Datasheet IRFZ44VS, IRFZ44VL Datasheet (International Rectifier)

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications

G

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

PD - 94050A

IRFZ44VS

IRFZ44VL

HEXFET® Power MOSFET

D

S

R

DS(on)

V

= 60V

DSS

= 16.5mΩ

= 55A

I

D

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ44VL) is available for low-profile applications.

D2Pak

IRFZ44VS

TO-262

IRFZ44VL

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 39 A I

DM

PD @TC = 25°C Power Dissipation 115 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  4.5 V/ns T

J

T

STG

Pulsed Drain Current  220

Linear Derating Factor 0.77 W/°C Gate-to-Source Voltage ± 20 V Single Pulse Avalanche Energy 115 mJ Avalanche Current 55 A Repetitive Avalanche Energy 11 mJ

Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case ––– 1.3 °C/W Junction-to-Ambient ––– 40

°C

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01/04/02

IRFZ44VS/IRFZ44VL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 60 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 16.5 mΩ VGS = 10V, ID = 31A  Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 24 ––– ––– SVDS = 25V, ID = 31A

Drain-to-Source Leakage Current

––– ––– 25 ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 100 V Gate-to-Source Reverse Leakage ––– ––– -100

µA

nA

V

= 60V, VGS = 0V

DS

= 20V

GS

VGS = -20V Total Gate Charge ––– ––– 67 ID = 51A Gate-to-Source Charge ––– ––– 18 nC VDS = 48V Gate-to-Drain ("Miller") Charge ––– ––– 25 VGS = 10V, See Fig. 6 and 13  Turn-On Delay Time ––– 13 ––– VDD = 30V Rise Time ––– 97 ––– ID = 51A Turn-Off Delay Time ––– 40 ––– RG = 9.1Ω

ns

Fall Time ––– 57 ––– RD = 0.6Ω, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact Input Capacitance ––– 1812 ––– VGS = 0V Output Capacitance ––– 393 ––– VDS = 25V Reverse Transfer Capacitance ––– 103 ––– pF ƒ = 1.0MHz, See Fig. 5

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

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Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode)

––– –––

55

220

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 51A, VGS = 0V  Reverse Recovery Time ––– 70 105 ns TJ = 25°C, IF = 51A Reverse Recovery Charge ––– 146 219 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 I

≤ 51A, di/dt ≤ 227A/µs, V

SD

DD

≤ V

(BR)DSS

,

TJ ≤ 175°C

= 25°C, L = 89µH

J

= 51A. (See Figure 12)

AS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

D

S

IRFZ44VS/IRFZ44VL

)

1000

100

10

1

D

I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

1000

VGS

TOP

15V 10V

8.0V

7.0V

6.0V

5.5V



5.0V

BOTTOM

4.5V

20µs PULSE WIDTH



T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V 10V

8.0V

7.0V

6.0V

5.5V



5.0V

BOTTOM

4.5V

20µs PULSE WIDTH



T = 175 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

3.0

55A

I =



D

°

T = 25 C



J

100

10

D

I , Drain-to-Source Current (A)

T = 175 C



1

4 5 6 7 8 9 10 11 12

V , Gate-to-Source Voltage (V)

GS

°

J

V = 25V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.5

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature( C

J

V =



Fig 4. Normalized On-Resistance

GS

°

10V

vs. Temperature

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IRFZ44VS/IRFZ44VL

4000

3000

2000

C, Capacitance(pF)

1000

0

1 10 100

V

= 0V, f = 1 MHZ

GS

Cis = C C C

VDS, Drain-to-Source Voltage (V)

rss oss

gs

= C = C

+ Cgd, C gd

+ C

ds

Ciss

Coss Crss

ds

gd

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

1000

°

J

100

T = 175 C



SHORTED

20

I =

51A

D



16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 20 40 60 80 100

Q , Total Gate Charge (nC)

G

V = 48V

DS

V = 30V

DS



V = 12V

DS

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

100

OPERATION IN THIS AREA LIMITED



BY R

DS(on)

10us



°

T = 25 C



10

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.7 1.2 1.7 2.2

V ,Source-to-Drain Voltage (V)

SD

Fig 7. Typical Source-Drain Diode

Forward Voltage

J

V = 0 V



GS

100us



10

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 175 C



Single Pulse

1

1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS



1ms

10ms



Fig 8. Maximum Safe Operating Area

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60

50

40

30

20

D

I , Drain Current (A)

10

0

25 50 75 100 125 150 175

T , Case Temperature( C)

C

°

IRFZ44VS/IRFZ44VL

R

D.U.T.

D

t

d(off)tf

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

10% V

V

GS

t

d(on)tr

Fig 9. Maximum Drain Current vs.

Fig 10b. Switching Time Waveforms

Case Temperature

10

thJC

1

D = 0.50

0.20

0.10

0.05

0.1

0.02

Thermal Response(Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

SINGLE PULSE



(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

P

DM

t



1 2

1

t

2

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IRFZ44VS/IRFZ44VL

A

15V

DRIVER

R

V

G

20V

DS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

250

TOP

200

+

V

DD

-

150

100

50

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature( C)

J



BOTTOM

I

D 21A 36A 51A

°

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

12V

.2µF

.3µF

10 V

Q

GS

V

G

Fig 13a. Basic Gate Charge Waveform

Q

GD

Charge

V

GS

3mA

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

6 www.irf.com

D.U.T.

I

G

I

D

+

V

DS

-

IRFZ44VS/IRFZ44VL

Peak Diode Recovery dv/dt Test Circuit

+





D.U.T

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance Current Transformer

-

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period



P.W.

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFETS

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IRFZ44VS/IRFZ44VL

D2Pak Package Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

1.40 (.055) MAX .

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTES: 1 D IME NSIO N S AFTER SOL D ER DIP . 2 DIMENSIONING & TO LER AN C ING PE R A N SI Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

2

Pak Part Marking Information

D

10.29 (.405)

- A 2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.25 (.010) M B A M

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNM ENTS 1 - G AT E 2 - D RAIN 3 - S OURCE

10.16 (.400) REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350) REF.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082) 2X

2.54 (.100) 2X

THIS IS AN IRF530S WITH LOT C ODE 8024

ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L"

INTERNATIONAL

RECTIFIER

LOGO

F530S

PART NUMBER

DATE CODE

AS S EMBL Y LOT CODE

YEAR 0 = 2000 WEEK 02 LIN E L

8 www.irf.com

TO-262 Package Outline

EXA MPLE: THIS IS AN IRL3103L

LOT C ODE 1789

AS S EMBL Y

PA RT NUM BER

DATE CO DE

WEEK 19 LINE C

LOT CODE

YEAR 7 = 1997

A SSEMBLED ON W W 19, 1997 IN THE ASSEMBLY LINE "C"

LOGO

RECTIFIER

INTERNATIONAL

Dimensions are shown in millimeters (inches)

IRFZ44VS/IRFZ44VL

TO-262 Par t Mar king Information

www.irf.com 9

IRFZ44VS/IRFZ44VL

)

D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

4.10 (.161)

3.90 (.153)

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429

10.70 (.421

1.60 (.063)

1.50 (.059)

11.60 (.457

11.40 (.449

16.10 (.634

15.90 (.626

1.60 (.06 3

1.50 (.05 9

1.75 (.069

1.25 (.049

15.42 (.609

15.22 (.601

0.368 (.0145

0.342 (.0135

24.30 (.957

23.90 (.941

4.72 (.136

4.52 (.178

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

NOTES :

1. COMFO R M S T O EIA-418.

2. CONTROLLING DIMENSION: MILLIM ETER.

3. DIMENSION MEASURED @ HU B.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

27.40 (1.079)

23.90 (.941)

4

60.00 (2.362 MIN .

30.40 (1.197)

26.40 (1.039

24.40 (.961

3

MA X .

4

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.01/02

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