Datasheet IRG4BC30FDPBF Specification

PD -91451B

TO-220AB

IRG4BC30FD

INSULATED GATE BIPOLAR TRANSISTOR WITH

Fast CoPack IGBT

ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

FeaturesFeatures

• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFRED

TM

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

G

n-channel

bridge configurations

• Industry standard TO-220AB package

Benefits

• Generation -4 IGBT's offer highest efficiencies available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing

• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 31 IC @ TC = 100°C Continuous Collector Current 17 I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 12 I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current  120 A Clamped Inductive Load Current  120

Diode Maximum Forward Current 120 Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

qJC

R

qJC

R

qCS

R

qJA

Wt Weight ------ 2 (0.07) ------ g (oz)

Junction-to-Case - IGBT ------ ------ 1.2 Junction-to-Case - Diode ------ ------ 2.5 °C/W Case-to-Sink, flat, greased surface ------ 0.50 -----Junction-to-Ambient, typical socket mount ----- ----- 80

www.irf.com 1

C

V

= 600V

CES

V

CE(on) typ.

E

@VGE = 15V, IC = 17A

= 1.59V

W

12/8/98

IRG4BC30FD

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

DV

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA

/DT

Temperature Coeff. of Breakdown Voltage ---- 0.69 ---- V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage ---- 1.59 1.8 IC = 17A VGE = 15V

---- 1.99 ---- V IC = 31A See Fig. 2, 5

---- 1.70 ---- IC = 17A, TJ = 150°C V DV g I

CES

GE(th)

fe

Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA

/DTJTemperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  6.1 10 ---- S VCE = 100V, IC = 17A Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V

---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°C V

FM

Diode Forward Voltage Drop ---- 1.4 1.7 V IC = 12A See Fig. 13

---- 1.3 1.6 IC = 12A, TJ = 150°C I

GES

Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Total Gate Charge (turn-on) ---- 51 77 IC = 17A Qge Gate - Emitter Charge (turn-on) ---- 7.9 12 nC VCC = 400V See Fig. 8 Q t

d(on)

t

r

t

d(off)

t

f

E E E t

d(on)

t

r

t

d(off)

t

f

E L C C C t

rr

gc

on off ts

ts E

ies oes res

Gate - Collector Charge (turn-on) ---- 19 28 VGE = 15V

Turn-On Delay Time ---- 4 2 ---- TJ = 25°C

Rise Time ---- 26 ---- ns IC = 17A, VCC = 480V

Turn-Off Delay Time ---- 230 350 VGE = 15V, RG = 23W

Fall Time ---- 16 0 23 0 Energy losses include "tail" and

Turn-On Switching Loss ---- 0.63 ---- diode reverse recovery.

Turn-Off Switching Loss ---- 1.39 ---- mJ See Fig. 9, 10, 11, 18

Total Switching Loss ---- 2.02 3.9

Turn-On Delay Time ---- 42 ---- TJ = 150°C, See Fig. 9, 10, 11, 18

Rise Time ---- 27 ---- ns IC = 17A, VCC = 480V

Turn-Off Delay Time ---- 310 ---- VGE = 15V, RG = 23W

Fall Time ---- 31 0 ---- Energy losses include "tail" and

Total Switching Loss ---- 3.2 ---- mJ diode reverse recovery.

Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from package

Input Capacitance ---- 1100 ---- VGE = 0V

Output Capacitance ---- 74 ---- pF VCC = 30V See Fig. 7

Reverse Transfer Capacitance ---- 14 ---- ƒ = 1.0MHz

Diode Reverse Recovery Time ---- 42 60 ns TJ = 25°C See Fig.

---- 80 120 TJ = 125°C 14 IF = 12A

I

rr

Diode Peak Reverse Recovery Current ---- 3.5 6.0 A TJ = 25°C See Fig.

---- 5.6 10 TJ = 125°C 15 VR = 200V

Q

rr

Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig.

---- 220 600 TJ = 125°C 16 di/dt 200A/µs

di

/dt Diode Peak Rate of Fall of Recovery ---- 180 ---- A/µs TJ = 25°C See Fig.

(rec)M

During t

b

---- 12 0 ---- TJ = 125°C 17

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ge (V)

A

)

A

20

)

16

12

6 0 % o f ra te d voltage

8

Load Current ( A )

4

IRG4BC30FD

Duty cycle: 50% T = 125°C

J

T = 90°C

sink Ga te drive as specified Turn -o n los s es inc lud e effects of reverse recovery

Power Dissipation = 21W

I

0

0.1 1 10 100

f, Frequency (kHz

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

1000

T = 25°C

100

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Volta

CE

J

T = 150°C

J

V = 15V

GE

20µs PULSE WIDTH

of fundamental)

RMS

1000

100

T = 150°C

J

T = 25°C

10

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12 13

V , Gate-to-Emitter Voltage (V

GE

J

V = 50V

CC

5µs PULSE WIDTH

A

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

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IRG4BC30FD

A

)

40

30

20

10

V = 15 V

GE

Maximum DC Collector Current (A)

0

25 50 75 100 125 150

T , C a s e T e mp e ra tu re (°C)

C

Fig. 4 - Maximum Collector Current vs. Case

Temperature

10

2.5

V = 15V

GE

80µs PULSE WIDTH

I = 34A

C

2.0

I = 17A

C

1.5

I = 8.5A

C

CE

V , Collector-to-Emitter Voltage (V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C

J

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

thJC

1

D = 0.50

0.20

P

0.10

0.1

0.05

T h e rma l Respo nse (Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

SIN GLE PULSE (THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Note s:

1. D uty f acto r D = t / t

2. Pe ak T = P x Z + T

DM

J

DM

t

1

t

2

1

thJC

C

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4BC30FD

A

)

(

)

ge (V)

A

g

)

A

2000

1600

1200

800

C, Capacitance (pF)

400

0

1 10 100

VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce SHORTED Cres = Cce Coes = Cce + Cgc

C

ies

C

oes

C

res

V , Collector-to-Emitter Volta

CE

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

2.20

V = 480V

CC

V = 15V

GE

T = 25°C

J

I = 17A

C

2.10

20

V = 400V

CE

I = 17A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 102030405060

Q , Total Gate Charge (nC

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

I = 34A

C

I = 17A

C

2.00

1.90

Total Switchig Losses (mJ)

1.80 0 20406080

R , Gate Resistance

G

Ω

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

A

1

Total Switchig Losses (mJ)

R = 23

G

V = 15V

GE

V = 480V

CC

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

Ω

T , Junction Temperature (°C

J

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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I = 8.5A

C

IRG4BC30FD

(A)

A

8.0

R = 23

G

T = 150°C

J

V = 480V

CC

V = 15V

GE

6.0

4.0

2.0

Ω

Total Switchig Losses (mJ)

0.0 0 10203040

I , Collector-to-Emitter Current

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

1000

V = 2 0V

GE

T = 12 5°C

J

100

SAFE OPERATING AREA

10

C

I , C o llec to r-to -E mitter C urre n t (A )

1

1 10 100 1000

V , C o lle c to r-to -Emitte r Vo lta g e (V )

CE

Fig. 12 - Turn-Off SOA

F

T = 150°C

J

T = 125°C

10

J

T = 25°C

J

Instantaneous Forward Current - I (A)

1

0.4 0.8 1.2 1.6 2.0 2.4

Forward Voltage Drop - V (V)

FM

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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IRG4BC30FD

160

V = 200V

R

T = 125°C

J

T = 25°C

J

120

I = 2 4A

F

I = 12A

F

80

rr

t - (n s )

40

0

100 1000

di /d t - (A/µ s )

f

I = 6 .0A

F

Fig. 14 - Typical Reverse Recovery vs. dif/dt

600

V = 200V

R

T = 125°C

J

T = 25°C

J

100

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 2 4A

F

I = 1 2A

10

IRRM

I - (A)

I = 6.0A

F

1

100 1000

F

di /dt - (A /µs )

f

Fig. 15 - Typical Recovery Current vs. dif/dt

10000

V = 200V

R

T = 125°C

J

T = 25°C

J

400

I = 2 4A

RR

F

Q - ( n C )

I = 12A

200

I = 6.0A

F

0

100 1000

F

di /d t - (A /µ s )

f

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di

1000

100

di(re c )M /d t - (A /µ s)

10

100 1000

I = 6.0A

F

I = 24 A

F

di /d t - (A/µ s )

f

(rec)M

I = 12A

F

/dt vs. dif/dt

www.irf.com 7

IRG4BC30FD

g

Same type device as D.U.T.

80% of Vce

Fig. 18a - Test Circuit for Measurement of

I

, Eon, E

LM

off(diode)

430µF

, trr, Qrr, Irr, t

d(on)

D.U.T.

, tr, t

d(off)

V

ge

V

C

90%

10%

5%

I

C

t

d(on)

, t

f

10%

t

r

E

on

E = (E +E )

90%

t

d(off)

ts on off

t

f

E

off

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

E

, t

d(off)

, t

f

off

t=5µs

GATE VOLTAGE D.U.T.

Vcc

10% +V

10% Ic

td(on)

Vce

tr

t1

90% Ic

5% Vce

+V

DUT VOLTAGE AND CURRENT

Ipk

Ic

t2

Vce ie dt

Eon =

∫

t1

t2

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, t

d(on)

, t

r

Ic

tx 10% Vcc

Vpk

DIODE REVERSE RECOVERY ENERG Y

Irr

trr

10% Irr

DIODE RECOVERY W AVEFORM S

Erec =

t3

t4

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

rr

Qrr =

∫

t3

id d t

∫

tx

t4

Vd id dt

trr

Vcc

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V

g

GATE SIGNAL DEVICE UNDER TEST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

IRG4BC30FD

t0

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L

1000V

V *

c

50V

6000µF 100V

Figure 19. Clamped Inductive Load Test

Circuit

t1

t2

D.U.T.

RL=

0 - 480V

Figure 20. Pulsed Collector Current

Test Circuit

480V

4 X IC @25°C

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IRG4BC30FD

Notes:

 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)  VCC=80%(V  Pulse width £ 80µs; duty factor £ 0.1%.  Pulse width 5.0µs, single shot.

Case Outline  TO-220AB

), VGE=20V, L=10µH, RG = 23W (figure 19)

CES

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3 X

1.15 (.045)

2.54 (.100) 2X

10.54 (.415)

10.29 (.405)

4

1 2 3

3.78 (.149)

3.54 (.139)

- A -

6.47 (.255)

6.10 (.240)

1.15 (.045) MIN

3.96 (.16 0)

3 X

3.55 (.14 0)

4.06 (.160)

3.55 (.140)

0.93 (.0 37)

3 X

0.69 (.0 27)

0.36 (.0 1 4 ) M B A M

4.69 (.185)

4.20 (.165)

CONFORMS TO JEDEC OUTLINE TO-220AB

Dimensio n s in M illimete rs a n d (Inch e s )

- B -

1.32 (.05 2)

1.22 (.04 8)

3 X

2.92 (.115)

2.64 (.104)

NOTES: 1 DIM ENSIONS & TOLERANCING PE R ANS I Y 1 4 .5 M , 1 9 8 2 . 2 CONTROLLING DIMENSION : INCH. 3 DIM E NSI O NS AR E SH O W N MIL L IM E T E RS (INC H ES). 4 CONFORMS TO JEDEC OUTLINE TO -2 2 0 A B.

LEAD ASSIGNMENTS 1 - G A TE 2 - CO LL ECTO R 3 - EM IT T ER 4 - CO LL ECTO R

0.55 (.022)

0.46 (.018)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

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http://www.irf.com/ Data and specifications subject to change without notice. 12/98

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Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/