Datasheet irfz46s Datasheet

PD - 9.922A

IRFZ46S/L

HEXFET® Power MOSFET

l Advanced Process Technology
l Surface Mount (IRFZ46S)
l Low-profile through-hole (IRFZ46L)
l 175°C Operating Temperature
l Fast Switching

Description

Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.

2

The D

Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on­resistance in any existing surface mount package. The

2

D

Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ46L) is available for low­profile applications.

G

2

D Pa k

D

S

V

R

DS(on)

TO-262

= 50V

DSS

= 0.024Ω

= 72A

I

D

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50 
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 38 A
I

DM

PD @TA = 25°C Power Dissipation 3.7 W
PD @TC = 25°C Power Dissipation 150 W

V

GS

E

AS

dv/dt Peak Diode Recovery dv/dt  4.5 V/ns
T

J

T

STG

Pulsed Drain Current  220

Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 100 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C
°C

Thermal Resistance

R

θJC

R

θJA

Junction-to-Case ––– 1.0
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40

Parameter Typ. Max. Units

°C/W

8/25/97

IRFZ46S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 50 –– – ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID =1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.024 Ω VGS =10V, ID = 32A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 27 ––– –– – S VDS = 25V, ID = 32A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– –– – -100

VDS = 50V, VGS = 0V

µA

= 20V

GS

nA

VGS = -20V
Total Gate Charge ––– –– – 66 ID = 54A
Gate-to-Source Charge ––– ––– 21 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 25 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 12 ––– VDD = 28V
Rise Time ––– 120 ––– ID = 54A
Turn-Off Delay Time ––– 42 ––– RG = 9.1Ω

ns

Fall Time ––– 96 ––– RD = 0.49Ω, See Fig. 10 
Internal Source Inductance

––– –––

7.5

Between lead,

nH

and center of die contact
Input Capacitance ––– 1800 ––– VGS = 0V
Output Capacitance ––– 960 – –– pF VDS = 25V
Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

DD

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

50

220

showing the

A

p-n junction diode.

Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 54A, VGS = 0V 
Reverse Recovery Time – – – 66 99 ns TJ = 25°C, IF = 54A
Reverse Recovery Charge ––– 170 310 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Uses IRFZ46 data and test conditions

= 25V, starting TJ = 25°C, L = 34µH

= 54A. (See Figure 12)

AS

≤ 54A, di/dt ≤ 250A/µs, V

DD

≤ V

(BR)DSS

 Calculated continuous current based on maximum allowable

,

junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4



D

G

S

IRFZ46S/L

IRFZ46S/L

IRFZ46S/L

IRFZ46S/L

IRFZ46S/L

+

-

Peak Diode Recovery dv/dt Test Circuit

+





D.U.T

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

controlled by Duty Factor "D"

• I

SD

• D.U.T. - Device Under Test

Period

-

D =



G

P.W.

Period

+

V

DD

VGS=10V

*

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. ISDWaveform

Body Diode Forward

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

* V

= 5V for Logic Level Devices

GS

Fig 14. For N-Channel HEXFETS

Current

di/dt

Diode Recovery

dv/dt

V

DD

I

SD

IRFZ46S/L

D2Pak Package Outline

10.54 (.415)

1.40 (.055)
MAX.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCI NG PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

10.29 (.405)

- A ­2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.25 (.010) M B A M

Part Marking Information

D2Pak

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASS IGNM ENT S
1 - GATE
2 - DRAIN
3 - SOU RC E

10.16 (.400)
REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350)
REF.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082)
2X

2.54 (.100)
2X

INTERNATIONAL
REC TIFIER
LO GO

ASSEMBLY
LOT CODE

F530S

9246

9B 1M

PART NUMBER

A

DATE CODE
(YYW W )
YY = YEAR
WW = WEEK

Package Outline

TO-262 Outline

IRFZ46S/L

Part Marking Information

TO-262

IRFZ46S/L

Tape & Reel Information

D2Pak

TRR

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

1.85 (.073)

1.65 (.065)

TRL

10.90 (.429)

10.70 (.421)

FEED DIRECTION

13.5 0 (. 532 )

12.8 0 (. 504 )

330.0 0
(14.17 3)
M A X .

NOT ES :

1. CO MF OR M S TO EIA -418 .

2. CONTRO LLING DIMEN SION: MILLIMETER.

3. DIMENS IO N M EAS URE D @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

11.6 0 (.457 )

11.4 0 (.449 )

1.75 (.0 69 )

1.25 (.0 49 )

16.10 (.634)

15.90 (.626)

15.4 2 (.609 )

15.2 2 (.601 )

27.4 0 (1 .079 )

23.9 0 (.9 41)
4

26.40 (1. 03 9)

24.40 (.961)

3

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.0 0 (2 .36 2)
MIN .

30.4 0 (1 .19 7)
MAX .

4

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97