Datasheet IRG4PC40WPBF Specification

INSULATED GATE BIPOLAR TRANSISTOR

TO-247AC

Features

• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications

• Industry-benchmark switching losses improve
efficiency of all power supply topologies

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and constructionoffers
tighter parameters distribution, exceptional reliability

• Lead-Free

Benefits

• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)

• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)

PD -95183

IRG4PC40WPbF

C

V

= 600V

CES

G

n-channel

V

CE(on) typ.

E

@VGE = 15V, IC = 20A

= 2.05V

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 40
IC @ TC = 100°C Continuous Collector Current 20 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 160
PD @ TC = 100°C Maximum Power Dissipation 65
T

J

T

STG

Collector-to-Emitter Breakdown Voltage 600 V

Pulsed Collector Current Q 160
Clamped Inductive Load Current R 160
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 160 mJ

W

Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Wt Weight 6 (0.21) ––– g (oz)

Junction-to-Case ––– 0.77
Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 40

www.irf.com 1

04/23/04

IRG4PC40WPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Notes:

Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.44 — V/°C VGE = 0V, IC = 1.0mA

J

— 2.05 2.5 I

Collector-to-Emitter Saturation Voltage — 2.36 — IC = 40A See Fig.2, 5

— 1.90 — IC = 20A , TJ = 150°C

V

= 20A VGE = 15V

C

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — 13 — mV/°C VCE = VGE, IC = 250µA

Forward Transconductance U 18 28 — S VCE = 100 V, IC =20A

Zero Gate Voltage Collector Current

— — 250 VGE = 0V, VCE = 600V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C

µA

— — 2500 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current — — ±100 n A VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) — 98 147 IC = 20A
Gate - Emitter Charge (turn-on) — 12 18 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 36 54 VGE = 15V
Turn-On Delay Time — 27 —
Rise Time — 22 — TJ = 25°C
Turn-Off Delay Time — 100 150 IC = 20A, VCC = 480V

ns

Fall Time — 74 110 VGE = 15V, RG = 10Ω
Turn-On Switching Loss — 0.11 — Energy losses include "tail"
Turn-Off Switching Loss — 0.23 — mJ See Fig. 9,10, 14
Total Switching Loss — 0.34 0.45
Turn-On Delay Time — 25 — TJ = 150°C,
Rise Time — 23 — IC = 20A, VCC = 480V
Turn-Off Delay Time — 170 — VGE = 15V, RG = 10Ω

ns

Fall Time — 124 — Energy losses include "tail"
Total Switching Loss — 0.85 — mJ See Fig.10,11, 14
Internal Emitter Inductance — 13 — nH Measured 5mm from package
Input Capacitance — 1900 — VGE = 0V
Output Capacitance — 140 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 35 — ƒ = 1.0MHz

Q Repetitive rating; V

= 20V, pulse width limited by

GE

max. junction temperature. ( See fig. 13b )

R V

CC

(See fig. 13a)

= 80%(V

CES

), V

= 20V, L = 10µH, RG = 10Ω,

GE

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.

U Pulse width 5.0µs, single shot.

S Repetitive rating; pulse width limited by maximum

junction temperature.

2 www.irf.com

IRG4PC40WPbF

50

40

30

20

Square wave:

60% of rated
v o lta g e

For both:

Duty cycle: 50%
T = 125°C

J

T = 90 °C

sink

Gate drive as specified

Power Dissipation = 28W

Triangular wave:

Clamp voltage:
80% of rated

Load Current ( A )

10

0

0.1 1 10 100 1000

Ideal diodes

f, Frequency (kH z)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

1000

of fundamental)

RMS

1000

A

°

T = 25 C



J

100

T = 150 C



J

10

C

I , Collector-to-Emitter Current (A)

1

1.0 2.0 3.0 4.0 5.0

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE



80µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

°

100

T = 150 C



10

C

I , Collector-to-Emitter Current (A)

1

5 7 9 11

°

J

°

T = 25 C



J

V = 50V

CC



5µs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

Fig. 3 - Typical Transfer Characteristics

www.irf.com 3

IRG4PC40WPbF

50

40

30

20

10

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1

3.0

V = 15V

GE



80 us PULSE WIDTH



I = A40

2.5

2.0

1.5

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

C



I = A20

C



I = A10

C

°

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

D = 0.50

thJC

0.20

0.1

0.10

P

0.05

Thermal Response (Z )

0.02

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE



(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

DM

t



1 2

1

t

2

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4 www.irf.com

IRG4PC40WPbF

4000

3000

2000

C, Capacitance (pF)

1000

0

1 10 100

V

=

0V,

GE

C

=

iesgegc , ce

C

=

resgc



C

=

oes cegc

C



ies

C



oes

C



res

V , Collector-to-Emitter Voltage (V)

CE

f = 1MHz

C

+ C
C
C

C SHORTED

+ C

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

1.0

V = 480V

CC

V = 15V

GE

T = 25 C

0.9

J



I = 20A

C

0.8

0.7

0.6

0.5

Total Switching Losses (mJ)

0.4

°

20

V = 400V

CC



I = 20A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 20 40 60 80 100

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 10Ohm

10 Ω

G

V = 15V

GE



V = 480V

CC



I = A

C

1

Total Switching Losses (mJ)



I = A

C



I = A

C

40

20

10

0.3
10 20 30 40 50 60

R , Gate Resistance (Ohm)

G

(Ω)

Fig. 9 - Typical Switching Losses vs. Gate

www.irf.com 5

Resistance

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

°

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

IRG4PC40WPbF

2.0

1.5

1.0

0.5

Total Switching Losses (mJ)

0.0

10Ω

R = 10Ohm

G

T = 150 C

J

V = 480V

CC



V = 15V

GE

5 15 25 35 45

°

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V = 20V

GE



T = 125 C

J

100

C

I , Collector-to-Emitter Current (A)

SAFE OPERATING AREA



10

1 10 100 1000

o

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

6 www.irf.com

IRG4PC40WPbF

y

p

)

p

ply, p

50V

Q

* Driver same t
* Note: Due to the 50V power su
w ill increase to obtain rated Id.

e as D.U.T.; Vc = 80% of Vce(max

Fig. 13a - Clamped Inductive

Load Test Circuit

50V

1000V

Q

1000V

L

V *

C

ulse width and inductor

D.U.T.

L

Driver*

R

480V

RL =

X IC@25°C

0 - 480V

480µF
960V

4

R

Fig. 13b - Pulsed Collector

Current Test Circuit

I

C

V

C

S

D.U.T.

Fig. 14a - Switching Loss

Test Circuit

* Driver same type
as D.U.T., VC = 480V

Q

R

90%

S

V

C

90%

10%

5%

I

C

t

d(on)

10%

t

r

E

on

t

d(off)

E = (E +E )

ts on off

Fig. 14b - Switching Loss

Waveforms

t

f

E

off

t=5µ s

www.irf.com 7

IRG4PC40WPbF

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

EXAMPLE:

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

8 www.irf.com

T HIS IS AN IRF PE30
WITH ASSEMBLY
LOT CODE 5657

AS S E MBL E D ON WW 35, 2000
IN THE ASSEMBLY LINE "H"

Note: "P" in assembly line
position indicates "Lead-Free"

INTE RNATIONAL

RE CTIF IER

LOGO

ASSEMBLY
LOT CODE

IRF PE30

035H

56 57

PART NUMBE R

DAT E CODE
YE AR 0 = 2000
WEEK 35
LINE H

Data and specifications subject to change without notice.

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information. 04/04

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/