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PD - 94823
Document Number: 91292
www.vishay.com
1
IRFZ44RPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Drop in Replacement of the IRFZ44
for Linear/Audio Applications
l Lead-Free
G
HEXFET® Power MOSFET
D
S
R
DS(on)
V
DSS
= 50*A
I
D
= 60V
= 0.028Ω
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low
TO-220AB
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 50*
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 36 A
I
DM
PD @TC = 25°C Power Dissipation 150 W
V
GS
E
AS
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T
J
T
STG
Pulsed Drain Current 200
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 100 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1 N•m)
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.0
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Typ. Max. Units
11/10/03
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IRFZ44RPbF
Document Number: 91292
www.vishay.com
2
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.060 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.028 Ω VGS = 10V, ID = 31A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 15 ––– ––– S VDS = 25V, ID = 31A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 67 ID = 51A
Gate-to-Source Charge ––– ––– 18 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 25 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 30V
Rise Time ––– 110 ––– ID = 51A
Turn-Off Delay Time ––– 45 ––– RG = 9.1Ω
ns
Fall Time ––– 92 ––– RD = 0.55Ω, See Fig. 10
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
4.5
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1900 ––– VGS = 0V
Output Capacitance ––– 920 ––– VDS = 25V
Reverse Transfer Capacitance ––– 170 ––– pF ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
* Current limited by the package, (Die Current = 51A)
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 51A, VGS = 0V
Reverse Recovery Time ––– 120 180 ns TJ = 25°C, IF = 51A
Reverse Recovery Charge ––– 0.53 0.80 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 51A, di/dt ≤ 250A/µs, V
SD
TJ ≤ 175°C
= 25V, Starting TJ = 25°C, L = 44µH
= 51A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
50*
200
showing the
A
p-n junction diode.
≤ V
DD
(BR)DSS
D
G
S
,
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IRFZ44RPbF
Document Number: 91292
www.vishay.com
3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
2.5
2.0
1.5
1.0
0.5
0.0
51A
I =
D
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
10V
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IRFZ44RPbF
Document Number: 91292
www.vishay.com
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Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Fig 7. Typical Source-Drain Diode
Forward Voltage
Forward Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
100
10
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 175 C
Single Pulse
1
1 10 100 1000
°
J
V , Drain-to-Source Voltage (V)
DS
BY R
DS(on)
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Page 5
60
Document Number: 91292
www.vishay.com
5
LIMITED BY PACKAGE
50
40
30
20
D
I , Drain Current (A)
10
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
IRFZ44RPbF
R
D.U.T.
D.U.T.
D
t
t
d(off)tf
d(off)tf
+
V
-
V
V
DS
DS
V
V
GS
GS
R
R
G
G
10V
10V
Pulse Width ≤ 1 µs
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
Fig 10a. Switching Time Test Circuit
V
V
DS
DS
90%
90%
10%
10%
V
V
GS
GS
t
t
d(on)tr
d(on)tr
DD
Fig 9. Maximum Drain Current Vs.
Fig 9. Maximum Drain Current Vs.
Case Temperature
Case Temperature
10
Fig 10b. Switching Time Waveforms
Fig 10b. Switching Time Waveforms
thJC
1
D = 0.50
0.20
0.10
0.1
0.05
Thermal Response(Z )
0.01
0.02
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Note s:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
1 2
P
DM
t
1
t
2
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IRFZ44RPbF
A
Document Number: 91292
www.vishay.com
6
15V
DRIVER
R
G
20V
V
DS
t
L
D.U.T
I
AS
Ω
0.01
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
250
TOP
200
+
V
DD
-
150
100
50
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150 175
Starting T , Junction Temperature ( C)
J
BOTTOM
I
D
21A
36A
51A
°
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
Q
G
10 V
Q
GS
V
G
Q
GD
Charge
Fig 13a. Basic Gate Charge Waveform
50KΩ
12V
.2µF
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
I
D
Fig 13b. Gate Charge Test Circuit
+
V
DS
-
Page 7
IRFZ44RPbF
Document Number: 91292
www.vishay.com
7
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P. W .
Period
+
+
V
DD
-
VGS=10V
*
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISDWaveform
Body Diode Forward
Current
D.U.T. VDSWaveform
Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5%
* V
= 5V for Logic Level Devices
GS
Diode Recovery
dv/dt
Fig 14. For N-Channel HEXFETS
di/dt
V
DD
I
SD
Page 8
IRFZ44RPbF
Document Number: 91292
www.vishay.com
8
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (. 113)
2.62 (. 103)
15.24 (.600)
14.84 (.584)
14.09 (. 555)
13.47 (. 530)
10.54 (.415)
10.29 (.405)
1 2 3
4
6.47 (.255)
6.10 (.240)
1.15 (.0 45)
MIN
4.06 ( .160)
3.55 ( .140)
3.78 (.1 49)
3.54 (.1 39)
- A -
4.69 (.1 85)
4.20 (.1 65)
- B -
1.32 (.052)
1.22 (.048)
LEAD ASSI GNMENTS
LEAD ASSIGNMENTS
HEXFET
1 - GAT E
2 - DRA IN
1- GATE
3 - SOU RCE
2- DRAIN
3- S OURCE
4 - DRA IN
4- DRAIN
IGBTs, C oPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
0.93 (. 037)
3X
1.40 (.055)
3X
1.15 (.045)
2.54 (.1 00)
NOTES:
1 DIMENSION ING & TOLER ANC ING PER AN SI Y14.5M, 19 82. 3 OUTL INE CO NFO RMS TO JEDE C OUTLINE TO-2 20AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
2X
0.69 (. 027)
0.36 (.014) M B A M
0.55 (. 022)
3X
0.46 (. 018)
2.92 (. 115)
2.64 (. 104)
TO-220AB Part Marking Information
EXAMPLE:
T HIS IS AN IRF 1010
LOT CODE 1789
ASS EMBL E D ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NATIONAL
RE CT IF IER
LOGO
AS SE MB LY
LOT CODE
Data and specifications subject to change without notice.
PART NU MBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
11/03
Page 9
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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