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PD - 93959A
IRFZ48V
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
G
D
V
R
DS(on)
= 60V
DSS
= 12mΩ
ID = 72A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
TO-220AB
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 72
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 51 A
I
DM
PD @TC = 25°C Power Dissipation 150 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.3 V/ns
T
J
T
STG
Pulsed Drain Current 290
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 166 mJ
Avalanche Current 72 A
Repetitive Avalanche Energy 15 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
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Junction-to-Case ––– 1.0
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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IRFZ48V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 – –– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 12.0 mΩ VGS = 10V, ID = 43A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 35 ––– ––– S VDS = 25V, ID = 43A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 110 ID = 72A
Gate-to-Source Charge ––– ––– 29 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 36 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 7.6 ––– VDD = 30V
Rise Time ––– 200 ––– ID = 72A
Turn-Off Delay Time ––– 157 ––– RG = 9.1Ω
ns
Fall Time ––– 166 ––– RD = 0.34Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1985 ––– VGS = 0V
Output Capacitance ––– 496 ––– VDS = 25V
Reverse Transfer Capacitance ––– 91 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
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Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
72
290
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 72A, VGS = 0V
Reverse Recovery Time ––– 70 100 ns TJ = 25°C, IF = 72A
Reverse Recovery Charge ––– 155 233 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 72A, di/dt ≤ 151A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
= 25°C, L = 64µH
J
= 72A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
S
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IRFZ48V
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
72A
I =
D
°
T = 175 C
100
10
D
I , Drain-to-Source Current (A)
1
4 6 8 10 12 14
V , Gate-to-Source Voltage (V)
GS
J
V = 25V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
V =
Fig 4. Normalized On-Resistance
GS
10V
°
Vs. Temperature
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IRFZ48V
4000
3000
2000
C, Capacitance(pF)
1000
0
1 10 100
V
= 0V, f = 1 MHZ
GS
Cis = C
C
C
VDS, Drain-to-Source Voltage (V)
rss
oss
gs
= C
= C
+ Cgd, C
gd
+ C
ds
Ciss
Coss
Crss
ds
gd
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
T = 175 C
°
J
SHORTED
20
I =
72A
D
15
10
5
GS
V , Gate-to-Source Voltage (V)
0
0 20 40 60 80 100 120
Q , Total Gate Charge (nC)
G
V = 48V
DS
V = 30V
DS
V = 12V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 25 C
10
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.6 1.0 1.4 1.8
V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 7. Typical Source-Drain Diode
Forward Voltage
Forward Voltage
J
V = 0 V
GS
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 175 C
Single Pulse
1
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
100us
1ms
10ms
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80
60
40
D
I , Drain Current (A)
20
0
25 50 75 100 125 150 175
T , Case Temperature( C)
C
°
IRFZ48V
R
D.U.T.
D.U.T.
D
t
t
d(off)tf
d(off)tf
+
V
-
V
V
DS
DS
V
V
GS
GS
R
R
G
G
10V
10V
Pulse Width ≤ 1 µs
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
Fig 10a. Switching Time Test Circuit
V
V
DS
DS
90%
90%
10%
10%
V
V
GS
GS
t
t
d(on)tr
d(on)tr
DD
Fig 9. Maximum Drain Current Vs.
Fig 9. Maximum Drain Current Vs.
Case Temperature
Case Temperature
10
Fig 10b. Switching Time Waveforms
Fig 10b. Switching Time Waveforms
thJC
1
D = 0.50
0.20
P
0.10
0.1
0.05
Thermal Response(Z )
0.01
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJC C
DM
t
1 2
1
t
2
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IRFZ48V
A
15V
DRIVER
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
400
TOP
300
+
V
DD
-
200
100
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature( C)
J
BOTTOM
I
D
29A
51A
72A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
12V
.2µF
.3µF
10 V
Q
GS
V
G
Fig 13a. Basic Gate Charge Waveform
Q
GD
Charge
V
GS
3mA
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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D.U.T.
I
G
I
D
+
V
DS
-
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IRFZ48V
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P.W.
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFETS
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IRFZ48V
A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.29 (.405)
1 2 3
6.47 (.255)
6.10 (.240)
4
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSIGNMENTS
1 - G A TE
2 - D R A IN
3 - SOURCE
4 - D R A IN
1.40 (.055)
3X
1.15 (.045)
2.54 (.100)
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CON TR O LL ING D IME N S IO N : INC H 4 H E ATS INK & L E A D M E A S U R E M E N T S DO N OT INCLUDE BURRS.
2X
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
LOT CODE 9B1 M
This product has been designed and qualified for the Automotive [Q101] market.
0.93 (.037)
3X
0.69 (.027)
0.36 (.014) M B A M
INT ER NA TIONA L
R E C T IF IE R
LOG O
AS SEMBLY
LOT CODE
Data and specifications subject to change without notice.
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
PART NUMBER
IRF1010
9246
9B 1M
DATE CODE
(YYW W)
YY = YEAR
WW = WEEK
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
8 www.irf.com
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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