Datasheet IRG4BC40UPBF Specification

PD - 95428

C

G

TO-220AB

IRG4BC40UPbF

INSULATED GATE BIPOLAR TRANSISTOR

UltraFast Speed IGBT

Features

 UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3  Industry standard TO-220AB package  Lead-Free

E

n-channel

V

= 600V

CES

V

CE(on) typ.

= 1.72V

@VGE = 15V, IC = 2 0A

Benefits

 Generation 4 IGBTs offer highest efficiency available  IGBTs optimized for specified application conditions  Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 40 IC @ TC = 100°C Continuous Collector Current 20 A I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 160 PD @ TC = 100°C Maximum Power Dissipation 65 T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current  160 Clamped Inductive Load Current  160 Gate-to-Emitter Voltage ±20 V Reverse Voltage Avalanche Energy  15 mJ

Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)

W

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θCS

R

θJA

Wt Weight ------ 2 (0.07) ------ g (oz)

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Junction-to-Case ------ ------ 0.77 Case-to-Sink, flat, greased surface ------ 0.50 ------ °C/W Junction-to-Ambient, typical socket mount ------ ------ 80

06/17/04

IRG4BC40UPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(on)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage  18 ---- ---- V VGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage ---- 1.72 2.1 IC = 20A VGE = 15V

---- 2.15 ---- V I

---- 1.7 ---- I

= 40A

C

= 20A, TJ = 150°C

C

Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  11 18 ---- S VCE = 100V, IC = 20A

---- ---- 250 VGE = 0V, VCE = 600V

Zero Gate Voltage Collector Current ---- ---- 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C

---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current ---- ---- ±100 n A VGE = ±20V

Total Gate Charge (turn-on) ---- 100 150 IC = 20A Gate - Emitter Charge (turn-on) ---- 16 25 nC VCC = 400V See Fig. 8 Gate - Collector Charge (turn-on) ---- 40 60 VGE = 15V Turn-On Delay Time ---- 34 ---- TJ = 25°C Rise Time ---- 19 ---- ns IC = 20A, VCC = 480V Turn-Off Delay Time ---- 110 175 VGE = 15V, RG = 10Ω Fall Time ---- 120 180 Energy losses include "tail" Turn-On Switching Loss ---- 0.32 ---Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 10, 11, 13, 14 Total Switching Loss ---- 0.67 1.0 Turn-On Delay Time ---- 30 ---- TJ = 150°C, Rise Time ---- 19 ---- ns IC = 20A, VCC = 480V Turn-Off Delay Time ---- 220 ---- VGE = 15V, RG = 10Ω Fall Time ---- 160 ---- Energy losses include "tail" Total Switching Loss ---- 1.4 ---- mJ See Fig. 13, 14 Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package Input Capacitance ---- 2100 ---- VGE = 0V Output Capacitance ---- 140 ---- pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance ---- 34 ----  = 1.0MHz

See Fig. 2, 5

Notes:

 Repetitive rating; V

= 20V, pulse width limited by

GE

 Pulse width ≤ 80µs; duty factor ≤ 0.1%.

max. junction temperature. ( See fig. 13b )

 V

= 80%(V

CC

CES

), V

= 20V, L = 10µH, RG = 10Ω,

GE

 Pulse width 5.0µs, single shot.

(see fig. 13a)

 Repetitive rating; pulse width limited by maximum

junction temperature.

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IRG4BC40UPbF

A

CE

A

1

2

3

4

5

6

0

A

)

t ( A

rren u

0

Square wave:

60% of rated voltage

For both :

Duty cycle: 50% T = 125°C

J

T = 90°C

sink

Gate drive as specified

Power Dissipation = 28W

Triangular wave:

I

Clamp vol tage: 80% of rated

C

0

oad L

0

0.1 1 10 10

I

Ideal diodes

f, Frequ ency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I

1000

of fundamental; for triangular wave, I=IPK)

RMS

1000

100

10

C

I , Collector-to-Emitter Current (A)

1

0.1 1 10

T = 25°C

J

T = 150°C

J

V = 15V

GE

20µs PULSE WIDTH

V , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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TC = 25 °C

100

T = 150 °C

J

T = 25°C

10

C

I , Collector-to-Emitter Current (A)

1

4681012

V , Gate-to-Emitter Voltage (V)

GE

J

V = 10V

CC

5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

IRG4BC40UPbF

0

A

J

0

C

A

40

30

20

10

V = 15V

GE

Maximum DC Collector Current (A)

0

25 50 75 100 125 15

T , Case Temperature (°C)

Fig. 4 - Maximum Collector Current vs. Case

Temperature

1

2.5

V = 15V

GE

80µs PULSE WIDTH

I = 40A

C

2.0

C

I = 20A

1.5 C

I = 10A

CE

V , Collector - to-Emitter Vol t age (V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 16

T , Junction Temperature (°C)

Fig. 5 - Collector-to-Emitter Voltage vs.

Junction Temperature

D = 0.50

thJC

0.20

0.1

0.10

0.05 SINGLE PULSE

Thermal Response (Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

DM

J

1

P

DM

t

1

t

2

1

thJC

C

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4BC40UPbF

0

A

0

A

0

A

J

4000

3000

2000

C, Capac itance (pF)

1000

0

11010

V = 0V, f = 1MHz

GE

C = C + C , C SHORTED

ies ge gc ce

C = C

res gc

C = C + C

oes ce gc

C

ies

C

oes

C

res

V , Collector-to-Emitter Voltage (V)

CE

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

1.1

V = 480V

CC

V = 15V

GE

T = 25°C

J

I = 20A

1.0

C

20

V = 400V

CE

I = 20A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 20 40 60 80 100 12

Q , Total Gate Charge (nC)

g

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 10 V = 15V V = 480V

G GE CC

Ω

I = 40A

C

0.9

0.8

0.7

Total Swit chi ng Losses (mJ)

0.6 0 102030405060

R , Gate Resistance (Ω)

G

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

1

Total Swit chi ng Losses (mJ)

A

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 16

T , Junction Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

I = 20A

C

I = 10A

C

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IRG4BC40UPbF

C

A

0

4.0

R = 10 T = 150°C V = 480V V = 15V

3.0

2.0

1.0

G J

CC GE

Ω

Total Swit chi ng Losses (mJ)

0.0 0 1020304050

I , Collector-to-Emitter Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

1000

V = 20V

GE

T = 125°C

J

100

SAFE OPERATING AREA

10

C

I , Collector-to-Emitter Current (A)

1

1 10 100 100

V , Collector-to-Emitter V o lta g e (V)

CE

Fig. 12 - Turn-Off SOA

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IRG4BC40UPbF

s

5

.

I

L

V *

50V

* Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id.

1000V

c

C

Fig. 13a - Clamped Inductive

Load Test Circuit

L

Driver*

0V

1000V

c

d

D.U.T.

V

RL =

0 - 480V

480µF 960V

d

480V

4

X IC@25°C

Fig. 13b - Pulsed Collector

Current Test Circuit

C

D.U.T

C

e

Fig. 14a - Switching Loss

Test Circuit

* Driver same type as D.U.T., VC = 480V

c

d

10%

t

r

E

on

E = (E +E )

ts on off

e

V

C

90%

10%

5%

I

C

t

d(on)

t

d(off)

90%

Fig. 14b - Switching Loss

Waveforms

t

f

E

off

t=5µ

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IRG4BC40UPbF

K

R

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

10.29 (.405)

4

1 2 3

3.78 (.149)

3.54 (.139)

- A -

6.47 (.255)

6.10 (.240)

1.15 (.045) MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

3X

0.69 (.027)

0.36 (.014) M B A M

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

3X

LEAD ASSIGNMENTS

HEXFET

1 - GATE 2 - DRAIN

1- GATE

3 - SOURCE

2- DRAIN 3- SOURCE

4 - DRAIN

4- DRAIN

0.55 (.022)

0.46 (.018)

TO-220AB Part Marking Information

EXAMPLE:

THIS IS AN IR F1010 LOT CODE 1789 ASS EMBL ED ON WW 19, 1997 IN T HE AS S E MBLY L INE "C"

Note: "P" in assembly line position indicates "Lead-Free"

INT E RNATIONAL

RECTIFIER

LOGO

AS S E MBL Y LOT CODE

IGBTs, CoPAC 1- GATE

2- COLLECTOR 3- EMITTER 4- COLLECTOR

PART NUMBE

DATE CODE YEAR 7 = 1997 WEEK 19 LINE C

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

Visit us at www.irf.com for sales contact information. 06/04

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TAC Fax: (310) 252-7903