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PD 91468C
TO-247AC
IRG4PC50F
INSULATED GATE BIPOLAR TRANSISTOR
FeaturesFeatures
Features
FeaturesFeatures
• Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
C
Fast Speed IGBT
= 600V
V
CES
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
G
E
V
CE(on) typ.
= 1.45V
@VGE = 15V, IC = 39A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 70
IC @ TC = 100°C Continuous Collector Current 39 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 600 V
Pulsed Collector Current Q 280
Clamped Inductive Load Current R 280
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 20 mJ
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
W
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 6 (0.21) ––– g (oz)
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Junction-to-Case ––– 0.64
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40
12/30/00
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IRG4PC50F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.62 — V/°CVGE = 0V, IC = 1.0mA
J
— 1.45 1.6 I
Collector-to-Emitter Saturation Voltage — 1.79 — IC = 70A See Fig.2, 5
— 1.53 — I
V
= 39A VGE = 15V
C
= 39A , TJ = 150°C
C
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -14 — mV/°CVCE = VGE, IC = 250µA
Forward Transconductance U 21 30 — SVCE = 100V, IC = 39A
Zero Gate Voltage Collector Current
——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
——2000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 190 290 IC = 39A
Gate - Emitter Charge (turn-on) — 28 42 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 65 97 VGE = 15V
Turn-On Delay Time — 31 —
Rise Time — 25 — TJ = 25°C
Turn-Off Delay Time — 240 350 IC = 39A, VCC = 480V
ns
Fall Time — 130 190 VGE = 15V, RG = 5.0Ω
Turn-On Switching Loss — 0.37 — Energy losses include "tail"
Turn-Off Switching Loss — 2.1 — mJ See Fig. 10, 11, 13, 14
Total Switching Loss — 2.47 3.0
Turn-On Delay Time — 28 — TJ = 150°C,
Rise Time — 24 — IC = 39A, VCC = 480V
Turn-Off Delay Time — 390 — VGE = 15V, RG = 5.0Ω
ns
Fall Time — 230 — Energy losses include "tail"
Total Switching Loss — 5.0 — mJ See Fig. 13, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 4100 — VGE = 0V
Output Capacitance — 250 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 49 —ƒ = 1.0MHz
Q Repetitive rating; V
= 20V, pulse width limited by
GE
max. junction temperature. ( See fig. 13b )
R V
CC
(See fig. 13a)
= 80%(V
CES
), V
= 20V, L = 10µH, RG = 5.0Ω,
GE
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4PC50F
)
A
)
µ
)
100
For both:
Duty cycle: 50%
T = 125 °C
80
60
40
Square wave:
60% of rated
voltage
J
T = 90 °C
sink
Gate drive as specified
Power Dissipation = 40W
Load Current (A)
Tri angular wave:
Clamp voltage:
80% of rated
20
0
0.1 1 10 100
Ideal diodes
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
1000
100
T = 150°C
10
C
I , Co llec tor-to-E mitter Cu rrent (A)
1
0.1 1 10
V , Colle cto r-to-E mitter V o ltage (V
CE
J
T = 25°C
J
V = 15V
GE
20
s PULSE WIDTH
of fundamental; for triangular wave, I=IPK)
RMS
1000
100
T = 150°C
J
10
C
I , Colle cto r-to -Emitter Cu rre n t (A)
A
1
5 6 7 8 9 101112
V , G ate -to-E mitter V o ltage (V
GE
T = 25°C
J
V = 5 0 V
CC
5µs PULSE WIDTH
A
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4PC50F
A
)
70
60
50
40
30
20
10
M a xi m um D C Co ll e c to r C urre n t (A )
0
25 50 75 100 125 150
T , Case Tem perature (°C)
C
V = 15V
GE
Fig. 4 - Maximum Collector Current vs. Case
Temperature
1
2.5
V = 1 5 V
GE
80µs PULSE WIDTH
I = 78A
C
2.0
I = 39A
1.5
CE
V , Collector - to -Emitter Volta g e (V )
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Tem perature (°C
J
C
I = 2 0A
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
D = 0.50
thJC
0.20
0.1
0.10
0.05
Th e r mal R es pon s e (Z )
0.01
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
SIN GL E PULS E
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
No tes :
1. D uty fac tor D = t / t
2. Pe a k T = P x Z + T
DM
J
P
DM
t
1
t
2
2
1
th JC
C
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PC50F
g
)
A
A
A
8000
6000
4000
VGE = 0V f = 1 MHz
Cies = Cge + Cgc + Cce SHORTED
Cres = Cce
Coes = Cce + Cgc
C
ies
C
oes
C, Capacitance (pF)
2000
C
res
0
1 10 100
V , Collector-to-Emitter Voltage (V)
CE
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
3.8
V = 480V
CC
V = 15V
GE
3.6
T = 25°C
J
I = 39A
C
3.4
3.2
3.0
2.8
20
V = 400V
CE
I = 39A
C
16
12
8
4
GE
V , G ate-to -Emitter Voltag e (V)
0
0 40 80 120 160 200
Q , To ta l G ate C h a rge (nC
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
R = 5.0
G
V = 15V
GE
V = 480V
CC
10
1
Ω
I = 78A
C
I = 39A
C
I = 20A
C
Total Switching Losses (mJ)
2.6
2.4
0 102030405060
)
R , Gate Resistance
G
( Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
A
Total Switching Losses (mJ)
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
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Page 6
IRG4PC50F
A
12
R = 5.0
G
T = 150°C
J
V = 480V
CC
10
V = 15V
GE
8
6
4
Total Switching Losses (mJ)
2
0
0 20406080
Ω
I , Collector-to-Emitter Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
V = 2 0 V
GE
GE
T = 12 5 °C
J
100
10
C
I , Collector-to-E mitter Current (A)
1
1 10 100 1000
V , C o l lec to r-to -Emitte r V o lta g e (V )
CE
SAFE OPERATING AREA
Fig. 12 - Turn-Off SOA
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IRG4PC50F
y
p
)
p
ply, p
50V
Q
* Driver same t
* Note: D ue to the 50V pow er s u
will in crease t o ob tain rated Id.
e as D .U.T.; Vc = 80% o f V ce(max
Fig. 13a - Clamped Inductive
Load Test Circuit
50V
1000V
Q
1000V
L
V *
C
ulse width and inductor
D.U.T.
L
Driver*
R
480V
RL =
X IC@25°C
0 - 480V
480µF
960V
4
R
Fig. 13b - Pulsed Collector
Current Test Circuit
I
C
V
C
S
D.U.T.
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
Q
R
90%
S
V
C
90%
10%
5%
I
C
t
d(on)
10%
t
r
E
on
t
d(off)
E = ( E +E )
ts o n off
Fig. 14b - Switching Loss
Waveforms
t
f
E
off
t=5µ s
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Page 8
IRG4PC50F
)
Case Outline and Dimensions TO-247AC
20.30 (.800)
19.70 (.775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215 )
2X
15.90 (.626)
15.30 (.602)
- B -
1
23
- D -
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
3X
2.60 (.102)
2.20 (.087)
4
0.80 (.031)
0.40 (.016)
3X
3.40 (.133)
3.00 (.118)
3.65 (.143 )
3.55 (.140 )
0.25 (.010)
- A -
5.50 (.217)
2X
- C -
4.30 (.170)
3.70 (.145)
1.40 (.056)
1.00 (.039)
0.25 (.010)
5.50 (.217)
4.50 (.177)
M
C
M
M
D
B
S
A
CONFORMS TO JED EC OU TLINE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches)
NOTES:
1 DIMENSIONS & TOLERANCING
PER AN SI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 D IME NS IO NS A R E SH O W N
MIL L IME T E R S (INCHES).
4 C ON F O R M S TO JE D EC O U T L INE
TO-247AC.
LEAD ASSIGNMENTS
1 - G A T E
2 - C OL L E CTO R
3 - E MIT T ER
4 - C OL L E CTO R
LONGER LEADED (20mm)
*
VERSION AVAILABLE (TO-247AD
TO ORDER ADD "-E" SUFFIX
TO PART NUMBER
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
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