.0
CE
V , Collector-to-Emitter Voltage(V)
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
I = A30
C
I = A15
C
°
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
0.50
thJC
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
Thermal Response (Z )
Notes:
1. Duty factor D =t / t
0.001
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec
1
2. Peak T=P x Z + T
1 2
J DM thJC C
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
t
2
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IRG4PC50KD
5000
4000
3000
2000
V
=
0V,
GE
C
=
ies ge gc , ce
C
=
res gc
C
=
oes ce gc
f = 1MHz
C
+ C
C
C
+ C
C
ies
C SHORTED
C, Capacitance (pF)
1000
C
oes
C
0
1 10 100
V , Collector-to-Emitter Voltage (V)
CE
res
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
4.5
V = 480V
CC
V = 15V
GE
T = 25 C
J
I = 30A
4.0
C
3.5
3.0
°
20
V = 400V
CC
I = 30A
C
16
12
8
4
GE
V , Gate-to-Emitter Voltage (V)
0
0 40 80 120 160 200
Q , Total Gate Charge (nC)
G
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
10
1
5.0W
R = Ohm
G
V = 15V
GE
V = 480V
CC
I = A
I = A
I = A
60
C
30
C
15
C
2.5
Total Switching Losses (mJ)
2.0
0 10 20 30 40 50
RG, Gate Resistance ( W )
Fig. 9 - Typical Switching Losses vs.
Gate Resistance
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Total Switching Losses (mJ)
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C )
J
°
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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IRG4PC50KD
12
10
8
6
4
Total Switching Losses (mJ)
2
0
5.0W
R = Ohm
G
T = 150 C
J
V = 480V
CC
V = 15V
GE
0 10 20 30 40 50 60 70
°
I , Collector-to-emitter Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
F
T = 150°C
J
T = 125°C
J
10
T = 2 5°C
J
1000
V = 20V
GE
T = 125 C
J
100
C
I , Collector-to-Emitter Current (A)
10
1 10 100 1000
o
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
CE
Fig. 12 - Turn-Off SOA
140
V = 200V
R
T = 125°C
J
T = 25°C
120
100
J
Ins ta nta n e o u s F orw a rd Cu rre nt - I (A)
1
0.6 1.0 1.4 1.8 2.2 2.6
Forward Voltage Dro p - V (V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
6
I = 50A
80
rr
t - (ns)
F
I = 25A
F
I = 10A
F
60
40
20
100 1000
di /dt - (A/µs)
f
Fig. 14 - Typical Reverse Recovery vs. dif/dt
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IRG4PC50KD
100
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 5 0A
F
I = 25 A
F
10
IRRM
I - ( A )
1
100 1000
di /d t - (A/µ s )
f
I = 10A
F
1500
V = 200V
R
T = 125°C
J
T = 25°C
J
1200
900
I = 50 A
F
RR
Q - ( n C )
600
I = 2 5A
F
300
I = 10A
F
0
100 1000
di /d t - (A/µ s)
f
Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 16 - Typical Stored Charge vs. dif/dt
10000
V = 200V
R
T = 125°C
J
T = 25°C
J
Mechanical drawings, Appendix A
Test Circuit diagrams, Appendix B
Switching Loss Waveforms, Appendix C
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I = 10 A
1000
F
di(re c )M /d t - (A /µ s)
I = 50 A
100
100 1000
Fig. 17 - Typical di
F
di /d t - (A/µ s)
f
/dt vs. dif/dt
(rec)M
I = 25A
F
7
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IRG4PC50KD
g
g
Same type
device as
D.U.T.
80%
of Vce
430µF
D.U.T.
Fig. 18a - Test Circuit for Measurement of
I
, Eon, E
LM
Vcc
10% +V
10% Ic
td(on)
off(diode)
Vce
t1
, trr, Qrr, Irr, t
90% Ic
5% Vce
tr
, tr, t
d(on)
GATE VOLTAGE D.U.T.
+V
, t
d(off)
DUT VOLTAGE
AND CURRENT
Ipk
t2
Vce ie dt
Eon =
Vce Ic dt
∫
t1
t2
V
ge
V
C
90%
10%
5%
I
C
t
d(on)
f
10%
t
r
E
on
E = (E +E )
90%
t
d(off)
ts on off
t
f
E
off
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
E
, t
d(off)
t3
, t
f
trr
Qrr =
10% Irr
DIODE RECOVERY
W AVEFORM S
t4
Erec =
Vd id dt
Vd Ic dt
∫
t3
t4
off
Ic
tx
10% Vcc
Vpk
Ic
DIODE REVERSE
RECOVERY ENERG Y
Irr
∫
trr
id d t
Ic dt
tx
t=5µs
Vcc
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, t
8
d(on)
, t
r
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E
, trr, Qrr, I
rec
rr
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V
g
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
IRG4PC50KD
t0
t1
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
50V
6000µF
100V
1000V
L
V *
c
Figure 19. Clamped Inductive Load Test Circuit
t2
RL=
0 - 800V
800V
4 X IC @25°C
Figure 20. Pulsed Collector Current
Test Circuit
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IRG4PC50KD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
=80%(V
V
CC
Pulse width £ 80µs; duty factor £ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline TO-247AC
), VGE=20V, L=10µH, RG= 5.0 W (figure 19)
CES
20.30 (.800)
19.70 (.775)
14.80 (.583)
*
14.20 (.559)
2.40 (.094 )
2.00 (.079 )
2X
5.45 (.215)
2X
15.90 (.626)
15.30 (.602)
- B -
1
2
3.65 (.143)
3.55 (.140)
M
0.25 (.010)
- A -
5.50 (.217)
5.50 (.217)
2X
4.50 (.177)
3
- C -
4.30 (.170)
3.70 (.145)
1.40 (.056)
3X
1.00 (.039)
M
0.25 (.010)
3.40 (.133)
3.00 (.118)
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
C
Dimens ions in Millime te r s a n d ( In c h e s )
M
D
B
S
A
- D -
2.50 (.089)
1.50 (.059)
3X
2.60 (.102)
2.20 (.087)
5.30 (.209)
4.70 (.185)
4
0.80 (.031 )
0.40 (.016 )
NOTES:
1 DIMENSIONS & TOLERANCING
PER ANS I Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS ARE SHOW N
M ILLIMETERS (INCHES).
4 CON F ORM S TO JEDEC O U TLINE
TO-247 A C.
LEAD ASSIGNMENTS
1 - GAT E
2 - COLLECTO R
3 - EMIT T ER
4 - COLLECTO R
LONGER LEADED (20mm)
*
VERSION AVAILABLE (TO-247AD)
TO ORDER ADD "-E" SUFFIX
TO PART NU MB ER
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 12/98
10
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