Datasheet irfz46ns Datasheet

PD - 9.1305B

IRFZ46NS

IRFZ46NL

HEXFET® Power MOSFETl Advanced Process Technology

l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

G

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

2

The D

Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ46NL) is available for lowprofile applications.

2

Pak is suitable

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A I

DM

PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 107 W

V

GS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns T

J

T

STG

Pulsed Drain Current  180

Linear Derating Factor 0.71 W/°C Gate-to-Source Voltage ± 20 V Avalanche Current 28 A Repetitive Avalanche Energy 11 mJ

Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

D

R

DS(on)

V

= 55V

DSS

= 0.0165Ω

ID = 53A

S

2

D Pak

TO-262

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

www.irf.com 1

Junction-to-Case ––– 1.4 Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40

°C/W

03/12/01

IRFZ46NS/IRFZ46NL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

E

AS

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Drain-to-Source Breakdown Voltage 55 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID =1mA

J

Static Drain-to-Source On-Resistance ––– ––– .0165 Ω VGS =10V, ID = 28A  Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 19 ––– ––– SVDS = 25V, ID = 28A

Drain-to-Source Leakage Current

––– ––– 25 ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 V Gate-to-Source Reverse Leakage ––– ––– -100

µA

nA

V

= 55V, VGS = 0V

DS

= 20V

GS

VGS = -20V Total Gate Charge ––– ––– 72 ID = 28A Gate-to-Source Charge ––– ––– 11 nC VDS = 44V Gate-to-Drain ("Miller") Charge ––– ––– 26 VGS = 10V, See Fig. 6 and 13  Turn-On Delay Time ––– 14 ––– VDD = 28V Rise Time ––– 76 ––– ID = 28A Turn-Off Delay Time ––– 52 ––– RG = 12Ω

ns

Fall Time ––– 57 ––– RD = 0.98Ω, See Fig. 10 Internal Source Inductance

––– –––

7.5

Between lead,

nH

and center of die contact Input Capacitance ––– 1696 ––– VGS = 0V Output Capacitance ––– 407 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz, See Fig. 5 Single Pulse Avalanche Energy  ––– 583152 I

= 28A, L = 389mH

AS

Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode) 

––– –––

53

180

showing the

A

p-n junction diode. Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V  Reverse Recovery Time ––– 67 101 ns TJ = 25°C, IF = 28A Reverse Recovery Charge ––– 208 312 nC di/dt = 100A/µs Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)



D

G

S

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

SD

= 25°C, L = 389µH

J

= 28A. (See Figure 12)

AS

≤ 28A, di/dt ≤ 220A/µs, V

DD

≤ V

(BR)DSS

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  Uses IRFZ46N data and test conditions.

 This is a typical value at device destruction and represents operation outside rated limits.  This is a calculated value limited to TJ = 175°C

,

TJ ≤ 175°C

** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.

2 www.irf.com

IRFZ46NS/IRFZ46NL

)

A

)

A

)

A

1000

V G S TO P 1 5V 10 V

8. 0V

7. 0V

6. 0V

5. 5V

5. 0V BO T T O M 4.5V

100

10

4.5V

D

I , Drain-to-Source C urrent (A)

20µs PUL SE WIDTH

TJ = 25°C

T = 25°C

1

0.1 1 10 100

V , Dra in-t o-Sou r ce Voltage (V

DS

C

Fig 1. Typical Output Characteristics

1000

VGS TOP 15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V BOTTOM 4.5V

100

10

D

I , Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

TJ = 175°C

T = 175°C

1

0.1 1 10 100

V , Dra in-t o-Sou r ce Voltage (V

DS

C

Fig 2. Typical Output Characteristics

2.5

I = 46 A

D

2.0

T = 25°C

100

10

D

I , D rain-to-Source C urrent (A)

1

45678910

V , Gate -to -S ource Voltage (V

GS

Fig 3. Typical Transfer Characteristics

J

T = 175°C

J

V = 2 5 V

DS

20µs PULSE WIDTH

1.5

1.0

(Normaliz ed)

0.5

DS (on)

R , D ra in-to -S o u rc e O n R e s ista n c e

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature (°C)

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V = 10 V

GS

www.irf.com 3

IRFZ46NS/IRFZ46NL

)

A

)

A

g

)

A

g

2800

2400

2000

1600

1200

C, C apa citance (p F)

800

400

0

1 10 100

V = 0V, f = 1M Hz

GS

C = C + C , C S H O R T E D

iss

C = C C = C + C

C

iss

C

oss

C

rss

V , Drai n-to -So urce Voltage (V

DS

s gd d s

d

rss oss ds

d

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I = 2 8A

V , Gate -to- S o u rc e V o lta ge (V)

16

12

8

4

GS

D

V = 44 V

DS

V = 28 V

DS

FOR TEST CIRCUIT

0

0 102030405060

Q , T ota l G a te C h a rge (nC

G

SE E F IG U RE 1 3

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OP ER A T IO N IN T HIS ARE A L IM IT E D BY R

DS(on)

100

T = 175°C

J

T = 25°C

J

10

SD

I , Re ve r se D r ain C u rre n t (A )

1

0.4 0.8 1.2 1.6 2.0 2.4

V , Source-to-Drain V oltage (V)

SD

V = 0V

Fig 7. Typical Source-Drain Diode

GS

100

10

D

I , D rain C u rr ent ( A )

T = 25°C

C

T = 175°C

J

Sin

le Pulse

1

1 10 100

V , Dra in-t o-Sou r ce Voltage (V

DS

Fig 8. Maximum Safe Operating Area

10µs

100µs

1ms

10ms

Forward Voltage

4 www.irf.com

60

50

40

30

20

D

I , Drain Current (A)

10

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

IRFZ46NS/IRFZ46NL

R

D.U.T.

t

d(off)tf

D

+

-

V

DD

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

Fig 9. Maximum Drain Current Vs.

Fig 10b. Switching Time Waveforms

Case Temperature

10

thJC

1

D = 0.50

0.20

0.10

0.05

0.1

0.02

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

P

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRFZ46NS/IRFZ46NL

A

)

D.U.T.

I

AS

L

0.01Ω

+

V

DD

-

R

10 V

V

DS

G

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

V

DD

V

DS

I

AS

Fig 12b. Unclamped Inductive Waveforms

500

400

300

200

100

AS

V = 25 V

E , S ingle Pu lse A valanc he E n ergy (m J)

DD

0

25 50 75 100 125 150 175

Starting T , Junction Temperature (°C

J

I TO P 11A 20A BOTT O M 28 A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

D

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

V

DS

-

D

6 www.irf.com

IRFZ46NS/IRFZ46NL

Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =



P.W.

Period

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFETS

www.irf.com 7

IRFZ46NS/IRFZ46NL

A

D2Pak Package Outline

10.54 (.415)

1.40 (.055) MA X.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

10.29 (.405)

- A 2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.2 5 ( .0 10) M B A M

Part Marking Information

D2Pak

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNMENTS 1 - G ATE 2 - D RAIN 3 - S OU R CE

10.16 (.400) REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350) REF.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082) 2X

2.54 (.100) 2X

INTERNATIONAL RE CTIFIER LO G O

A S SEMBLY LO T CO D E

F530S

9246

9 B 1 M

PART NUMB ER

DATE CODE (Y Y W W ) YY = YEAR WW = WEEK

8 www.irf.com

Package Outline

TO-262 Outline

IRFZ46NS/IRFZ46NL

Part Marking Information

TO-262

www.irf.com 9

IRFZ46NS/IRFZ46NL

)

(

)

Tape & Reel Information

D2Pak

TRR

1.60 (.063

1.50 (.059

4.10 (.1 6 1

3.90 (.1 5 3

1.60 (.06 3

1.50 (.05 9

0.368 (.0145

0.342 (.0135

FEED D IRECTION

1.85 (.0 7 3

1.65 (.0 6 5

TRL

10.90 (.42 9

10.70 (.42 1

FEED DIRECTION

13.50 (.532

12.80 (.504

330.00

14.173

MAX.

NOTES :

1. COM FO R M S TO E IA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HU B.

4. INC LUDES FLANGE DISTORTION @ OUTER EDGE.

11.60 (.457

11.40 (.449

16.10 (.634

15.90 (.626

1.75 (.069

1.25 (.049

15.42 (.609

15.22 (.601

27.40 (1.079

23.90 (.9 41

4

26.40 (1.039

24.40 (.961

3

24.30 (.957

23.90 (.941

4.72 (.136

4.52 (.178

60.00 (2.362 MIN.

30.40 (1.197 MAX .

4

Data and specifications subject to change without notice.

This product has been designed and qualified for the industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 3/01

10 www.irf.com