Datasheet irg4ibc30fd Datasheet

PD- 91751A

IRG4IBC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH

Fast CoPack IGBT

ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

FeaturesFeatures

• Very Low 1.59V votage drop

• 2.5kV, 60s insulation voltage



• 4.8 mm creapage distance to heatsink

• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

• IGBT co-packaged with HEXFRED

TM

ultrafast,

ultrasoft recovery antiparallel diodes

• Tighter parameter distribution

• Industry standard Isolated TO-220 Fullpak

TM

G

n-channel

outline

Benefits

• Simplified assembly

• Highest efficiency and power density

• HEXFRED

TM

antiparallel Diode minimizes

switching losses and EMI

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 20.3 IC @ TC = 100°C Continuous Collector Current 11 I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 8.5 I

FM

Visol RMS Isolation Voltage, Terminal to Case 2500 V V

GE

PD @ TC = 25°C Maximum Power Dissipation 45 PD @ TC = 100°C Maximum Power Dissipation 18 T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current  120 A Clamped Inductive Load Current  120

Diode Maximum Forward Current 120

Gate-to-Emitter Voltage ± 20

Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

C

E

TO-220 FULLPAK

V

= 600V

CES

V

CE(on) typ.

= 1.59V

@VGE = 15V, IC = 17A

W

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJC

R

θJA

Wt Weight 2.0 (0.07) ––– g (oz)

Junction-to-Case - IGBT ––– 2.8 Junction-to-Case - Diode ––– 4.1 °C/W Junction-to-Ambient, typical socket mount ––– 65

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3/26/99

IRG4IBC30FD

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage –– – 0.69 ––– V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage ––– 1.59 1.8 IC = 17A VGE = 15V

––– 1.99 ––– V IC = 31A See Fig. 2, 5 ––– 1.70 ––– IC = 17A, TJ = 150°C

V

∆V

g I

CES

GE(th)

fe

Gate Threshold Voltage 3 .0 ––– 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage ––– - 11 – –– mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  6.1 10 ––– S VCE = 100V, IC = 17A Zero Gate Voltage Collector Current ––– ––– 250 µ A VGE = 0V, VCE = 600V

––– ––– 2500 VGE = 0V, VCE = 600V, TJ = 150°C

V

FM

Diode Forward Voltage Drop ––– 1. 4 1.7 V IC = 12A See Fig. 13

––– 1.3 1.6 IC = 12A, TJ = 150°C

I

GES

Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Total Gate Charge (turn-on) ––– 51 77 IC = 17A Qg e Gate - Emitter Charge (turn-on) ––– 7 .9 12 nC VCC = 400V See Fig. 8 Q t

d(on)

t

r

t

d(off)

t

f

E E E t

d(on)

t

r

t

d(off)

t

f

E L C C C t

rr

gc

on off ts

ts

E

ies oes res

Gate - Collector Charge (turn-on) ––– 19 28 VGE = 15V

Turn-On Delay Time ––– 42 ––– TJ = 25°C

Rise Time ––– 26 ––– n s IC = 17A, VCC = 480V

Turn-Off Delay Time ––– 230 350 VGE = 15V, RG = 23Ω

Fall Time ––– 160 230 Energy losses include "tail" and

Turn-On Switching Loss ––– 0.63 ––– diode reverse recovery.

Turn-Off Switching Loss ––– 1.39 ––– mJ See Fig. 9, 10, 11, 18

Total Switching Loss ––– 2.02 3.9

Turn-On Delay Time ––– 42 ––– TJ = 150°C, See Fig. 9, 10, 11, 18

Rise Time ––– 27 ––– n s IC = 17A, VCC = 480V

Turn-Off Delay Time ––– 31 0 ––– VGE = 15V, RG = 23Ω

Fall Time ––– 310 ––– Energy losses include "tail" and

Total Switching Loss ––– 3. 2 ––– mJ diode reverse recovery.

Internal Emitter Inductance ––– 7.5 ––– n H Measured 5mm from package

Input Capacitance ––– 1100 ––– VGE = 0V

Output Capacitance ––– 74 ––– pF VCC = 30V See Fig. 7

Reverse Transfer Capacitance ––– 14 ––– ƒ = 1.0MHz

Diode Reverse Recovery Time ––– 42 60 ns TJ = 25°C See Fig.

––– 80 120 TJ = 125°C 14 IF = 12A

I

rr

Diode Peak Reverse Recovery Current ––– 3.5 6.0 A TJ = 25°C See Fig.

––– 5.6 10 TJ = 125°C 15 VR = 200V

Q

rr

Diode Reverse Recovery Charge ––– 80 180 n C TJ = 25°C See Fig.

––– 220 600 TJ = 125°C 16 di/dt 200A/µs

di

/dt Diode Peak Rate of Fall of Recovery ––– 18 0 ––– A/µs TJ = 25°C See Fig.

(rec)M

During t

b

––– 120 ––– TJ = 125°C 17

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IRG4IBC30FD

A

16

12

Square wave:

8

LOAD CURRENT (A)

4

0

0.1 1 10 100

60 % of ra ted v o l tage

I

Ideal diodes

For both:

Duty cycle: 50% T = 125°C

J

T = 9 0° C

sink

Gate drive as specified

Power Dissipation = W

13

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

1000

T = 25°C

100

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

CE

J

T = 150°C

J

V = 15V

GE

20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

1000

100

T = 150°C

J

T = 25°C

10

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12 13

V , Gate-to-Emitter Voltage (V)

GE

J

V = 50V

CC

5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

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IRG4IBC30FD

A

25

20

15

10

5

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs. Case

Temperature

10

2.5

V = 15V

GE

80µs PULSE WIDTH

I = 34A

C

2.0

I = 17A

C

1.5

I = 8.5A

C

CE

V , Collector-to-Emitter Voltage (V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

J

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

D = 0.50

thJC

1

0.20

0.10

0.05

0.1

0.02

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

1 2

P

DM

t

1

t

2

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4IBC30FD

A

g

A

2000

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100

VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce SHORTED Cres = Cce Coes = Cce + Cgc

C

ies

C

oes

C

res

V , Collector-to-Emitter Voltage (V)

CE

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

2.20

V = 480V

CC

V = 15V

GE

T = 25°C

J

I = 17A

C

2.10

20

V = 400V

CE

I = 17A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 102030405060

Q , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

I = 34A

C

I = 17A

C

2.00

1.90

Total Switchig Losses (mJ)

1.80 0 20406080

R , Gate Resistance (

G

Ω

)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

A

1

Total Switchig Losses (mJ)

R = 23

G

V = 15V

GE

V = 480V

CC

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

Ω

T , Junction Temperature (°C)

J

I = 8.5A

C

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

A

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IRG4IBC30FD

)

8.0

R = 23

G

T = 150°C

J

V = 480V

CC

V = 15V

GE

6.0

Ω

1000

100

V = 2 0 V

GE

T = 12 5 °C

J

4.0

2.0

Total Switchig Losses (mJ)

0.0 0 10203040

I , Collector-to-Emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

F

T = 150°C

J

T = 125°C

10

J

T = 25 °C

J

SAFE OPERATING AREA

10

C

I , Collec tor-to-E m itter Cu rren t (A)

A

1

1 10 100 1000

V , Collector-to-Em itter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

Instantaneous Forward Current - I (A)

1

0.4 0.8 1.2 1.6 2.0 2.4

Forward Voltage D ro p - V (V

FM

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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IRG4IBC30FD

)

(A/µs)

)

160

V = 200V

R

T = 125°C

J

T = 25°C

J

120

I = 24 A

F

I = 1 2 A

F

80

rr

t - (ns)

40

I = 6.0A

F

100

V = 2 00V

R

T = 125°C

J

T = 25°C

J

I = 24 A

F

I = 12 A

10

IRR M

I - (A)

I = 6.0 A

F

0

100 1000

di /dt -

f

Fig. 14 - Typical Reverse Recovery vs. dif/dt

600

V = 200V

R

T = 125°C

J

T = 25°C

J

400

I = 2 4A

RR

Q - (n C )

I = 1 2 A

200

I = 6.0 A

F

0

100 1000

F

di /dt - (A/µs

f

F

1

100 1000

di /dt - (A/µs

f

Fig. 15 - Typical Recovery Current vs. dif/dt

10000

V = 200V

R

T = 125°C

J

T = 25°C

J

1000

100

di(rec)M /dt - (A/µ s)

10

100 1000

I = 6.0 A

F

I = 24 A

F

d i /d t - (A/µs

f

I = 12 A

F

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di

/dt vs. dif/dt

(rec)M

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IRG4IBC30FD

Same type device as D.U.T.

off(diode)

430µF

, trr, Qrr, Irr, t

d(on)

D.U.T.

, tr, t

80% of Vce

Fig. 18a - Test Circuit for Measurement of

I

, Eon, E

LM

d(off)

V

ge

V

C

90%

10%

5%

I

C

t

d(on)

, t

f

10%

t

r

E

on

E = (E +E )

90%

t

d(off)

ts on off

t

f

E

off

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

, t

d(off)

, t

f

E

off

t=5µs

GATE VOLTAG E D.U.T.

Vcc

10% +Vg

10% Ic

td(on)

Vce

tr

t1

90% Ic

5% Vc e

+Vg

DUT VO LTAGE AND CURRE NT

Ipk

Ic

t2

Vce ie dt

Eon =

∫

t1

t2

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

d(on)

, t

r

on

Ic

tx 10% Vc c

Vpk

DIODE REVE RSE RECOVERY ENERGY

Irr

trr

10% Irr

DIODE RECO V E RY W AVEFO RMS

Erec =

t3

t4

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

rr

Qrr =

∫

t3

id dt

∫

tx

t4

Vd id dt

trr

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Vcc

Vg

GATE SIGNAL DEVICE UNDE R TE ST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

IRG4IBC30FD

t0

t1

t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

D.U.T.

50V

6000µF 100V

1000V

L

V *

c

Figure 19. Clamped Inductive Load Test Circuit

0 - 480V

Figure 20. Pulsed Collector Current

Test Circuit

RL=

480V

4 X IC @25°C

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IRG4IBC30FD

Notes:

 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)  V

=80%(V

CC

 Pulse width ≤ 80µs; duty factor ≤ 0.1%.  Pulse width 5.0µs, single shot.  t = 60s, f = 60Hz

Case Outline  TO-220 FULLPAK

), VGE=20V, L=10µH, RG = 23Ω (figure 19)

CES

16.00 (.6 30)

15.80 (.6 22)

13.70 (.5 40)

13.50 (.5 30)

1.40 (.055)

3X

1.05 (.042)

2.54 (.10 0) 2X

10.60 (.4 17)

10.40 (.4 09)

1 2 3

3.70 (.145)

3.20 (.126)

1.15 (.045) MIN .

3.30 (.130)

3.10 (.122)

0.90 (.035)

3X

0.70 (.028)

0.25 (.01 0)

3.40 (.133 )

ø

3.10 (.123 )

- A -

- B -

M

A M B

4.80 (.189)

4.60 (.181)

7.10 (.28 0)

6.70 (.26 3)

2.80 (.110)

2.60 (.102)

NOTES: 1 DIMENSIONING & TOLERANCING

P ER A N SI Y 1 4 .5 M , 1982 2 CONTROLLING DIMENSION: INCH.

0.48 (.019)

3X

0.44 (.017)

2.85 (.112)

2.65 (.104)

LEAD ASSIGNMENTS

LEAD ASSIGMENTS

1 - G A TE

1- GATE

2 - D R A IN

2- COLLECTOR

3 - S O U R C E

3- EMITTER

MINIMUM C REEPAG E DISTANCE BETW EEN A-B-C -D = 4.80 (.189)

C

D

A

B

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936

http://www.irf.com/ Data and specifications subject to change without notice. 3/99

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