Page 1
Parameter Max. Units
V
CES
Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 49
IC @ TC = 100°C Continuous Collector Current 27 A
I
CM
Pulsed Collector Current Q 200
I
LM
Clamped Inductive Load Current R 200
V
GE
Gate-to-Emitter Voltage ± 20 V
E
ARV
Reverse Voltage Avalanche Energy S 15 mJ
PD @ TC = 25°C Maximum Power Dissipation 160
PD @ TC = 100°C Maximum Power Dissipation 65
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
IRG4BC40F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91454B
E
C
G
n-channel
FeaturesFeatures
FeaturesFeatures
Features
• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Benefits
V
CES
= 600V
V
CE(on) typ.
= 1.50V
@VGE = 15V, IC = 27A
4/17/2000
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.77
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient, typical socket mount ––– 80
Wt Weight 2.0 (0.07) ––– g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
TO-220AB
www.irf.com 1
Page 2
IRG4BC40F
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 100 150 IC = 27A
Q
ge
Gate - Emitter Charge (turn-on) — 15 23 nC VCC = 400V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) — 35 53 VGE = 15V
t
d(on)
Turn-On Delay Time — 26 —
t
r
Rise Time — 18 — TJ = 25°C
t
d(off)
Turn-Off Delay Time — 240 360 IC = 27A, VCC = 480V
t
f
Fall Time — 170 250 VGE = 15V, RG = 10Ω
E
on
Turn-On Switching Loss — 0.37 — Energy losses include "tail"
E
off
Turn-Off Switching Loss — 1.81 — mJ See Fig. 10, 11, 13, 14
E
ts
Total Switching Loss — 2.18 2.8
t
d(on)
Turn-On Delay Time — 25 — TJ = 150°C,
t
r
Rise Time — 21 — IC = 27A, VCC = 480V
t
d(off)
Turn-Off Delay Time — 380 — VGE = 15V, RG = 10Ω
t
f
Fall Time — 310 — Energy losses include "tail"
E
ts
Total Switching Loss — 3.9 — mJ See Fig. 13, 14
L
E
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
C
ies
Input Capacitance — 2200 — VGE = 0V
C
oes
Output Capacitance — 140 — pF VCC = 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 29 —ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 0.70 — V/°CVGE = 0V, IC = 1.0mA
— 1.50 1.7 I
C
= 27A VGE = 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage — 1.85 — IC = 49A See Fig.2, 5
— 1.56 — I
C
= 27A , TJ = 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆V
GE(th)
/∆TJTemperature Coeff. of Threshold Voltage — -12 — mV/°CVCE = VGE, IC = 250µA
g
fe
Forward Transconductance U 9.2 12 — SVCE = 100V, IC = 27A
——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C
——1000 VGE = 0V, VCE = 600V, TJ = 150°C
I
GES
Gate-to-Emitter Leakage Current ——±100 n A VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
Notes:
Q Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
Page 3
IRG4BC40F
www.irf.com 3
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=IPK)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
5 6 7 8 9 10 11 12
C
I , Collector-to-Emitter Current (A)
GE
T = 25°C
T = 150°C
J
J
V , Gate-to-Emitter Voltage (V)
A
V = 50V
5µs PULSE WIDTH
CC
1
10
100
1000
1 10
CE
V , Collector-to-Emitter Voltage (V
)
T = 150°C
T = 25°C
J
J
V = 15V
20µs PULSE W IDTH
GE
A
I
C
, Collector-to-Emitter Current (A)
Load Current ( A )
0
10
20
30
40
50
60
0.1 1 10 100
f, Frequency (kHz
)
A
60% of rated
voltage
I
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
T = 125°C
T = 90° C
Gate drive as specified
sink
J
Triangular wave:
I
Clamp voltage:
80% of rated
Power D issipation = 28W
Page 4
IRG4BC40F
4 www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
0
10
20
30
40
50
25 50 75 100 125 150
Maximum DC Collector Current (A)
T , Case Temperature (°C)
C
V = 15V
GE
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
CE
V , Collector-to-Emitter Voltage (V)
V = 15V
80µs PULSE WIDTH
GE
A
T , Junction Temperature
(°C)
J
I = 54A
I = 27A
I = 14A
C
C
C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SIN GLE PU LS E
(THERMAL RESPONSE)
Thermal Response (Z )
P
t
2
1
t
DM
No tes:
1. D uty fac tor D = t / t
2. Pe ak T = P x Z + T
1
2
J
DM
thJC
C
Page 5
IRG4BC40F
www.irf.com 5
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
4
8
12
16
20
0 20 40 60 80 100 120
GE
V , Gate-to-Emitter Voltage (V)
g
Q , Total Gate Charge (nC)
A
V = 400V
I = 27A
CE
C
0.1
1
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
Total Switching Losses (mJ)
A
T , Junction Temperature (°C)
J
R = 10
Ω
V = 15V
V = 480V
I = 14A
I = 27A
I = 54A
G
GE
CC
C
C
C
2.10
2.20
2.30
2.40
2.50
2.60
0 102030405060
A
V = 480V
V = 1 5V
T = 2 5°C
I = 2 7A
R , Gate Resistance
(Ω)
CC
GE
J
C
G
Total Switchig Losses (mJ)
0
1000
2000
3000
4000
1 10 100
CE
V , Collector-to-Emitter Voltage (V
)
A
C
ies
C
res
C
oes
VGE = 0V f = 1 MHz
Cies = Cge + Cgc + Cce SHORTED
Cres = Cce
Coes = Cce + Cgc
C , Capacitance ( pF)
Page 6
IRG4BC40F
6 www.irf.com
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
0
2
4
6
8
10
0 102030405060
C
Total Switching Losses (mJ)
R = 10
Ω
T = 150°C
V = 480V
V = 15V
I , Collector-to-Emitter Current (A
)
A
G
J
CC
GE
1
10
100
1000
1 10 100 1000
C
CE
GE
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
SAFE OPERATING AREA
V = 2 0V
T = 125°C
GE
J
Page 7
IRG4BC40F
www.irf.com 7
480V
4
X IC@25°C
D.U.T.
50V
L
V *
C
Q
R
* Driver same t
y
p
e as D.U.T.; Vc = 80% of V ce(max
)
* Note: Due to the 50V power su
p
ply, p
ulse width and inductor
will in cre ase to o bta in ra ted Id.
1000V
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
480µF
960V
0 - 480V
RL =
t=5µ s
d(on)
t
t
f
t
r
90%
t
d(off)
10%
90%
10%
5%
V
C
I
C
E
on
E
off
ts on off
E = (E +E )
Q
R
S
Fig. 14b - Switching Loss
Waveforms
50V
Driver*
1000V
D.U.T.
I
C
C
V
Q
R
S
L
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
Page 8
IRG4BC40F
8 www.irf.com
Case Outline and Dimensions TO-220AB
0.55 (.0 22)
0.46 (.0 18)
3 X
2.92 (.115)
2.64 (.104)
1.32 (.052)
1.22 (.048)
- B -
4.69 (.185)
4.20 (.165)
3.78 (.149)
3.54 (.139)
- A -
6.47 (.255)
6.10 (.240)
1.15 (.0 45)
MIN
4.06 (.160)
3.55 (.140)
3 X
3.96 (.16 0
)
3.55 (.14 0
)
3 X
0.93 (.037
)
0.69 (.027
)
0.36 (.014) M B A M
10.54 (.415)
10.29 (.405)2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1.40 (.055)
1.15 (.045)
3 X
2.54 (.100)
2X
1 2 3
4
CONFORMS TO JEDEC OUTLINE TO-220AB
Dimensions in Millimeters and (Inches
)
LEAD ASSIGNMENTS
1 - G A TE
2 - C OLLE C TO R
3 - E MITT ER
4 - C OLLE C TO R
NOTES:
1 DIMENSIONS & TOLERANCING
PER AN SI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 D IME N SIO N S A R E S H OW N
MILLIM ET E RS (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO -220 A B.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
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