Datasheet IRG4BC20FDPBF Specification

PD 91601A

IRG4BC20FD

INSULATED GATE BIPOLAR TRANSISTOR WITH

Fast CoPack IGBT

ULTRAFAST SOFT RECOVERY DIODE

Features

• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3

• IGBT co-packaged with HEXFRED

TM

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

G

n-channel

bridge configurations

• Industry standard TO-220AB package

Benefits

• Generation -4 IGBTs offer highest efficiencies
available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs. Minimized recovery characteristics require
less/no snubbing

• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0
I

CM

I

LM

IF @ TC = 100°C Diode Continuous Forward Current 7.0
I

FM

V

GE

PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
T

J

T

STG

Collector-to-Emitter Voltage 600 V

Pulsed Collector Current Q 64 A
Clamped Inductive Load Current R 64

Diode Maximum Forward Current 32
Gate-to-Emitter Voltage ± 20 V

Operating Junction and -55 to +150
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter Min. Typ. Max. Units

R

θJC

R

θJC

R

θCS

R

θJA

Wt Weight ––– 2 (0.07) ––– g (oz)

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Junction-to-Case - IGBT ––– ––– 2.1
Junction-to-Case - Diode ––– ––– 3.5 °C/W
Case-to-Sink, flat, greased surface ––– 0.50 –––
Junction-to-Ambient, typical socket mount ––– ––– 80

C

E

V

= 600V

CES

V

CE(on) typ.

@VGE = 15V, IC = 9.0A

TO-220AB

= 1.66V

W

7/11/2000

IRG4BC20FD

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

∆V

(BR)CES

V

CE(on)

Collector-to-Emitter Breakdown VoltageS 600 —— VVGE = 0V, IC = 250µA

/∆T

Temperature Coeff. of Breakdown Voltage — 0.72 — V/°CVGE = 0V, IC = 1.0mA

J

Collector-to-Emitter Saturation Voltage — 1.66 2.0 IC = 9.0A VGE = 15V

— 2.06 — VIC = 16A See Fig. 2, 5
— 1.76 — IC = 9.0A, TJ = 150°C

V
∆V
g
I

CES

GE(th)

GE(th)

fe

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance T 2.9 5.1 — SVCE = 100V, IC = 9.0A
Zero Gate Voltage Collector Current ——250 µA VGE = 0V, VCE = 600V

——1700 VGE = 0V, VCE = 600V, TJ = 150°C

V

FM

Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13

— 1.3 1.6 IC = 8.0A, TJ = 150°C

I

GES

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

Q

g

Qge Gate - Emitter Charge (turn-on) — 4.2 6.2 nC VCC = 400V See Fig. 8
Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

t

rr

I

rr

Q

rr

di

(rec)M

2 www.irf.com

Total Gate Charge (turn-on) — 27 40 IC = 9.0A

Gate - Collector Charge (turn-on) — 9.9 15 VGE = 15V
Turn-On Delay Time — 43 — TJ = 25°C
Rise Time — 20 — ns IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 240 360 VGE = 15V, RG = 50Ω
Fall Time — 150 220 Energy losses include "tail" and
Turn-On Switching Loss — 0.25 — diode reverse recovery.
Turn-Off Switching Loss — 0.64 — mJ See Fig. 9, 10, 18
Total Switching Loss — 0.89 1.3
Turn-On Delay Time — 41 — TJ = 150°C, See Fig. 11, 18
Rise Time — 22 — ns IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 320 — VGE = 15V, RG = 50Ω
Fall Time — 290 — Energy losses include "tail" and
Total Switching Loss — 1.35 — mJ diode reverse recovery.
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 540 — VGE = 0V
Output Capacitance — 37 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 7.0 —ƒ = 1.0MHz
Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig.

— 55 90 TJ = 125°C 14 IF = 8.0A

Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig.

— 4.5 8.0 TJ = 125°C 15 VR = 200V

Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig.

— 124 360 TJ = 125°C 16 di/dt = 200A/µs

/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig.

During t

b

— 210 — TJ = 125°C 17

IRG4BC20FD

14

For both:

12

10

8

Square wave:

60 % o f rate d

6

4

LOAD CURRENT (A)

2

0

0.1 1 10 100

v olta ge

I

Ideal diodes

f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

Duty cycle: 50%
T = 125°C

J

T = 90° C

sink

Gate drive as specified

Pow er Dissipation = W

13

100

o

T = 25 C



J

o

T = 150 C



J

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE



20µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics

100

o

T = 150 C



J

10

o

T = 25 C



J

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12 13 14

V , Gate-to-Emitter Voltage (V)

GE

V = 50V

CC



5µs PULSE WIDTH

Fig. 3 - Typical Transfer Characteristics

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IRG4BC20FD

16

12

8

4

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs. Case

Temperature

10

3.0

V = 15V

GE



80 us PULSE WIDTH

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J



I = A18

C

9.0 A



I = A9

C



I = A4.5

C

°

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

thJC

0.50

1

0.20

0.10

P

0.05

0.1

0.02

0.01

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE



(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t



2. Peak T = P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

DM

t



1 2

1

t

2

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4 www.irf.com

IRG4BC20FD

1000

800

600

400

C, Capacitance (pF)

200

0

1 10 100

V

=

0V,

GE

C

=

iesgegc , ce

C

=

resgc



C

=

oes cegc

V , Collector-to-Emitter Voltage (V)

CE

f = 1MHz

C

+ C
C
C

C



ies

C



oes

C



res

C SHORTED

+ C

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

0.90

V = 480V

CC

V = 15V

GE

0.88

0.86

0.84

0.82

T = 25 C

J



I = 9.0A

C

°

20

V = 400V

CC



I = 9.0A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 5 10 15 20 25 30

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 50Ohm

G

V = 15V

GE



V = 480V

CC

1

Ω



I = A

C



I = A

C



I = A

C

18

9.0 A

9

4.5

Total Switching Losses (mJ)

0.80

0.78
0 10 20 30 40 50

R , Gate Resistance (Ohm)

G

Ω

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

°

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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IRG4BC20FD

)

3.0

R = 50Ohm
T = 150 C
V = 480V



2.5

V = 15V

2.0

1.5

1.0

Total Switching Losses (mJ)

0.5

0.0
0 4 8 12 16 20

Ω

G

J
CC
GE

°

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

100

V = 20V

GE



T = 125 C

J

10

C

I , Collector-to-Emitter Current (A)

1

1 10 100 1000

o

SAFE OPERATING AREA



V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

F

10

T = 150°C

J

T = 125°C

J

T = 25°C

J

1

Instantaneous Forward Current - I (A)

0.1

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

Forward Voltage D rop - V (V

FM

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

6 www.irf.com

IRG4BC20FD

)

)

(A/µs)

)

100

V = 200V

R

T = 125 °C

J

T = 25° C

J

80

I = 16 A

F

60

rr

t - (ns)

40

I = 4.0A

F

20

0

100 1000

di /dt -

f

I = 8 .0A

F

Fig. 14 - Typical Reverse Recovery vs. dif/dt

500

V = 200V

R

T = 125 °C

J

T = 25° C

J

400

100

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 1 6 A

10

IRRM

I - (A )

I = 8.0A

F

1

100 1000

F

di /dt - (A/µs

f

I = 4.0 A

F

Fig. 15 - Typical Recovery Current vs. dif/dt

10000

V = 200V

R

T = 125 °C

J

T = 25° C

J

300

I = 4.0 A

I = 8.0A

I = 1 6 A

F

di /dt - (A/µs

F

F

f

(rec)M

/dt vs. dif/dt

I = 16 A

F

1000

RR

Q - (nC)

200

I = 8 .0A

F

100

I = 4.0 A

F

0

100 1000

di /dt - (A/µs

f

d i(re c )M /d t - (A /µs )

100

100 1000

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di

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IRG4BC20FD

Same type
device as
D.U.T.

80%
of Vce

430µF

D.U.T.

Fig. 18a - Test Circuit for Measurement of

I

LM

Vcc

, Eon, E

10% +Vg

10% Ic

td(on)

t1

off(diode)

Vce

tr

, trr, Qrr, Irr, t

GATE VOLTAGE D.U.T.

+Vg

90% Ic

5% Vce

d(on)

, tr, t

Eon =

t2

, t

d(off)

DUT VOLTAGE
AND CURRE NT

Ipk

Ic

t2

Vce Ic dt

Vce ie dt

∫

t1

90% Vge

+Vge

Vce

10% Vce

Ic

td(off)

f

t1

90% Ic

Ic

5% Ic

tf

t1+ 5 µS

Vce ic dt

Vce Ic dt

Eoff =

∫

t1

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

, t

d(off)

t3

, t

f

trr

10% Irr

DIODE RECO VERY
W AVEFORMS

Erec =

t4

Qrr =

∫

t3

trr

id dt

Ic dt

∫

tx

t4

Vd id dt

Vd Ic dt

E

Ic

tx

10% Vcc

Vpk

DIODE REVERSE
RECOVERY ENERGY

Irr

off

Vcc

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

d(on)

, t

r

on

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E

, trr, Qrr, I

rec

rr

8 www.irf.com

Vg

GATE SIGNAL
DEVICE UNDER TEST

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

IRG4BC20FD

t0

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L

1000V

V *

c

50V

6000µF
100V

Figure 19. Clamped Inductive Load Test

Circuit

t1

t2

D.U.T.

RL=

0 - 480V

Figure 20. Pulsed Collector Current

Test Circuit

480V

4 X IC @25°C

www.irf.com 9

IRG4BC20FD

)

)

)

)

)

Notes:

Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)

R V

=80%(V

CC

S Pulse width ≤ 80µs; duty factor ≤ 0.1%.

T Pulse width 5.0µs, single shot.

Case Outline  TO-220AB

), VGE=20V, L=10µH, RG = 50Ω (figure 19)

CES

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3 X

1.15 (.045)

2.54 (.100)

2X

10.54 (.415)

10.29 (.405)2.87 (.113)

4

1 2 3

3.78 (.149)

3.54 (.139)

- A -

6.47 (.255)

6.10 (.240)

1.15 (.045)
MIN

3.96 (.160

3 X

3.55 (.140

4.06 (.160)

3.55 (.140)

0.93 (.037

3 X

0.69 (.027

0.36 (.014) M B A M

4.69 (.185)

4.20 (.165)

CONFORMS TO JEDEC OUTLINE TO-220AB

D im e nsion s in M illim eter s an d (Inc he s

- B -

1.32 (.052)

1.22 (.048)

3 X

2.92 (.115)

2.64 (.104)

NOTES:
1 DIMENSIONS & TOLERANCING
PER AN SI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 D IME N SION S A R E S H O W N
MILLIM E TE R S (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO-220AB.

LEAD ASSIGNMENTS
1 - G ATE
2 - C OL LE C TO R
3 - E MIT T ER
4 - C OL LE C TO R

0.55 (.022)

0.46 (.018)

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Data and specifications subject to change without notice. 7/00

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Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/