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PD - 95124
IRFZ44NSPbF
l Advanced Process Technology
l Surface Mount (IRFZ44NS)
l Low-profile through-hole (IRFZ44NL)
l 175°C Operating Temperature
l Fast Switching
IRFZ44NLPbF
HEXFET® Power MOSFET
D
V
DSS
= 55V
l Fully Avalanche Rated
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for lowprofile applications.
2
Pak is suitable
G
S
R
DS(on)
2
D Pak
= 0.0175Ω
ID = 49A
TO-262
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 94 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 160
Linear Derating Factor 0.63 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 25 A
Repetitive Avalanche Energy 9.4 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
www.irf.com 1
Junction-to-Case ––– 1.5
Junction-to-Ambient ––– 40 °C/W
3/18/04
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IRFZ44NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ VGS = 10V, ID = 25A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 19 ––– ––– S VDS = 25V, ID = 25A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 63 ID = 25A
Gate-to-Source Charge ––– ––– 14 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 12 ––– VDD = 28V
Rise Time ––– 60 ––– ID = 25A
Turn-Off Delay Time ––– 44 ––– RG = 12Ω
ns
Fall Time ––– 45 ––– VGS = 10V, See Fig. 10
Internal Source Inductance ––– 7.5 ––– nH Between lead,
and center of die contact
Input Capacitance ––– 1470 ––– VGS = 0V
Output Capacitance ––– 360 ––– VDS = 25V
Reverse Transfer Capacitance ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 530 150 mJ I
= 25A, L = 0.47mH
AS
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
49
160
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 25A
Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
= 25°C, L = 0.48mH
J
= 25A. (See Figure 12)
AS
I
≤ 25A, di/dt ≤ 230A/µs, V
SD
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
= 175°C .
J
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2 www.irf.com
D
S
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IRFZ44NS/LPbF
A
A
A
A
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
100
10
D
I , Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
T = 25°C
TJ = 25°C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 1. Typical Output Characteristics
1000
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
TJ = 175°C
T = 175°C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
C
Fig 2. Typical Output Characteristics
2.5
I = 41A
D
2.0
T = 25°C
100
10
D
I , Drain-to-Source Current (A)
1
45678 910
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
J
T = 175°C
J
V = 25V
DS
20µs PULSE WIDTH
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperat ure ( °C)
J
Fig 4. Normalized On-Resistance
V = 10V
GS
Vs. Temperature
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IRFZ44NS/LPbF
A
A
A
A
2500
2000
1500
1000
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C, Capacitance (pF)
C
500
0
rss
1 10 100
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
20
I = 25A
D
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
V = 44V
DS
V = 28V
DS
FOR TEST CIRCUIT
0
0 10203040506070
Q , Total Gate Charge (nC)
G
SEE FIGURE 13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
T = 175°C
J
T = 25 °C
10
SD
I , Reverse Drain Current (A)
1
0.5 1.0 1.5 2.0 2.5 3.0
J
V = 0V
V , Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
GS
100
10
D
I , Drain Current (A)
T = 25°C
C
T = 175°C
J
Single Pulse
1
1 10 100
V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
10µs
100µs
1ms
10ms
Forward Voltage
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50
40
30
20
D
I , Drain Current (A)
10
IRFZ44NS/LPbF
R
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
D
D.U.T.
+
V
DD
-
0
25 50 75 100 125 150 175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
10%
V
GS
t
d(on)tr
t
d(off)tf
Fig 10b. Switching Time Waveforms
Case Temperature
10
thJC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
(THERMAL RESPONSE)
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFZ44NS/LPbF
A
D.U.T.
I
AS
L
0.01Ω
+
V
DD
-
R
10 V
V
DS
G
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
V
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
500
400
300
200
100
AS
V = 25V
E , Single Pulse Avalanche Energy (mJ)
DD
0
25 50 75 100 125 150 175
Starting T , Junction Temperature (°C)
J
I
TOP 10A
18A
BOTTOM 25A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
12V
.2µF
.3µF
10 V
Q
GS
V
G
Fig 13a. Basic Gate Charge Waveform
Q
GD
Charge
V
GS
3mA
I
G
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
D.U.T.
I
D
6 www.irf.com
+
V
DS
-
Page 7
IRFZ44NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
P. W .
Period
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFETS
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IRFZ44NS/LPbF
2
D
Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530 S WIT H
LOT CODE 8024
ASS EMB LE D ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
N ote: "P" in as s embly line
po s itio n in dicate s "L ead-F ree"
INT E RN AT IONAL
RECTIFIER
LOGO
AS SE MB LY
LOT CODE
F530S
PAR T NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
IN T E R NAT ION AL
RECTIFIER
LOGO
AS S EM B LY
LOT CODE
F 530S
8 www.irf.com
PART NUMB ER
DATE CODE
P = DESIGNATE S LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Page 9
TO-262 Package Outline
IRFZ44NS/LPbF
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
TH IS IS AN IRL 3103L
E X AMPL E :
LOT CODE 1789
ASS EMBLE D ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
Note: "P" in ass embly line
pos iti on indicates "L ead-F ree"
INTE RNAT IONAL
RECT IFIER
LOGO
AS S E MB L Y
LOT CODE
PART NUMBE R
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INTE RNAT IONAL
RECT IFIER
LOGO
ASSEMBLY
LOT CODE
www.irf.com 9
PART NUMBER
DAT E CODE
P = DES IGNATES LEAD-FRE E
PRODUCT (OPT IONAL)
YEAR 7 = 1997
WE EK 19
A = ASSEMBLY SITE CODE
Page 10
IRFZ44NS/LPbF
D2Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
TRR
FEED DI RECTION
TRL
FEED DI RECTION
1.85 (.073)
1.65 (.065)
10.90 (.429)
10.70 (.421)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
16.10 (.634)
15.90 (.626)
1.60 (.063)
1.50 (.059)
1.75 (.069)
1.25 (.049)
15.42 (.609)
15.22 (.601)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
13.50 ( .532)
12.80 ( .504)
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
27.40 ( 1.079)
23.90 ( .941)
4
26.40 ( 1.039)
24.40 ( .961)
3
60.00 (2.362)
MIN.
30.40 ( 1.197)
MAX.
4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/04
10 www.irf.com
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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