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PD 9.1467D
TO-247AC
IRG4PC40UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
FeaturesFeatures
Features
FeaturesFeatures
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
G
n-channel
bridge configurations
• Industry standard TO-247AC package
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 40
IC @ TC = 100°C Continuous Collector Current 20
I
CM
I
LM
IF @ TC = 100°C Diode Continuous Forward Current 15
I
FM
V
GE
PD @ TC = 25°C Maximum Power Dissipation 160
PD @ TC = 100°C Maximum Power Dissipation 65
T
J
T
STG
Collector-to-Emitter Voltage 600 V
Pulsed Collector Current 160 A
Clamped Inductive Load Current 160
Diode Maximum Forward Current 160
Gate-to-Emitter Voltage ± 20 V
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Min. Typ. Max. Units
R
θJC
R
θJC
R
θCS
R
θJA
Wt Weight ------ 6 (0.21) ------ g (oz)
Junction-to-Case - IGBT ------ ------ 0.77
Junction-to-Case - Diode ------ ------ 1.7 °C/W
Case-to-Sink, flat, greased surface ------ 0.24 -----Junction-to-Ambient, typical socket mount ----- ----- 40
C
V
= 600V
CES
V
CE(on) typ.
E
@VGE = 15V, IC = 20A
= 1.72V
W
4/17/97
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IRG4PC40UD
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
∆V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
/∆T
Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C VGE = 0V, IC = 1.0mA
J
Collector-to-Emitter Saturation Voltage ---- 1.72 2.1 IC = 20A VGE = 15V
---- 2.15 ---- V IC = 40A See Fig. 2, 5
---- 1.7 ---- IC = 20A, TJ = 150°C
V
∆V
g
I
CES
fe
GE(th)
GE(th)
Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 11 18 ---- S VCE = 100V, IC = 20A
Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V
---- ---- 3500 VGE = 0V, VCE = 600V, TJ = 150°C
V
FM
Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 15A See Fig. 13
---- 1.2 1.6 IC = 15A, TJ = 150°C
I
GES
Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q
g
Qge Gate - Emitter Charge (turn-on) ---- 16 25 nC VCC = 400V See Fig. 8
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
Total Gate Charge (turn-on) ---- 100 150 IC = 20A
Gate - Collector Charge (turn-on) ---- 40 60 VGE = 15V
Turn-On Delay Time ---- 54 ---- TJ = 25°C
Rise Time ---- 57 ---- ns IC = 20A, VCC = 480V
Turn-Off Delay Time ---- 110 165 VGE = 15V, RG = 10Ω
Fall Time ---- 80 120 Energy losses include "tail" and
Turn-On Switching Loss ---- 0.71 ---- diode reverse recovery.
Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 9, 10, 11, 18
Total Switching Loss ---- 1.10 1.5
Turn-On Delay Time ---- 40 ---- TJ = 150°C, See Fig. 9, 10, 11, 18
Rise Time ---- 52 ---- ns IC = 20A, VCC = 480V
Turn-Off Delay Time ---- 200 ---- VGE = 15V, RG = 10Ω
Fall Time ---- 130 ---- Energy losses include "tail" and
Total Switching Loss ---- 1.6 ---- mJ diode reverse recovery.
Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package
Input Capacitance ---- 2100 ---- VGE = 0V
Output Capacitance ---- 140 ---- pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance ---- 34 ---- ƒ = 1.0MHz
Diode Reverse Recovery Time ---- 42 60 ns TJ = 25°C See Fig.
---- 74 120 TJ = 125°C 14 IF = 15A
Diode Peak Reverse Recovery Current ---- 4.0 6.0 A TJ = 25°C See Fig.
---- 6.5 10 TJ = 125°C 15 VR = 200V
Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig.
---- 220 600 TJ = 125°C 16 di/dt 200A/µs
/dt Diode Peak Rate of Fall of Recovery ---- 19 0 ---- A/µs TJ = 25°C
During t
b
---- 160 ---- TJ = 125°C
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IRG4PC40UD
A
A
A
30
Duty cycle: 50%
T = 125°C
J
T = 9 0 °C
sink
Gate drive as specified
Turn-on losses include
20
60% of rated
v o lta g e
10
Load Current (A)
0
0.1 1 10 100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
of fundamental)
RMS
effects o f reve rse re c ov e ry
Pow er Dissipation = 35W
1000
100
10
C
I , Collector-to-Emitter Current (A)
1
0.1 1 10
V , Collector-to-Emitter Voltage (V)
CE
T = 25°C
J
T = 150°C
J
V = 15V
GE
20µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics
1000
100
T = 150°C
J
T = 25°C
10
C
I , Collector-to-Emitter Current (A)
1
4681012
V , Gate-to-Emitter Voltage (V)
GE
J
V = 10V
CC
5µs PULSE WIDTH
Fig. 3 - Typical Transfer Characteristics
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IRG4PC40UD
A
A
40
30
20
10
V = 15V
GE
Maximum DC Collector Current (A)
0
25 50 75 100 125 150
T , Case Temperature (°C)
C
Fig. 4 - Maximum Collector Current vs.
Case Temperature
1
2.5
V = 15V
GE
80µs PULSE WIDTH
I = 40A
C
2.0
C
I = 20A
1.5
C
I = 10A
CE
V , Collector-to-Emitter Voltage (V)
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
D = 0.50
thJC
0.20
0.1
0.10
0.05
SIN GLE P U LS E
Thermal Response (Z )
0.01
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
No tes:
1. D uty fac tor D = t / t
2. Pe a k T = P x Z + T
J
1
DM
P
DM
t
1
t
2
2
1
thJC
C
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PC40UD
A
A
4000
3000
2000
C, C apa citance (pF)
1000
0
1 10 100
V = 0 V , f = 1M Hz
GE
C = C + C , C S HORT E D
ies ge gc ce
C = C
res g c
C = C + C
oes ce g c
C
ies
C
oes
C
res
V , Co lle cto r-to -E m itter V o ltage (V)
CE
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.8
V = 480V
CC
V = 15V
GE
T = 25°C
C
I = 20A
C
1.6
20
V = 4 00 V
CE
I = 20A
C
16
12
8
4
GE
V , Ga te-to-Em itter Voltage (V)
0
0 20 40 60 80 100 120
Q , To tal Ga te C h a rge (nC )
g
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
R = 10
V = 15V
V = 480V
G
GE
CC
Ω
I = 40A
C
I = 20A
C
1.4
1.2
Total Switching Losses (mJ)
1.0
0 102030405060
R , Gate Resistance (Ω)
G
A
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
1
I = 10A
C
Total Switching Losses (mJ)
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
A
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IRG4PC40UD
)
5.0
R = 10
T = 150°C
V = 480V
4.0
V = 15V
3.0
2.0
1.0
Total Switching Losses (mJ)
0.0
0 1020304050
Fig. 11 - Typical Switching Losses vs.
Ω
G
C
CC
GE
I , Collector-to-Emitter Current (A)
C
Collector-to-Emitter Current
100
1000
V = 2 0 V
GE
GE
T = 12 5 °C
J
100
SAFE OPERATING AREA
10
C
I , Collector-to-Emitter Cur rent ( A)
A
1
1 10 100 1000
V , Collector-to-Emitter Voltage (V)
CE
Fig. 12 - Turn-Off SOA
F
10
T = 150°C
J
T = 125°C
J
T = 25°C
J
Instantaneous Forward Current - I (A)
1
0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V (V
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4PC40UD
)
)
)
(A/µs)
100
V = 200V
R
T = 125°C
J
T = 25°C
J
80
I = 30A
F
60
rr
t - (ns)
40
20
100 1000
di /dt -
f
I = 15A
F
I = 5.0A
F
Fig. 14 - Typical Reverse Recovery vs. dif/dt
800
V = 2 00V
R
T = 125°C
J
T = 25°C
J
100
V = 2 00V
R
T = 125°C
J
T = 25°C
J
I = 30 A
F
I = 15 A
F
10
IRR M
I - (A)
I = 5.0 A
F
1
100 1000
di /dt - (A/µs
f
Fig. 15 - Typical Recovery Current vs. dif/dt
1000
V = 200V
R
T = 125°C
J
T = 25°C
J
600
I = 3 0A
F
I = 5 . 0 A
I = 15 A
F
I = 30 A
F
F
di /dt - (A/µs
400
RR
Q - (nC)
I = 15 A
F
I = 5 . 0 A
F
200
0
100 1000
d i /d t - (A/µs
f
di(rec)M/dt - (A/µs)
100
100 1000
Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di
f
(rec)M
/dt vs. dif/dt
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IRG4PC40UD
90% Vge
+Vge
Same type
device as
D.U.T.
80%
of Vce
430µF
D.U.T.
Fig. 18a - Test Circuit for Measurement of
I
, Eon, E
LM
Vcc
10% +Vg
10% Ic
td(on)
off(diode)
Vce
t1
, trr, Qrr, Irr, t
90% Ic
5% Vc e
tr
, tr, t
d(on)
GATE VOLTAG E D.U.T.
+Vg
d(off)
DUT VO LTAGE
AND CURRE NT
Ipk
Vce ie dt
Eon =
∫
t1
t2
Vce
10% Vce
Ic
td(off)
, t
f
t1
90% Ic
Ic
5% Ic
tf
Eoff =
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
, t
d(off)
t3
, t
f
trr
Qrr =
10% Irr
DIODE RECO V E RY
W AVEFO RMS
Erec =
∫
t4
E
off
Ic
tx
10% Vc c
Vpk
Ic
t2
DIODE REVE RSE
RECOVERY ENERGY
Irr
t1+5µS
Vce ic dt
∫
t1
∫
tx
t4
Vd id dt
t3
trr
id dt
Vcc
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining E
, t
d(on)
, t
r
on
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining E
, trr, Qrr, I
rec
rr
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Vg
GATE SIGNAL
DEVICE UNDE R TE ST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
IRG4PC40UD
t0
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L
1000V
V *
c
50V
6000µF
100V
Figure 19. Clamped Inductive Load Test
Circuit
t1
t2
D.U.T.
RL=
0 - 480V
Figure 20. Pulsed Collector Current
Test Circuit
480V
4 X IC @25°C
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IRG4PC40UD
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
V
=80%(V
CC
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline TO-247AC
), VGE=20V, L=10µH, RG= 10Ω (figure 19)
CES
20.30 (.800)
19.70 (.775)
14.80 (.583)
*
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
15.90 (.626)
15.30 (.602)
- B -
1
23
3.65 (.143)
3.55 (.140)
M
0.25 (.010)
- A -
5.50 (.217)
5.50 (.217)
2X
4.50 (.177)
- C -
4.30 (.170)
3.70 (.145)
1.40 (.056)
3X
1.00 (.039)
M
0.25 (.010)
3.40 (.133)
3.00 (.118)
CONFORMS TO JEDEC OU TLINE TO-247AC (TO-3P)
Dimensions in M illimeters and (Inches)
M
D
B
S
A
C
- D -
2.50 (.089)
1.50 (.059)
3X
2.60 (.102)
2.20 (.087)
5.30 (.209)
4.70 (.185)
4
0.80 (.031)
0.40 (.016)
NOTES:
1 DIMENSIONS & TOLERANCING
PER A N S I Y 14 .5M , 198 2 .
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS ARE SHOW N
MILLIM E T E R S (INC H E S ).
4 CON F OR M S T O J E D E C O U T L IN E
TO-24 7 A C .
LEAD ASSIGNMENTS
1 - GAT E
2 - COL L E C T O R
3 - EMIT T E R
4 - COL L E C T O R
LON G E R LE A D E D (2 0mm )
*
VERSION AVAILABLE (TO-247AD)
TO ORDER ADD "-E" SUFFIX
TO PART NUM BER
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 4/97
Page 11
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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