Datasheet IRG4PC40FDPBF Specification

PD - 94911

TO-247AC

IRG4PC40FDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

Fast CoPack IGBT

ULTRAFAST SOFT RECOVERY DIODE

Features

 Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

TM

 IGBT co-packaged with HEXFRED

ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

G

n-channel

 Industry standard TO-247AC package

 Lead-Free

Benefits

 Generation -4 IGBT's offer highest efficiencies available  IGBT's optimized for specific application conditions  HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing  Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 49 IC @ TC = 100°C Continuous Collector Current 27 I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 15 I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 160 PD @ TC = 100°C Maximum Power Dissipation 65 T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current  200 A Clamped Inductive Load Current  200

Diode Maximum Forward Current 200 Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight ------ 6 (0.21) ------ g (oz)

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Junction-to-Case - IGBT ------ ------ 0.77 Junction-to-Case - Diode ------ ------ 1.7 °C/W Case-to-Sink, flat, greased surface ------ 0.24 -----Junction-to-Ambient, typical socket mount ----- ----- 40

C

V

= 600V

CES

V

CE(on) typ.

E

@VGE = 15V, IC = 27A

= 1.50V

W

12/29/03

IRG4PC40FDPbF

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage ---- 0.70 ---- V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage ---- 1.50 1.7 IC = 27A VGE = 15V

---- 1.85 ---- V IC = 49A See Fig. 2, 5

---- 1.56 ---- IC = 27A, TJ = 150°C

V

∆V

g I

CES

GE(th)

fe

Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage ---- -12 ---- mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  9.2 12 ---- S VCE = 100V, IC = 27A Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V

---- ---- 3500 VGE = 0V, VCE = 600V, TJ = 150°C

V

FM

Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 15A See Fig. 13

---- 1.2 1.6 IC = 15A, TJ = 150°C

I

GES

Gate-to-Emitter Leakage Current ---- ---- ±100 n A VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Q

g

Qge Gate - Emitter Charge (turn-on) ---- 15 23 nC VCC = 400V See Fig. 8 Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

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Total Gate Charge (turn-on) ---- 100 150 IC = 27A

Gate - Collector Charge (turn-on) ---- 35 53 VGE = 15V Turn-On Delay Time ---- 63 ---- TJ = 25°C Rise Time ---- 32 ---- ns IC = 27A, VCC = 480V Turn-Off Delay Time ---- 230 350 VGE = 15V, RG = 10Ω Fall Time ---- 170 250 Energy losses include "tail" and Turn-On Switching Loss ---- 0.95 ---- diode reverse recovery. Turn-Off Switching Loss ---- 2.01 ---- mJ See Fig. 9, 10, 11, 18 Total Switching Loss ---- 2.96 4.0 Turn-On Delay Time ---- 63 ---- TJ = 150°C, See Fig. 9, 10, 11, 18 Rise Time ---- 33 ---- ns IC = 27A, VCC = 480V Turn-Off Delay Time ---- 350 ---- VGE = 15V, RG = 10Ω Fall Time ---- 310 ---- Energy losses include "tail" and Total Switching Loss ---- 4.7 ---- mJ diode reverse recovery. Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package Input Capacitance ---- 2200 ---- VGE = 0V Output Capacitance ---- 140 ---- pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance ---- 29 ----  = 1.0MHz Diode Reverse Recovery Time ---- 42 60 ns TJ = 25°C See Fig.

---- 74 120 TJ = 125°C 14 IF = 15A

Diode Peak Reverse Recovery Current ---- 4.0 6.0 A TJ = 25°C See Fig.

---- 6.5 10 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig.

---- 220 600 TJ = 125°C 16 di/dt 200A/µs

/dt Diode Peak Rate of Fall of Recovery ---- 188 ---- A/µs TJ = 25°C See Fig.

During t

b

---- 160 ---- TJ = 125°C 17

IRG4PC40FDPbF

)

A

40

Duty c ycle: 5 0% T = 125°C

J

T = 90°C

sink

30

Gate driv e as specified Turn-on losses include effects of reverse recovery

Power Dissipation = 35W

20

60% of rated voltage

Load Current (A)

10

0

0.1 1 10 100

f, Frequency (kHz

Fig. 1 - Typical Load Current vs. Frequency

1000

100

T = 25°C

J

T = 150°C

J

(Load Current = I

of fundamental)

RMS

1000

100

T = 150°C

J

T = 25°C

10

, Collector-to-Emitter Current (A)

C

I

1

110

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE

20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

10

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12

Fig. 3 - Typical Transfer Characteristics

J

V = 50V

CC

5µs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

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IRG4PC40FDPbF

0

A

50

40

30

20

10

V = 15V

GE

Maximum DC Collector Current (A)

0

25 50 75 100 125 15

T , Case Temperature (°C)

C

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1

2.5

V = 15V

GE

80µs PULSE WIDTH

2.0

1.5

CE

V , Collector-to-Emitter Voltage (V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

J

I = 54A

C

I = 27A

C

I = 14A

C

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

D = 0.50

thJC

0.20

0.1

0.10

0.05

SINGLE PULSE

Thermal Response (Z )

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

Notes: 

1. Duty factor D = t / t

2. Pe ak T = P x Z + T 

DM

J

1

P

DM

t

1

t

2

1

thJC

C 

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4 www.irf.com

IRG4PC40FDPbF

A

g

A

4000

3000

2000

1000

C , Capacitance ( pF)

0

1 10 100

VGE = 0V f = 1 MHz

Cies = Cge + Cgc + Cce SHORTED

Cres = Cce

Coes = Cce + Cgc

C

ies

C

oes

C

res

V , Collector-to-Emitter Voltage (V)

CE

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

3.3

V = 480V

CC

V = 15V

GE

T = 25°C

J

I = 27A

C

20

V = 400V

CE

 I = 27A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 20406080100120

Q , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

R = 10 V = 15V V = 480V

G

GE

CC

Ω

3.2

3.1

Total Switchig Losses (mJ)

3.0 0 102030405060

R , Gate Resistance (

G

Ω

)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

A

10

1

I = 54A

C

I = 27A

C

I = 14A

C

Total Switchig Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

J

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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IRG4PC40FDPbF

A

0

12

R = 10 T = 150°C V = 480V

10

V = 15V

G

J

CC

GE

Ω

1000

V = 20V

GE

T = 125°C

J

8

6

4

2

Total Switchig Losses (mJ)

0

0 102030405060

I , Collector-to-Emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

F

100

SAFE OPERATING AREA

10

C

I , Collector-to-Emitter Current (A)

1

1 10 100 100

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

10

T = 150°C

J

T = 125°C

J

T = 25°C

J

Instantaneous Forward Current - I (A)

1

0.8 1.2 1.6 2.0 2.4

Forward Voltage Drop - V (V)

FM

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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IRG4PC40FDPbF

I - (A)

IRRM

100

10

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 15A

F

I = 30A

F

I = 5.0A

F

100

V = 200V

R

T = 125°C

J

T = 25°C

J

80

I = 30A

F

60

rr

t - (ns)

40

I = 15A

F

I = 5.0A

F

20

100 1000

di /dt - (A/µs)

f

Fig. 14 - Typical Reverse Recovery vs. dif/dt

800

V = 200V

R

T = 125°C

J

T = 25°C

J

600

I = 30A

F

400

RR

Q - (nC)

I = 15A

F

I = 5.0A

F

200

0

100 1000

di /dt - (A/µs)

f

1

100 1000

di /dt - (A/µs)

f

Fig. 15 - Typical Recovery Current vs. dif/dt

1000

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 5.0A

F

I = 15A

F

I = 30A

di(rec)M/dt - (A/µs)

F

100

100 1000

di /dt - (A/µs)

f

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di

(rec)M

/dt vs. dif/dt

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IRG4PC40FDPbF

90% Vge

+Vge

Same type device as D.U.T.

80% of Vce

430µF

D.U.T.

Fig. 18a - Test Circuit for Measurement of

I

, Eon, E

LM

Vcc

10% +Vg

10% Ic

td(on)

off(diode)

Vce

t1

, trr, Qrr, Irr, t

90% Ic

5% Vce

tr

, tr, t

d(on)

GATE VOLTAGE D.U.T.

+Vg

d(off)

DUT VOLTAGE AND CURRE NT

Ipk

Vce ie dt

Eon =

∫

t1

t2

Vce

10% Vce

Ic

td(off)

, t

f

t1

90% Ic

Ic

5% Ic

tf

Eoff =

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

, t

d(off)

t3

, t

f

trr

Qrr =

10% Irr

DIODE RECOVERY WAVEFORMS

Erec =

∫

t4

E

off

Ic

tx

10% Vcc

Vpk

Ic

t2

DIODE REVERSE RECOVERY ENERGY

Irr

Vce ic dt

∫

t1

∫

t4

Vd id dt

t3

t1+5µS

trr

id dt

tx

Vcc

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

d(on)

, t

r

on

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

rr

8 www.irf.com

Vg

T

GATE SIGNAL DEVICE UNDER T ES

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

IRG4PC40FDPbF

t0

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L

1000V

V *

c

50V

Figure 19. Clamped Inductive Load Test Circuit

6000µF 100V

t1

t2

D.U.T.

0 - 480V

Figure 20. Pulsed Collector Current

Test Circuit

RL=

480V

4 X IC @25°C

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IRG4PC40FDPbF

Notes:

Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)

V

=80%(V

CC

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

Pulse width 5.0µs, single shot.

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

), VGE=20V, L=10µH, RG = 10Ω (figure 19)

CES

- A -

5.50 (.217)

2X

- C -

4.30 (.170)

3.70 (.145)

1.40 (.056)

1.00 (.039)

0.25 (.010)

3.65 (.143)

3.55 (.140)

0.25 (.010)

5.50 (.217)

4.50 (.177)

M

C

D

MMB

A

S

20.30 (.800)

19.70 (.775)

14.80 (.583)

14.20 (.559)

2.40 (.094)

2.00 (.079) 2X

5.45 (.215)

2X

15.90 (.626)

15.30 (.602)

- B -

123

3.40 (.133)

3.00 (.118)

3X

TO-247AC Part Marking Information

EXAMPLE:

THIS IS AN IRF PE30 WITH ASSEMBLY LOT CODE 5657

ASS EMB LED ON WW 35, 20 00 IN THE AS SEMBLY LINE "H"

Note: "P" in assembly line positio n indicat es "Lead-Free"

INTER NATIONAL

RECTIF IER

LOGO

ASSEMBLY LOT CODE

- D -

2.50 (.089)

1.50 (.059)

3X

2.60 (.102)

2.20 (.087)

IRFPE30

56 57

5.30 (.209)

4.70 (.185)

4

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC.

LEAD ASSIGNMENTS

Hexfet

0.80 (.031)

0.40 (.016)

035H

LEAD ASSIGNMENTS

1 - Gate 2 - Drain 3 - Source 4 - Drain

PART NUMBER

DAT E CODE YEAR 0 = 2000 WE EK 35 LINE H

1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

IGBT 1 - Gate 2 - Coll ector 3 - Emitter 4 - Coll ector

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.12/03

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Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/