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PD 91466E
TO-247AC
IRG4PC40U
INSULATED GATE BIPOLAR TRANSISTOR
FeaturesFeatures
Features
FeaturesFeatures
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
UltraFast Speed IGBT
C
V
CES
= 600V
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
G
E
V
CE(on) typ.
= 1.72V
@VGE = 15V, IC = 20A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 40
IC @ TC = 100°C Continuous Collector Current 20 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 160
PD @ TC = 100°C Maximum Power Dissipation 65
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current Q 160
Clamped Inductive Load Current R 160
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy S 15 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
W
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight ------ 6 (0.21) ------ g (oz)
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Junction-to-Case ------ ------ 0.77
Case-to-Sink, flat, greased surface ------ 0.24 ------ °C/W
Junction-to-Ambient, typical socket mount ------ ------ 40
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IRG4PC40U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 ---- ---- V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°CVGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ---- 1.72 2.1 IC = 20A VGE = 15V
---- 2.15 ---- V I
---- 1.7 ---- I
= 40A
C
= 20A, TJ = 150°C
C
Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -13 ---- mV/°CVCE = VGE, IC = 250µA
Forward Transconductance U 11 18 ---- S VCE = 100V, IC = 20A
---- ---- 250 VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current ---- ---- 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C
---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Total Gate Charge (turn-on) ---- 100 150 IC = 20A
Gate - Emitter Charge (turn-on) ---- 16 25 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) ---- 40 60 VGE = 15V
Turn-On Delay Time ---- 34 ---- TJ = 25°C
Rise Time ---- 19 ---- ns IC = 20A, VCC = 480V
Turn-Off Delay Time ---- 110 175 VGE = 15V, RG = 10Ω
Fall Time ---- 120 180 Energy losses include "tail"
Turn-On Switching Loss ---- 0.32 ---Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 10, 11, 13, 14
Total Switching Loss ---- 0.67 1.0
Turn-On Delay Time ---- 30 ---- TJ = 150°C,
Rise Time ---- 19 ---- ns IC = 20A, VCC = 480V
Turn-Off Delay Time ---- 220 ---- VGE = 15V, RG = 10Ω
Fall Time ---- 160 ---- Energy losses include "tail"
Total Switching Loss ---- 1.4 ---- mJ See Fig. 13, 14
Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
Input Capacitance ---- 2100 ---- VGE = 0V
Output Capacitance ---- 140 ---- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ---- 34 ---- ƒ = 1.0MHz
See Fig. 2, 5
Notes:
Q Repetitive rating; V
= 20V, pulse width limited by
GE
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
R V
= 80%(V
CC
CES
), V
= 20V, L = 10µH, RG = 10Ω,
GE
U Pulse width 5.0µs, single shot.
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4PC40U
)
A
µ
A
)
A
80
60
40
Square wave:
60% of rated
vo ltag e
For both:
Duty cycle: 50 %
T = 125°C
J
T = 9 0°C
sink
G ate drive as specified
Powe r Dissipation = 40W
Triangular wave:
Clamp voltage:
80% of rated
Load Current (A)
20
0
0.1 1 10 100
Ideal diodes
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
1000
of fundamental; for triangular wave, I=IPK)
RMS
1000
100
10
C
I , Collector-to-Emitter Current (A)
1
0.1 1 10
V , Collector-to-Emitter Voltage (V)
CE
T = 25°C
J
T = 150°C
J
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
100
T = 150°C
J
T = 25°C
10
C
I , C o llec to r- to -E m i tte r C urr e n t (A)
1
4681012
V , G a te-to -E m itter Vo ltage (V
GE
J
V = 1 0V
CC
5
s PULSE W IDTH
Fig. 3 - Typical Transfer Characteristics
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IRG4PC40U
A
A
40
30
20
10
V = 15V
GE
Maximum DC Collector Current (A)
0
25 50 75 100 125 150
T , Case Temperature (°C)
C
Fig. 4 - Maximum Collector Current vs. Case
Temperature
1
2.5
V = 15V
GE
80µs PULSE WIDTH
I = 40A
C
2.0
C
I = 20A
1.5
C
I = 10A
CE
V , Collector-to-Emitter Voltage (V)
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
D = 0.50
thJ C
0.20
0.1
0.10
0.05
SIN GLE PULSE
The rmal Resp onse (Z )
0.01
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
No tes:
1. D uty fac tor D = t / t
2. Pe a k T = P x Z + T
DM
J
1
1
thJC
P
DM
2
t
1
t
2
C
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PC40U
)
A
g
A
A
(
)
4000
3000
2000
C, Capac itance (pF)
1000
0
1 10 100
V = 0 V , f = 1MH z
GE
C = C + C , C S HOR TE D
ies ge gc ce
C = C
res g c
C = C + C
oes ce gc
C
ies
C
oes
C
res
V , Co llecto r-to-E m itter V oltage (V
CE
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.1
V = 480V
CC
V = 15V
GE
T = 25°C
J
I = 20A
1.0
C
20
V = 4 00 V
CE
I = 2 0 A
C
16
12
8
4
GE
V , G a te-to-Emitter V oltage (V)
0
0 20 40 60 80 100 120
Q , To tal G a te C h a rge (nC )
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
R = 10
V = 15V
V = 480V
G
GE
CC
Ω
I = 40A
C
0.9
0.8
0.7
Total Switching Losses (mJ)
0.6
0 102030405060
R , Gate Resistance
G
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
1
Total Switching Losses (mJ)
A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
I = 20A
C
I = 10A
C
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IRG4PC40U
A
4.0
R = 10
T = 150°C
V = 480V
V = 15V
3.0
2.0
1.0
G
J
CC
GE
Ω
Total Switching Losses (mJ)
0.0
0 1020304050
I , Collector-to-Emitter Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
V = 2 0 V
GE
GE
T = 125°C
J
100
SAFE OPERATING AREA
10
C
I , Co l l e c to r -to-E mi tte r Cu rr e n t (A )
1
1 10 100 1000
V , C o l lec to r-to -Em itte r Volta g e (V)
CE
Fig. 12 - Turn-Off SOA
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IRG4PC40U
y
p
)
p
ply, p
50V
Q
* Driver same t
* Note: D ue to the 50V pow er s u
will in crea s e t o obtain ra t e d Id.
e as D .U.T.; Vc = 80% o f V ce(max
Fig. 13a - Clamped Inductive
Load Test Circuit
50V
1000V
Q
1000V
L
V *
C
ulse width and inductor
D.U.T.
L
Driver*
R
480V
RL =
X IC@25°C
0 - 480V
480µF
960V
4
R
Fig. 13b - Pulsed Collector
Current Test Circuit
I
C
V
C
S
D.U.T.
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
Q
R
90%
S
V
C
90%
10%
5%
I
C
t
d(on)
10%
t
r
E
on
t
d(off)
E = ( E +E )
ts on off
Fig. 14b - Switching Loss
Waveforms
t
f
E
off
t=5µ s
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IRG4PC40U
)
Case Outline and Dimensions TO-247AC
20.30 (.800)
19.70 (.775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215 )
2X
15.90 (.626)
15.30 (.602)
- B -
1
23
- D -
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
3X
2.60 (.102)
2.20 (.087)
4
0.80 (.031)
0.40 (.016)
3X
0.25 (.010)
3.40 (.133)
3.00 (.118)
3.65 (.143 )
3.55 (.140 )
0.25 (.010)
- A -
5.50 (.217)
2X
- C -
4.30 (.170)
3.70 (.145)
1.40 (.056)
1.00 (.039)
M
5.50 (.217)
4.50 (.177)
M
A
C
M
D
B
S
CONFORMS TO JED EC OU TLINE TO-247AC (TO-3P)
Dimensions in Millim eters and (Inches)
NOTES:
1 DIMENSIONS & TOLERANCING
PER AN SI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 D IME N SIONS A RE S H OW N
MIL L IMET E R S (INCHES).
4 C ON F ORM S T O JE D E C O U T L IN E
TO-247AC.
LEAD ASSIGNMENTS
1 - G A T E
2 - C OLL EC T OR
3 - E MIT T E R
4 - C OLL EC T OR
LONGER LEADED (20mm)
*
VERSION AVAILABLE (TO-247AD
TO ORDER ADD "-E" SUFFIX
TO PART NUMBER
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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