Page 1
PD - 94069
IRG4BC30S-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
Standard Speed IGBT
C
V
CES
= 600V
• Generation 4 IGBT design provides tight
parameter distribution and high efficiency
G
E
V
CE(on) typ.
= 1.4V
@VGE = 15V, IC = 18A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
D2Pak
Absolute Maximum Ratings
Parameter Max. Units
V
CES
IC @ TC = 25°C Continuous Collector Current 34
IC @ TC = 100°C Continuous Collector Current 18 A
I
CM
I
LM
V
GE
E
ARV
PD @ TC = 25°C Maximum Power Dissipation 100
PD @ TC = 100°C Maximum Power Dissipation 42
T
J
T
STG
Collector-to-Emitter Breakdown Voltage 60 0 V
Pulsed Collector Current 68
Clamped Inductive Load Current 68
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy 10 mJ
Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
W
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Wt Weight 1.44 ––– g (oz)
www.irf .com 1
Junction-to-Case ––– 1.2
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient, typical socket mount –– – 40
12/28/00
Page 2
IRG4BC30S-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
V
CE(ON)
V
GE(th)
∆V
GE(th)
g
fe
I
CES
I
GES
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A
/∆T
Temperature Coeff. of Breakdown Voltage — 0.75 — V/°C VGE = 0V, IC = 1.0mA
J
— 1.40 1.6 IC = 18A VGE = 15V
Collector-to-Emitter Saturation Voltage — 1.84 — IC = 34A See Fig. 2, 5
— 1.45 — IC = 18A , TJ = 150°C
V
Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance 6.0 11 — S VCE = 100V, IC = 18A
Zero Gate Voltage Collector Current
— — 250 VGE = 0V, VCE = 600V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
µA
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge (turn-on) — 50 75 IC = 18A
Gate - Emitter Charge (turn-on) — 7.3 1 1 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 17 26 VGE = 15V
Turn-On Delay Time — 22 —
Rise Time — 18 — TJ = 25°C
Turn-Off Delay Time — 540 81 0 IC = 18A, VCC = 480V
ns
Fall Time — 390 59 0 VGE = 15V, RG = 23Ω
Turn-On Switching Loss — 0.26 — Energy losses include "tail"
Turn-Off Switching Loss — 3.45 — mJ See Fig. 9, 10, 14
Total Switching Loss — 3.71 5.6
Turn-On Delay Time — 21 — TJ = 150°C,
Rise Time — 19 — IC = 18A, VCC = 480V
Turn-Off Delay Time — 790 — VGE = 15V, RG = 23Ω
ns
Fall Time — 76 0 — Energy losses include "tail"
Total Switching Loss — 6.55 — mJ See Fig. 11, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 1100 — VGE = 0V
Output Capacitance — 72 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 13 — ƒ = 1.0MHz
Repetitive rating; V
= 20V, pulse width limited by
GE
max. junction temperature (See fig. 13b).
V
CC
(See fig. 13a).
= 80%(V
CES
), V
= 20V, L = 10µH, RG = 23Ω,
GE
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2 www.irf.com
Page 3
50
)
40
30
Square wave:
60 % of ra ted
20
v o l tage
Load Current ( A )
IRG4BC30S-S
For both:
Duty cycle: 50%
T = 125°C
J
T = 90° C
sink
Gate drive as specified
Power Dissipation = W
I
21
Triangular wave :
I
Clamp voltage:
80% of rated
10
0
0.1 1 10 100
Ideal diodes
f, Frequency (kHz
Fig. 1 - Typical Load Current vs. Frequency
100
10
o
T = 25 C
J
o
T = 150 C
J
(Load Current = I
of fundamental)
RMS
100
10
1
o
T = 150 C
J
o
T = 25 C
J
A
C
I , Collector-to-Emitter Current (A)
1
1 10
V , Collector-to-Emitter Voltage (V)
CE
V = 15V
GE
20µs PULSE WIDTH
C
I , Collector-to-Emitter Current (A)
0.1
5 6 7 8 9 10
V , Gate-to-Emitter Voltage (V)
GE
V = 50V
CC
5µs PULSE WIDTH
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
www.irf.com 3
Page 4
IRG4BC30S-S
35
30
25
20
15
10
5
Maximum DC Collector Current(A)
0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig. 4 - Maximum Collector Current vs. Case
Temperature
10
3.0
V = 15V
GE
80 us PULSE WIDTH
2.5
2.0
1.5
CE
V , Collector-to-Emitter Voltage(V)
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
I = A36
C
I = A18
C
9.0 A
I = A9
C
°
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
thJC
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
P
DM
t
1 2
1
t
2
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4 www.irf.com
Page 5
IRG4BC30S-S
2000
1500
1000
C, Capacitance (pF)
500
0
1 10 100
V
=
0V,
GE
C
=
iesgegc , ce
C
=
resgc
C
=
oes cegc
V , Collector-to-Emitter Voltage (V)
CE
f = 1MHz
C
+ C
C
C
C
ies
C
oes
C
res
C SHORTED
+ C
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
3.80
V = 480V
CC
V = 15V
GE
3.76
3.72
T = 25 C
J
I = 18A
C
°
20
V = 400V
CC
I = 18A
C
16
12
8
4
GE
V , Gate-to-Emitter Voltage (V)
0
0 10 20 30 40 50 60
Q , Total Gate Charge (nC)
G
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
R = 23Ohm
G
V = 15V
GE
V = 480V
CC
10
Ω
I = A
I = A
I = A
36
C
18
C
9.0 A
9
C
3.68
1
3.64
Total Switching Losses (mJ)
3.60
0 10 20 30 40 50
R , Gate Resistance (Ohm)
G
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Total Switching Losses (mJ)
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C )
J
°
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
www.irf.com 5
Page 6
IRG4BC30S-S
15.0
R = 23Ohm
T = 150 C
V = 480V
V = 15V
12.0
9.0
6.0
3.0
Total Switching Losses (mJ)
0.0
0 10 20 30 40 50
Ω
G
J
CC
GE
°
I , Collector-to-emitter Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
V = 20V
GE
T = 125 C
J
100
10
C
I , Collector-to-Emitter Current (A)
1
1 10 100 1000
o
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
CE
Fig. 12 - Turn-Off SOA
6 www.irf.com
Page 7
IRG4BC30S-S
y
p
)
p
ply, p
50V
* Driver same t
* Note: D ue to the 50V pow er s u
will in crease to obtain ra t e d Id.
e as D.U.T.; Vc = 80% of Vce(max
Fig. 13a - Clamped Inductive
Load Test Circuit
50V
1000V
1000V
L
V *
C
ulse width and inductor
D.U.T.
L
Driv e r*
480V
RL =
4
0 - 480V
480µF
960V
X IC@25°C
Fig. 13b - Pulsed Collector
Current Test Circuit
I
C
V
C
D.U.T.
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
90%
V
C
90%
10%
5%
I
C
t
d(on)
10%
t
r
E
on
t
d(off)
E = (E +E )
ts on off
Fig. 14b - Switching Loss
Waveforms
t
f
E
off
t=5µs
www.irf.com 7
Page 8
IRG4BC30S-S
A
D2Pak Package Outline
10.54 (.415)
1.40 (.055)
MAX.
1.78 (.070)
1.27 (.050)
1.40 (.055)
3X
1.14 (.045)
5.08 (.200)
NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
10.29 (.405)
- A 2
1 3
15.49 (.610)
14.73 (.580)
0.93 (.037)
3X
0.69 (.027)
0.2 5 ( .0 10) M B A M
D2Pak Part Marking Information
4.69 (.185)
4.20 (.165)
5.28 (.208)
4.78 (.188)
0.55 (.022)
0.46 (.018)
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
LEAD ASSIGNMENTS
1 - G ATE
2 - D RAIN
3 - S OU R CE
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
INTERNATIONAL
RE CTIFIER
LO G O
A S SEMBLY
LO T CO D E
F530S
9246
9 B 1M
PART NUM B ER
DATE CODE
(YYW W )
YY = YEAR
WW = WEEK
8 www.irf.com
Page 9
D2Pak T ape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION
TRL
FEED DIRECTION
1.85 (.073)
1.65 (.065)
10.90 (.429)
10.70 (.421)
11.60 (.457)
11.40 (.449)
16.10 (.634)
15.90 (.626)
1.60 (.063)
1.50 (.059)
1.75 (.069)
1.25 (.049)
15.42 (.609)
15.22 (.601)
IRG4BC30S-S
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CON TROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
This product has been designed and qualified for the industrial market.
27.40 (1.079)
23.90 (.941)
4
60.00 (2.362)
MIN.
30.40 (1.197)
26.40 (1.039)
24.40 (.961)
3
MAX .
4
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
www.irf.com 9
Loading...