Datasheet IRFZ44NPBF Specification

PD - 94053

IRFZ44N

HEXFET® Power MOSFET

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

G

D

R

DS(on)

V

= 55V

DSS

= 17.5mΩ

ID = 49A

S

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute

TO-220AB

to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A I

DM

PD @TC = 25°C Power Dissipation 94 W

V

GS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns T

J

T

STG

Pulsed Drain Current  160

Linear Derating Factor 0.63 W/°C Gate-to-Source Voltage ± 20 V Avalanche Current 25 A Repetitive Avalanche Energy 9.4 mJ

Operating Junction and -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

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Junction-to-Case ––– 1.5 Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W Junction-to-Ambient ––– 62

01/03/01

IRFZ44N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

E

AS

Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.058 –– – V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ VGS = 10V, ID = 25A  Gate Threshold Voltage 2.0 –– – 4.0 V VDS = VGS, ID = 250µA Forward Transconductance 19 –– – ––– S VDS = 25V, ID = 25A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 55V, VGS = 0V

µA

nA

VGS = -20V Total Gate Charge ––– ––– 63 ID = 25A Gate-to-Source Charge ––– ––– 14 nC VDS = 44V Gate-to-Drain ("Miller") Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13 Turn-On Delay Time ––– 12 ––– VDD = 28V Rise Time ––– 60 ––– ID = 25A Turn-Off Delay Time ––– 44 ––– RG = 12Ω

ns

Fall Time ––– 45 ––– VGS = 10V, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact Input Capacitance ––– 1470 ––– VGS = 0V Output Capacitance ––– 360 ––– VDS = 25V Reverse Transfer Capacitance ––– 88 ––– pF ƒ = 1.0MHz, See Fig. 5 Single Pulse Avalanche Energy ––– 530 150 mJ I

= 25A, L = 0.47mH

AS

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol (Body Diode) Pulsed Source Current integral reverse (Body Diode)

––– –––

49

160

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V  Reverse Recovery Time ––– 63 95 ns TJ = 25°C, IF = 25A Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 I

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

 Starting T

RG = 25Ω, I

= 25°C, L = 0.48mH

J

= 25A. (See Figure 12)

AS

≤ 25A, di/dt ≤ 230A/µs, V

SD

TJ ≤ 175°C

 Pulse width ≤ 400µs; duty cycle ≤ 2%.  This is a typical value at device destruction and represents

operation outside rated limits.

 This is a calculated value limited to T

DD

≤ V

(BR)DSS

= 175°C .

J

,

2 www.irf.com

D

S

IRFZ44N

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

1000

VGS

TOP

15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

20µs PULSE WIDTH T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V 10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

20µs PULSE WIDTH T = 175 C

V , Drain-to-Source Voltage (V)

DS

°

J

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.5

I =

D

49A

°

T = 25 C

J

100

10

D

I , Drain-to-Source Current (A)

V = 25V

DS

1

4 5 6 7 8 9 10 11

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

°

T = 175 C

J

Fig 3. Typical Transfer Characteristics

2.0

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

10V

GS

°

Vs. Temperature

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IRFZ44N

2500

2000

1500

1000

C, Capacitance (pF)

500

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C + C

C

iss

oss

rss

C SHORTED C C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I =

25A

D

V = 44V

DS

V = 27V

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 10 20 30 40 50 60 70

Q , Total Gate Charge (nC)

G

DS

V = 11V

DS

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

100

10

1

SD

I , Reverse Drain Current (A)

0.1

0.0 0.6 1.2 1.8 2.4

°

T = 175 C

J

°

T = 25 C

J

V ,Source-to-Drain Voltage (V)

SD

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

100

10

1

, Drain-to-Source Current (A)

D

I

Tc = 25°C Tj = 175°C Single Pulse

0.1 1 10 100

V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

100µsec

1msec

10msec

Forward Voltage

4 www.irf.com

IRFZ44N

50

40

30

20

D

I , Drain Current (A)

10

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

R

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

D

D.U.T.

Fig 10a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

thJC

1

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Thermal Response (Z )

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

0.01

0.00001 0.0001 0.001 0.01 0.1

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

P

DM

t

1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFZ44N

A

15V

DRIVER

R

V

G

20V

DS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

300

TOP

240

+

V

DD

-

180

120

60

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

BOTTOM

I

°

D 10A 18A 25A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

V

GS

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

12V

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

D

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+

V

DS

-

IRFZ44N

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance Current Transformer

-

+



-



-

+



R

G

V

GS

• dv/dt controlled by R

• ISD controlled by Duty Factor "D"

G

• D.U.T. - Device Under Test

+

V

DD

-

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

Period

VGS=10V

[ ] ***

D.U.T. ISDWaveform

Reverse Recovery Current

Re-Applied Voltage

D.U.T. VDSWaveform

Inductor Curent

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

Fig 14. For N-channel HEXFET

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

®

power MOSFETs

V

DD

[ ]

I

[ ]

SD

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IRFZ44N

A

Package Outline

TO-220AB

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

10.29 (.405)

1 2 3

6.47 (.255)

6.10 (.240)

4

1.15 (.045) M IN

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

LEAD ASSIGNMENTS 1 - GAT E 2 - DRA IN 3 - SOU R C E 4 - DRA IN

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES: 1 DIM E N S IO N IN G & T O L E R A N C I N G P E R A N S I Y 1 4 . 5 M , 1 9 8 2 . 3 OU T L IN E C O N F O R M S T O J E D E C O U T L IN E T O - 2 2 0 A B . 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IRF1010 W IT H A SSEMBLY LOT CODE 9 B1M

This product has been designed and qualified for the Automotive [Q101] market.

0.93 (.037)

3X

0.69 (.027)

0.36 (.01 4) M B A M

INTERN A TION A L RE CTIFIER L OGO

ASSEMBLY LOT C ODE

Data and specifications subject to change without notice.

0.55 (.022)

3X

0.46 (.018)

2.92 (.115)

2.64 (.104)

PART NUMB ER

I RF1010

9246

9B 1 M

DATE CODE (YYWW) YY = YEAR WW = WEEK

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.01/01

8 www.irf.com

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/