Datasheet irg4bc20f Datasheet

PD - 91602A

IRG4BC20F

INSULATED GATE BIPOLAR TRANSISTOR

FeaturesFeatures

Features

FeaturesFeatures

• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20

C

Fast Speed IGBT

= 600V

V

CES

kHz in resonant mode).

• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3

• Industry standard TO-220AB package

G

E

V

CE(on) typ.

= 1.66V

@VGE = 15V, IC = 9.0A

n-channel

Benefits

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

TO-220AB

Absolute Maximum Ratings

Parameter Max. Units

V

CES

IC @ TC = 25°C Continuous Collector Current 16
IC @ TC = 100°C Continuous Collector Current 9.0 A
I

CM

I

LM

V

GE

E

ARV

PD @ TC = 25°C Maximum Power Dissipation 60
PD @ TC = 100°C Maximum Power Dissipation 24
T

J

T

STG

Collector-to-Emitter Breakdown Voltage 600 V

Pulsed Collector Current Q 64
Clamped Inductive Load Current R 64
Gate-to-Emitter Voltage ± 20 V
Reverse Voltage Avalanche Energy S 5.0 mJ

Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

W

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Wt Weight 2.0 (0.07) ––– g (oz)

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Junction-to-Case ––– 2.1
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
Junction-to-Ambient, typical socket mount ––– 80

4/17/2000

IRG4BC20F

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)CES

V

(BR)ECS

∆V

(BR)CES

V

CE(ON)

V

GE(th)

∆V

GE(th)

g

fe

I

CES

I

GES

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Q

g

Q

ge

Q

gc

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

ts

L

E

C

ies

C

oes

C

res

Notes:

Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A

/∆T

Temperature Coeff. of Breakdown Voltage — 0.72 — V/°CVGE = 0V, IC = 1.0mA

J

— 1.66 2.0 IC = 9.0A VGE = 15V

Collector-to-Emitter Saturation Voltage — 2.06 — IC = 16A See Fig.2, 5

— 1.76 — IC = 9.0A , TJ = 150°C

V

Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA

/∆TJTemperature Coeff. of Threshold Voltage — -11 — mV/°CVCE = VGE, IC = 250µA

Forward Transconductance U 2.9 5.1 — SVCE = 100V, IC = 9.0A

Zero Gate Voltage Collector Current

——250 VGE = 0V, VCE = 600V
——2.0 VGE = 0V, VCE = 10V, TJ = 25°C

µA

——1000 VGE = 0V, VCE = 600V, TJ = 150°C

Gate-to-Emitter Leakage Current ——±100 nA VGE = ±20V

Parameter Min. Typ. Max. Units Conditions

Total Gate Charge (turn-on) — 27 40 IC = 9.0A
Gate - Emitter Charge (turn-on) — 4.2 6.2 nC VCC = 400V See Fig. 8
Gate - Collector Charge (turn-on) — 9.9 15 VGE = 15V
Turn-On Delay Time — 24 —
Rise Time — 17 — TJ = 25°C
Turn-Off Delay Time — 190 280 IC = 9.0A, VCC = 480V

ns

Fall Time — 210 320 VGE = 15V, RG = 50Ω
Turn-On Switching Loss — 0.07 — Energy losses include "tail"
Turn-Off Switching Loss — 0.60 — mJ See Fig. 9, 10, 14
Total Switching Loss — 0.67 1.1
Turn-On Delay Time — 24 — TJ = 150°C,
Rise Time — 17 — IC = 9.0A, VCC = 480V
Turn-Off Delay Time — 300 — VGE = 15V, RG = 50Ω

ns

Fall Time — 340 — Energy losses include "tail"
Total Switching Loss — 1.30 — mJ See Fig. 11, 14
Internal Emitter Inductance — 7.5 — nH Measured 5mm from package
Input Capacitance — 540 — VGE = 0V
Output Capacitance — 37 — pF VCC = 30V See Fig. 7
Reverse Transfer Capacitance — 7.0 —ƒ = 1.0MHz

Q Repetitive rating; V

= 20V, pulse width limited by

GE

max. junction temperature. ( See fig. 13b )

R V

CC

(See fig. 13a)

= 80%(V

CES

), V

= 20V, L = 10µH, RG = 50Ω,

GE

T Pulse width ≤ 80µs; duty factor ≤ 0.1%.

U Pulse width 5.0µs, single shot.

S Repetitive rating; pulse width limited by maximum

junction temperature.

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IRG4BC20F

)

25

20

15

10

Square wave:

60% of rated
volta ge

I

For both:

Duty cycle: 50%
T = 125°C

J

T = 90° C

sink

Gate drive as specified

Power D issipation = 13W

Triangular wave:

I

Clamp voltage:
80% of rated

Load Current ( A )

5

0

0.1 1 10 100

Ideal diodes

f, Frequency (kHz

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of fundamental)

RMS

A

100

o

T = 25 C



J

o

T = 150 C



J

10

C

I , Collector-to-Emitter Current (A)

1

1 10

V , Collector-to-Emitter Voltage (V)

CE

V = 15V

GE



20µs PULSE WIDTH

100

o

T = 150 C



J

10

o

T = 25 C



J

C

I , Collector-to-Emitter Current (A)

1

5 6 7 8 9 10 11 12 13 14

V , Gate-to-Emitter Voltage (V)

GE

V = 50V

CC



5µs PULSE WIDTH

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4BC20F

16

12

8

4

Maximum DC Collector Current(A)

0

25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig. 4 - Maximum Collector Current vs. Case

Temperature

10

3.0

V = 15V

GE



80 us PULSE WIDTH

2.0

CE

V , Collector-to-Emitter Voltage(V)

1.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J



I = A18

C

9.0 A



I = A9

C



I = A4.5

C

°

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

thJC

0.50

1

0.20

0.10

P

0.05

0.1

0.02

0.01

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE



(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

DM

t



1 2

1

t

2

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRG4BC20F

1000

800

600

400

C, Capacitance (pF)

200

0

1 10 100

V

=

0V,

GE

C

=

iesgegc , ce

C

=

resgc



C

=

oes cegc

V , Collector-to-Emitter Voltage (V)

CE

f = 1MHz

C

+ C
C
C

C



ies

C



oes

C



res

C SHORTED

+ C

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

0.72

V = 480V

CC

V = 15V

GE

°

0.71

T = 25 C

J



I = 9.0A

C

20

V = 400V

CC



I = 9.0A

C

16

12

8

4

GE

V , Gate-to-Emitter Voltage (V)

0

0 5 10 15 20 25 30

Q , Total Gate Charge (nC)

G

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

R = 50Ohm

G

V = 15V

GE



V = 480V

CC

Ω



I = A

18

C

0.70

0.68

0.67

Total Switching Losses (mJ)

0.66
0 10 20 30 40 50

R , Gate Resistance (Ohm)

G

Ω

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

1

Total Switching Losses (mJ)

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C )

J

Fig. 10 - Typical Switching Losses vs.

Junction Temperature



9.0 A

I = A

9

C



I = A

4.5

C

°

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IRG4BC20F

3.0

R = 50Ohm
T = 150 C
V = 480V



2.5

V = 15V

2.0

1.5

1.0

Total Switching Losses (mJ)

0.5

0.0
0 4 8 12 16 20

Ω

G

J
CC
GE

°

I , Collector-to-emitter Current (A)

C

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

V = 20V

GE



T = 125 C

J

10

C

I , Collector-to-Emitter Current (A)

SAFE OPERATING AREA



1

1 10 100 1000

o

V , Collector-to-Emitter Voltage (V)

CE

Fig. 12 - Turn-Off SOA

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IRG4BC20F

y

p

)

p

ply, p

50V

Q

* Driver same t
* Note: Due to the 50V power su
will in crease to ob ta in ra ted Id.

e as D.U.T.; Vc = 80% o f Vce(max

Fig. 13a - Clamped Inductive

Load Test Circuit

50V

1000V

Q

1000V

L

V *

C

ulse width and inductor

D.U.T.

L

Driver*

R

480V

RL =

4

0 - 480V

480µF
960V

X IC@25°C

R

Fig. 13b - Pulsed Collector

Current Test Circuit

I

C

V

C

S

D.U.T.

Fig. 14a - Switching Loss

Test Circuit

* Driver same type
as D.U.T., VC = 480V

Q

R

90%

S

V

C

90%

10%

5%

I

C

t

d(on)

10%

t

r

E

on

t

d(off)

E = (E +E )

ts on off

Fig. 14b - Switching Loss

Waveforms

t

f

E

off

t=5µ s

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IRG4BC20F

)

)

)

)

)

Case Outline and Dimensions  TO-220AB

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3 X

1.15 (.045)

2.54 (.100)

2X

10.54 (.415)

10.29 (.405)2.87 (.113)

4

1 2 3

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

6.47 (.255)

6.10 (.240)

1.15 (.045)
MIN

3.96 (.160

3 X

3.55 (.140

4.06 (.160)

3.55 (.140)

0.93 (.037

3 X

0.69 (.027

0.36 (.014) M B A M

CONFORMS TO JEDEC OUTLINE TO-220AB

Dimensions in Millimeters and (Inches

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

0.55 (.022)

3 X

0.46 (.018)

NOTES:
1 DIMENSIONS & TOLERANCING
PER AN SI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 D IM E NS IO N S ARE S H O W N
MILLIM E T ER S (INCHES).
4 CONFORMS TO JEDEC OUTLINE
TO -220A B .

LEAD ASSIGNMENTS
1 - G A TE
2 - C O LLE C TO R
3 - E M ITT E R
4 - C O LLE C TO R

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Data and specifications subject to change without notice. 4/00

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