Datasheet IRG4BC20KD-SPBF Specification

PD -91598A

IRG4BC20KD-S

INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE

FeaturesFeatures

Features

FeaturesFeatures

• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short

C

Short Circuit Rated

UltraFast IGBT

V

= 600V

CES

Circuit Rated to 10µs @ 125°C, VGE = 15V

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation

TM

• IGBT co-packaged with HEXFRED

ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations

• Industry standard D

2

Pak package

G

E

n-chan nel

V

CE(on) typ.

= 2.27V

@VGE = 15V, IC = 9.0A

Benefits

• Latest generation 4 IGBTs offer highest power
density motor controls possible.

•HEXFRED

TM

diodes optimized for performance
with IGBTs. Minimized recovery characteristics
reduce noise, EMI and switching losses.

•This part replaces the IRGBC20KD2-S and
IRGBC20MD2-S products.

• For hints see design tip 97003.

2

D Pak

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 7.0
I

FM

t

sc

V

GE

PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current Q 32 A
Clamped Inductive Load Current R 32

Diode Maximum Forward Current 32
Short Circuit Withstand Time 10 µs
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight 1.44 ––– g

Junction-to-Case - IGBT ––– 2.1
Junction-to-Case - Diode 2.5
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
Junction-to-Ambient ( PCB Mounted,steady-state)U ––– 40

W

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4/24/2000

IRG4BC20KD-S

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage — 0.49 — V/°CVGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 2.27 2.8 IC = 9.0A VGE = 15V

— 3.01 — VIC = 16A See Fig. 2, 5
— 2.43 — IC = 9.0A, TJ = 150°C

V
∆V
g
I

CES

GE(th)

GE(th)

fe

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -10 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance T 2.9 4.3 — SVCE = 100V, IC = 9.0A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V

——1000 VGE = 0V, VCE = 600V, TJ = 150°C

V

FM

Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13

— 1.3 1.6 IC = 8.0A, TJ = 150°C

I

GES

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q
Q
Q
t

d(on)

t

r

t

d(off)

t

f

E
E
E
t

sc

t

d(on)

t

r

t

d(off)

t

f

E
L
C
C
C
t

rr

I

rr

Q

di

g
ge
gc

on
off
ts

ts

E

ies
oes
res

rr

(rec)M

Total Gate Charge (turn-on) — 34 51 IC = 9.0A
Gate - Emitter Charge (turn-on) — 4.9 7.4 nC VCC = 400V See Fig.8
Gate - Collector Charge (turn-on) — 14 21 VGE = 15V
Turn-On Delay Time — 54 —
Rise Time — 34 — TJ = 25°C
Turn-Off Delay Time — 180 270 IC = 9.0A, VCC = 480V

ns

Fall Time — 72 110 VGE = 15V, RG = 50Ω
Turn-On Switching Loss — 0.34 — Energy losses include "tail"
Turn-Off Switching Loss — 0.30 — mJ and diode reverse recovery
Total Switching Loss — 0.64 0.96 See Fig. 9,10,14
Short Circuit Withstand Time 10 —— µs VCC = 360V, TJ = 125°C

VGE = 15V, RG = 50Ω , V
Turn-On Delay Time — 51 — TJ = 150°C, See Fig. 11,14
Rise Time — 37 — IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 220 — VGE = 15V, RG = 50Ω

ns

Fall Time — 160 — Energy losses include "tail"
Total Switching Loss — 0.85 — mJ and diode reverse recovery
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 450 — VGE = 0V
Output Capacitance — 61 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 14 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.

— 55 90 TJ = 125°C 14 IF = 8.0A

Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.

— 4.5 8.0 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.

— 124 360 TJ = 125°C 16 di/dt = 200Aµs

/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.

During t

b

— 210 — TJ = 125°C 17

CPK

< 500V

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IRG4BC20KD-S

2.5

For both:

2.0

1.5

1.0

Square wave:

60 % o f r a ted
v o l tage

I

LOAD CURRENT (A)

0.5

0.0

0.1 1 10 100

Ideal diodes

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

Duty cycle: 50%
T = 125°C

J

55°C

T = 9 0°C

sink

Gate drive as specified

Pow e r D issip ation = W

1.8

100

o

T = 25 C



J

T = 150 C



J

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE



20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

o

100

10



C

I , Collector-to-Emitter Current (A)

1

5 10 15 20

o

T = 150 C

J

o

T = 25 C



J

V = 50V



5µs PULSE WIDTH

V , Gate-to-Emitter Voltage (V)

GE

CC

Fig. 3 - Typical Transfer Characteristics

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IRG4BC20KD-S

20

15

10

5

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs. Case

Temperature

10

5.0

V = 15V

GE



80 us PULSE WIDTH



I = A18

4.0

3.0

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

C



9.0A

I = A9

C



I = A4.5

C

°

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

thJC

D = 0.50

1

0.20

0.10
P

0.05

0.1

0.02

Thermal Response (Z )

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE



(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

DM

t



1 2

1

t

2

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4BC20KD-S

800

600

400

C, Capacitance (pF)

200

0

1 10 100

V

=

0V,

GE

C

=

iesgegc , ce

C

=

resgc



C

=

oes cegc

C



ies

C



oes

C



res

V , Collector-to-Emitter Voltage (V)

CE

f = 1MHz

C

+ C
C
C

C SHORTED

+ C

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

0.8

V = 480V

CC

V = 15V

GE

T = 25 C

J



I = 9.0A

C

0.7

°

20

V = 400V

CC



I = 9.0A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 10 20 30 40

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = Ohm

50Ω

G

V = 15V

GE



V = 480V

CC



I = A

18

C

0.6

Total Switching Losses (mJ)

0.5
0 10 20 30 40 50

R , Gate Resistance (Ohm)

R

, Gate Resistance ( Ω )

G

G

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

1

Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

9.0A



I = A

9

C



I = A

4.5

C

°

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IRG4BC20KD-S

)

3.0

2.0

1.0

Total Switching Losses (mJ)

0.0

50Ω

R = Ohm

G

T = 150 C

J

V = 480V

CC



V = 15V

GE

0 4 8 12 16 20

°

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

100

V = 20V

GE



T = 125 C

J

10

C

I , Collector-to-Emitter Current (A)

1

1 10 100 1000

o



SAFE OPERATING AREA

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

F

10

T = 150°C

J

T = 125°C

J

T = 25°C

J

1

Instantaneous Forward Current - I (A)

0.1

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

Forward Voltage Drop - V (V

FM

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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IRG4BC20KD-S

)

)

(A/µs)

)

100

V = 200V

R

T = 125 °C

J

T = 25°C

J

80

I = 16 A

F

60

rr

t - (ns)

40

I = 4.0A

F

20

0

100 1000

d i /d t -

f

I = 8.0 A

F

Fig. 14 - Typical Reverse Recovery vs. dif/dt

500

V = 200V

R

T = 125 °C

J

T = 25°C

J

400

100

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 16 A

10

IRR M

I - (A)

I = 8.0A

F

1

100 1000

F

di /dt - (A/µs

f

I = 4.0 A

F

Fig. 15 - Typical Recovery Current vs. dif/dt

10000

V = 200V

R

T = 125°C

J

T = 25°C

J

300

I = 4.0 A

I = 8.0 A

I = 16 A

F

di /dt - (A/µs

F

F

f

(rec)M

/dt vs. dif/dt

I = 16 A

F

1000

RR

Q - (n C )

200

I = 8.0 A

F

100

I = 4.0 A

F

0

100 1000

di /d t - (A/µs

f

d i(rec)M/d t - (A / µ s )

100

100 1000

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di

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IRG4BC20KD-S

Same type
device as
D.U.T.

80%
of Vce

430µF

D.U.T.

Fig. 18a - Test Circuit for Measurement of

I

, Eon, E

LM

Vcc

td(on)

10% +Vg

10% Ic

off(diode)

Vce

t1

, trr, Qrr, Irr, t

90% Ic

5% Vc e

tr

, tr, t

d(on)

GATE VOLTAG E D.U.T.

+Vg

d(off)

DUT VO LTAGE
AND CURRE NT

Ipk

t2

Vce ie dt

Vce Ic dt

Eon =

∫

t1

t2

90% Vge

+Vge

Vce

10% Vce

Ic

td(off)

, t

f

t1

90% Ic

Ic

5% Ic

tf

Eo ff =

∫

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

E

, t

d(off)

t3

, t

f

trr

Qrr =

10% Irr

DIODE RECO V E RY
W AVEFORMS

t4

Erec =

Vd id dt

Vd Ic dt

∫

t3

t4

off

Ic

tx

10% Vc c

Vpk

Ic

DIO DE REVERSE
RECOVERY ENERGY

Irr

t1+5µS

Vce ic dt

Vce Ic dt

t1

trr

id dt

Ic dt

∫

tx

Vcc

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

d(on)

, t

r

on

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

rr

8 www.irf.com

Vg

)

)

)

)

)

)

)

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)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

)

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(

)

)

)

)

)

)

)

GATE SIGNAL
DEVICE UNDER TEST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

IRG4BC20KD-S

t0

t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

D.U.T.

50V

6000µF
100V

1000V

L

V *

c

Figure 19. Clamped Inductive Load Test Circuit

Tape & Reel Information

D2Pak

TR R

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.0 7 3

1.65 (.0 6 5

10.90 (.429

10.70 (.421

4.10 (.161

3.90 (.153

1.60 (.063

1.50 (.059

11.60 (.457

11.40 (.449

16.10 (.634

15.90 (.626

1.60 (.063

1.50 (.059

1.75 (.069

1.25 (.049

0 - 480V

Figure 20. Pulsed Collector Current

Test Circuit

0.368 (.0145

0.342 (.0135

15.42 (.609

15.22 (.601

24.30 (.957

23.90 (.941

4.72 (.136

4.52 (.178

RL=

480V

4 X IC @25°C

13.50 (.532

12.80 (.504

330.00

14.173

MAX.

NOTES :

1. CO MF OR M S TO EIA- 418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ H U B.

4. INCLUDES FLANG E DISTORTION @ OUT ER E DGE.

27.40 (1.079

23.90 (.941
4

26.40 (1.039

24.40 (.961

3

60.00 (2.362
M IN .

30.40 (1.197
M A X .

4

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IRG4BC20KD-S

)

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)

)

Notes:

Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
R V

=80%(V

CC

S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.

U

When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

D2Pak Package Outline

), VGE=20V, L=10µH, RG= 50Ω (figure 19)

CES

10.54 (.4 1 5

1.40 (.055
MA X.

1.78 (.070

1.27 (.050

1.40 (.0 5 5

3X

1.14 (.0 4 5

5.08 (.200

NOTES:
1 D IMEN S IO N S AFTE R S OL D E R D IP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 C O N T RO L L IN G D IM ENSIO N : INC H.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

10.29 (.4 0 5

- A ­2

1 3

15.49 (.610

14.73 (.580

0.93 (.037

3X

0.69 (.027

0.25 (.010) M B A M

4.69 (.185

4.20 (.165

5.28 (.208

4.78 (.188

0.55 (.0 2 2

0.46 (.0 1 8

LEAD ASSIGNMENTS
1 - G A TE
2 - D R A IN
3 - SO U R CE

- B -

1.32 (.0 5 2

1.22 (.0 4 8

2.79 (.1 1 0

2.29 (.0 9 0

1.39 (.055

1.14 (.045

10.16 (.400
RE F .

6.47 (.255

6.18 (.243

2.61 (.103

2.32 (.091

8.89 (.3 5 0
RE F.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.4 5 0

8.89 (.350

17.78 (.700

3.81 (.150

2.08 (.082
2X

2.54 (.1 0 0
2X

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Data and specifications subject to change without notice. 10/00

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Note: For the most current drawings please refer to the IR website at:

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