Datasheet IRG4BC30KPBF Specification

INSULATED GATE BIPOLAR TRANSISTOR

FeaturesFeatures

Features

FeaturesFeatures

• High short circuit rating optimized for motor control,
t

=10µs, @360V VCE (start), TJ = 125°C,

sc

VGE = 15V

• Combines low conduction losses with high
switching speed

• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations

Benefits

• As a Freewheeling Diode we recommend our
HEXFRED
minimum EMI / Noise and switching losses in the
Diode and IGBT

• Latest generation 4 IGBTs offer highest power
density motor controls possible

• This part replaces the IRGBC30K and IRGBC30M
devices

Absolute Maximum Ratings

TM

ultrafast, ultrasoft recovery diodes for

G

n-channel

PD - 91596A

IRG4BC30K

Short Circuit Rated

UltraFast IGBT

C

V

= 600V

CES

= 2.21V

E

V

CE(on) typ.

@VGE = 15V, IC = 16A

TO-220AB

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 28
IC @ TC = 100°C Continuous Collector Current 16 A
I

CM

I

LM

t

sc

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current Q 58
Clamped Inductive Load Current R 58
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ±20 V
Reverse Voltage Avalanche Energy S 260 mJ

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Wt Weight 1.44 ––– g

Junction-to-Case ––– 1.2
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 80

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4/24/2000

IRG4BC30K

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

sc

t

d(on)

t

r

t

d(off)

t

f

E

ts

E

on

E

off

E

ts

L

E

C

ies

C

oes

C

res

Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.54 — V/°CVGE = 0V, IC = 1.0mA

J

— 2.21 — IC = 14A

Collector-to-Emitter Saturation Voltage

— 2.21 2.7 I
— 2.88 — IC = 28A See Fig.2, 5

VV

— 2.36 — I

= 16A VGE = 15V

C

= 16A , TJ = 150°C

C

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -12 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance U 5.4 8.1 — SVCE = 100V, IC = 16A

——250 VGE = 0V, VCE = 600V

Zero Gate Voltage Collector Current ——2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C

——1100 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) — 67 100 IC = 16A
Gate - Emitter Charge (turn-on) — 11 16 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 25 37 VGE = 15V
Turn-On Delay Time — 26 —
Rise Time — 28 — TJ = 25°C
Turn-Off Delay Time — 130 200 IC = 16A, VCC = 480V

ns

Fall Time — 120 170 VGE = 15V, RG = 23Ω
Turn-On Switching Loss — 0.36 — Energy losses include "tail"
Turn-Off Switching Loss — 0.51 — mJ See Fig. 9,10,14
Total Switching Loss — 0.87 1.3
Short Circuit Withstand Time 10 —— µs VCC = 400V, TJ = 125°C

VGE = 15V, RG = 23Ω , V
Turn-On Delay Time — 25 — TJ = 150°C,
Rise Time — 29 — IC = 16A, VCC = 480V
Turn-Off Delay Time — 190 — VGE = 15V, RG = 23Ω

ns

Fall Time — 190 — Energy losses include "tail"
Total Switching Loss — 1.2 — mJ See Fig. 11,14
Turn-On Switching Loss — 0.26 — TJ = 25°C, VGE = 15V, RG = 23Ω
Turn-Off Switching Loss — 0.36 — IC = 14A, VCC = 480V
Total Switching Loss — 0.62 — Energy losses include "tail"
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 920 — VGE = 0V
Output Capacitance — 110 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 27 —ƒ = 1.0MHz

CPK

< 500V

Details of note Q through U are on the last page

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IRG4BC30K

)

35

30

25

20

Square wave:

60% of rated

15

Load Current ( A )

10

5

0

0.1 1 10 100

voltage

I

Ideal diodes

For both:

Duty cycle: 50%
T = 125°C

J

T = 90 °C

sink

Gate drive as specified

Power D issipation = 21W

Triangula r wave:

I

Clamp voltage:
80% of rated

f, Frequency (kHz

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

A

100

o

T = 25 C



J



10

1

C

I , Collector-to-Emitter Current (A)

0.1
1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE



20µs PULSE WIDTH

o

T = 150 C

J

100

o

T = 150 C



J

10

o

T = 25 C



1

C

I , Collector-to-Emitter Current (A)

0.1
5 10 15

J

V = 50V

CC



5µs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4BC30K

30

25

20

15

10

5

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs. Case

Temperature

10

4.0

V = 15V

GE



80 us PULSE WIDTH

3.0

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

TJ , Junction Temperature ( °C )

J



I = A32

C



I = A16

C

8.0A



I = A8

C

°

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

thJC

1

D = 0.50

0.20

0.10

0.1

0.05

Thermal Response (Z )

0.02

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE



(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

P

DM

t



1 2

1

t

2

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4BC30K

1500

1200

900

600

C, Capacitance (pF)

300

0

1 10 100

V

=

0V,

GE

C

=

iesgegc , ce

C

=

resgc



C

=

oes cegc

C



ies

C



oes

C



res

V , Collector-to-Emitter Voltage (V)

CE

f = 1MHz

C

+ C
C
C

C SHORTED

+ C

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

1.5

V = 480V

CC

V = 15V

GE

T = 25 C

J



I = 16A

C

°

20

V = 400V

CC



I = 16A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 20 40 60 80

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = Ohm

23Ω

G

V = 15V

GE



V = 480V

CC



I = A

C

32



I = A

16

C

1.0

Total Switching Losses (mJ)

0.5
0 10 20 30 40 50

R , Gate Resistance (Ohm)

G

Ω

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

1



I = A

C

Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

°

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

8.0A

8

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IRG4BC30K

4.0

3.2

2.4

1.6

0.8

Total Switching Losses (mJ)

0.0

23Ω

R = Ohm

G

T = 150 C

J

V = 480V

CC



V = 15V

GE

0 8 16 24 32 40

°

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

V = 20V

GE



T = 125 C

J

10

C

I , Collector-to-Emitter Current (A)

1

1 10 100 1000

o

SAFE OPERATING AREA



V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

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IRG4BC30K

y

p

)

p

ply, p

50V

Q

* Driver same t
* Note: D ue to the 50V pow er s u
will in crease t o ob tain rated Id.

e as D .U.T.; Vc = 80% o f V ce(max

Fig. 13a - Clamped Inductive

Load Test Circuit

50V

1000V

Q

1000V

L

V *

C

ulse width and inductor

D.U.T.

L

Driver*

R

480V

RL =

X IC@25°C

0 - 480V

480µF
960V

4

R

Fig. 13b - Pulsed Collector

Current Test Circuit

I

C

V

C

S

D.U.T.

Fig. 14a - Switching Loss

Test Circuit

* Driver same type
as D.U.T., VC = 480V

Q

R

90%

S

V

C

90%

10%

5%

I

C

t

d(on)

10%

t

r

E

on

t

d(off)

E = (E +E )

ts on off

Fig. 14b - Switching Loss

Waveforms

t

f

E

off

t=5µ s

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IRG4BC30K

)

)

)

)

)

Notes:

Q Repetitive rating; V

= 20V, pulse width limited by

GE

S Repetitive rating; pulse width limited by maximum

max. junction temperature. ( See fig. 13b )

R V

CC

(See fig. 13a)

= 80%(V

CES

), V

= 20V, L = 10µH, RG = 23Ω,

GE

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.

Case Outline and Dimensions  TO-220AB

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3 X

1.15 (.045)

2.54 (.100)
2X

10.54 (.415)

10.29 (.405)2.87 (.113)

4

1 2 3

3 X

0.36 (.014) M B A M

6.47 (.255)

6.10 (.240)

1.15 (.0 45)
M IN

3 X

4.06 (.160)

3.55 (.140)

0.93 (.037

0.69 (.027

3.78 (.149)

3.54 (.139)

- A -

3.96 (.1 6 0

3.55 (.1 4 0

4.69 (.185)

4.20 (.165)

junction temperature.

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

3 X

NOTES:
1 DIMENSIONS & TOLERANCING
PER AN SI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 D IME NS IO NS A R E SH O W N
MIL L IMETE RS (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO -2 2 0 A B.

0.55 (.0 22)

0.46 (.0 18)

LEAD ASSIGNMENTS
1 - G A T E
2 - C OL LE C T O R
3 - E MIT T ER
4 - C OL LE C T O R

CONFORMS TO JE DEC O UTLINE TO-220AB

Dimensions in M illimeters and (Inches

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Data and specifications subject to change without notice. 10/00

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Note: For the most current drawings please refer to the IR website at:

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