Datasheet irg4pc40k Datasheet

INSULATED GATE BIPOLAR TRANSISTOR

PD - 9.1585B

IRG4PC40K

Short Circuit Rated

UltraFast IGBT

FeaturesFeatures

Features

FeaturesFeatures

• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V

GE

= 15V

• Generation 4 IGBT design provides higher efficiency than Generation 3

• Industry standard TO-247AC package

G

C

V

= 600V

CES

V

CE(on) typ.

E

@VGE = 15V, IC = 25A

= 2.1V

n-channel

Benefits

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

TO-247AC

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 42 IC @ TC = 100°C Continuous Collector Current 25 A I

CM

I

LM

t

sc

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 T

J

T

STG

Thermal Resistance

R

θJC

R

θCS

R

θJA

Wt Weight 6 (0.21) ––– g (oz)

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current Q 84 Clamped Inductive Load Current R 84 Short Circuit Withstand Time 10 µs Gate-to-Emitter Voltage ±20 V Reverse Voltage Avalanche Energy S 15 mJ

Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Parameter Typ. Max. Units

Junction-to-Case ––– 0.77 Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W Junction-to-Ambient, typical socket mount ––– 40

4/15/2000

IRG4PC40K

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

sc

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Notes:

Q Repetitive rating; V

max. junction temperature. ( See fig. 13b )

R V

(See fig. 13a)

Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.46 — V/°CVGE = 0V, IC = 1.0mA

J

— 2.10 2.6 I

Collector-to-Emitter Saturation Voltage — 2.70 — IC = 42 A See Fig.2, 5

— 2.14 — I

V

= 25A VGE = 15V

C

= 25A , TJ = 150°C

C

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -13 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance U 7.0 14 — SVCE = 100 V, IC = 25A Zero Gate Voltage Collector Current

——250 VGE = 0V, VCE = 600V ——2.0 VGE = 0V, VCE = 10V, TJ = 25°C

µA

——2000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) — 120 180 IC = 25A Gate - Emitter Charge (turn-on) — 16 24 nC VCC = 400V See Fig.8 Gate - Collector Charge (turn-on) — 51 77 VGE = 15V Turn-On Delay Time — 30 — Rise Time — 15 — TJ = 25°C Turn-Off Delay Time — 140 210 IC = 25A, VCC = 480V

ns

Fall Time — 140 210 VGE = 15V, RG = 10Ω Turn-On Switching Loss — 0.62 — Energy losses include "tail" Turn-Off Switching Loss — 0.33 — mJ See Fig. 9,10,14 Total Switching Loss — 0.95 1.4 Short Circuit Withstand Time 10 —— µs VCC = 400V, TJ = 125°C

VGE = 15V, RG = 10Ω , V Turn-On Delay Time — 30 — TJ = 150°C, Rise Time — 18 — IC = 25A, VCC = 480V Turn-Off Delay Time — 190 — VGE = 15V, RG = 10Ω

ns

Fall Time — 150 — Energy losses include "tail" Total Switching Loss — 1.9 — mJ See Fig. 11,14 Internal Emitter Inductance — 13 — nH Measured 5mm from package Input Capacitance — 1600 — VGE = 0V Output Capacitance — 130 — pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance — 55 —ƒ = 1.0MHz

= 80%(V

CC

CES

= 20V, pulse width limited by

GE

), V

= 20V, L = 10µH, RG = 10Ω,

GE

S Repetitive rating; pulse width limited by maximum

junction temperature.

T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot.

CPK

< 500V

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IRG4PC40K

)

A

60

40

Square wave:

60 % o f ra te d vo lta ge

20

Load Current (A)

Ideal diodes

0

0.1 1 10 100

For both:

Duty cycle: 50% T = 125°C

J

T = 9 0°C

sink

G a te dr ive a s s p ec ifie d

Pow er Dissipation = 35W

Triangular w a v e :

Clamp voltage: 80% of rated

f, Frequency (kHz

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

100

of fundamental)

RMS

100

T = 150°C

o

T = 150 C

J

10

o

T = 25 C

J

C

I , Collector-to-Emitter Current (A)

1

0.1 1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE

20µs PULSE WIDTH

10

C

I , Collector-to-Emitter Current (A)

J

T = 25°C

J

V = 50V

CC

1

57911

V , Gate-to-Emitter Voltage (V)

GE

5µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PC40K

50

40

30

20

10

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1

5.0

V = 15V

GE

80 us PULSE WIDTH

4.0

3.0

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

I = A50

C

I = A25

C

I = A12.5

C

°

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

D = 0.50

thJC

0.20

0.1

0.10 P

1 2

DM

t

1

t

2

0.05

Thermal Response (Z )

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4PC40K

3000

2500

2000

1500

1000

C, Capacitance (pF)

500

0

1 10 100

V

=

0V,

GE

C

=

iesgegc , ce

C

=

resgc

C

=

oes cegc

C

ies

C

oes

C

res

V , Collector-to-Emitter Voltage (V)

CE

f = 1MHz

C

+ C C C

C SHORTED

+ C

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

1.80

V = 480V

CC

V = 15V

GE

°

1.60

T = 25 C

J

I = 25A

C

20

V = 400V

CC

I = 25A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 20 40 60 80 100 120 140

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 10Ohm

G

V = 15V

GE

V = 480V

CC

Ω

I = A

C

50

I = A

25

1.40

1.20

1.00

Total Switching Losses (mJ)

0.80 0 10 20 30 40 50

R , Gate Resistance (Ohm)

G

Ω

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

1

Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

C

I = A

12.5

C

°

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IRG4PC40K

5.0

R = 10Ohm T = 150 C V = 480V V = 15V

4.0

3.0

2.0

1.0

Total Switching Losses (mJ)

0.0 0 10 20 30 40 50

Ω

G

J CC GE

°

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V = 20V

GE

T = 125 C

J

100

10

C

I , Collector-to-Emitter Current (A)

SAFE OPERATING AREA

1

1 10 100 1000

o

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

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IRG4PC40K

y

p

)

p

ply, p

50V

Q

* Driver same t * Note: D ue to the 50V pow er s u will in crea s e t o o btain ra t e d Id.

e as D .U.T.; Vc = 80% o f V ce(max

Fig. 13a - Clamped Inductive

Load Test Circuit

50V

1000V

Q

1000V

L

V *

C

ulse width and inductor

D.U.T.

L

Driver*

R

480V

RL =

X IC@25°C

0 - 480V

480µF 960V

4

R

Fig. 13b - Pulsed Collector

Current Test Circuit

I

C

V

C

S

D.U.T.

Fig. 14a - Switching Loss

Test Circuit

* Driver same type as D.U.T., VC = 480V

Q

R

90%

S

V

C

90%

10%

5%

I

C

t

d(on)

10%

t

r

E

on

t

d(off)

E = ( E +E )

ts on off

Fig. 14b - Switching Loss

Waveforms

t

f

E

off

t=5µ s

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IRG4PC40K

)

Case Outline and Dimensions — TO-247AC

20.30 (.800)

19.70 (.775)

14.80 (.583)

14.20 (.559)

2.40 (.094)

2.00 (.079)

2X

5.45 (.215 ) 2X

15.90 (.626)

15.30 (.602)

- B -

1

23

- D -

5.30 (.209)

4.70 (.185)

2.50 (.089)

1.50 (.059)

3X

2.60 (.102)

2.20 (.087)

4

0.80 (.031)

0.40 (.016)

3X

3.40 (.133)

3.00 (.118)

3.65 (.143 )

3.55 (.140 )

0.25 (.010)

- A -

5.50 (.217)

2X

- C -

4.30 (.170)

3.70 (.145)

1.40 (.056)

1.00 (.039)

0.25 (.010)

5.50 (.217)

4.50 (.177)

M

C

M

D

B

S

A

CONFORMS TO JED EC OU TLINE TO-247AC (TO-3P)

Dimensions in Millimeters and (Inches)

NOTES: 1 DIMENSIONS & TOLERANCING PER AN SI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 D IMENSIO N S ARE SHO W N MIL L IMET E R S (INCHES). 4 C ONF O R MS T O JE D EC O U T L IN E TO-247AC.

LEAD ASSIGNMENTS 1 - G A TE 2 - C OLL E CTOR 3 - E MITT ER 4 - C OLL E CTOR

LONGER LEADED (20mm)

*

VERSION AVAILABLE (TO-247AD TO ORDER ADD "-E" SUFFIX TO PART NUMBER

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Data and specifications subject to change without notice. 4/00

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