Datasheet irg4bc20ud-s Datasheet

PD- 94077

IRG4BC20UD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH

UltraFast CoPack IGBT

ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

FeaturesFeatures

• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode

• Generation 4 IGBT design provides tighter para meter distribution and higher efficiency than Generation 3

• IGBT co-packaged with HEXFRED

TM

ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard D

2

Pak package

G

N-channel

Benefits

• Generation 4 IGBTs offers highest efficiencies available

• Optimized for specific application conditions

• HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing

• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 13 IC @ TC = 100°C Continuous Collector Current 6.5 I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 7.0 I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 60 W PD @ TC = 100°C Maximum Power Dissipation 24 T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current  52 A Clamped Inductive Load Current  52

Diode Maximum Forward Current 52 Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150 Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

C

V

= 600V

CES

V

CE(on) typ.

E

@VGE = 15V, IC = 6.5A

= 1.85V

D2Pak

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Wt Weight 1.44 ––– g (oz)

Junction-to-Case ––– 2.1 Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W Junction-to-Ambient, typical socket mount ––– 40

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1/12/01

IRG4BC20UD-S

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

V

CE(on)

(BR)CES

Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage ––– 0.69 ––– V/°C VGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage ––– 1.85 2 .1 IC = 6.5A VGE = 15V

––– 2.27 ––– V IC = 13A See Fig. 2, 5 ––– 1.87 ––– IC = 6.5A, TJ = 150°C

∆V

V

g I

CES

GE(th)

fe

Gate Threshold Voltage 3.0 ––– 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage ––– -11 ––– mV/°C VCE = VGE, IC = 250µA

Forward Transconductance  1.4 4.3 ––– S VCE = 100V, IC = 6.5A Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V

––– ––– 1700 VGE = 0V, VCE = 600V, TJ = 150°C

V

FM

Diode Forward Voltage Drop ––– 1.4 1.7 V IC = 8.0A See Fig. 13

––– 1.3 1.6 IC = 8.0A, TJ = 150°C

I

GES

Gate-to-Emitter Leakage Current ––– –– – ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Total Gate Charge (turn-on) ––– 27 4 1 IC = 6.5A Qge Gate - Emitter Charge (turn-on) ––– 4.5 6.8 nC VCC = 400V See Fig. 8 Q t

d(on)

t

r

t

d(off)

t

f

E E E t

d(on)

t

r

t

d(off)

t

f

E L C C C t

rr

gc

on

off ts

ts

E

ies oes res

Gate - Collector Charge (turn-on) ––– 10 16 VGE = 15V

Turn-On Delay Time ––– 39 ––– TJ = 25°C

Rise Time ––– 15 ––– ns IC = 6.5A, VCC = 480V

Turn-Off Delay Time ––– 93 140 VGE = 15V, RG = 50Ω

Fall Time ––– 110 170 Energy losses include "tail" and

Turn-On Switching Loss ––– 0.16 ––– diode reverse recovery.

Turn-Off Switching Loss ––– 0.13 ––– mJ See Fig. 9, 10, 11, 18

Total Switching Loss ––– 0.29 0.3

Turn-On Delay Time ––– 38 ––– TJ = 150°C, See Fig. 9, 10, 11, 18

Rise Time ––– 17 ––– ns IC = 6.5A, VCC = 480V

Turn-Off Delay Time ––– 100 – –– VGE = 15V, RG = 50Ω

Fall Time ––– 220 ––– Energy losses include "tail" and

Total Switching Loss ––– 0.49 ––– mJ diode reverse recovery.

Internal Emitter Inductance ––– 7.5 ––– nH Measured 5mm from package

Input Capacitance ––– 530 ––– VGE = 0V

Output Capacitance ––– 39 ––– pF VCC = 30V See Fig. 7

Reverse Transfer Capacitance ––– 7.4 ––– ƒ = 1.0MHz

Diode Reverse Recovery Time ––– 37 55 ns TJ = 25°C See Fig.

––– 55 90 TJ = 125°C 14 IF = 8.0A

I

rr

Diode Peak Reverse Recovery Current ––– 3.5 5.0 A TJ = 25°C See Fig.

––– 4.5 8.0 TJ = 125°C 15 VR = 200V

Q

rr

Diode Reverse Recovery Charge ––– 65 138 nC TJ = 25°C See Fig.

––– 124 360 TJ = 125°C 16 di/dt 200A/µs

di

/dt Diode Peak Rate of Fall of Recovery ––– 240 ––– A/µs TJ = 25°C See Fig.

(rec)M

During t

b

––– 210 ––– TJ = 125°C 17

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12

)

A

0

10

IRG4BC20UD-S

Du ty cy c le: 50 % T = 125°C

J

T = 90 °C

sink

Gate drive as specified Turn-on losses include

8

effects of reverse recovery

Pow er Dissip ation = 13W

6

4

Load Current (A)

2

0

0.1 1 10 100

60% of rated voltag e

f, F requency (kHz

Fig. 1 - Typical Load Current vs. Frequency

100

10

(Load Current = I

T = 25°C

J

T = 150°C

J

of fundamental)

RMS

100

10

T = 150°C

J

T = 25°C

J

1

C

I , Collector-to-Emitter Current (A)

0.1

0.1 1 1

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE

20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

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A

1

C

I , Co llec tor -to -E mitte r C u rre n t (A )

0.1 4 6 8 10 12

V , Ga te-to-E m itter V oltage (V)

GE

V = 1 0V

CC

5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

IRG4BC20UD-S

A

)

14

12

10

8

6

4

2

M a xi m um D C Co ll e c to r C urre n t (A )

0

25 50 75 100 125 150

T , Case Temperature (°C)

C

V = 15V

GE

Fig. 4 - Maximum Collector Current vs.

Case Temperature

10

2.6

V = 15V

GE

80µs PULSE WIDTH

2.2

1.8

1.4

CE

V , Collector-to-E m itter V oltage (V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Tempe rature (°C

J

C

I = 1 3 A

I = 6 .5 A

C

I = 3 . 3A

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

thJC

D = 0.50

1

0.20

0.10

0.05

0.1

0.02

0.01

Therm al Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

SIN GLE PULSE (THERMAL RESPO NSE)

Note s:

1. D uty fa cto r D = t / t

2. Pe ak T = P x Z + T

t , R ectangular Pulse Duration (sec)

1

J

DM

P

12

thJ C

DM

t

1

t

2

C

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

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IRG4BC20UD-S

A

g

A

)

(

)

1000

800

600

400

V = 0V, f = 1M Hz

GE

C = C + C , C S H O RTED

ies ge gc ce

C = C

re s gc

C = C + C

oes c e gc

C

ie s

C

oes

C, Capacitance (p F)

C

200

0

re s

1 10 100

V , Colle c to r-to -E m itte r V o ltag e (V )

CE

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

0.32

V = 480V

CC

V = 1 5V

GE

T = 2 5°C

J

I = 6.5 A

C

20

V = 400V

CE

I = 6 .5 A

C

16

12

8

4

GE

V , Ga te -to -Emitte r V o lta g e ( V )

0

0 5 10 15 20 25 30

Q , To t al Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 50 V = 15V V = 480V

G GE CC

Ω

0.31

I = 13 A

C

I = 6.5 A

C

I = 3.3 A

C

0.30

Total S witching Losses (m J)

0.29 0 102030405060

R , G a te R e sista n ce

G

Ω

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

1

To ta l Sw itc h in g L oss e s (mJ )

A

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Tem perature (°C

J

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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IRG4BC20UD-S

)

A

)

1.2

R = 50 T = 150°C V = 480V V = 15 V

0.9

G J CC GE

Ω

1000

100

V = 2 0 V

GE

T = 12 5 °C

J

0.6

0.3

To ta l Sw itc h ing Lo ss es (m J )

0.0 0 2 4 6 8 10 12 14

I , Co lle cto r-to-E m itte r C urre n t (A

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

F

10

1

C

I , Collec tor-to-E m itter Cu rren t (A)

T = 150°C

J

T = 125°C

J

T = 25 °C

J

10

1

0.1 1 10 100 1000

V , Collector-to-Emitter Voltage (V)

SAFE OPERATING AREA

CE

Fig. 12 - Turn-Off SOA

Instantaneous Forward Current - I (A)

0.1

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

Forward Voltage D ro p - V (V

FM

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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IRG4BC20UD-S

)

(A/µs)

100

V = 200V

R

T = 125°C

J

T = 25°C

J

80

I = 16 A

F

60

rr

t - (ns)

40

I = 4.0A

F

20

I = 8. 0 A

F

100

V = 2 00V

R

T = 125°C

J

T = 25°C

J

I = 16 A

10

IRR M

I - (A )

I = 8.0A

F

I = 4.0 A

F

0

100 1000

di /dt -

f

Fig. 14 - Typical Reverse Recovery vs. dif/dt

500

V = 200V

R

T = 125°C

J

T = 25°C

J

400

300

I = 16 A

F

RR

Q - (nC)

200

I = 8. 0 A

F

100

I = 4.0 A

F

0

100 1000

di /dt - (A/µs

f

1

100 1000

di /dt - (A/µs

f

Fig. 15 - Typical Recovery Current vs. dif/dt

10000

V = 2 00V

R

T = 125°C

J

T = 25°C

J

I = 4.0 A

1000

di(rec)M/d t - (A/µs)

100

100 1000

F

I = 8.0 A

F

I = 16 A

F

di /dt - (A/µs

f

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di

(rec)M

/dt vs. dif/dt

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IRG4BC20UD-S

Same typ e device as D.U.T.

80% of Vce

Fig. 18a - Test Circuit for Measurement of

I

, Eon, E

LM

off(diode)

430µF

, trr, Qrr, Irr, t

d(on)

D.U.T.

, tr, t

d(off)

V

ge

V

C

90%

10%

5%

I

C

t

d(on)

, t

f

10%

t

r

E

on

E = (E +E )

90%

t

d(off)

ts o n off

t

f

E

off

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

, t

d(off)

, t

f

E

off

t=5µs

GATE VOLTAG E D.U.T.

Vcc

10% +Vg

10% Ic

td(on)

Vce

tr

t1

90% Ic

5% Vc e

+Vg

DUT VO LTAGE AND CURRE NT

Ipk

Ic

t2

Vce ie dt

Eon =

∫

t1

t2

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

d(on)

, t

r

on

Ic

tx

10% Vc c

Vpk

DIO DE REVE RSE RECOVERY ENERGY

Irr

trr

10% Irr

DIODE RECO V E RY W AVEFO RMS

Erec =

t3

t4

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

rr

Qrr =

∫

t3

id dt

∫

tx

t4

Vd id dt

trr

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Vcc

Vg

GATE SIGNAL DEVICE UNDE R TE ST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

IRG4BC20UD-S

t0

t1

t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

D.U.T.

50V

6000µF 100V

1000V

L

V *

c

Figure 19. Clamped Inductive Load Test Circuit

0 - 480V

Figure 20. Pulsed Collector Current

Test Circuit

RL=

480V

4 X IC @25°C

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IRG4BC20UD-S

A

D2Pak Package Outline

10.54 (.415)

1.40 (.055) MAX.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

2

Pak Part Marking Information

D

10.29 (.405)

- A 2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.2 5 ( .0 10) M B A M

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNMENTS 1 - G ATE 2 - D RAIN 3 - S OU RCE

10.16 (.400) REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350) REF.

MINIMUM RECOM MENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082) 2X

2.54 (.100) 2X

INTERNATIONAL RE CTIFIER L O G O

A S SEMBLY LO T CO D E

F530S

9246

9 B 1 M

PART NUM B ER

DATE CODE (YYW W ) YY = YEAR WW = WEEK

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D2Pak Tape & Reel Information

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

IRG4BC20UD-S

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

NOTES :

1. COMFORM S TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANG E DISTORT ION @ O UT ER ED GE.

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961)

3

60.00 (2.36 2) MIN.

30.40 (1.197) M A X.

4

Notes:

 Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-

perature (Figure 20)

 VCC=80%(V  Pulse width ≤ 80µs; duty factor ≤ 0.1%.  Pulse width 5.0µs, single shot.

), VGE=20V, L=10µH, RG = 50Ω (Figure 19)

CES

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.1/01

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