Datasheet IRFZ 48NS Datasheet

PD - 95125

IRFZ48NSPbF

l Advanced Process Technology l Surface Mount (IRFZ48NS)

IRFZ48NLPbF

HEXFET® Power MOSFET

l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching

D

V

DSS

= 55V

l Fully Avalanche Rated l Lead-Free

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ48NL) is available for lowprofile applications.

2

Pak is

G

S

R

DS(on)

2

D Pak

= 0.014Ω

ID = 64A

TO-262

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A I

DM

PD @TA = 25°C Power Dissipation 3.8 W

PD @TC = 25°C Power Dissipation 130 W

V

GS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns T

J

T

STG

Pulsed Drain Current  210

Linear Derating Factor 0.83 W/°C Gate-to-Source Voltage ± 20 V Avalanche Current 32 A Repetitive Avalanche Energy 13 mJ

Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Thermal Resistance

Parameter Typ. Max. Units

R

qJC

R

qJA

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Junction-to-Case ––– 1.15 Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40

°C/W

3/18/04

IRFZ48NS/LPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

E

AS

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 14 mΩ VGS = 10V, ID = 32A  Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 24 ––– ––– S VDS = 25V, ID = 32A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100

––– ––– 25 ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C

µA

nA

= 55V, VGS = 0V

V

DS

VGS = -20V Total Gate Charge ––– ––– 81 ID = 32A Gate-to-Source Charge ––– ––– 19 nC VDS = 44V Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13 Turn-On Delay Time ––– 12 ––– VDD = 28V Rise Time ––– 78 ––– ID = 32A Turn-Off Delay Time ––– 34 ––– RG = 0.85Ω

ns

Fall Time ––– 50 ––– VGS = 10V, See Fig. 10 

Internal Source Inductance ––– 7.5 –––

nH Between lead,

and center of die contact Input Capacitance ––– 1970 ––– VGS = 0V Output Capacitance ––– 470 ––– VDS = 25V Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz, See Fig. 5 Single Pulse Avalanche Energy ––– 700 190 mJ I

= 32A, L = 0.37mH

AS

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode)

––– –––

64

210

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V  Reverse Recovery Time ––– 68 100 ns TJ = 25°C, IF = 32A Reverse Recovery Charge ––– 220 330 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

SD

= 25°C, L = 0.37mH

J

= 32A. (See Figure 12)

AS

≤ 32A, di/dt ≤ 220A/µs, V

DD

≤ V

(BR)DSS

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  This is the destructive value not limited to the thermal limit.  This is the thermal limited value.

,

TJ ≤ 175°C

** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994.

2 www.irf.com

D

S

IRFZ48NS/LPbF

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

1000

VGS

TOP

15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

20µs PULSE WIDTH T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

1000

100

TOP

BOTTOM

VGS 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

10

D

I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 175 C

1

0.1 1 10 100

V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

I =

D

64A

°

T = 25 C

J

100

10

D

I , Drain-to-Source Current (A)

V = 25V

DS

1

4 6 8 10 12

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

°

T = 175 C

J

Fig 3. Typical Transfer Characteristics

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRFZ48NS/LPbF

3500

3000

2500

2000

1500

C, Capacitance (pF)

1000

500

0

1 10 100

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd

C

=

oss ds gd

V , Drain-to-Sour ce Voltage (V)

DS

f = 1MHz

C

+ C

C

C SHORTED

iss

oss

rss

C C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

100

10

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.7 1.2 1.7 2.2

°

T = 175 C

J

°

T = 25 C

J

V ,Source-to-Drain Voltage (V)

SD

V = 0 V

GS

20

I =

32A

D

V = 44V

DS

V = 27V

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

DS

V = 11V

DS

FOR TEST CIRCUIT

0

0 20 40 60 80

Q , Total Gate Charge (nC)

G

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

) A

( t

100

n e

r

r u

C e

c

r u

10

o S

o

t

n

i a

r D

1

,

D

I

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100

OPERATION IN THIS AREA LIMITED BY RDS(on)

V

, Drain-toSource Voltage (V)

DS

13

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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IRFZ48NS/LPbF

70

60

50

40

30

D

20

I , Drain Current (A)

10

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

thJC

1

D = 0.50

0.20

1 2

P

DM

t

1

t

2

0.10

0.1

0.05

0.02

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

J DM thJC C

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFZ48NS/LPbF

A

15V

DRIVER

R

G

20V

V

DS

t

L

D.U.T

I

AS

Ω

0.01

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

360

TOP

300

240

+

V

DD

-

180

120

60

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

BOTTOM

I

D 13A 23A 32A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

V

GS

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

-

D

6 www.irf.com

V

DS

IRFZ48NS/LPbF

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance Current Transformer

-

+



-



-

+



R

G

V

GS

• dv/dt controlled by R

• ISD controlled by Duty Factor "D"

G

• D.U.T. - Device Under Test

+

V

DD

-

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P. W .

Period

VGS=10V

[ ] ***

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

Fig 14. For N-channel HEXFET

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

®

power MOSFETs

V

DD

[ ]

I

[ ]

SD

www.irf.com 7

IRFZ48NS/LPbF

2

D

Pak Package Outline

Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information (Lead-Free)

T H IS IS AN IR F 530 S WIT H

LOT CODE 8024 AS S EMB LE D ON WW 02, 2000 IN THE ASSE MBLY LINE "L"

N ote: "P " in ass embly line po s itio n in dicates "L ead-F ree"

INT ER NAT IONAL

R EC TIF IER

LOGO

ASSEMBLY LOT CODE

F530S

PART NUMBER

DATE CODE YE AR 0 = 2000 WEE K 02 LINE L

OR

IN T E R NAT ION AL

RECTIFIER

LOGO

AS S EM B L Y LOT CODE

F 530S

8 www.irf.com

PART NUMB ER

DATE CODE P = DESIGNAT ES LEAD-FREE

PRODUCT (OPTIONAL)

YEAR 0 = 2000 WEEK 02

A = ASSEMBLY SITE CODE

TO-262 Package Outline

IRFZ48NS/LPbF

IGBT

1- GATE

2- COLLECTOR

3- EMITTER

TO-262 Part Marking Information

TH IS IS AN IRL3103L

EXAMPLE:

LOT CODE 1789

ASS EMBLE D ON WW 19, 1997

IN TH E ASS EMBLY L INE "C"

Note: "P" in as sembly line

pos iti on indicates "L ead-F ree"

INTERNAT IONAL

RECT IFIER

LOGO

ASSEMBLY LOT CODE

PART NUMBER

DATE CODE YEAR 7 = 1997 WE EK 19 LINE C

OR

INTE RNATIONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

www.irf.com 9

PART NUMBE R

DAT E CODE P = DESIGNATE S LEAD-FREE

PRODUCT (OPT IONAL)

YEAR 7 = 1997 WE EK 19

A = AS S E MB L Y S IT E COD E

IRFZ48NS/LPbF

D2Pak Tape & Reel Infomation

Dimensions are shown in millimeters (inches)

TRR

FEED DI RECTION

TRL

FEED DI RECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 ( .532)

12.80 ( .504)

330.00 (14.173) MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

27.40 ( 1.079)

23.90 ( .941)

4

26.40 ( 1.039)

24.40 ( .961)

3

60.00 (2.362) MIN.

30.40 ( 1.197) MAX.

4

Data and specifications subject to change without notice.

This product has been designed and qualified for the industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.03/04

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Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/