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PD - 94952
IRFZ46NPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
D
S
R
DS(on)
V
= 55V
DSS
= 16.5mΩ
ID = 53A
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
TO-220AB
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A
I
DM
PD @TC = 25°C Power Dissipation 107 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 180
Linear Derating Factor 0.71 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 28 A
Repetitive Avalanche Energy 11 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
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Junction-to-Case ––– 1.4
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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IRFZ46NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 16.5 mΩ VGS = 10V, ID = 28A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 19 ––– ––– S VDS = 25V, ID = 28A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 72 ID = 28A
Gate-to-Source Charge ––– ––– 11 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 26 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 28V
Rise Time ––– 76 ––– ID = 28A
Turn-Off Delay Time ––– 52 ––– RG = 12Ω
ns
Fall Time ––– 57 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1696 ––– VGS = 0V
Output Capacitance ––– 407 ––– VDS = 25V
Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 583 152 mJ I
= 28A, L = 389µH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
53
180
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V
Reverse Recovery Time ––– 67 101 ns TJ = 25°C, IF = 28A
Reverse Recovery Charge ––– 208 312 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ).
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C.
= 25°C, L = 389µH
J
= 28A. (See Figure 12).
AS
≤ 28A, di/dt ≤ 220A/µs, V
DD
≤ V
(BR)DSS
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
,
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 39A.
= 175°C.
J
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D
S
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IRFZ46NPbF
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
J
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 175 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
53A
°
T = 25 C
J
100
10
D
I , Drain-to-Source Current (A)
V = 25V
1
4 5 6 7 8 9 10 11
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
°
T = 175 C
J
DS
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRFZ46NPbF
3000
2500
2000
1500
1000
C, Capacitance (pF)
500
0
1 10 100
V
=
0V,
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
iss
C
oss
C
rss
V , Drain-to-Source Voltage (V)
DS
f = 1MHz
C
+ C
C
C
C SHORTED
+ C
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
°
T = 175 C
J
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
0.1
0.2 0.7 1.2 1.7 2.2
V ,Source-to-Drain Voltage (V)
SD
V = 0 V
GS
20
I =
28A
V , Gate-to-Source Voltage (V)
GS
D
16
12
8
4
V = 44V
DS
V = 27V
DS
V = 11V
DS
FOR TEST CIRCUIT
0
0 10 20 30 40 50 60 70
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
)
A
(
t
n
100
e
r
r
u
C
e
c
r
u
10
o
S
o
t
n
i
a
r
D
1
,
D
I
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10 100
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V
, Drain-toSource Voltage (V)
DS
13
100µsec
1msec
10msec
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRFZ46NPbF
60
LIMITED BY PACKAGE
50
40
30
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
R
V
DS
V
GS
R
G
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
D
D.U.T.
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
+
V
DD
-
thJC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
Thermal Response(Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJ C C
1
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFZ46NPbF
A
15V
DRIVER
R
G
20V
V
DS
t
L
D.U.T
I
AS
Ω
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
350
300
TOP
BOTTOM
250
+
V
DD
-
200
150
100
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature( C)
J
I
D
11A
20A
28A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
V
GS
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
12V
Fig 13b. Gate Charge Test Circuit
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
+
V
-
D
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DS
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IRFZ46NPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
R
G
V
GS
• dv/dt controlled by R
• ISD controlled by Duty Factor "D"
G
• D.U.T. - Device Under Test
+
V
DD
-
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D =
P. W .
Period
VGS=10V
[ ] ***
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
*** V
= 5.0V for Logic Level and 3V Drive Devices
GS
Fig 14. For N-channel HEXFET
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
®
power MOSFETs
V
DD
[ ]
I
[ ]
SD
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IRFZ46NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (. 113)
2.62 (. 103)
15.24 (.600)
14.84 (.584)
14.09 (. 555)
13.47 (. 530)
10.54 (.415)
10.29 (.405)
1 2 3
3.78 (.1 49)
3.54 (.1 39)
- A -
6.47 (.255)
6.10 (.240)
4
1.15 (.0 45)
MIN
4.06 ( .160)
3.55 ( .140)
4.69 (.1 85)
4.20 (.1 65)
- B -
1.32 (.052)
1.22 (.048)
HEXFET
1- GATE
2- DRAIN
3- S OURCE
4- DRAIN
LEAD ASSI GNMENTS
LEAD ASSIGNMENTS
1 - GAT E
2 - DRA IN
3 - SOU RCE
4 - DRA IN
IGBTs, C oPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
0.93 (. 037)
3X
1.40 (.055)
3X
1.15 (.045)
2.54 (.1 00)
NOTES:
1 DIMENSION ING & TOLER ANC ING PER AN SI Y14.5M, 19 82. 3 OUTL INE CO NFO RMS TO JEDE C OUTLINE TO-2 20AB.
2 CONTROL LING DIMEN SION : INCH 4 HEATSINK & LEAD M EAS UREM ENT S DO NOT INCLUDE BURRS.
2X
0.69 (. 027)
0.36 (.014) M B A M
0.55 (. 022)
3X
0.46 (. 018)
2.92 (. 115)
2.64 (. 104)
TO-220AB Part Marking Information
EXAMPLE:
T HIS IS AN IRF 1010
LOT CODE 1789
ASS EMBL E D ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NATIONAL
RE CTIF IER
LOGO
AS SE MB LY
LOT CODE
Data and specifications subject to change without notice.
This product has been designed and qualified for the automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
PART NU MBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/04
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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