Datasheet irg4pc50fd Datasheet

PD 91469B

TO-247AC

IRG4PC50FD

INSULATED GATE BIPOLAR TRANSISTOR WITH

Fast CoPack IGBT

ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

FeaturesFeatures

• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFRED

TM

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

G

n-channel

bridge configurations

• Industry standard TO-247AC package

Benefits

• Generation -4 IGBT's offer highest efficiencies available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing

• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 70 IC @ TC = 100°C Continuous Collector Current 39 I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 25 I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 200 PD @ TC = 100°C Maximum Power Dissipation 78 T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current Q 280 A Clamped Inductive Load Current R 280

Diode Maximum Forward Current 280 Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight ------ 6 (0.21) ------ g (oz)

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Junction-to-Case - IGBT ------ ------ 0.64 Junction-to-Case - Diode ------ ------ 0.83 °C/W Case-to-Sink, flat, greased surface ------ 0.24 -----Junction-to-Ambient, typical socket mount ----- ----- 40

C

V

= 600V

CES

V

CE(on) typ.

E

@VGE = 15V, IC = 39A

= 1.45V

W

12/30/00

IRG4PC50FD

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown VoltageS 600 ---- ---- V VGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage ---- 0.62 ---- V/°CVGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage ---- 1.45 1.6 IC = 39A VGE = 15V

---- 1.79 ---- V IC = 70A See Fig. 2, 5

---- 1.53 ---- IC = 39A, TJ = 150°C V ∆V g I

V

CES

GE(th)

fe

FM

Gate Threshold Voltage 3.0 ---- 6 .0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage ---- -14 ---- mV/°CVCE = VGE, IC = 250µA

Forward Transconductance T 21 30 ---- S VCE = 100V, IC = 39A Zero Gate Voltage Collector Current ---- ---- 2 50 µ A VGE = 0V, VCE = 600V

---- ---- 6500 V

= 0V, VCE = 600V, TJ = 150°C

GE

Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 25A See Fig. 13

---- 1.2 1.5 IC = 25A, TJ = 150°C I

GES

Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Qge Gate - Emitter Charge (turn-on) ---- 28 42 nC VCC = 400V See Fig. 8 Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

Total Gate Charge (turn-on) ---- 190 290 IC = 39A

Gate - Collector Charge (turn-on) ---- 65 97 VGE = 15V Turn-On Delay Time ---- 55 ---- TJ = 25°C Rise Time ---- 25 ---- ns IC = 39A, VCC = 480V Turn-Off Delay Time ---- 240 360 VGE = 15V, RG = 5.0Ω Fall Time ---- 140 210 Energy losses include "tail" and Turn-On Switching Loss ---- 1.5 ---- diode reverse recovery. Turn-Off Switching Loss ---- 2.4 ---- mJ See Fig. 9, 10, 11, 18 Total Switching Loss ---- 3.9 5.0 Turn-On Delay Time ---- 59 ---- TJ = 150°C, See Fig. 9, 10, 11, 18 Rise Time ---- 27 ---- ns IC = 39A, VCC = 480V Turn-Off Delay Time ---- 400 ---- VGE = 15V, RG = 5.0Ω Fall Time ---- 260 ---- Energy losses include "tail" and Total Switching Loss ---- 6.5 ---- mJ diode reverse recovery. Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package Input Capacitance ---- 4100 ---- VGE = 0V Output Capacitance ---- 250 ---- pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance ---- 49 ---- ƒ = 1.0MHz Diode Reverse Recovery Time ---- 50 75 ns TJ = 25°C See Fig.

---- 105 160 TJ = 125°C 14 IF = 25A

Diode Peak Reverse Recovery Current ---- 4 . 5 10 A TJ = 25°C See Fig.

---- 8.0 15 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge ---- 112 375 nC TJ = 25°C See Fig.

---- 420 1200 TJ = 125°C 16 di/dt 200A/µs

/dt Diode Peak Rate of Fall of Recovery ---- 250 ---- A/µs TJ = 25°C See Fig.

During t

b

---- 160 ---- TJ = 125°C 17

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50

)

µ

)

40

30

60% of rate d vo lta g e

20

Load Current ( A )

10

IRG4PC50FD

Duty cycle: 50% T = 125°C

J

T = 9 0 °C

sink

Ga te drive as spe cified Turn-on losses includ e effects of reverse recovery

Power Dissipation = 40W

0

0.1 1 10 100

f, Frequency (kHz

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

1000

100

T = 150°C

10

C

I , Co llector-to-Em itter Curre nt (A)

1

0.1 1 10

V , Colle cto r-to-E mitter V o ltage (V

CE

J

T = 25°C

J

V = 15V

GE

20

s PULSE WIDTH

of fundamental)

RMS

A

1000

100

T = 150°C

J

T = 25°C

J

10

C

I , Colle cto r-to -Emitter Cu rre n t (A)

1

5 6 7 8 9 101112

V , G ate -to-E mitter V o ltage (V

GE

V = 5 0 V

CC

5µs PULSE WIDTH

A

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

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IRG4PC50FD

A

)

70

60

50

40

30

20

10

M a xi m um D C Co ll e c to r C urre n t (A )

0

25 50 75 100 125 150

T , C ase Temperature (°C)

C

V = 15V

GE

Fig. 4 - Maximum Collector Current vs.

Case Temperature

1

2.5

V = 1 5 V

GE

80µs PULSE WIDTH

I = 78A

C

2.0

I = 39A

1.5

CE

V , C ollec tor-to- Emitter Volta ge (V )

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C

J

C

I = 2 0A

C

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

D = 0.50

thJC

0.20

0.1

0.10

0.05

Th e r mal R es pon s e (Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

SIN G L E PUL SE (THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

No te s:

1. D u ty fa cto r D = t / t

2. P e ak T = P x Z + T

DM

J

P

DM

t

1

t

2

1

th JC

C

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

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IRG4PC50FD

(

)

g

)

A

8000

6000

4000

VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce SHORTED Cres = Cce Coes = Cce + Cgc

C

ies

C

oes

C, Capacitance (pF)

2000

C

res

0

1 10 100

V , Collector-to-Emitter Voltage (V)

CE

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

5.00

V = 480V

CC

V = 1 5V

GE

T = 2 5°C

J

I = 39 A

C

20

V = 400V

CE

I = 39A

C

16

12

8

4

GE

V , Gate - to-E mitter Volta g e (V)

0

0 40 80 120 160 200

Q , To ta l G ate C h a rge (nC

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

R = 5 .0 V = 1 5V V = 480V

G GE CC

Ω

4.50

4.00

Total Switchig Losses (mJ)

3.50 0 102030405060

R , G a te R esis tanc e

G

Ω

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

10

Total Switchig Losses (mJ)

A

1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Tem perature (°C

J

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

I = 7 8A

C

I = 3 9A

C

I = 20A

C

www.irf .com 5

A

IRG4PC50FD

)

16

R = 5 .0 T = 1 50°C V = 480V V = 1 5V

12

8

4

Total Switchig Losses (mJ)

0

0 20406080

Fig. 11 - Typical Switching Losses vs.

Ω

G J CC GE

I , Collector -to-Em itter Curr ent (A

C

Collector-to-Emitter Current

100

1000

V = 2 0 V

GE

T = 12 5 °C

J

100

10

C

I , C o lle c to r - to -Em i tter C u r re n t ( A )

A

1

1 10 100 1000

V , C o l lec to r-to -Emitte r V o lta g e (V )

CE

SAFE OPERATING AREA

Fig. 12 - Turn-Off SOA

F

T = 15 0°C

J

T = 12 5°C

J

10

T = 25 °C

J

Instantaneous Forward Current - I (A)

1

0.6 1.0 1.4 1.8 2.2 2.6

Forward Voltage D ro p - V (V

FM

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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)

140

(A/µs)

120

V = 200V

R

T = 125°C

J

T = 25°C

J

100

IRG4PC50FD

V = 200V

R

T = 125°C

J

T = 25°C

J

100

I = 50A

80

rr

t - (ns)

F

I = 25A

F

I = 10A

F

60

40

20

100 1000

di /dt -

f

Fig. 14 - Typical Reverse Recovery vs. dif/dt

1500

V = 200V

R

T = 125°C

J

T = 25°C

J

1200

I = 50 A

F

I = 25 A

F

10

IRR M

I - (A )

1

100 1000

di /d t - (A/µs

f

I = 1 0 A

F

Fig. 15 - Typical Recovery Current vs. dif/dt

10000

V = 200V

R

T = 125 °C

J

T = 25°C

J

900

I = 50 A

F

1000

I = 10 A

F

RR

Q - (n C )

600

I = 2 5A

F

300

I = 1 0 A

F

0

100 1000

di /dt - (A/µs

f

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di

d i(rec )M /dt - (A/µ s)

I = 5 0 A

100

100 1000

F

di /d t - (A/µs

f

/dt vs. dif/dt

(rec)M

I = 25 A

F

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IRG4PC50FD

90% Vge

+Vge

Same type device as D.U.T.

80% of Vce

430µF

D.U.T.

Fig. 18a - Test Circuit for Measurement of

I

, Eon, E

LM

Vcc

10% +Vg

10% Ic

td(on)

off(diode)

Vce

t1

, trr, Qrr, Irr, t

90% Ic

5% Vc e

tr

, tr, t

d(on)

GATE VOLTAG E D.U.T.

+Vg

d(off)

DUT VO LTAGE AND CURRE NT

Ipk

Vce ie dt

Eon =

∫

t1

t2

Vce

10% Vce

Ic

td(off)

, t

f

t1

90% Ic

Ic

5% Ic

tf

Eoff =

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

, t

d(off)

t3

, t

f

trr

Qrr =

10% Irr

DIODE RECO V E RY W AVEFORMS

Erec =

∫

t4

E

off

Ic

tx

10% Vc c

Vpk

Ic

t2

DIO DE REVERSE RECOVERY ENERGY

Irr

t1+5 µ S

Vce ic dt

∫

t1

∫

tx

t4

Vd id dt

t3

trr

id dt

Vcc

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

d(on)

, t

r

on

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

rr

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Vg

GATE SIGNAL DEVICE UNDE R TE ST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

IRG4PC50FD

t0

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L

1000V

V *

c

50V

6000µF 100V

Figure 19. Clamped Inductive Load Test

Circuit

t1

t2

D.U.T.

RL=

0 - 480V

Figure 20. Pulsed Collector Current

Test Circuit

480V

4 X IC @25°C

www.irf .com 9

IRG4PC50FD

)

Notes:

Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R V

=80%(V

CC

S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot.

Case Outline  TO-247AC

), VGE=20V, L=10µH, RG = 5.0Ω (figure 19)

CES

20.30 (.800)

19.70 (.775)

14 .80 (.583)

*

14 .20 (.559)

2.40 (.094)

2.00 (.079)

5.45 (.215)

2X

15.90 (.626)

15.30 (.602)

- B -

1

23

- D -

2.50 (.0 89)

1.50 (.0 59)

3X

2.60 (.102)

2.20 (.087)

5.30 (.209)

4.70 (.185)

4

0.80 (.03 1)

0.40 (.01 6)

3X

0.25 (.010)

3.40 (.133)

3.00 (.118)

3.65 (.143)

3.55 (.140)

0.25 (.010)

- A -

5.50 (.2 17)

2X

- C -

4.30 (.1 70)

3.70 (.1 45)

1.40 (.0 56)

1.00 (.0 39)

M

5.50 (.217)

4.50 (.177)

M

A

C

M

D

B

S

CONFO RMS TO JEDE C OUTLINE T O-247AC (TO-3P)

Dimensions in Millimeters and (Inches)

NOTES: 1 DIMENSIONS & TOLERANCING PER AN S I Y14.5M, 1982. 2 CONTROLLING DIMENSIO N : INCH. 3 D IM EN S I ON S A RE SH OW N M IL L IM ET ERS (INC HE S). 4 C O NF O R M S T O J E D EC O U T L INE T O - 2 4 7A C .

LEAD ASSIGNM ENTS 1 - G A T E 2 - C OLLE C TO R 3 - E MIT TE R 4 - C OLLE C TO R

LONGER LEADED (20m m)

*

VERSION AVAILABLE (TO-247AD TO ORDER ADD "-E" SUFFIX TO PART NUM BER

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 12/00

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